JPS6115156B2 - - Google Patents

Info

Publication number: JPS6115156B2
Authority: JP; Japan
Prior art keywords: etching; workpiece; gas; taper; etching method
Prior art date: 1978-10-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP12462478A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5554572A (en

Inventor

Hiroshi Ono

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-10-12

Filing date

1978-10-12

Publication date

1986-04-22

1978-10-12 Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd

1978-10-12 Priority to JP12462478A priority Critical patent/JPS5554572A/ja

1980-04-21 Publication of JPS5554572A publication Critical patent/JPS5554572A/ja

1986-04-22 Publication of JPS6115156B2 publication Critical patent/JPS6115156B2/ja

Status Granted legal-status Critical Current

Links

238000005530 etching Methods 0.000 claims description 30
238000000034 method Methods 0.000 claims description 26
VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 8
229920002120 photoresistant polymer Polymers 0.000 claims description 6
230000004913 activation Effects 0.000 claims description 3
239000007789 gas Substances 0.000 description 16
238000004381 surface treatment Methods 0.000 description 11
239000004065 semiconductor Substances 0.000 description 10
238000004519 manufacturing process Methods 0.000 description 7
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
238000000992 sputter etching Methods 0.000 description 4
239000000460 chlorine Substances 0.000 description 3
238000001020 plasma etching Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
229910052801 chlorine Inorganic materials 0.000 description 2
238000001312 dry etching Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000012776 electronic material Substances 0.000 description 2
239000011521 glass Substances 0.000 description 2
239000000203 mixture Substances 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
239000011574 phosphorus Substances 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
239000000126 substance Substances 0.000 description 2
239000000758 substrate Substances 0.000 description 2
229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
101100328843 Dictyostelium discoideum cofB gene Proteins 0.000 description 1
VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
239000005977 Ethylene Substances 0.000 description 1
XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910010413 TiO 2 Inorganic materials 0.000 description 1
239000003570 air Substances 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
229910002092 carbon dioxide Inorganic materials 0.000 description 1
239000001569 carbon dioxide Substances 0.000 description 1
IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
239000007795 chemical reaction product Substances 0.000 description 1
KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
229910000041 hydrogen chloride Inorganic materials 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
239000000463 material Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910021344 molybdenum silicide Inorganic materials 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000002245 particle Substances 0.000 description 1
238000000059 patterning Methods 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000004904 shortening Methods 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Landscapes

ing And Chemical Polishing (AREA)
Drying Of Semiconductors (AREA)

JP12462478A 1978-10-12 1978-10-12 Etching method Granted JPS5554572A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP12462478A JPS5554572A (en)	1978-10-12	1978-10-12	Etching method

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP12462478A JPS5554572A (en)	1978-10-12	1978-10-12	Etching method

Publications (2)

Publication Number	Publication Date
JPS5554572A JPS5554572A (en)	1980-04-21
JPS6115156B2 true JPS6115156B2 (fr)	1986-04-22

Family

ID=14890018

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP12462478A Granted JPS5554572A (en)	1978-10-12	1978-10-12	Etching method

Country Status (1)

Country	Link
JP (1)	JPS5554572A (fr)

1978
- 1978-10-12 JP JP12462478A patent/JPS5554572A/ja active Granted

Also Published As

Publication number	Publication date
JPS5554572A (en)	1980-04-21

Publication	Publication Date	Title
US5312518A (en)	1994-05-17	Dry etching method
JP2553513B2 (ja)	1996-11-13	有機マスクを状態調節するための方法
US4069096A (en)	1978-01-17	Silicon etching process
JPH11260785A (ja)	1999-09-24	フォトレジスト材料とエッチング残留物の除去方法
US5618379A (en)	1997-04-08	Selective deposition process
US5387312A (en)	1995-02-07	High selective nitride etch
US5338395A (en)	1994-08-16	Method for enhancing etch uniformity useful in etching submicron nitride features
WO2003012851A2 (fr)	2003-02-13	Procede de gravure de couches ferroelectriques
JPS6115156B2 (fr)	1986-04-22
JPS6255694B2 (fr)	1987-11-20
JPH03286578A (ja)	1991-12-17	ニオブ膜エッチング用アルミニウムマスクの加工方法
JP2834129B2 (ja)	1998-12-09	低温ドライエツチング方法
JP3718537B2 (ja)	2005-11-24	酸化シリコン系材料層のプラズマエッチング方法
JP2872522B2 (ja)	1999-03-17	半導体装置のドライエッチング方法
JPH03291929A (ja)	1991-12-24	ドライエッチング方法
JP3079656B2 (ja)	2000-08-21	ドライエッチング方法
US5292402A (en)	1994-03-08	Masking material for applications in plasma etching
JP2746494B2 (ja)	1998-05-06	レジスト除去方法
JP3923136B2 (ja)	2007-05-30	半導体装置及びその製造方法
JP2569754B2 (ja)	1997-01-08	化合物半導体装置の製造方法
JP3326662B2 (ja)	2002-09-24	酸化シリコン系材料層のプラズマエッチング方法
JP2654143B2 (ja)	1997-09-17	選択気相成長方法
KR100312985B1 (ko)	2002-01-17	반도체소자제조방법
JP3271085B2 (ja)	2002-04-02	エッチング方法
JPS6258663A (ja)	1987-03-14	半導体装置の製造方法