JPS607769A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPS607769A JPS607769A JP58116734A JP11673483A JPS607769A JP S607769 A JPS607769 A JP S607769A JP 58116734 A JP58116734 A JP 58116734A JP 11673483 A JP11673483 A JP 11673483A JP S607769 A JPS607769 A JP S607769A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoconductive
- substrate
- protective film
- cdse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
近年ファクシミリ送信部の小型化のために、密着型のイ
メージセンサの開発が行なわれている。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] In recent years, contact type image sensors have been developed in order to downsize facsimile transmitters.
密着型のイメージセンサは、イメージセンサの設置位置
を原稿面からｉ７十ｍｍまで短かくできる。本発明は、
このような用途に適するイメージセンサに関する。With the contact type image sensor, the installation position of the image sensor can be shortened to 70 mm from the document surface. The present invention
The present invention relates to an image sensor suitable for such uses.
第１図はイメージセンサを拡大して示すもので、（イ）
は平面図、（ロ）は（イ）図のローロ断面図である。１
は基板であり、その上に画素を得るための光導電１！ｉ
！２・・・が１列に形成されており、各光導電膜２・・
・の両端には、出力取り出し用のコモン電極３と個別電
極４・・・が形成されている。Figure 1 shows an enlarged view of the image sensor, (a)
is a plan view, and (b) is a cross-sectional view of the roller shown in (a). 1
is the substrate, on which the photoconductor 1! is used to obtain the pixels. i
! 2... are formed in one row, and each photoconductive film 2...
A common electrode 3 and individual electrodes 4 for taking out the output are formed at both ends of the electrode.
光導電膜２・・・は、１ｍｍに８個程度形成され、この
ような微小の光導電膜２・・・が微小間隔で、原稿面の
読み取り領域の長さにわたってライン状に形成される。Approximately eight photoconductive films 2 are formed in 1 mm, and such minute photoconductive films 2 are formed in a line shape over the length of the reading area on the document surface at minute intervals.
そして原稿面から反射して来た光がこれらの光導電膜２
・・・に当たると、光導電膜２・・・の明抵抗が低下し
て、電極３．４間に大きな電流が検出される。各光導電
膜２・・・ごとの検出信号をファクシミリ受信部に送信
して記録再現する。The light reflected from the surface of the original is transferred to these photoconductive films 2.
. . , the bright resistance of the photoconductive film 2 . . . decreases, and a large current is detected between the electrodes 3 and 4. The detection signal for each photoconductive film 2 is transmitted to the facsimile receiving section and recorded and reproduced.
ところで光導電膜２・・・を作成するには、ＣｄＳｅあ
るいはＣｄＳのようなｎ−ｖｈ化合物を基板に蒸着して
光導電膜を形成し、光導電効果を得るための活性化熱処
理を炉内で行なった後、パターニングして第１図のよう
に島状に分離した多数の光導電膜２・・・を形成する。By the way, in order to create the photoconductive film 2..., a photoconductive film is formed by depositing an n-vh compound such as CdSe or CdS on a substrate, and an activation heat treatment is performed in a furnace to obtain a photoconductive effect. After that, patterning is performed to form a large number of photoconductive films 2 separated into island shapes as shown in FIG.
そしてこれらの光導電膜２・・・の両端に電極膜３．４
を蒸着し形成する。Electrode films 3.4 are placed on both ends of these photoconductive films 2...
Formed by vapor deposition.
このようにＣｄＳやＣｄＳｅなどの■〜■化合物半導体
膜が用いられるが、基板に蒸着後に、光導電効果を得る
ための活性化熱処理をして多結晶を成長させるので、光
導電膜２は６００℃程度の高温雰囲気中にさらされる。In this way, compound semiconductor films such as CdS and CdSe are used, but after being vapor deposited on the substrate, an activation heat treatment is performed to grow polycrystals in order to obtain a photoconductive effect, so the photoconductive film 2 is Exposure to high temperature atmosphere around ℃.
