JPS61219800A - 炭化珪素ウイスカ−の製造方法 - Google Patents
炭化珪素ウイスカ−の製造方法Info
- Publication number
- JPS61219800A JPS61219800A JP60062266A JP6226685A JPS61219800A JP S61219800 A JPS61219800 A JP S61219800A JP 60062266 A JP60062266 A JP 60062266A JP 6226685 A JP6226685 A JP 6226685A JP S61219800 A JPS61219800 A JP S61219800A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide whiskers
- grains
- sulfide particles
- sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062266A JPS61219800A (ja) | 1985-03-26 | 1985-03-26 | 炭化珪素ウイスカ−の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062266A JPS61219800A (ja) | 1985-03-26 | 1985-03-26 | 炭化珪素ウイスカ−の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61219800A true JPS61219800A (ja) | 1986-09-30 |
| JPH058160B2 JPH058160B2 (fr) | 1993-02-01 |
Family
ID=13195169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60062266A Granted JPS61219800A (ja) | 1985-03-26 | 1985-03-26 | 炭化珪素ウイスカ−の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61219800A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218400A (ja) * | 1988-07-07 | 1990-01-22 | Chugai Ro Co Ltd | Si系ウィスカー製造装置 |
-
1985
- 1985-03-26 JP JP60062266A patent/JPS61219800A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218400A (ja) * | 1988-07-07 | 1990-01-22 | Chugai Ro Co Ltd | Si系ウィスカー製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH058160B2 (fr) | 1993-02-01 |
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