JPS612331A - Resin sealing system for semiconductor element - Google Patents

Resin sealing system for semiconductor element

Info

Publication number
JPS612331A
JPS612331A JP59124214A JP12421484A JPS612331A JP S612331 A JPS612331 A JP S612331A JP 59124214 A JP59124214 A JP 59124214A JP 12421484 A JP12421484 A JP 12421484A JP S612331 A JPS612331 A JP S612331A
Authority
JP
Japan
Prior art keywords
semiconductor element
resin
sealing resin
disk
thinner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59124214A
Other languages
Japanese (ja)
Inventor
Shin Tada
多田　伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59124214A priority Critical patent/JPS612331A/en
Publication of JPS612331A publication Critical patent/JPS612331A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/011—Apparatus therefor
    • H10W72/0113—Apparatus for manufacturing die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To make a semiconductor element thinner while making its shape uniform by a method wherein, after dripping sealing resin around the sidewall of semiconductor element, a film disc is bonded directly on the semiconductor element. CONSTITUTION:Permeating resin 4 is injected by means of capillarity between a wiring substrate 1 and a semiconductor element 2 flip-chip bonded thereon and then sealing resin 7 with slightly higher viscosity is further injected. Next a film disc 8 with adhesive 9 is bonded on the elements 2 to attract the sealing resin 7 encircling the sidewall of element 2 to the disc 8. The film disc 8 and the element 2 are heated to be hardened as they are. Through these procedures, an electronic part may be produced thinner while making its shape uniform.

Description

【発明の詳細な説明】 く技術分野〉 本発明は、半導体素子の樹脂封止方式に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a resin sealing method for semiconductor elements.

〈従来技術〉 従来の半導体素子の樹脂封止方式は、第２図（イ）〜（
ニ）に示すように、配線基板１と配線基板１にフリップ
チップボンティングされた半導体素子２の間に樹脂吐出
ノズル３を使用して、浸透樹脂４を注入しくイ）、注入
後半導体素子２の上に封止樹脂５を滴下したのも（ロ）
、（ハ）、該封止樹脂５は、加熱。<Prior art> The conventional resin encapsulation method for semiconductor elements is shown in Fig. 2 (a) to (
As shown in d), the penetrating resin 4 is injected between the wiring board 1 and the semiconductor element 2 flip-chip bonded to the wiring board 1 using the resin discharge nozzle 3. The sealing resin 5 was also dropped on top of (b)
(c) The sealing resin 5 is heated.

硬化する際温度上昇とともに粘度か下かり形状が不揃に
なるので、これを防ぐために封止樹脂５の」−をディス
ク６で押し利は加熱硬化させている。During curing, the viscosity or drop shape becomes irregular as the temperature rises, so to prevent this, the sealing resin 5 is pressed down with a disk 6 and hardened by heating.

しかしながらこの樹脂封止方式によれば、半導体素子２
とディスク６との間の封止樹脂層が５０〜１００μｍ１
デイスク６自体か＋５０−２５０μｍ程度となり、どう
しても薄型化することか出来なかった。However, according to this resin sealing method, the semiconductor element 2
The sealing resin layer between and the disk 6 is 50 to 100 μm1
The disk 6 itself was about +50-250 μm, and it was impossible to make it thinner.

そこで薄型化のためには、たとえばディスク６の薄型化
か考えられるか、この場合封止樹脂の表面張力により、
ディスク板の中央部か盛り−Ｌかってしまいかえって厚
くなってしまう。Therefore, in order to make the disk thinner, for example, it may be possible to make the disk 6 thinner.In this case, due to the surface tension of the sealing resin,
The central part of the disk plate is bent over at the center, making it thicker.

また加圧を充分に加えてディスク６と半導体素子２の間
の樹脂層を薄くさせることが考えられるが、この場合加
圧装置の操作等に手間がかかると共に、封止樹脂にスト
レスがたまりひび割れの原因となってしまう。It is also possible to thin the resin layer between the disk 6 and the semiconductor element 2 by applying sufficient pressure, but in this case, it takes time to operate the pressure device, and stress accumulates on the sealing resin, causing cracks. This may cause

〈目　的〉 本発明はかかる従来の欠点に鑑みて成されたもので、半
導体素子の側壁を囲むように、配線基板−にに封止樹脂
を設け、かつ半導体素子の上面に直接フィルムディスク
を接着することにより厚みを薄くし、形状を揃わせた半
導体素子の樹脂封止方式を提供することを目的とする。<Purpose> The present invention has been made in view of the above-mentioned drawbacks of the conventional art, and includes providing a sealing resin on a wiring board so as to surround the side walls of a semiconductor element, and directly attaching a film disk to the upper surface of the semiconductor element. The object of the present invention is to provide a resin encapsulation method for semiconductor elements in which the thickness is reduced by adhesion and the shape is uniform.

〈実施例〉 以下図にもとづいて本発明の詳細な説明する。<Example> The present invention will be explained in detail below based on the drawings.

第１図（イ）〜に）は本発明方式を説明する図である。FIGS. 1(A) to 1(A) are diagrams for explaining the system of the present invention.

本発明の半導体素子の樹脂封止方式は、配線基板ｌと配
線基板１にフリップチップボンディングされた半導体素
子２の間に、従来例と同じように浸透樹脂４を毛細管現
象を利用して注入しく１′）、注入後半導体素子２の側
壁を囲むように従来例よりもやや高粘度の封止樹脂７を
ノズルにて図示の如く滴ドする（口）、（ハ）。次に樹
脂を滴下していない半導体素子の」−面に接着剤９イ」
フィルムディスク８（例えば、利質としてポリエステル
フィルム、接着剤としてつ１〜タン系接着剤を用いる。In the resin sealing method of the semiconductor element of the present invention, the penetrating resin 4 is injected between the wiring board 1 and the semiconductor element 2 flip-chip bonded to the wiring board 1 using capillary action, as in the conventional example. 1') After injection, the sealing resin 7 having a slightly higher viscosity than the conventional example is dropped using a nozzle as shown in the figure so as to surround the side wall of the semiconductor element 2 (port), (c). Next, apply adhesive 9 on the - side of the semiconductor element on which resin has not been applied.
Film disk 8 (for example, a polyester film is used as the material and a tan-based adhesive is used as the adhesive.

