JPS6116588A - 半導体レ−ザ波長安定化装置 - Google Patents
半導体レ−ザ波長安定化装置Info
- Publication number
- JPS6116588A JPS6116588A JP13762184A JP13762184A JPS6116588A JP S6116588 A JPS6116588 A JP S6116588A JP 13762184 A JP13762184 A JP 13762184A JP 13762184 A JP13762184 A JP 13762184A JP S6116588 A JPS6116588 A JP S6116588A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- active layer
- current
- semiconductor laser
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000003381 stabilizer Substances 0.000 title 1
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 230000010355 oscillation Effects 0.000 claims description 22
- 230000000087 stabilizing effect Effects 0.000 claims description 4
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 230000010363 phase shift Effects 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13762184A JPS6116588A (ja) | 1984-07-03 | 1984-07-03 | 半導体レ−ザ波長安定化装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13762184A JPS6116588A (ja) | 1984-07-03 | 1984-07-03 | 半導体レ−ザ波長安定化装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6116588A true JPS6116588A (ja) | 1986-01-24 |
| JPH0550874B2 JPH0550874B2 (fr) | 1993-07-30 |
Family
ID=15202951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13762184A Granted JPS6116588A (ja) | 1984-07-03 | 1984-07-03 | 半導体レ−ザ波長安定化装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6116588A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027956U (fr) * | 1988-06-17 | 1990-01-18 |
-
1984
- 1984-07-03 JP JP13762184A patent/JPS6116588A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027956U (fr) * | 1988-06-17 | 1990-01-18 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0550874B2 (fr) | 1993-07-30 |
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