JPS61255848A - Dielectric polyamide molded shape and manufacture thereof - Google Patents
Dielectric polyamide molded shape and manufacture thereofInfo
- Publication number
- JPS61255848A JPS61255848A JP60098298A JP9829885A JPS61255848A JP S61255848 A JPS61255848 A JP S61255848A JP 60098298 A JP60098298 A JP 60098298A JP 9829885 A JP9829885 A JP 9829885A JP S61255848 A JPS61255848 A JP S61255848A
- Authority
- JP
- Japan
- Prior art keywords
- polyamide molded
- film
- polyamide
- conductive
- molded article
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004952 Polyamide Substances 0.000 title claims description 39
- 229920002647 polyamide Polymers 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000011282 treatment Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- AQMRBJNRFUQADD-UHFFFAOYSA-N copper(I) sulfide Chemical compound [S-2].[Cu+].[Cu+] AQMRBJNRFUQADD-UHFFFAOYSA-N 0.000 claims description 19
- 125000003368 amide group Chemical group 0.000 claims description 12
- 230000004913 activation Effects 0.000 claims description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052717 sulfur Inorganic materials 0.000 claims description 9
- 239000011593 sulfur Substances 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 8
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 5
- 229910001431 copper ion Inorganic materials 0.000 claims description 5
- 150000002366 halogen compounds Chemical class 0.000 claims description 3
- -1 phenol compound Chemical class 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 description 40
- 239000000243 solution Substances 0.000 description 15
- 229910000831 Steel Inorganic materials 0.000 description 11
- 239000010959 steel Substances 0.000 description 11
- 238000001994 activation Methods 0.000 description 10
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229920002292 Nylon 6 Polymers 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- 150000002825 nitriles Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 3
- 235000019345 sodium thiosulphate Nutrition 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 2
- 125000000349 (Z)-3-carboxyprop-2-enoyl group Chemical group O=C([*])/C([H])=C([H])\C(O[H])=O 0.000 description 1
- LMYZQUNLYGJIHI-SPONXPENSA-N 4alpha-methyl-5alpha-cholest-7-en-3beta-ol Chemical compound C[C@@H]1[C@@H](O)CC[C@]2(C)[C@@H](CC[C@@]3([C@@H]([C@H](C)CCCC(C)C)CC[C@H]33)C)C3=CC[C@H]21 LMYZQUNLYGJIHI-SPONXPENSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LMYZQUNLYGJIHI-UHFFFAOYSA-N Methostenol Natural products CC1C(O)CCC2(C)C(CCC3(C(C(C)CCCC(C)C)CCC33)C)C3=CCC21 LMYZQUNLYGJIHI-UHFFFAOYSA-N 0.000 description 1
- 241000566369 Palthis Species 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 229940076286 cupric acetate Drugs 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- DPLVEEXVKBWGHE-UHFFFAOYSA-N potassium sulfide Chemical compound [S-2].[K+].[K+] DPLVEEXVKBWGHE-UHFFFAOYSA-N 0.000 description 1
- BHZRJJOHZFYXTO-UHFFFAOYSA-L potassium sulfite Chemical compound [K+].[K+].[O-]S([O-])=O BHZRJJOHZFYXTO-UHFFFAOYSA-L 0.000 description 1
- 235000019252 potassium sulphite Nutrition 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OMDXFCRSKHYDTM-UHFFFAOYSA-J thorium(4+);tetrabromide Chemical compound Br[Th](Br)(Br)Br OMDXFCRSKHYDTM-UHFFFAOYSA-J 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- Conductive Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
技術分計
本発明は、新規な導電性ポリアミド成形物及びその製造
法に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Summary The present invention relates to a novel conductive polyamide molded article and a method for producing the same.
発明・の背景
ポリアミド成形物への導電性の付与は、従来から主に無
電解メツ生性により行なわれている。しかしながら1無
電解メツ生性には、脱脂処理、化学エツチング処理、感
受性化処理、活性化処理、無電解メツ+処理と多数の処
理工程を必要とし極めて煩雑であるという大きな欠点が
あるのに加えて、得られる金属被膜の密着性が劣るとい
う欠点がある。これらの欠点の内後者については、前処
理の工夫(特開昭56−161今32号)、ポリアミド
へのシリカの配合(特開昭57−158236号)等に
よシ改善し得ることが開示され九が、前者については何
ら改善されるに至りていない。Background of the Invention Conventionally, electroconductivity has been imparted to polyamide molded articles mainly through electroless metal forming. However, 1. Electroless metal forming has the major drawback that it is extremely complicated and requires a large number of processing steps including degreasing, chemical etching, sensitization, activation, and electroless metal + treatment. However, there is a drawback that the adhesion of the resulting metal film is poor. It has been disclosed that the latter of these drawbacks can be improved by devising pretreatment (Japanese Patent Application Laid-Open No. 161-1982, No. 32), blending silica into polyamide (Japanese Patent Application Laid-Open No. 158-236-1987), etc. However, no improvement has been made regarding the former.
