JPS6112653U - バキユ−ムチヤツク - Google Patents

バキユ−ムチヤツク

Info

Publication number
JPS6112653U
JPS6112653U JP9467384U JP9467384U JPS6112653U JP S6112653 U JPS6112653 U JP S6112653U JP 9467384 U JP9467384 U JP 9467384U JP 9467384 U JP9467384 U JP 9467384U JP S6112653 U JPS6112653 U JP S6112653U
Authority
JP
Japan
Prior art keywords
bakyu
whip
vacuum chuck
substrate
placing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9467384U
Other languages
English (en)
Inventor
強 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP9467384U priority Critical patent/JPS6112653U/ja
Publication of JPS6112653U publication Critical patent/JPS6112653U/ja
Pending legal-status Critical Current

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  • Jigs For Machine Tools (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図Ａは従来のバキュームチャックを用いたレジスト
塗布装置の断面図であり、第１図Ｂは第１図Ａの上面図
である。 第２図は本考案の実施例の断面図である。 尚図において、１・・・・・・モータ、２・・・・・・
モータスピンドル、３・・・・・・バキューム面、４・
・・・・・バキュームチャック軸、５・・・・・・メタ
ルマススク基板、６・・・・・・バキュームバルブ、７
・・曲レジストノズル、８・・・・・・カップ、９・・
・・・・エアー吹き出し口、１０・・・・・・エアー。

Claims (1)

    【実用新案登録請求の範囲】
  1. 基板を栽置するバキュームチャックにおいて、回転中に
    該基板の裏面にエアーを吹きつける機能が設けられてい
    ることを特徴とするバキュームチャック。
JP9467384U 1984-06-25 1984-06-25 バキユ−ムチヤツク Pending JPS6112653U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9467384U JPS6112653U (ja) 1984-06-25 1984-06-25 バキユ−ムチヤツク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9467384U JPS6112653U (ja) 1984-06-25 1984-06-25 バキユ−ムチヤツク

Publications (1)

Publication Number Publication Date
JPS6112653U true JPS6112653U (ja) 1986-01-24

Family

ID=30653367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9467384U Pending JPS6112653U (ja) 1984-06-25 1984-06-25 バキユ−ムチヤツク

Country Status (1)

Country Link
JP (1) JPS6112653U (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268425U (ja) * 1988-11-14 1990-05-24
JP2023093567A (ja) * 2020-07-07 2023-07-04 ラム リサーチ コーポレーション 照射フォトレジストパターニングのための統合乾式プロセス
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
US11988965B2 (en) 2020-01-15 2024-05-21 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12105422B2 (en) 2019-06-26 2024-10-01 Lam Research Corporation Photoresist development with halide chemistries
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
US12346035B2 (en) 2020-11-13 2025-07-01 Lam Research Corporation Process tool for dry removal of photoresist
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
US12504692B2 (en) 2022-07-01 2025-12-23 Lam Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
US12601976B2 (en) 2023-07-27 2026-04-14 Lam Research Corporation All-in-one dry development for metal-containing photoresist

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268425U (ja) * 1988-11-14 1990-05-24
US11921427B2 (en) 2018-11-14 2024-03-05 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
US12510825B2 (en) 2019-06-26 2025-12-30 Lam Research Corporation Photoresist development with halide chemistries
US12105422B2 (en) 2019-06-26 2024-10-01 Lam Research Corporation Photoresist development with halide chemistries
US12510826B2 (en) 2019-06-26 2025-12-30 Lam Research Corporation Photoresist development with halide chemistries
US11988965B2 (en) 2020-01-15 2024-05-21 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12474638B2 (en) 2020-01-15 2025-11-18 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12183604B2 (en) 2020-07-07 2024-12-31 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US12278125B2 (en) 2020-07-07 2025-04-15 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
JP2023093567A (ja) * 2020-07-07 2023-07-04 ラム リサーチ コーポレーション 照射フォトレジストパターニングのための統合乾式プロセス
US12346035B2 (en) 2020-11-13 2025-07-01 Lam Research Corporation Process tool for dry removal of photoresist
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
US12504692B2 (en) 2022-07-01 2025-12-23 Lam Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
US12601976B2 (en) 2023-07-27 2026-04-14 Lam Research Corporation All-in-one dry development for metal-containing photoresist

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