そのために高温多結晶の成長と同時に蒸着膜の表面から
蒸発分解が行なわれる。ところが蒸着膜は、ＣｄとＳ、
ＣｄとＳｅというように蒸気圧の異なる物質で構成され
ているために、蒸発によって組成が変化してしまう。Therefore, evaporative decomposition occurs from the surface of the deposited film simultaneously with the growth of high-temperature polycrystals. However, the vapor deposited film contains Cd and S,
Since it is composed of substances such as Cd and Se, which have different vapor pressures, the composition changes due to evaporation.
本発明の目的は、従来のイメージセンサにおけるこのよ
うな問題を解消し、活性化熱処理の際に光導電膜を構成
するｎ−ｖｒ化合物の蒸着膜が蒸発分解するのを防止す
ることにある。An object of the present invention is to eliminate such problems in conventional image sensors and to prevent the vapor-deposited film of the n-vr compound constituting the photoconductive film from being evaporated and decomposed during activation heat treatment.
〔発明の構成〕
この目的を達成するために講じた本発明による技術的手
段は、絶縁性の基板にｎ−ｖｉ化合物であるＣｄＳｅ、
ＣｄＳ等で光導電膜を形成して、その上に高融点絶縁
材料で保護膜を形成し、且つ該保護膜および基板の少な
くとも片方を透明体で構成したことを特徴とする。[Structure of the Invention] The technical means according to the present invention taken to achieve this object is to apply CdSe, which is an n-vi compound, to an insulating substrate.
The present invention is characterized in that a photoconductive film is formed using CdS or the like, a protective film is formed thereon using a high melting point insulating material, and at least one of the protective film and the substrate is made of a transparent material.
次に本発明によるイメージセンサが実際上どのように具
体化されるかを実施例で説明する。第２図は本発明によ
るイメージセンサとその製造方法を示す断面図である。Next, examples will be used to explain how the image sensor according to the present invention is actually implemented. FIG. 2 is a sectional view showing an image sensor and a manufacturing method thereof according to the present invention.
（イ）に示すように基板１に、コモン電極３と個別電極
４をＣｒやＭなどの蒸着やスパックで形成し、その上に
（ロ）のようにＣｄＳｅなどのＩＩ−Ｖｌ化合物を蒸着
して光導電膜２を形成する。そして最後に（ハ）のよう
に、光導電膜２の上にガラスやＳｉＯｘを蒸着して保護
膜５を形成する。As shown in (a), a common electrode 3 and individual electrodes 4 are formed on a substrate 1 by vapor deposition or spacing of Cr, M, etc., and on top of that, as shown in (b), a II-Vl compound such as CdSe is vapor-deposited. A photoconductive film 2 is formed. Finally, as shown in (c), glass or SiOx is deposited on the photoconductive film 2 to form a protective film 5.
こうして保ｉＩ膜５を設けた状態の基板を、炉に入れて
６００℃前後で加熱し、活性化熱処理を行なってＣｄＳ
、ｅの多結晶を成長させる。このとき光導電膜２は、従
来と違って保護膜５で覆われているので、高温に加熱さ
れても、蒸発分解は抑制される。The substrate with the iI-retaining film 5 provided thereon is placed in a furnace and heated to around 600°C to perform activation heat treatment.
, e to grow a polycrystal. At this time, the photoconductive film 2 is covered with the protective film 5 unlike the conventional method, so that even if it is heated to a high temperature, evaporation and decomposition are suppressed.
したがって、活性化熱処理のために光導電膜の組成が変
化して、所定の光導電効果が得られなくなるような欠陥
が防止される。Therefore, defects such as changes in the composition of the photoconductive film due to activation heat treatment and failure to obtain a predetermined photoconductive effect are prevented.
