JPS61120471A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61120471A
JPS61120471A JP59242740A JP24274084A JPS61120471A JP S61120471 A JPS61120471 A JP S61120471A JP 59242740 A JP59242740 A JP 59242740A JP 24274084 A JP24274084 A JP 24274084A JP S61120471 A JPS61120471 A JP S61120471A
Authority
JP
Japan
Prior art keywords
impurity concentration
concentration region
gate electrode
region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59242740A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519827B2 (2
Inventor
Toshibumi Yoshikawa
俊文 吉川
Yukinori Nakakura
仲倉　幸典
Atsushi Kagisawa
篤 鍵沢
Nobuhiro Nishimoto
宜弘 西本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59242740A priority Critical patent/JPS61120471A/ja
Publication of JPS61120471A publication Critical patent/JPS61120471A/ja
Publication of JPH0519827B2 publication Critical patent/JPH0519827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
JP59242740A 1984-11-16 1984-11-16 半導体装置 Granted JPS61120471A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59242740A JPS61120471A (ja) 1984-11-16 1984-11-16 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59242740A JPS61120471A (ja) 1984-11-16 1984-11-16 半導体装置

Publications (2)

Publication Number Publication Date
JPS61120471A true JPS61120471A (ja) 1986-06-07
JPH0519827B2 JPH0519827B2 (2) 1993-03-17

Family

ID=17093546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59242740A Granted JPS61120471A (ja) 1984-11-16 1984-11-16 半導体装置

Country Status (1)

Country Link
JP (1) JPS61120471A (2)

Also Published As

Publication number Publication date
JPH0519827B2 (2) 1993-03-17

Similar Documents

Publication Publication Date Title
JP2001044431A (ja) 半導体装置
JPS5638867A (en) Insulated gate type field effect transistor
JPS63266882A (ja) 縦型絶縁ゲ−ト電界効果トランジスタ
JPS63252480A (ja) 縦形モス電界効果トランジスタ
US7339249B2 (en) Semiconductor device
JPS61120471A (ja) 半導体装置
JPS63119578A (ja) 半導体装置
JP2598446B2 (ja) Ｍｉｓ−ｆｅｔ
JPS6290964A (ja) 集積回路保護構造
JP2684712B2 (ja) 電界効果トランジスタ
JPS61120470A (ja) 半導体装置
JP2973450B2 (ja) 半導体装置
JPS62274778A (ja) 半導体装置
JPS60102770A (ja) 半導体装置
JP2676769B2 (ja) 半導体装置
JPS6066444A (ja) 半導体装置
SU402172A1 (ru) Способ защиты интегральных схем от влияния паразитных транзисторов
JPS5858747A (ja) Ｍｏｓ型半導体集積回路
JP3361382B2 (ja) トランジスタ
JP2743402B2 (ja) 化合物電界効果トランジスタ
JPH07115126A (ja) 半導体集積回路装置
JP2021082747A (ja) 半導体装置及び集積回路
JPS62104170A (ja) Ｍｏｓ型半導体装置
JPH05326949A (ja) 高耐圧ｍｏｓトランジスタ
JPS5837989B2 (ja) 電界効果半導体装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees