JPS61220385A - ジヨセフソン接合素子 - Google Patents

ジヨセフソン接合素子

Info

Publication number
JPS61220385A
JPS61220385A JP60061244A JP6124485A JPS61220385A JP S61220385 A JPS61220385 A JP S61220385A JP 60061244 A JP60061244 A JP 60061244A JP 6124485 A JP6124485 A JP 6124485A JP S61220385 A JPS61220385 A JP S61220385A
Authority
JP
Japan
Prior art keywords
film
magnesium oxide
lower electrode
josephson junction
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60061244A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0255955B2 (da
Inventor
Akira Shoji
彰 東海林
Fujitoshi Shinoki
篠木　藤敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60061244A priority Critical patent/JPS61220385A/ja
Publication of JPS61220385A publication Critical patent/JPS61220385A/ja
Publication of JPH0255955B2 publication Critical patent/JPH0255955B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP60061244A 1985-03-26 1985-03-26 ジヨセフソン接合素子 Granted JPS61220385A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60061244A JPS61220385A (ja) 1985-03-26 1985-03-26 ジヨセフソン接合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60061244A JPS61220385A (ja) 1985-03-26 1985-03-26 ジヨセフソン接合素子

Publications (2)

Publication Number Publication Date
JPS61220385A true JPS61220385A (ja) 1986-09-30
JPH0255955B2 JPH0255955B2 (da) 1990-11-28

Family

ID=13165624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60061244A Granted JPS61220385A (ja) 1985-03-26 1985-03-26 ジヨセフソン接合素子

Country Status (1)

Country Link
JP (1) JPS61220385A (da)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047390A (en) * 1988-10-03 1991-09-10 Matsushita Electric Industrial Co., Ltd. Josephson devices and process for manufacturing the same
US5099294A (en) * 1989-08-01 1992-03-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
JPH04299586A (ja) * 1991-03-27 1992-10-22 Agency Of Ind Science & Technol ジョセフソン接合の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047390A (en) * 1988-10-03 1991-09-10 Matsushita Electric Industrial Co., Ltd. Josephson devices and process for manufacturing the same
US5099294A (en) * 1989-08-01 1992-03-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure
JPH04299586A (ja) * 1991-03-27 1992-10-22 Agency Of Ind Science & Technol ジョセフソン接合の作製方法

Also Published As

Publication number Publication date
JPH0255955B2 (da) 1990-11-28

Similar Documents

Publication Publication Date Title
KR910002311B1 (ko) 초전도 디바이스
JP2664491B2 (ja) 積層ペロブスカイト銅酸化物超電導体の薄膜のためのサブストレート、このサブストレートからなる超電導マイクロ波回路素子、及びそれを製造する方法
Pavlov et al. Fabrication of high-temperature quasi-two-dimensional superconductors at the interface of a ferroelectric Ba 0.8 Sr 0.2 TiO 3 film and an insulating parent compound of La 2 CuO 4
JP2641447B2 (ja) 超電導スイツチング素子
JP2523647B2 (ja) 金属酸化物超電導薄膜
US5231077A (en) Active device having an oxide superconductor and a fabrication process thereof
JPH0255955B2 (da)
Wasa Thin films as material engineering
JPH02391A (ja) 超電導電界効果トランジスタ
JP2907831B2 (ja) ジョセフソン素子
JP3379533B2 (ja) 超電導デバイスの製造方法
JPH0484469A (ja) 三端子デバイス
JP2955641B2 (ja) イン サイチュー型ジョセフソン接合構造
JPH02194667A (ja) 超伝導トランジスタおよびその製造方法
JPH0194681A (ja) 超電導カップリング装置
JP2852753B2 (ja) 酸化物超伝導素子および酸化物超伝導体薄膜の製造方法
JP2844206B2 (ja) 酸化物超伝導素子および酸化物超伝導体薄膜の製造方法
JPH0338075A (ja) 多層電子的薄膜素子を製造する方法
JP2966378B2 (ja) Ｂａ−Ｋ−Ｂｉ−Ｏ系超電導薄膜の製造方法
JP2698858B2 (ja) 酸化物超伝導体の成膜方法
JPH0831623B2 (ja) 超電導接合装置
JPH03242320A (ja) 酸化物超伝導体薄膜
JPH05160450A (ja) 超電導ジョセフソン素子およびその製造方法
JPS62189776A (ja) ジヨセフソン接合素子及びその製法
JPS58108739A (ja) ジヨセフソン接合装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term