）を接着させて、半導体素子２の側壁を囲んでいる封止
樹脂７をフィルムディスク８にすいよせるに）。そして
この状態で加熱硬化させる。) to move the sealing resin 7 surrounding the side wall of the semiconductor element 2 onto the film disk 8). Then, in this state, it is heated and cured.

かかる樹脂封止方式によれば、封止樹脂を半導体素子２
の周囲に滴下し、樹脂のない素子の上面に直接フィルム
ディスク８を貼付けるようにしたので、たとえば接着剤
層９が２０〜３０μｍとしても、従来のこの部分の樹脂
層１００μｍよりも薄くできる。さらにフィルムディス
ク８を半導体素子２の上面に直接貼付けるので、該ディ
スク８が非常に簿くても中央部がふくらむおそれかない
。したかって従来のディスク６の厚さは約１５０μｍで
あるのに対して、本発明方式では２０μｍ程度にするこ
とかでき、カード電卓等のより薄型を要求するものに対
しては、特に有用である。According to this resin encapsulation method, the encapsulation resin is attached to the semiconductor element 2.
Since the film disk 8 is applied directly to the upper surface of the element without resin, even if the adhesive layer 9 is 20 to 30 μm thick, it can be made thinner than the conventional resin layer of 100 μm in this area. Furthermore, since the film disk 8 is directly attached to the upper surface of the semiconductor element 2, there is no fear that the central portion will bulge even if the disk 8 is very thin. Therefore, while the conventional disk 6 has a thickness of about 150 μm, the method of the present invention can reduce the thickness to about 20 μm, which is particularly useful for devices that require thinner thickness, such as card calculators. .

〈効　果〉 以上の様に、本発明の樹脂封止方式は、半導体素子の側
壁を囲むように配線基板上に封止樹脂を設け、互生導体
素子の上面に直接フィルムディスクを接着して成るから
、半導体素子とフィルムディスクとの間から封止樹脂が
なくなり、フィルムディスク、接着剤の厚みも従来例の
ディスクの厚めよりもかなり薄くなったため、電子部品
の薄型化に大いに有用である。<Effects> As described above, the resin sealing method of the present invention is achieved by providing a sealing resin on a wiring board so as to surround the side walls of a semiconductor element, and bonding a film disk directly to the upper surface of an alternating conductor element. Therefore, there is no sealing resin between the semiconductor element and the film disk, and the thickness of the film disk and adhesive is considerably thinner than that of the conventional disk, which is very useful for making electronic parts thinner.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（イ）乃至に）は本発明方式を説明する図、第２
図（イ）乃至に）Ｇ」従来方式を説明する図である。 ４　浸透樹脂　５゛封止樹脂　６　ディスク７　やや高
粘度な封止樹脂Figures 1 (a) to 1) are diagrams explaining the method of the present invention;
Figures (A) to (G) are diagrams illustrating the conventional system. 4 Penetrating resin 5 Sealing resin 6 Disk 7 Slightly high viscosity sealing resin

Claims (1)

【特許請求の範囲】 １、回路パターンを有する配線基板上に、半導体素子を
載置し、前記半導体素子を樹脂で封止する半導体素子の
封止方式において、 前記半導体素子の側壁を囲むように配線基板上に封止樹
脂を設け、且前記半導体素子の上面に直接フィルムディ
スクを接着して成ることを特徴とする半導体素子の樹脂
封止方式。[Claims] 1. In a semiconductor device sealing method in which a semiconductor device is placed on a wiring board having a circuit pattern and the semiconductor device is sealed with a resin, the semiconductor device includes: a semiconductor device that surrounds a side wall of the semiconductor device; A resin sealing method for a semiconductor element, characterized in that a sealing resin is provided on a wiring board, and a film disk is directly adhered to the upper surface of the semiconductor element.
JP59124214A 1984-06-14 1984-06-14 Resin sealing system for semiconductor element Pending JPS612331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59124214A JPS612331A (en) 1984-06-14 1984-06-14 Resin sealing system for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59124214A JPS612331A (en) 1984-06-14 1984-06-14 Resin sealing system for semiconductor element

Publications (1)

Publication Number Publication Date
JPS612331A true JPS612331A (en) 1986-01-08

Family

ID=14879815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59124214A Pending JPS612331A (en) 1984-06-14 1984-06-14 Resin sealing system for semiconductor element

Country Status (1)

Country Link
JP (1) JPS612331A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999009592A1 (en) * 1997-08-13 1999-02-25 Citizen Watch Co., Ltd. Flip-chip semiconductor package and method for manufacturing the same
US6459152B1 (en) * 1999-10-27 2002-10-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a chip, reinforcing plate, and sealing material sharing a common rear surface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999009592A1 (en) * 1997-08-13 1999-02-25 Citizen Watch Co., Ltd. Flip-chip semiconductor package and method for manufacturing the same
US6459152B1 (en) * 1999-10-27 2002-10-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a chip, reinforcing plate, and sealing material sharing a common rear surface
US7094630B2 (en) 1999-10-27 2006-08-22 Renesas Technology Corp. Method of fabricating semiconductor device having a chip, reinforcing plate, and sealing material sharing a common rear surface

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