JPS61250904A - High dielectric ceramic composition and manufacture thereof - Google Patents

High dielectric ceramic composition and manufacture thereof

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Publication number
JPS61250904A
JPS61250904A JP60088827A JP8882785A JPS61250904A JP S61250904 A JPS61250904 A JP S61250904A JP 60088827 A JP60088827 A JP 60088827A JP 8882785 A JP8882785 A JP 8882785A JP S61250904 A JPS61250904 A JP S61250904A
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JP
Japan
Prior art keywords
dielectric constant
temperature
composition
high dielectric
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60088827A
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Japanese (ja)
Other versions
JPH0588486B2 (en
Inventor
修 古川
洋八 山下
光雄 原田
孝 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Priority to JP60088827A priority Critical patent/JPS61250904A/en
Publication of JPS61250904A publication Critical patent/JPS61250904A/en
Publication of JPH0588486B2 publication Critical patent/JPH0588486B2/ja
Granted legal-status Critical Current

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  • Inorganic Insulating Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は高誘電率磁器組成物およびその製造方法C;係
り、特C;、Pb(ZnHNbq)OBを主体とした広
範囲な温度領域6二わたって誘電率の温度変化の小さい
高誘電率磁器組成物およびその製造方法C−関する。
Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to a high dielectric constant ceramic composition and a method for producing the same. The present invention relates to a high dielectric constant ceramic composition having a small temperature change in dielectric constant and a method for manufacturing the same.

[発明の技術的背景とその問題点] 誘電体材料として要求される電気的特性としては、誘電
率、誘電率温度係数、誘電損失、誘電率バイアス電界依
存性、容量抵抗積等があけられる。
[Technical background of the invention and its problems] The electrical properties required of a dielectric material include dielectric constant, temperature coefficient of dielectric constant, dielectric loss, dependence of dielectric constant on electric field, capacitance-resistance product, etc.

特に容量抵抗積(OR値)は、十分高い値を取る必要が
あり、IZAJ(日本電子機械工業会)の電子機器用積
層磁器コンデンサ(チップm)規格RC−3698Bに
常温で500MΩ・71以上と規定されてい  ′る。
In particular, the capacitance-resistance product (OR value) needs to take a sufficiently high value; It is stipulated.

さら(;より厳しい条件でも使用できるよう(二、高温
(例えば米国防省規格M I L−C−55681Bで
は125℃でのCR値が定められている。)でも高い容
量抵抗積を維持することが要求される。
Furthermore, it must maintain a high capacitance-resistance product even at high temperatures (for example, the U.S. Department of Defense standard MIL-C-55681B stipulates a CR value of 125°C) so that it can be used under more severe conditions. is required.

また、特に広範囲な温度領域にわたって安定な温度特性
を要求される場合があり、たとえばFiIA(米国電子
工業会)規格のX7R特性C:は−55℃〜+125℃
の温度領域(二おける容量の変化が±154以内と規定
されている。
In addition, stable temperature characteristics may be required over a particularly wide range of temperature ranges, for example, FiIA (Electronic Industries Association) standard X7R characteristic C: -55°C to +125°C.
The change in capacitance in the temperature range (2) is specified to be within ±154.

さら1;積層タイプの素子を考えた場合、電極層と誘電
体層とは一体的Cユ焼成されるため、電極材料としては
lI誘電体材料焼成温度でも安定πものを用いる必要が
ある。従って誘電体材料の焼成温度が高い・とPt、 
Pd等の高価な材料を用いなければならず、Ag等の安
価な材料を使用できるようシー、1100℃以下程度の
低温での焼成が可能であることが要求される。
Furthermore, 1: When a multilayer type element is considered, since the electrode layer and the dielectric layer are integrally fired, it is necessary to use a stable π material even at the lI dielectric material firing temperature as the electrode material. Therefore, the firing temperature of the dielectric material is high.
It is necessary to use an expensive material such as Pd, and it is required to be able to fire at a low temperature of about 1100° C. or lower so that an inexpensive material such as Ag can be used.

従来から知られている高誘電率磁器組成物としてチタン
駿バリウムをペースとして、これC;錫酸塩、ジルコン
酸塩、チタン酸塩等を固溶したものがある。
As a conventionally known high dielectric constant ceramic composition, there is one in which a titanium-barium paste is used as a solid solution of stannate, zirconate, titanate, etc.

しかし、チタン酸バリウム系の材料の焼成温度は120
0−1400℃程度と高温であり、電極材料として必然
的C;白金、パラジウム等の高温で耐えうる高価な材料
を用いなければならず、コスト高の原因となる。
However, the firing temperature of barium titanate-based materials is 120
The temperature is as high as about 0 to 1400° C., and it is necessary to use an expensive material such as platinum or palladium that can withstand high temperatures as the electrode material, which causes high costs.

