JPS61190841U - - Google Patents
Info
- Publication number
- JPS61190841U JPS61190841U JP7584285U JP7584285U JPS61190841U JP S61190841 U JPS61190841 U JP S61190841U JP 7584285 U JP7584285 U JP 7584285U JP 7584285 U JP7584285 U JP 7584285U JP S61190841 U JPS61190841 U JP S61190841U
- Authority
- JP
- Japan
- Prior art keywords
- gauge
- shear type
- temperature
- pressure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
第１図は本考案の一実施例を示す構成図、第２
図は第１図の装置のゲージ配置図、第３図は第２
図のゲージの回路図、第４図は第２図のゲージの
動作説明図、第５図は本考案の他の実施例を示す
ゲージ配置図、第６図は従来装置の構成図である
。
２……ゲージチツプ、ＧＰＴ……せん断形ゲー
ジ、ＧＪ……発熱抵抗体。
Fig. 1 is a configuration diagram showing one embodiment of the present invention;
The figure is a gauge layout diagram of the device in Figure 1, and Figure 3 is the gauge layout of the device in Figure 2.
4 is an explanatory diagram of the operation of the gauge in FIG. 2, FIG. 5 is a gauge layout diagram showing another embodiment of the present invention, and FIG. 6 is a configuration diagram of a conventional device. 2... Gauge chip, GPT... Shear type gauge, GJ... Heat generating resistor.
Claims (1)
ゲージチツプ上にＰ形で形成されたせん断形ゲー
ジを有する半導体圧力変換器において、前記せん
断形ゲージの結晶軸が〈１００〉方向に前記ゲー
ジチツプ上に形成され前記せん断形ゲージの入力
端に定電流が供給されて被測定圧力に応答する電
圧ＥＰを出力端より得ると同時に前記ゲージチツ
プの温度変化に応答する電圧ＥＴを前記入力端よ
り得る圧力温度ゲージと、前記せん断形ゲージに
近接して平行に形成され前記せん断形ゲージをジ
ユール熱によつて加熱する発熱抵抗体とを具備す
るとともに、前記発熱抵抗体の発熱量を周期的に
変化させて、第１の温度ｔ１と第２の温度ｔ２で
圧力温度ゲージの電圧ＥＰ及びＥＴをそれぞれ検
出し、所定の演算を行なつて測定圧力を知るよう
にしたことを特徴とする半導体圧力変換器。 (2) 実用新案登録請求の範囲第１項記載の半導
体圧力変換器において、前記所定の演算は、 を含むことを特徴とする半導体圧力変換器。[Claims for Utility Model Registration] (1) In a semiconductor pressure transducer having a shear type gauge formed in a P shape on a semiconductor single crystal gauge chip whose crystal plane is in the 100 plane direction, the crystal axis of the shear type gauge is is formed on the gauge chip in the <100> direction, and a constant current is supplied to the input end of the shear type gauge to obtain a voltage EP responsive to the pressure to be measured from the output end, and at the same time a voltage responsive to temperature changes of the gauge chip. A pressure and temperature gauge that obtains ET from the input end, and a heating resistor that is formed in parallel to the shear type gauge and heats the shear type gauge with Joule heat; The calorific value is changed periodically, the voltages EP and ET of the pressure-temperature gauge are detected at the first temperature t1 and the second temperature t2 , respectively, and a predetermined calculation is performed to determine the measured pressure. A semiconductor pressure transducer characterized by: (2) Utility Model Registration The semiconductor pressure transducer according to claim 1, wherein the predetermined calculation includes the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7584285U JPS61190841U (en) | 1985-05-22 | 1985-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7584285U JPS61190841U (en) | 1985-05-22 | 1985-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61190841U true JPS61190841U (en) | 1986-11-27 |
Family
ID=30617437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7584285U Pending JPS61190841U (en) | 1985-05-22 | 1985-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61190841U (en) |
-
1985
- 1985-05-22 JP JP7584285U patent/JPS61190841U/ja active Pending
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