JPS61119059A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61119059A
JPS61119059A JP24020184A JP24020184A JPS61119059A JP S61119059 A JPS61119059 A JP S61119059A JP 24020184 A JP24020184 A JP 24020184A JP 24020184 A JP24020184 A JP 24020184A JP S61119059 A JPS61119059 A JP S61119059A
Authority
JP
Japan
Prior art keywords
wiring
film
forming
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24020184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334855B2 (de
Inventor
Riyouichi Tomoezuki
巴月　良一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24020184A priority Critical patent/JPS61119059A/ja
Publication of JPS61119059A publication Critical patent/JPS61119059A/ja
Publication of JPH0334855B2 publication Critical patent/JPH0334855B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP24020184A 1984-11-14 1984-11-14 半導体装置の製造方法 Granted JPS61119059A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24020184A JPS61119059A (ja) 1984-11-14 1984-11-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24020184A JPS61119059A (ja) 1984-11-14 1984-11-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61119059A true JPS61119059A (ja) 1986-06-06
JPH0334855B2 JPH0334855B2 (de) 1991-05-24

Family

ID=17055959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24020184A Granted JPS61119059A (ja) 1984-11-14 1984-11-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61119059A (de)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998535A (ja) * 1982-11-29 1984-06-06 Hitachi Ltd 半導体集積回路の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998535A (ja) * 1982-11-29 1984-06-06 Hitachi Ltd 半導体集積回路の製造方法

Also Published As

Publication number Publication date
JPH0334855B2 (de) 1991-05-24

Similar Documents

Publication Publication Date Title
US4670967A (en) Forming multilayer interconnections for a semiconductor device by vapor phase growth process
EP0143652B1 (de) Verfahren zum Herstellen von Mehrschicht-Leiterbahnen
JP2959758B2 (ja) コンタクトホール内の導電性プラグ形成方法
JPH01503021A (ja) シリコンウエハ内に貫通導体を形成する為の平担化方法
KR100338941B1 (ko) 반도체소자의 컨택 형성방법
JPH10214897A (ja) プラグ及びニアゼロオーバラップ相互接続線の製造
US6218287B1 (en) Method of fabricating a semiconductor structure
US5382544A (en) Manufacturing method of a semiconductor device utilizing thin metal film
KR19980070785A (ko) 반도체 장치 및 그 제조 방법
JPS61119059A (ja) 半導体装置の製造方法
JPH10209276A (ja) 配線形成方法
EP0191981B1 (de) Mehrschichtschaltung
JP3376965B2 (ja) 半導体装置及びその製造方法
JP3624513B2 (ja) 半導体装置の製造方法
JPH04196122A (ja) 半導体装置の製造方法
KR920008842B1 (ko) 반도체장치의 금속배선막 도포방법
KR100324020B1 (ko) 반도체소자의금속배선형성방법
JP3378693B2 (ja) 半導体装置の製造方法
JPH06244187A (ja) 半導体装置の製造方法
JPH05129223A (ja) 半導体装置の製造方法
JP3279737B2 (ja) 半導体素子の製造方法
KR0181959B1 (ko) 반도체 장치의 비아홀 형성방법
JPS628542A (ja) 半導体装置の製造方法
JPS61289648A (ja) 半導体装置の製造方法
JPS5841775B2 (ja) ハンドウタイソウチノセイゾウホウホウ