このチタン酸バリウム系の問題点を解消すべく、各種組
成物の研究がなされている。例えば、鉄・ニオブ酸鉛を
主体としたもの(特開昭57−57204号)、マグネ
シウム・ニオブ酸鉛を主体としたも4の(特開昭55−
51759号)、マグネシウム・タングステン酸鉛を主
体としたもの(特開昭55−144609号)、マグネ
シウム・鉄・タングステン酸鉛を主体としたもの(特開
昭513−217462号)等がある。
In order to solve the problems of barium titanate, various compositions have been studied. For example, the one mainly composed of iron and lead niobate (Japanese Patent Application Laid-Open No. 57-57204), and the one mainly composed of magnesium and lead niobate (Japanese Patent Application Laid-Open No. 55-1983).
51759), one mainly composed of magnesium/lead tungstate (Japanese Patent Application Laid-Open No. 144609/1982), and one mainly composed of magnesium/iron/lead tungstate (Japanese Patent Application Laid-Open No. 513-217462).

しかしながら誘電率が高く、その温度変化が例えば−5
5℃〜+125℃のような広い温度範囲C:わ九りて小
さく、かつ絶縁抵抗が高いというような電気的緒特性(
;優れ、かつ、低温焼結が可能であるという高誘電率磁
器組成物は得られていないのが現状である。
However, the dielectric constant is high, and the temperature change is -5
Wide temperature range C: 5°C to +125°C: Electrical characteristics such as extremely small temperature and high insulation resistance (
At present, a high dielectric constant ceramic composition that is excellent and can be sintered at low temperatures has not been obtained.

[発明の目的コ 本発明は以上の点を考慮してなされたもので、誘電率及
び絶縁抵抗が高く、かつ誘電率の温度変化が小さく、低
温で焼結することができる高誘電率磁器組成物及びその
展進方法を提供することを目的とする。
[Objective of the Invention] The present invention has been made in consideration of the above points, and provides a high-permittivity porcelain composition that has a high dielectric constant and insulation resistance, has a small temperature change in the dielectric constant, and can be sintered at low temperatures. The purpose is to provide products and their development methods.

[発明の概要コ 本発明は一般式 %式%] で表わし九とき 0.35≦X+7≦0,6 0.3  ≦ X ≦0.5 0.05≦ y ≦0.15 0.4  ≦ 2 ≦0.6 を満たすことを特徴とする高誘電率磁器組成物である。[Summary of the invention] The present invention is based on the general formula %formula%] Represented by nine o'clock 0.35≦X+7≦0,6 0.3 ≦X ≦0.5 0.05≦y≦0.15 0.4 ≦ 2 ≦0.6 This is a high dielectric constant ceramic composition that satisfies the following.

従来から誘電体材料として各種のペロプスカイト盤の磁
器材料が検討されているが、 Pb (ZnlqNbty、)OBは磁器とした場合、
ペロプスカイト構造を取りC;〈<、誘電体材料として
は適さないと考えられていた( NECRa5earc
h & Development No、 29人pr
il 1973 p、 15〜21参照)。しめ為しな
がら本発明者等の研究C二よれば、Pb(ZnHNbq
)06のPbサイトをBaま九は8rで適量置換するこ
とにより、磁器で安定なぺ曹プスカイト構造を形成でき
ることがわかった。さらに、この様な磁器組成物は、非
常に高い誘電率および絶、鰍抵抗を示し、かつ、その温
度特性本極めて良好であることがわかった。
Various types of perovskite ceramic materials have been studied as dielectric materials, but when Pb (ZnlqNbty,)OB is used as porcelain,
It has a perovskite structure and was thought to be unsuitable as a dielectric material (NECRa5earc
h & Development No. 29 people pr
il 1973 p. 15-21). According to research C2 conducted by the present inventors, Pb(ZnHNbq
) It was found that by replacing the Pb site of 06 with an appropriate amount of 8r, a stable peskite structure could be formed in porcelain. Furthermore, it has been found that such a porcelain composition exhibits a very high dielectric constant and an absolute resistance, and its temperature characteristics are extremely good.

以下C;本発明組成物の組成範囲(ユついて説明する。Below, C: The composition range of the composition of the present invention will be explained.

まずPbの置換元素B1及び8rであるが、少量の置換
でペロプスカイト構造を形成できるが、(x+y)が0
.35未満では広い温度範囲で誘電率の温度変化を小さ
くすることが困難である。また(x+y)が0.6を超
えてしまうと焼成温度が高くなってしまう。xeYにつ
いてはこの範囲をはずれると誘電率の温度変化が大きく
なってしまう。20.6を超えると焼成温度が高くなっ
てしまい、0.4未満では誘電率の温度変化が大きくな
ってしまう。
First, regarding Pb substitution elements B1 and 8r, a small amount of substitution can form a perovskite structure, but (x+y) is 0.
.. If it is less than 35, it is difficult to reduce the temperature change in dielectric constant over a wide temperature range. Moreover, if (x+y) exceeds 0.6, the firing temperature will become high. As for xeY, if it is out of this range, the temperature change in dielectric constant becomes large. If it exceeds 20.6, the firing temperature will become high, and if it is less than 0.4, the temperature change in dielectric constant will become large.

X、Yおよび2を上述の範囲−二限定した場合Cユ、誘
電率が大きく、かつ広範囲な温度領域(二わ九りて誘電
率の炭化が小さく、絶縁抵抗が高く、シかも1150℃
以下程度の低温で焼結できる磁器組成物が得られる。
If X, Y, and 2 are limited to the above ranges, then the dielectric constant is large and the temperature range is wide (the carbonization of the dielectric constant is small, the insulation resistance is high, and the temperature range is 1150°C).
A porcelain composition can be obtained which can be sintered at a low temperature of about 100%.

なお、本発明組成物は、” (Pbl−(x+y)Bax8’y)[(ZnHNbq
)1−、Ti、コ03を主体とするものであるが、多少
化学量論比がずれても構わない。この組成物を酸化物に
換算すると、 PbO32,14〜 49.94  wtチBaO15
,46=  28.34  wt %8rO1,74−
5,80wt$ ZnO4,01−s、91  wtl NblOs 13.10 − 19.32  wt %
Ties  10.74 〜17.88  wt%とな
る。
In addition, the composition of the present invention is composed of "(Pbl-(x+y)Bax8'y)[(ZnHNbq
)1-, Ti, and Co03, but the stoichiometric ratio may be slightly different. When this composition is converted into oxide, PbO32,14~49.94 wt BaO15
,46=28.34 wt%8rO1,74-
5,80wt$ ZnO4,01-s, 91 wtl NblOs 13.10 - 19.32 wt%
Ties is 10.74 to 17.88 wt%.

ま光、本発明の効果なiわない範囲での不純物。However, there may be impurities within a range that does not affect the effectiveness of the present invention.

添加物等の含有も構わない。例えば、La1OB、 M
n01゜Cod、 Nip、 Mg0.8b@OB、Z
rO2等の遷移金属、う7fi7ド元素があげられる。
It does not matter if additives or the like are included. For example, La1OB, M
n01゜Cod, Nip, Mg0.8b@OB, Z
Examples include transition metals such as rO2 and 7fi7 elements.

これらの添加物の含有量は、多くても1wtチ程度であ
る。
The content of these additives is about 1 wt at most.

本発明組成物は以下のとと<痙;製造される。The composition of the present invention is prepared as follows.

出発原料としてPb、 Ba、 8r、 Zn、 Nb
、 Tiの酸化物もしくは焼成ご−より酸化物になる炭
酸塩、しゆう酸塩等の塩類、水酸化物、有機化合物等を
所定の割合“で秤量し、十分混合した後C二仮焼する。
Pb, Ba, 8r, Zn, Nb as starting materials
Weigh Ti oxides or salts such as carbonates and oxalates, hydroxides, organic compounds, etc. that become oxides upon calcination in a predetermined ratio, thoroughly mix them, and then perform C second calcination. .

この仮焼は700℃〜850℃程度で行う。余り仮焼温
度が低いと焼結密度が低下し、また、余り高いと、やは
り焼結密度が低下し、絶縁抵抗が低下する。次いで仮焼
物を粉砕し原料粉氷な製造する。平均粒径は0.8〜2
μm程度が好ましく、余り大きいと焼結体中Cニポアー
が増加し、小さいと成型性が低下する。この様な原料粉
末を用い所望の形状(;成型した後、焼成すること(−
より、高誘電率のセ→ミックを得る。本発明の組成物を
用いることにより焼成は1150℃以下、1000−1
100℃程度と比較的低温で行うことができる。
This calcination is performed at about 700°C to 850°C. If the calcination temperature is too low, the sintered density will decrease, and if it is too high, the sintered density will also decrease and the insulation resistance will decrease. Next, the calcined product is crushed to produce raw powder ice. Average particle size is 0.8-2
The diameter is preferably about μm; if it is too large, carbon pores in the sintered body will increase, and if it is too small, the moldability will deteriorate. Using such raw material powder, it is molded into a desired shape (; and then fired (-).
A ceramic with a high dielectric constant is obtained. By using the composition of the present invention, firing can be performed at 1150°C or less, 1000-1
It can be carried out at a relatively low temperature of about 100°C.