一方、ポリアクリ0ニトリル等のニトリル系樹脂のシア
ノ基へ1価の銅塩を配位させることによシ導電性を付与
し得ることが開示されている(特開昭56−11290
9号、特開昭58−45263号)。On the other hand, it has been disclosed that conductivity can be imparted by coordinating a monovalent copper salt to the cyano group of a nitrile resin such as polyacrylic nitrile (Japanese Unexamined Patent Publication No. 56-11290
No. 9, Japanese Patent Publication No. 58-45263).
本発明者は、前記無電解メツ+法の欠点を解消し、ポリ
アミド成形物に密着性に優れた導電性被膜を簡便な方法
で形成することを目的として研究し、上記ニトリル系樹
脂における方法を試みた所ポリアミドには1価の銅塩は
配位されずこの方法、 は適用そきないことが判
った。本発明者は、上記目的達成のため、その後更に鋭
意研究を続けた。The present inventor conducted research with the aim of eliminating the drawbacks of the electroless Met+ method and forming a conductive film with excellent adhesion on polyamide molded products by a simple method, and developed the method using the above-mentioned nitrile resin. When tried, it was found that the monovalent copper salt was not coordinated to polyamide, and this method was not applicable. In order to achieve the above object, the inventor continued further intensive research.
その結果、ポリアミド成形物にアミド基の活性化処理を
施した後2価の鋼イオンを配位させ、これを含硫黄還元
剤で1価に還元することによシ、目的が達成でき新規な
導電性ボリアニド成形物を収得できることを見出した。As a result, the purpose was achieved by coordinating divalent steel ions after activating the amide group on the polyamide molded product, and reducing it to monovalent steel ions with a sulfur-containing reducing agent. It has been found that conductive polyanide molded products can be obtained.
本発明は、上記知見に基づいて完成されたものである。The present invention was completed based on the above findings.
本発明は、ポリアミド成形物の表面に硫化第1銅被膜が
密着形成されていることを特徴とする導電性ポリアミド
成形物、及び
アミド基の活性化処理を施したポリアミド成形物を2価
の銅イオン溶液で処理し、次いで含硫黄還元剤と接触さ
せて銅イオンを1価に還元してポリアミド成形物の表面
に硫化第1銅被膜を密着形成せしめることを特徴とする
導電性ポリアミド成形物の製造法に係る。The present invention relates to a conductive polyamide molded product characterized in that a cuprous sulfide coating is closely formed on the surface of the polyamide molded product, and a polyamide molded product subjected to an activation treatment for amide groups to be made of divalent copper. A conductive polyamide molded article characterized by being treated with an ionic solution and then brought into contact with a sulfur-containing reducing agent to reduce copper ions to a monovalent one to form a cuprous sulfide coating on the surface of the polyamide molded article. Pertains to manufacturing method.
本発明の導電性ポリアミド成形物は、ポリアミド成形物
の表面に硫化第1銅被膜が密着形成されている本のであ
る。本発明における硫化第1銅被膜の厚さは、特に限定
されないが、通常0.OI〜50μ解程度である。硫化
第1銅被膜は、極めて優れた密着性を有しておシ、又耐
寒性、耐熱性にも優れている。また、硫化第1銅被膜は
、ポリアミド成形物表面を均一に被覆しているので導電
性が非常に安定している。The conductive polyamide molded article of the present invention is one in which a cuprous sulfide coating is closely formed on the surface of the polyamide molded article. The thickness of the cuprous sulfide coating in the present invention is not particularly limited, but is usually 0. OI ~ 50μ solution. The cuprous sulfide coating has extremely excellent adhesion and is also excellent in cold resistance and heat resistance. Furthermore, since the cuprous sulfide coating uniformly covers the surface of the polyamide molded product, its conductivity is extremely stable.
本発明の導電性ポリアミド成形物は、例えば以下の如く
して製造される。The conductive polyamide molded article of the present invention is manufactured, for example, as follows.
