JPS61230356A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS61230356A
JPS61230356A JP60072133A JP7213385A JPS61230356A JP S61230356 A JPS61230356 A JP S61230356A JP 60072133 A JP60072133 A JP 60072133A JP 7213385 A JP7213385 A JP 7213385A JP S61230356 A JPS61230356 A JP S61230356A
Authority
JP
Japan
Prior art keywords
type
insulated gate
semiconductor substrate
misfet
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60072133A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0344424B2 (de
Inventor
Kenji Kondo
賢司 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60072133A priority Critical patent/JPS61230356A/ja
Publication of JPS61230356A publication Critical patent/JPS61230356A/ja
Publication of JPH0344424B2 publication Critical patent/JPH0344424B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60072133A 1985-04-05 1985-04-05 半導体集積回路 Granted JPS61230356A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60072133A JPS61230356A (ja) 1985-04-05 1985-04-05 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60072133A JPS61230356A (ja) 1985-04-05 1985-04-05 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS61230356A true JPS61230356A (ja) 1986-10-14
JPH0344424B2 JPH0344424B2 (de) 1991-07-05

Family

ID=13480486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60072133A Granted JPS61230356A (ja) 1985-04-05 1985-04-05 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS61230356A (de)

Also Published As

Publication number Publication date
JPH0344424B2 (de) 1991-07-05

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