° を光上述したような一般的方法(−代え、原料粉と
してBaT10B粉を少なくとも含む原料と、他の成分
とを混合して焼成しても良い。このような方法6;より
製造された高誘電率磁器組成物は、さらに誘電率の温度
変化幅が縮減される。
° The above-mentioned general method (-Alternatively, a raw material containing at least BaT10B powder as the raw material powder and other components may be mixed and fired. Such method 6; In the dielectric constant ceramic composition, the range of temperature change in dielectric constant is further reduced.

この製造方法は次のよう1−行なわれる。出発原料のう
ちBaTl0gを構成する成分であるBaおよびTiの
殿化物もしくは焼成C;より酸化物になる炭酸塩。
This manufacturing method is carried out as follows. A precipitate or calcined C of Ba and Ti, which are the components constituting 0g of BaT1 out of the starting materials; a carbonate that becomes more of an oxide.

しゆう酸塩等の塩類、水酸化物、有機化合物等を、予め
BaT10Bの化学式1;なるよう(ニ調製し1000
〜1350℃で仮焼する。この際、多少化学論比がずれ
てもかまわない。この仮焼粉と、他の出発原料とを所定
の割合で秤量し、十分混合粉砕する。なお。
Salts such as oxalates, hydroxides, organic compounds, etc. were prepared in advance so that the chemical formula 1 of BaT10B was obtained.
Calcinate at ~1350°C. At this time, it does not matter if the stoichiometric ratio deviates slightly. This calcined powder and other starting materials are weighed at a predetermined ratio and thoroughly mixed and pulverized. In addition.

この場合、他の出発原料(Ba、TIを含んでいても良
い)は別(;混合し700−850℃程度で仮焼してお
くことが望ましい。ま九BaT10gを構成する成分の
粉末−二少量の他の元素が含まれていても構わない。
In this case, other starting materials (which may contain Ba and TI) are preferably mixed and calcined at about 700-850°C. It does not matter if small amounts of other elements are included.

十分混合粉砕した粉末を用い所望の形状ζ二成型した後
、焼成することにより、高誘電率磁器組成物を得る。
A high dielectric constant ceramic composition is obtained by molding the sufficiently mixed and pulverized powder into a desired shape and then firing it.

積層タイプの素子を製造する場合は、前述の原料粉末ま
たは混合粉砕後の粉末C;バインダー、溶剤等を加えス
ラリー化して、グリーンシートを形成しこのグリーンシ
ート上に内部電極を印刷した後、所定の枚数を積層・圧
着し、焼成することζ;より製造する。この時、本発明
の誘電体材料は低温で焼゛結ができるため□、内部電極
材料として例えば°人g主体の安価な材°料を用いるこ
とができる。
When manufacturing a laminated type element, the raw material powder or the powder C after mixing and pulverization; add a binder, a solvent, etc. to form a slurry, form a green sheet, print internal electrodes on this green sheet, and then It is manufactured by laminating and pressing a number of sheets and firing them. At this time, since the dielectric material of the present invention can be sintered at low temperatures, it is possible to use, for example, an inexpensive material mainly made of carbon as the internal electrode material.

また、このようじ低温で焼成が可能であることから、回
路基板上等4:印刷・焼成する厚膜誇電体ペーストの材
料としても有効である。
Furthermore, since it can be fired at such a low temperature, it is also effective as a material for thick film hyperelectric paste to be printed and fired on circuit boards, etc.

この様な本発明磁器組成物は、高誘電率かつ、その温度
特性が良好である。また、CR値も大きく、特C:高−
でも十分な値を有し、高温での信頼性−;優れている。
Such a ceramic composition of the present invention has a high dielectric constant and good temperature characteristics. In addition, the CR value is large, and special C: high-
However, the reliability at high temperatures is excellent.

さら1;誘電率バイアス電界依存性も優れており、g 
KV/wmでも10%以下稿度の材料を得ることもでき
る。したがって、高圧用の材料として有効である。
Furthermore, the dielectric constant bias electric field dependence is excellent, and g
Even with KV/wm, it is possible to obtain materials with a draft quality of 10% or less. Therefore, it is effective as a material for high pressure.

ta誘電損失が小さく、交流用、高周波用として有効で
ある。
It has low dielectric loss and is effective for AC and high frequency applications.

さら1コ前述のごとく誘電率の温度特性(:優れている
ため、電歪素子へ応用した場合でも変位量の”温度変化
の小さい素子を得ることができる。
Furthermore, as mentioned above, the temperature characteristics of the dielectric constant are excellent, so even when applied to electrostrictive elements, it is possible to obtain elements with small temperature changes in displacement.

さらC二、焼成時のグレインサイズも1〜3μmと均一
化されるため耐圧性(;も優れている。
Furthermore, since the grain size during firing is made uniform to 1 to 3 μm, the pressure resistance is also excellent.

以上電気的特性Cユついて述べたが、機械的強度も十分
C:優れたものである。
The electrical properties C were described above, and the mechanical strength was also sufficient C: excellent.

