JPS6116592A - 半導体レ−ザのチツプ製造方法 - Google Patents

半導体レ−ザのチツプ製造方法

Info

Publication number: JPS6116592A
Authority: JP; Japan
Prior art keywords: chip; adhesive sheet; wafer; coating; cleavage
Prior art date: 1984-07-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP59137678A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0260076B2 (th

Inventor

Haruo Tanaka

田中　治夫

Hayamizu Fukada

深田　速水

Masahito Mushigami

雅人虫上

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Rohm Co Ltd

Original Assignee

Rohm Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-07-02

Filing date

1984-07-02

Publication date

1986-01-24

1984-07-02 Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd

1984-07-02 Priority to JP59137678A priority Critical patent/JPS6116592A/ja

1986-01-24 Publication of JPS6116592A publication Critical patent/JPS6116592A/ja

1990-12-14 Publication of JPH0260076B2 publication Critical patent/JPH0260076B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 6
238000004519 manufacturing process Methods 0.000 title claims description 5
239000000853 adhesive Substances 0.000 claims abstract description 23
230000001070 adhesive effect Effects 0.000 claims abstract description 23
239000011248 coating agent Substances 0.000 claims abstract description 18
238000000576 coating method Methods 0.000 claims abstract description 18
238000003776 cleavage reaction Methods 0.000 claims abstract description 16
230000007017 scission Effects 0.000 claims abstract description 16
239000003513 alkali Substances 0.000 claims abstract description 4
238000000034 method Methods 0.000 claims description 26
239000003963 antioxidant agent Substances 0.000 claims description 11
230000003078 antioxidant effect Effects 0.000 claims description 11
238000001035 drying Methods 0.000 claims description 3
238000003825 pressing Methods 0.000 claims description 3
238000005406 washing Methods 0.000 claims description 3
238000005520 cutting process Methods 0.000 claims description 2
239000004820 Pressure-sensitive adhesive Substances 0.000 claims 1
238000000926 separation method Methods 0.000 abstract description 5
230000003064 anti-oxidating effect Effects 0.000 abstract description 4
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
235000012431 wafers Nutrition 0.000 abstract 4
230000002708 enhancing effect Effects 0.000 abstract 1
239000011295 pitch Substances 0.000 abstract 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
239000011888 foil Substances 0.000 description 5
229910003460 diamond Inorganic materials 0.000 description 3
239000010432 diamond Substances 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
230000000694 effects Effects 0.000 description 2
239000007888 film coating Substances 0.000 description 2
238000009501 film coating Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
229910005091 Si3N Inorganic materials 0.000 description 1
230000002411 adverse Effects 0.000 description 1
239000012670 alkaline solution Substances 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
238000005219 brazing Methods 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
229910052593 corundum Inorganic materials 0.000 description 1
238000005336 cracking Methods 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
229920003023 plastic Polymers 0.000 description 1
239000004033 plastic Substances 0.000 description 1
239000002994 raw material Substances 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1
125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
229920002554 vinyl polymer Polymers 0.000 description 1
229910001845 yogo sapphire Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Dicing (AREA)

JP59137678A 1984-07-02 1984-07-02 半導体レ−ザのチツプ製造方法 Granted JPS6116592A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP59137678A JPS6116592A (ja)	1984-07-02	1984-07-02	半導体レ−ザのチツプ製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59137678A JPS6116592A (ja)	1984-07-02	1984-07-02	半導体レ−ザのチツプ製造方法

Publications (2)

Publication Number	Publication Date
JPS6116592A true JPS6116592A (ja)	1986-01-24
JPH0260076B2 JPH0260076B2 (th)	1990-12-14

Family

ID=15204255

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59137678A Granted JPS6116592A (ja)	1984-07-02	1984-07-02	半導体レ−ザのチツプ製造方法

Country Status (1)

Country	Link
JP (1)	JPS6116592A (th)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5081895A (en) *	1989-08-11	1992-01-21	Kabushiki Kaisha Kawai Gakki Seisakusho	Keyboard
WO2001086719A1 (fr) *	2000-05-10	2001-11-15	Gemplus	Isolation de puces par couche mince pour connexion par polymere conducteur
JP2007201305A (ja) *	2006-01-30	2007-08-09	Sony Corp	半導体レーザ装置、半導体レーザチップ、および半導体レーザ装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS52134387A (en) *	1976-05-06	1977-11-10	Oki Electric Ind Co Ltd	Semiconductor laser device
JPS55110088A (en) *	1979-02-16	1980-08-25	Mitsubishi Electric Corp	Measurement of semiconductor laser characteristic
JPS5671952A (en) *	1979-11-16	1981-06-15	Nec Home Electronics Ltd	Breaking semiconductor wafer
JPS58125886A (ja) *	1982-01-22	1983-07-27	Hitachi Ltd	半導体装置の製造方法
JPS58138050A (ja) *	1982-02-10	1983-08-16	Sumitomo Electric Ind Ltd	半導体装置の製造方法

1984
- 1984-07-02 JP JP59137678A patent/JPS6116592A/ja active Granted

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS52134387A (en) *	1976-05-06	1977-11-10	Oki Electric Ind Co Ltd	Semiconductor laser device
JPS55110088A (en) *	1979-02-16	1980-08-25	Mitsubishi Electric Corp	Measurement of semiconductor laser characteristic
JPS5671952A (en) *	1979-11-16	1981-06-15	Nec Home Electronics Ltd	Breaking semiconductor wafer
JPS58125886A (ja) *	1982-01-22	1983-07-27	Hitachi Ltd	半導体装置の製造方法
JPS58138050A (ja) *	1982-02-10	1983-08-16	Sumitomo Electric Ind Ltd	半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5081895A (en) *	1989-08-11	1992-01-21	Kabushiki Kaisha Kawai Gakki Seisakusho	Keyboard
WO2001086719A1 (fr) *	2000-05-10	2001-11-15	Gemplus	Isolation de puces par couche mince pour connexion par polymere conducteur
FR2808920A1 (fr) *	2000-05-10	2001-11-16	Gemplus Card Int	Procede de protection de puces de circuit integre
JP2007201305A (ja) *	2006-01-30	2007-08-09	Sony Corp	半導体レーザ装置、半導体レーザチップ、および半導体レーザ装置の製造方法

Also Published As

Publication number	Publication date
JPH0260076B2 (th)	1990-12-14

Publication	Publication Date	Title
US7140951B2 (en)	2006-11-28	Semiconductor device manufacturing apparatus and semiconductor device manufacturing method for forming semiconductor chips by dividing semiconductor wafer
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JP2002329684A (ja)	2002-11-15	窒化物半導体チップ及びその製造方法
JPH0725463B2 (ja)	1995-03-22	半導体装置の製造方法
JPS6116592A (ja)	1986-01-24	半導体レ−ザのチツプ製造方法
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