JPS6098669A - パワ−トランジスタ - Google Patents

パワ−トランジスタ

Info

Publication number: JPS6098669A
Authority: JP; Japan
Prior art keywords: electrode; region; emitter; collector; base
Prior art date: 1983-11-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP58206178A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0348653B2 (2

Inventor

Tetsuo Asano

哲郎浅野

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Tokyo Sanyo Electric Co Ltd

Sanyo Electric Co Ltd

Sanyo Denki Co Ltd

Original Assignee

Tokyo Sanyo Electric Co Ltd

Sanyo Electric Co Ltd

Sanyo Denki Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-11-02

Filing date

1983-11-02

Publication date

1985-06-01

1983-11-02 Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd

1983-11-02 Priority to JP58206178A priority Critical patent/JPS6098669A/ja

1985-06-01 Publication of JPS6098669A publication Critical patent/JPS6098669A/ja

1991-07-25 Publication of JPH0348653B2 publication Critical patent/JPH0348653B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 7
239000004065 semiconductor Substances 0.000 claims description 6
239000010410 layer Substances 0.000 description 18
238000009413 insulation Methods 0.000 description 2
239000004642 Polyimide Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000006378 damage Effects 0.000 description 1
239000000428 dust Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000000605 extraction Methods 0.000 description 1
239000011796 hollow space material Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
229920001721 polyimide Polymers 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000002356 single layer Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

Bipolar Transistors (AREA)

JP58206178A 1983-11-02 1983-11-02 パワ−トランジスタ Granted JPS6098669A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP58206178A JPS6098669A (ja)	1983-11-02	1983-11-02	パワ−トランジスタ

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP58206178A JPS6098669A (ja)	1983-11-02	1983-11-02	パワ−トランジスタ

Publications (2)

Publication Number	Publication Date
JPS6098669A true JPS6098669A (ja)	1985-06-01
JPH0348653B2 JPH0348653B2 (2)	1991-07-25

Family

ID=16519101

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP58206178A Granted JPS6098669A (ja)	1983-11-02	1983-11-02	パワ−トランジスタ

Country Status (1)

Country	Link
JP (1)	JPS6098669A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1082422C (zh) *	1995-12-07	2002-04-10	松下电器产业株式会社	树脂封装电子制品的制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5165585A (2) *	1974-12-04	1976-06-07	Hitachi Ltd
JPS57197863A (en) *	1982-04-12	1982-12-04	Hitachi Ltd	Semiconductor integrated circuit device

1983
- 1983-11-02 JP JP58206178A patent/JPS6098669A/ja active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5165585A (2) *	1974-12-04	1976-06-07	Hitachi Ltd
JPS57197863A (en) *	1982-04-12	1982-12-04	Hitachi Ltd	Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1082422C (zh) *	1995-12-07	2002-04-10	松下电器产业株式会社	树脂封装电子制品的制造方法

Also Published As

Publication number	Publication date
JPH0348653B2 (2)	1991-07-25

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