[発明の効果コ 以上説明し次ようC:、本発#4(:よれば、高誘電率
でかつ温度特性、バイアス特性に優れ喪高誘電率磁器組
成物を得ることができる。41?ζユ、この様な各種特
性C二優れた磁器を低温焼成で得ることができるた・め
、積層セラミックコンデンサ、積層屋セラミック変位発
生素子等の積層タイプのセラミック素子への応用(−適
している。
[Effects of the invention] As explained above, according to the present invention #4 (:), it is possible to obtain a high dielectric constant porcelain composition which has a high dielectric constant and has excellent temperature characteristics and bias characteristics.41?ζ Since porcelain with such various characteristics can be obtained by firing at low temperatures, it is suitable for application to multilayer ceramic elements such as multilayer ceramic capacitors and multilayer ceramic displacement generating elements.

[発明の実施例コ 以下に本発明の詳細な説明する。[Embodiments of the invention] The present invention will be explained in detail below.

(実施例1〜5) 出発原料としてPb、 Ba、 8r、 Zn、 Nb
、 Tiの酸化物等の出発原料をボールミル等で混合し
、7oO〜850℃で仮焼する。次いでこの仮焼体をボ
ールミル等で粉砕し乾燥の後、バインダーを加え造粒し
、プレスして直径17M、厚さ約2閣の円板状素体を形
成し九。混合、粉砕用のボールは、不純物の混入を防止
するため、部分安定化ジルコニアボール等の硬度が大き
く、かつ靭性の高いボールを用いることが好ましい。
(Examples 1 to 5) Pb, Ba, 8r, Zn, Nb as starting materials
, Starting materials such as Ti oxide are mixed in a ball mill or the like, and calcined at 70°C to 850°C. Next, this calcined body was crushed with a ball mill or the like, and after drying, a binder was added and granulated, and pressed to form a disc-shaped body with a diameter of 17M and a thickness of about 2 mm. As balls for mixing and grinding, it is preferable to use balls with high hardness and high toughness, such as partially stabilized zirconia balls, in order to prevent contamination of impurities.

この素体を空気中1000−1100℃、2時間の条件
で焼結し、両主面(:銀電極を焼付は各特性を測定した
。誘電損失、容量は、l kHz 、 l V rms
、25℃の条件でのデジタルLCRメーターによる測定
値であり、この値から誘電率を算出し九。また、絶縁抵
抗は、Zoo Vの電圧を2分間印加した後、絶縁抵抗
計を用いて測定した値から算出し念。なお、誘電率の温
度特性は、25℃の値を基準とし、−55℃〜+125
℃の温度範囲C;訃ける変化幅の最大値と最小値で表わ
した。容量抵抗積は、25℃および125℃での(誘電
率)×(絶縁抵抗)×(真空の誘電率)から求めた。絶
縁抵抗の測定は、空気中の湿気の効果を除く九めシリコ
ーンオイル中で行っ九。
This element body was sintered in air at 1000-1100°C for 2 hours, and the characteristics of both main surfaces (silver electrodes were sintered) were measured. The dielectric loss and capacity were 1 kHz, 1 V rms.
This is the value measured by a digital LCR meter at 25°C, and the dielectric constant is calculated from this value. In addition, the insulation resistance was calculated from the value measured using an insulation resistance meter after applying Zoo V voltage for 2 minutes. Note that the temperature characteristics of the dielectric constant are based on the value of 25°C, and range from -55°C to +125°C.
Temperature range C in °C: Expressed by the maximum and minimum values of the range of change. The capacitance-resistance product was determined from (permittivity) x (insulation resistance) x (vacuum permittivity) at 25°C and 125°C. Insulation resistance measurements were performed in silicone oil to exclude the effects of atmospheric moisture.

その結果を第1表C二示す。The results are shown in Table 1.

参考例は、本発明組成の範囲外の4のである。Reference example 4 is outside the scope of the composition of the present invention.

(実施例6〜7) 出発原料のうちBaT10Bを構成する成分であるBa
およびTiの酸化物、もしくは焼成(二より酸化物C;
なる炭酸塩、しゆう酸塩等の塩類、水酸化物。
(Examples 6-7) Among the starting materials, Ba is a component constituting BaT10B.
and Ti oxide or calcined (di-oxide C;
Salts such as carbonates and oxalates, and hydroxides.

