JPS61140102A - Manufacture of thin film resistor - Google Patents
Manufacture of thin film resistorInfo
- Publication number
- JPS61140102A JPS61140102A JP59263358A JP26335884A JPS61140102A JP S61140102 A JPS61140102 A JP S61140102A JP 59263358 A JP59263358 A JP 59263358A JP 26335884 A JP26335884 A JP 26335884A JP S61140102 A JPS61140102 A JP S61140102A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film resistor
- manufacture
- resistor
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims 3
- 239000000463 material Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は薄膜抵抗装置の製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] This invention relates to a method of manufacturing a thin film resistor device.
従来の薄膜抵抗装置においては、第４図示のように絶縁
基板１０上に薄膜抵抗１１をパターン形成し、コンタク
ト部分にアルミ配線ｔ２．ｔ５を形成していた。In a conventional thin film resistor device, a thin film resistor 11 is patterned on an insulating substrate 10 as shown in FIG. 4, and aluminum wiring t2. It was forming t5.
抵抗値はコンタクト部分の距離にＬシ決められるが、上
述の従来例では、アルミ配線のエツチング加工精度はあ
まシエぐなく、高精度の抵抗値を得ることが困難であっ
た。また抵抗体としてＯｒ・Ｓ１系の材料を用いたとき
配線材料のアルミニウム□
はシリコンＳ１と反応しやすぐ、Ｃｒ５ａｉ材の抵抗値
が変わるという欠点もあった。The resistance value is determined by the distance between the contact portions, but in the above-mentioned conventional example, the accuracy of etching the aluminum wiring was inconsistent, making it difficult to obtain a highly accurate resistance value. Furthermore, when an Or.S1-based material is used as a resistor, the wiring material aluminum □ reacts with silicon S1, resulting in an immediate change in the resistance value of the Cr5ai material.
この発明は上記従来技術における欠点を解決するための
もので、抵抗体の上を絶縁−でＩｍ覆し、その絶縁嗅に
コンタクト窓をあけることにＬす、コンタクト間の距離
を制御して高精度の抵抗を得ようとするものである。This invention is intended to solve the above-mentioned drawbacks of the prior art, and involves covering the resistor with an insulator, opening a contact window in the insulator, and controlling the distance between the contacts to achieve high accuracy. The aim is to obtain resistance.
第１図において、絶縁基板１上に薄膜抵抗体２をパター
ン形成する。抵抗体２の材料としては、Ｏｒ＊Ｓｊ、系
の材料などが用いられ、これを絶縁基板１上にデポジシ
ョンし、ホトエツチングでバター二／グする。その上に
シリコン酸化物Ｓｉｎ、にニジ絶縁１１！５を全１１ｉ
ｌｉＫ被覆形成した後、コンタクト部分４．５′をホト
エツチングで窓明けする（第２図）。そしてコンタクト
部分４．５にアルミニウムで配線パターン６．７を形成
する（第５図）。In FIG. 1, a thin film resistor 2 is patterned on an insulating substrate 1. As the material of the resistor 2, an Or*Sj type material is used, and this is deposited on the insulating substrate 1 and butter-printed by photo-etching. On top of that, silicon oxide Sin, and rainbow insulation 11!5 all 11i
After forming the liK coating, the contact portions 4.5' are opened by photoetching (FIG. 2). Then, a wiring pattern 6.7 made of aluminum is formed in the contact portion 4.5 (FIG. 5).
本発明においては、コンタクト部分が窓明けされるが、
絶縁１１ｇ８１０．の窓明けの方が従来Ｋかけるアルミ
配線ニジも梢度工くできるため、コンタクト間の距離の
制御がよ）正確にでき、したがって抵抗の精度を上げる
ことができる。また、抵抗材料１１ＣＯｒ−８１，系材
料を用いた場合には、Ｃｒ−８１系材料がアルミニウム
と接触するのはコンタクトホール部分だけに限られて、
これは一定かつ小さくすることができるため、薄膜抵抗
形成時における抵抗材料の比抵抗が保たれ、再現性のＬ
い抵抗値がえられる。In the present invention, the contact portion is opened, but
Insulation 11g810. By opening the window, it is possible to reduce the thickness of the aluminum wiring, which is conventionally required, so the distance between the contacts can be controlled more accurately, and the accuracy of the resistance can be improved. In addition, when using a resistive material 11COr-81, the contact of the Cr-81 material with aluminum is limited to the contact hole portion,
Since this can be kept constant and small, the specific resistance of the resistor material is maintained when forming a thin film resistor, and the reproducibility L
A high resistance value can be obtained.
第１〜第５図は本発明方法の実施例を製造工程を追って
示す断面図で、ｌ！４図は従来例の断面図である。
１・・・絶縁基板
２・・・薄嘆抵抗体
３・・・絶縁嘆
４・・・コンタクト部分
５・・・コンタクト部分
６・・・配線パターン
７・・・配線パターン
以 上1 to 5 are cross-sectional views showing an embodiment of the method of the present invention following the manufacturing process. FIG. 4 is a sectional view of a conventional example. 1... Insulating substrate 2... Waving resistor 3... Insulating spacing 4... Contact portion 5... Contact portion 6... Wiring pattern 7... Wiring pattern and above
Claims (1)
縁膜を形成し、上記絶縁膜をエッチングしてコンタクト
部分を窓明けし、上記コンタクト部分に配線形成をおこ
なうことを特徴とする薄膜抵抗装置の製造方法。A thin film resistor characterized in that a thin film resistor is patterned on an insulating substrate, an insulating film is formed on the insulating film, the insulating film is etched to open a window in the contact part, and wiring is formed in the contact part. Method of manufacturing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59263358A JPS61140102A (en) | 1984-12-13 | 1984-12-13 | Manufacture of thin film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59263358A JPS61140102A (en) | 1984-12-13 | 1984-12-13 | Manufacture of thin film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61140102A true JPS61140102A (en) | 1986-06-27 |
Family
ID=17388372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59263358A Pending JPS61140102A (en) | 1984-12-13 | 1984-12-13 | Manufacture of thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61140102A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5036012A (en) * | 1973-08-03 | 1975-04-04 | ||
| JPS50131488A (en) * | 1974-04-03 | 1975-10-17 | ||
| JPS5259849A (en) * | 1975-11-11 | 1977-05-17 | Nippon Electric Co | Method of producing thin film integrated circuit including resistor and capacitor |
-
1984
- 1984-12-13 JP JP59263358A patent/JPS61140102A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5036012A (en) * | 1973-08-03 | 1975-04-04 | ||
| JPS50131488A (en) * | 1974-04-03 | 1975-10-17 | ||
| JPS5259849A (en) * | 1975-11-11 | 1977-05-17 | Nippon Electric Co | Method of producing thin film integrated circuit including resistor and capacitor |
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