JPH0550874B2 - - Google Patents

Info

Publication number
JPH0550874B2
JPH0550874B2 JP13762184A JP13762184A JPH0550874B2 JP H0550874 B2 JPH0550874 B2 JP H0550874B2 JP 13762184 A JP13762184 A JP 13762184A JP 13762184 A JP13762184 A JP 13762184A JP H0550874 B2 JPH0550874 B2 JP H0550874B2
Authority
JP
Japan
Prior art keywords
electrode
current
active layer
layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13762184A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6116588A (ja
Inventor
Kazuhisa Kaede
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP13762184A priority Critical patent/JPS6116588A/ja
Publication of JPS6116588A publication Critical patent/JPS6116588A/ja
Publication of JPH0550874B2 publication Critical patent/JPH0550874B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP13762184A 1984-07-03 1984-07-03 半導体レ−ザ波長安定化装置 Granted JPS6116588A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13762184A JPS6116588A (ja) 1984-07-03 1984-07-03 半導体レ−ザ波長安定化装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13762184A JPS6116588A (ja) 1984-07-03 1984-07-03 半導体レ−ザ波長安定化装置

Publications (2)

Publication Number Publication Date
JPS6116588A JPS6116588A (ja) 1986-01-24
JPH0550874B2 true JPH0550874B2 (fr) 1993-07-30

Family

ID=15202951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13762184A Granted JPS6116588A (ja) 1984-07-03 1984-07-03 半導体レ−ザ波長安定化装置

Country Status (1)

Country Link
JP (1) JPS6116588A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH078129Y2 (ja) * 1988-06-17 1995-03-01 三菱自動車工業株式会社 ホーニング砥石拡張装置

Also Published As

Publication number Publication date
JPS6116588A (ja) 1986-01-24

Similar Documents

Publication Publication Date Title
US4669086A (en) Frequency-stabilized semiconductor laser oscillator
US6252895B1 (en) Distributed feedback semiconductor laser in which light intensity distributions differ in different polarization modes, and driving method therefor
US4677630A (en) Oscillation frequency stabilized semiconductor laser
US6577660B1 (en) Distributed feedback type semiconductor laser device having gradually-changed coupling coefficient
KR20040054073A (ko) 다영역 자기모드 잠김 반도체 레이저 다이오드
US4794608A (en) Semiconductor laser device
US5502741A (en) Direct amplitude modulation of lasers
US6111906A (en) Distributed-feedback semiconductor laser
CA1252188A (fr) Structure de laser a injection monomode
KR100526999B1 (ko) 다영역 ｄｆｂ 레이저 다이오드
JPH11312846A (ja) 偏波依存性を持つ位相シフト領域を有する分布帰還型半導体レーザ、それを用いた光送信機及び光通信システム
JPH04100287A (ja) 半導体レーザ装置
JPS63166281A (ja) 分布帰還型半導体レ−ザ装置
KR100429531B1 (ko) 분포귀환형 반도체 레이저
JP2018067604A (ja) 光変調器付き半導体レーザ装置
JPH0584077B2 (fr)
JP2770722B2 (ja) 波長可変半導体レーザの製造方法
JPS6116588A (ja) 半導体レ−ザ波長安定化装置
JPH0770789B2 (ja) 分布帰還型半導体レーザおよびその製造方法
JPH07118568B2 (ja) 分布帰還型半導体レーザ
JP2669045B2 (ja) 分布帰還型半導体レーザの製造方法
JP3166236B2 (ja) 半導体レーザおよびその製造方法
JPH10190150A (ja) アレイ型半導体光源装置、その駆動方法、およびそれを用いた波長分割多重光伝送システム
JP3450573B2 (ja) 半導体レーザ装置、その駆動方法及びそれを用いた光通信システム
JPH02305488A (ja) 半導体発光装置