有機化合物等を、予めBaTl0Bの化学式になるよう
C:秤徹し、ボールミル等で混合し、1000〜135
0℃で仮焼する。一方、それ以外のPb、 8r、 Z
n、 Nbなどの酸化物、もしくは焼成Cユより酸化物
C:なる炭酸塩、しゆう酸塩等の塩類、水酸化物、有機
化合物等を別1:ボールミル1等で混合し、700〜8
50℃で仮焼す・る。次いでこれらの仮焼体を所定の割
合g:なるようC−秤量し、十分、混合粉砕する。実施
例1〜5と同様C;試料を作成し、その結果を第1表(
:示す。
Organic compounds, etc. are weighed in advance so that the chemical formula is BaTl0B, and mixed using a ball mill etc.
Calculate at 0℃. On the other hand, other Pb, 8r, Z
Mix oxides such as n, Nb, or oxides C: salts such as carbonates and oxalates, hydroxides, organic compounds, etc. in a ball mill 1 etc. to 700 to 8
Calculate at 50℃. Next, these calcined bodies are weighed so as to have a predetermined ratio of g:C, and thoroughly mixed and ground. Similar to Examples 1 to 5, samples were prepared and the results are shown in Table 1 (
:show.

以下余白 第1表から明らかなようC;、本発明磁器組成物(実施
例1〜5)は、高誘電率(K= 3000以上)かつ、
温度特性が良好(−55〜+125℃で±15%以内)
である。CR値も4000Ω・μP(25℃)以上と大
キく、特C;、125℃で4.100100O/P以上
であり、高温での信頼性C:優れている。
As is clear from Table 1 below, the ceramic compositions of the present invention (Examples 1 to 5) have a high dielectric constant (K = 3000 or more) and
Good temperature characteristics (within ±15% at -55 to +125℃)
It is. The CR value is also large, at 4000 Ω·μP (at 25°C) or higher, and is 4.100100 O/P or higher at 125°C, and the reliability at high temperatures is excellent.

さら(nil電車バイアス電界依存性4bIKV/■で
15チ以内と優れている。また誘電損失が25℃、1k
Hzで2.0%以下と小さい。
Furthermore, it has an excellent (nil electric bias electric field dependence of 4bIKV/■ within 15cm).Also, the dielectric loss is 1k at 25℃.
It is small at 2.0% or less in Hz.

参考例は8r成分を含まないものであるが、容量抵抗積
が小さく、誘電率の変化幅も大きくなってしまう。また
、参考例2はSr成分を所定量含んでいるが、Bsおよ
びTIの量が少ないためC二、誘電率の変化幅が大きく
なってしまっている。
Although the reference example does not contain the 8r component, the capacitance-resistance product is small and the range of change in dielectric constant is large. Further, although Reference Example 2 contains a predetermined amount of Sr component, the amount of Bs and TI is small, so that the range of change in dielectric constant becomes large.

露1図C:誘電率の温度特性を示す。比較のため、(B
aTiOs)o、oys−(NbsOs)o、ol?−
(TasOa)o、ooa −(NdsOs)o、oo
sのチタン酸バリウム系の材料の特性を合せて示した(
参考例3)。参考例3は誘電率の温度変化幅が一55℃
〜+125℃で±15チ以内6二人っており良好である
が、25℃での誘電率は2000程度であり小さい。ま
た、参考例3の焼成温度は1200〜1220℃であり
比較的高い。
Dew 1 Figure C: Shows the temperature characteristics of dielectric constant. For comparison, (B
aTiOs) o, oys-(NbsOs) o, ol? −
(TasOa) o, ooa - (NdsOs) o, oo
The characteristics of barium titanate-based materials of s are also shown (
Reference example 3). Reference example 3 has a temperature change range of dielectric constant of 155°C.
The dielectric constant is within ±15 inches at ~+125°C, which is good, but the dielectric constant at 25°C is about 2000, which is small. Further, the firing temperature of Reference Example 3 is 1200 to 1220°C, which is relatively high.

これ(一対し、本発明では、誘電率の温度変化の幅は一
り5℃〜’+125℃で±15%以内であり、しかも2
5℃での誘電率が4000と大きい(実施例3)。
(On the other hand, in the present invention, the range of temperature change in dielectric constant is within ±15% from 5°C to +125°C, and 2
The dielectric constant at 5°C is as high as 4000 (Example 3).

また第1表から明らかなよう礪:、本発明磁器組成物の
製造方法を用いるとと―よって誘電率の変  □化−は
縮少され、かつ、他の特性は変わらないことがわかる。
Furthermore, as is clear from Table 1, when the method for producing the ceramic composition of the present invention is used, the change in dielectric constant is reduced, while other properties remain unchanged.

第2図は直流バイアス電界依存性を示す図である。一般
ζ;誘電率はバイアス電界が高くなるC;つれ低下する
傾向があり、この傾向は誘電率が高いほど顕著C二なる
。参考例3は誘電率が2000程度である、が、l K
V/mで−7、2KV/m テ20% J−非常−ユ大
きな低下の傾向を示している。これ−;対し実  ;施
例3は誘電率が4000と大きいC二もかかわらず、 
 □2 KV/waでも一10’j程度C1flj[’
ナイ。
FIG. 2 is a diagram showing the DC bias electric field dependence. In general, the dielectric constant tends to decrease as the bias electric field increases, and this tendency becomes more pronounced as the dielectric constant increases. Reference example 3 has a dielectric constant of about 2000, but l K
-7 in V/m, 2KV/m TE 20% J-Very shows a large decreasing trend. In contrast, in Example 3, despite C2 having a large dielectric constant of 4000,
□2 KV/wa is about 10'j C1flj['
No.