基板１は、透明のガラスで構成したり、不透明のセラミ
ックなどで構成するが、基板１を不透明体で構成する場
合は、保護膜５を透明体で構成し、保護膜５側から原稿
の読み取りを行なう。基板１を透明体で構成する場合は
、保護膜５は不透明体で構成してもよい。そしてこの場
合は、透明の基板側から読み取りを行なう。基板１も保
護膜５も共に透明体で構成した場合は、基板１側または
保護膜５例のどちらから読み取ってもよい。The substrate 1 is made of transparent glass or opaque ceramic, but when the substrate 1 is made of an opaque material, the protective film 5 is made of a transparent material, and the document can be read from the protective film 5 side. Do the following. When the substrate 1 is made of a transparent material, the protective film 5 may be made of an opaque material. In this case, reading is performed from the transparent substrate side. If both the substrate 1 and the protective film 5 are made of transparent materials, reading may be performed from either the substrate 1 side or the protective film 5.
第２図の例は、電極３．４を形成した後に光導電膜２を
形成しているが、第１図の場合と同様に光導電膜２を形
成した後に、その上から電極３．４を形成してもよい。In the example of FIG. 2, the photoconductive film 2 is formed after forming the electrode 3.4, but after forming the photoconductive film 2 as in the case of FIG. may be formed.
また保護膜５をつけた状態で加熱処理するので、保護膜
５と基板１との熱膨張率が近いことが必要である。基板
１と熱膨張率が異なる材料を保護膜に使用する場合は、
まず第３図（イ）のよ・うに、基板１上に保護膜５と同
じ材料またば保護膜５と熱膨張率が等しい材料でスペー
サ６を形成する。Further, since the heat treatment is performed with the protective film 5 attached, it is necessary that the thermal expansion coefficients of the protective film 5 and the substrate 1 be similar. When using a material with a different coefficient of thermal expansion than the substrate 1 for the protective film,
First, as shown in FIG. 3(A), a spacer 6 is formed on the substrate 1 using the same material as the protective film 5 or a material having the same coefficient of thermal expansion as the protective film 5.
このスペーサ６は、基板１の全面に設ける必要ばなく、
少な（とも保護膜５を形成する領域に設ければ足りる。This spacer 6 does not need to be provided on the entire surface of the substrate 1;
It is sufficient to provide a small number of layers in the area where the protective film 5 is to be formed.
このスペーサ６の上にＣｄＳｅなどで光導電膜２を形成
し、その上に蒸発分解防止用の保護膜５を設ける。A photoconductive film 2 is formed of CdSe or the like on this spacer 6, and a protective film 5 for preventing evaporation and decomposition is provided thereon.
こうして保護膜５を被せた状態で、活性化熱処理を行な
い光導電膜２の多結晶化を行なう。次に（ロ）のように
、保護膜５を選択的に工、チングして、電極３．４を形
成する領域を除去する。そしてこの保護膜材料を除去し
た領域に、（ハ）のように電極導体を蒸着して電極３．
４を形成する。With the protective film 5 covered in this manner, activation heat treatment is performed to polycrystallize the photoconductive film 2. Next, as shown in (b), the protective film 5 is selectively etched to remove the region where the electrode 3.4 is to be formed. Then, in the area from which the protective film material was removed, an electrode conductor is deposited as shown in (c) to form the electrode 3.
form 4.
このようにスペーサ６を設けることにより、光導電膜２
や保護膜５と基板１との熱膨張率が異なる場合でも、光
導電膜２や保護膜５にクランクが発生したりする恐れは
ない。なお保護膜５として不透明体を使用し、基板１側
から読み取りを行なう場合は、スペーサ６も基板１と同
様に透明体で構成する。By providing the spacer 6 in this way, the photoconductive film 2
Even if the thermal expansion coefficients of the protective film 5 and the substrate 1 are different, there is no risk of cranking occurring in the photoconductive film 2 or the protective film 5. Note that when an opaque material is used as the protective film 5 and reading is performed from the substrate 1 side, the spacer 6 is also made of a transparent material like the substrate 1.