このように直流バイアス電界依存性の小さい本発明組成
物は高圧用のコンデンサ材料として有効である。ま九、
積層コンデンサを考えた場合、同−形状で大容量化を考
えた場合、誘電体層一層当念りの厚みを薄くする必要が
あるが、この場合、−膚あたりの印加電界が高くなるこ
と(二なる。しかしながら本発明の組成物はバイアス特
性番;優れているため、この様な素子C;応用した場合
でも特性を劣化することがない。
As described above, the composition of the present invention having a small dependence on a DC bias electric field is effective as a material for a high-voltage capacitor. Maku,
When considering a multilayer capacitor, in order to increase the capacitance with the same shape, it is necessary to make the dielectric layer even thinner, but in this case, the electric field applied to the skin becomes higher ( However, since the composition of the present invention has excellent bias characteristics, the characteristics do not deteriorate even when applied to such devices.

第3図(二OR値の温度特性を示す。本発明の場合は、
高温においてもCR値の低下は僅かであり、実施例6で
2100MΩ・μF (125℃)、実施例7で380
0MΩ・μF(125℃)と非常(:高い値を示し、信
頼性感;優れている。これC:対し参考例3は、常温で
4000 MΩ・μF#!4度と高い値を示しているが
、125℃では100MΩ・μFと極端Cユ低下してし
まう。
Figure 3 (shows the temperature characteristics of two OR values. In the case of the present invention,
Even at high temperatures, the CR value decreased slightly, with Example 6 at 2100 MΩ・μF (125°C) and Example 7 at 380
It shows a very high value of 0MΩ・μF (125℃), and the reliability is excellent.In contrast, Reference Example 3 shows a high value of 4000MΩ・μF#!4 degrees at room temperature. , at 125° C., the C value drops to 100 MΩ·μF.

第4図は実施例6のX線ディフラクションパターン図で
あるが、はぼ完全なペロプスカイト相となっている。従
って、誘電率が3900.OR値5400MΩ・μF(
25℃)、  2100MΩ・μF (125℃)と優
れた値を示している。
FIG. 4 is an X-ray diffraction pattern diagram of Example 6, which shows a nearly perfect perovskite phase. Therefore, the dielectric constant is 3900. OR value 5400MΩ・μF (
(25℃) and 2100MΩ・μF (125℃).

次いで実施例64二さらζユQJ5mo1%のMnOお
よびCoOを添加含有したものを用いて積層セラミック
コンデンサを作成し九実施例を説明する。まず、この様
な組成を有するBaT10B及びその他の焙焼粉をよく
混合して有機溶剤を加えてスラリー化し友後ドクタープ
レイド屋キャスターを用いて30μmのグリーンシート
を作成した。このグリーンシート上(ユ80Aji/2
0Pdの電極ペーストを所定のパターンで印刷し、この
様な電極パターンを有するシートを20層積層圧着した
。その後、所定の形状1ユ切断し、脱脂を行い1080
℃、2Hの条件で焼成を行った。焼結後、外部電極とし
てλgペーストを焼付け、積層セラミックコンデンサを
製造し九。その電気的特性を第2表に示す。
Next, a multilayer ceramic capacitor was prepared using Example 64, which contained 5 mo1% of MnO and CoO, and nine examples will be described. First, BaT10B having such a composition and other roasted powders were thoroughly mixed, an organic solvent was added to form a slurry, and a 30 μm green sheet was created using a Tomago Dr. Plaid caster. On this green sheet (Yu80Aji/2
0Pd electrode paste was printed in a predetermined pattern, and 20 sheets having such an electrode pattern were laminated and pressure-bonded. After that, it is cut into a predetermined shape and degreased to a 1080mm
Firing was carried out under the conditions of ℃ and 2 hours. After sintering, λg paste is baked as an external electrode to produce a multilayer ceramic capacitor. Its electrical characteristics are shown in Table 2.

以下余白 第2表 得られた積層セラミックコンデンサの誘電率は約400
0であり、また、第2表C:示し念ごとく各特性が十分
C二優れていることが分る。特に温度特性は一55℃〜
+125℃で±151以内であり、EI人のX7R%性
を満足するものである。
The dielectric constant of the obtained multilayer ceramic capacitor is approximately 400.
0, and Table 2 C: It can be seen that each characteristic is sufficiently excellent as C2 as a reminder. In particular, the temperature characteristics are -55℃~
It is within ±151 at +125°C, which satisfies the X7R% of EI people.

このよう櫂;、本発明4−よる高誘電率磁器組成物およ
びその製造方法は、誘電率が大きく、かつ広範囲な温度
領域(:わ九って誘電率の変化が小さいなど各種特性ζ
ユ優れた高誘電率磁器組成物を提供することができるの
で、特C:積層セラミックコンデンサ用の材料および製
法として有効である。また、本発明の製造方法舊;おい
ては亜鉛ニオブ酸鉛およびチタン酸バリウムを主体とし
念ものを用いたが、他の成分でこれら(:替わるものを
用いても本発明と同様の効果がiられる場合がある。
The high dielectric constant ceramic composition and the manufacturing method thereof according to the present invention 4 have various characteristics such as a large dielectric constant and a wide temperature range (:
Since it is possible to provide an excellent high dielectric constant ceramic composition, it is effective as a material and manufacturing method for Special C: Multilayer Ceramic Capacitors. In addition, in the production method of the present invention, a compound mainly containing zinc lead niobate and barium titanate was used, but the same effects as the present invention can be obtained even if other ingredients are used in place of these. i may be affected.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は誘電率の温度特性曲線図、第2図は誘電率の直
流バイアス電界特性曲線図、第3図は絶縁抵抗容量棟の
温度特性曲線図、第4図は本発明に係る組成物のX線デ
ィフラクションパターン図。 代理人弁理士 則 近 憲 佑(ほか1名)□温IX(
#C) 第1図 直流ベイアス電1(((η僧筑) 第2図 温A C’C) 第3図 Oベロジスカイト横這 QtKに 2θ(d91) 第4図
Figure 1 is a diagram of the temperature characteristic curve of dielectric constant, Figure 2 is a diagram of the DC bias electric field characteristic curve of dielectric constant, Figure 3 is a diagram of the temperature characteristic curve of insulation resistance capacity building, and Figure 4 is a diagram of the composition according to the present invention. X-ray diffraction pattern diagram. Representative Patent Attorney Kensuke Nori Chika (and 1 other person) □ On IX (
#C) Fig. 1 DC Beias electric current 1 (((η Sochiku) Fig. 2 Temperature A C'C) Fig. 3 O Berodskite flat QtK 2θ (d91) Fig. 4

Claims (1)

【特許請求の範囲】 (1)一般式 (Pb_1_−_x_−_yBa_xSr_y)[(Z
n_1_/_8Nb_2_/_8)_1_−_zTi_
z]O_8で表わしたとき、 0.35≦x+y≦0.6 0.3≦x≦0.5 0.05≦y≦0.15 0.4≦z≦0.6 を満たすことを特徴とする高誘電率磁器組成物。 (2)一般式 (Pb_1_−_x_−_yBa_xSr_y)[(Z
n_1_/_8Nb_2_/_8)_1_−_zTi_
z]O_8で表わしたとき、 0.35≦x+y≦0.6 0.3≦x≦0.5 0.05≦y≦0.15 0.4≦z≦0.6 の組成を有する高誘電率磁器組成物を製造する原料とし
て少なくともBaTiO_8粉を用いることを特徴とす
る高誘電率磁器組成物の製造方法。
[Claims] (1) General formula (Pb_1_−_x_−_yBa_xSr_y) [(Z
n_1_/_8Nb_2_/_8)_1_-_zTi_
z]O_8, it is characterized by satisfying the following: 0.35≦x+y≦0.6 0.3≦x≦0.5 0.05≦y≦0.15 0.4≦z≦0.6 High dielectric constant porcelain composition. (2) General formula (Pb_1_−_x_−_yBa_xSr_y) [(Z
n_1_/_8Nb_2_/_8)_1_-_zTi_
z] When expressed as O_8, a high dielectric material having a composition of 0.35≦x+y≦0.6 0.3≦x≦0.5 0.05≦y≦0.15 0.4≦z≦0.6 A method for producing a high dielectric constant ceramic composition, characterized in that at least BaTiO_8 powder is used as a raw material for producing the high dielectric constant ceramic composition.
JP60088827A 1985-04-26 1985-04-26 High dielectric ceramic composition and manufacture thereof Granted JPS61250904A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60088827A JPS61250904A (en) 1985-04-26 1985-04-26 High dielectric ceramic composition and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60088827A JPS61250904A (en) 1985-04-26 1985-04-26 High dielectric ceramic composition and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS61250904A true JPS61250904A (en) 1986-11-08
JPH0588486B2 JPH0588486B2 (en) 1993-12-22

Family

ID=13953765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60088827A Granted JPS61250904A (en) 1985-04-26 1985-04-26 High dielectric ceramic composition and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS61250904A (en)

Also Published As

Publication number Publication date
JPH0588486B2 (en) 1993-12-22

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