なお第３図（ロ）の保護膜材料のエツチングは、活性化
熱処理の前に行なってもよい。また保護膜５の蒸着を、
マスクを通して選択的に行なうことにより、電極形成部
以外のみに蒸着されるようにすることもできる。Note that the etching of the protective film material shown in FIG. 3(b) may be performed before the activation heat treatment. In addition, the deposition of the protective film 5,
By selectively performing the deposition through a mask, it is also possible to deposit only on areas other than the electrode formation area.
以上のように本発明によれば、絶縁性の基板にＩＪ −
Ｖｌ化合物であるＣｄＳｅ、 ＣｄＳ等で光導電膜を形
成して、その上に高融点絶縁材料で保護膜を形成してい
るので、光導電膜の活性化熱処理の際に光導電膜材料が
蒸発分解して組成が変化するのを未然に防止することが
できる。このように保護膜を設けるが、該保護膜および
基板の少な（とも片方を透明体で構成している。保護膜
として不透明体を使用する場合は、基板側から読み取り
を行なうことができ、透明体を使用する場合は、保護膜
側から読み取ることができる。そのため基板や保護膜の
利料選択が容易になる。As described above, according to the present invention, IJ −
A photoconductive film is formed using Vl compounds such as CdSe and CdS, and a protective film is formed on top of it using a high melting point insulating material, so the photoconductive film material evaporates during the activation heat treatment of the photoconductive film. It is possible to prevent the composition from changing due to decomposition. A protective film is provided in this way, but both the protective film and the substrate (one of which is made of a transparent material.If an opaque material is used as the protective film, reading can be done from the substrate side, and the transparent When using a body, it can be read from the protective film side.This makes it easy to select the substrate and protective film.
第１図は密着型のイメージセンサの一般構成を示す平面
図と断面図、第２図は本発明によるイメージセンサの実
施例を示す製造工程と完成状態の断面図、第３図は本発
明の別の実施例の製造工程と完成状態を示す断面図であ
る。
図において、１は基板、２は光導電膜、３．４は電極、
５ば保護膜、６はスペーサをそれぞれ示す。
特許出願人 富士通株式会社
代理人 弁理士 青 柳 稔FIG. 1 is a plan view and a cross-sectional view showing the general structure of a contact type image sensor, FIG. 2 is a cross-sectional view showing the manufacturing process and completed state of an embodiment of the image sensor according to the present invention, and FIG. FIG. 7 is a cross-sectional view showing the manufacturing process and completed state of another example. In the figure, 1 is a substrate, 2 is a photoconductive film, 3.4 is an electrode,
5 indicates a protective film, and 6 indicates a spacer. Patent applicant Fujitsu Ltd. agent Patent attorney Minoru Aoyagi
Claims (1)
ｄＳ等で光導電膜を形成して、その上に高融点絶縁材料
で保護膜を形成し、且つ該保護膜および基板の少なくと
も片方を透明体で構成したことを特徴とするイメージセ
ンサ。CdSe, which is a II-VI compound, is placed on an insulating substrate.
An image sensor comprising a photoconductive film formed of dS or the like, a protective film formed thereon of a high melting point insulating material, and at least one of the protective film and the substrate made of a transparent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58116734A JPS607769A (en) | 1983-06-28 | 1983-06-28 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58116734A JPS607769A (en) | 1983-06-28 | 1983-06-28 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS607769A true JPS607769A (en) | 1985-01-16 |
Family
ID=14694461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58116734A Pending JPS607769A (en) | 1983-06-28 | 1983-06-28 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS607769A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6231282A (en) * | 1985-08-02 | 1987-02-10 | Fuji Photo Film Co Ltd | Electronic still camera |
| JPS6231281A (en) * | 1985-08-02 | 1987-02-10 | Fuji Photo Film Co Ltd | Electronic still camera |
-
1983
- 1983-06-28 JP JP58116734A patent/JPS607769A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6231282A (en) * | 1985-08-02 | 1987-02-10 | Fuji Photo Film Co Ltd | Electronic still camera |
| JPS6231281A (en) * | 1985-08-02 | 1987-02-10 | Fuji Photo Film Co Ltd | Electronic still camera |
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