本発明におけるポリアミド成形物は、例えばポリアミド
−6Sポリアミド−6,6、ポリアミド−6,10、ポ
リアミド−11,ポリアミドー12等のアミド基を有す
るポリマーのフィルム、繊維、布、或いは直方体、筒状
、球状等の各種形状の成形体等である。また、該成形物
は、ボリアニド以外の樹脂とポリアミドとの多層構造に
なっているもの又はこれらの混合物からなるものであっ
ても良い。The polyamide molded article in the present invention is, for example, a film, fiber, cloth, rectangular parallelepiped, cylindrical, These are molded bodies of various shapes such as spherical shapes. Further, the molded product may have a multilayer structure of a resin other than borianide and polyamide, or a mixture thereof.
最初にポリアミド成形物に、アミド基の活性化処理を施
す。この活性化処理・は、アミド基間に存在する強固な
水素結合を弱めて2価の鋼イオンが配位できる様にする
ものである。この活性化処理は、アミド基間に入シ込む
性質を有するヨウ素、臭素等のへ〇ゲン1ヨウ化カリウ
ム、ヨウ化ナトリウム、ヨウ化リチウム、臭化カリウム
1臭化すトリウム、臭化リチウム等のハロゲン化合物、
及り00フエノール)メック00フエノール、バラク0
ロフエノール1牛シレノール等のフェノール化合物の少
なくとも1種を用いて行なうのが好ましい。これらの内
特に好ましいのは、へ〇グンとハロゲン化合物の併用又
はフェノール化合物である。また、この活性化処理は、
上記へ〇ゲ:ISハ0ゲン化合物及びフェノール化合物
の少なくとも1種の水溶液にポリアミド成形物を浸漬す
ることKよシ行なうのが好ましい。この際の水溶液の濃
度は、用いた薬剤の種類に応じて種々変動し一定しない
が、−例を挙げるとヨウ素とヨウ化カリウムの混合水溶
液を用いる場合は、それぞれを通常0、002〜Q、5
w*a14程度の濃度とするのが適当である。また、
メタフレリールの場合は、通常0、005〜Q、5 v
tal / J程麿の濃度とするのが適当である。処理
温度は、特に限定されないが、通常5〜50℃程度とす
るのが適当である。また、処理時間も種々変動し一定し
ないが、上記の場合は通常1秒〜10時間程度とするの
が適当である。First, a polyamide molded article is subjected to an amide group activation treatment. This activation treatment weakens the strong hydrogen bonds existing between amide groups and allows divalent steel ions to coordinate. This activation treatment involves the following: 1. Potassium iodide, sodium iodide, lithium iodide, potassium bromide, 1. thorium bromide, lithium bromide, etc. halogen compounds,
and 00 phenol) MEC 00 phenol, Barak 0
Preferably, at least one phenolic compound such as lophenol and bovine sirenol is used. Particularly preferred among these are a combination of halogen and a halogen compound, or a phenol compound. In addition, this activation process
To the above, it is preferable to immerse the polyamide molded article in an aqueous solution of at least one of an IS halide compound and a phenolic compound. The concentration of the aqueous solution at this time varies depending on the type of drug used and is not constant. 5
It is appropriate to set the concentration to about w*a14. Also,
In the case of Metafreel, usually 0,005~Q,5v
It is appropriate to set the concentration to tal/J. Although the treatment temperature is not particularly limited, it is usually appropriate to set it at about 5 to 50°C. Further, the processing time also varies and is not constant, but in the above case, it is usually appropriate to set it to about 1 second to 10 hours.
アミド基の活性化処理を行なわない場合は、2価の銅イ
オンの配位が起こらないので、硫化第1鋼被膜は形成さ
れない。従って、この活性化処理の際に、ポリアミド成
形物の一部を処理溶液に浸漬したシ又は一部をマス牛ン
グしておい友シして、ポリアミド成形物の任意の部分に
活性化処理を行なうことによシ、所望の部分のみに硫化
第1銅被膜を形成することが容易にできる。例えばフィ
ルムの片面にのみ硫化第1銅被膜を形成したシ、成形体
の導電化を必要とする面のみに該被膜を形成したシする
ことが容易にできる。If the amide group is not activated, coordination of divalent copper ions does not occur, so a sulfided No. 1 steel coating is not formed. Therefore, during this activation treatment, a part of the polyamide molded product is dipped in a treatment solution or a part of the polyamide molded product is immersed in a mass. By doing so, it is possible to easily form a cuprous sulfide coating only on desired portions. For example, it is easy to form a cuprous sulfide coating only on one side of the film, or to form the coating only on the side of the molded body that requires conductivity.
尚、アミド基の活性化処理に先立って、必要ならば、通
常の脱脂処理を行なっても良い。Incidentally, prior to the activation treatment of the amide group, if necessary, a conventional degreasing treatment may be performed.
次に1上記活性化処理を施したポリアミド成形物を2価
の鋼イオン溶液で処理し、次いで含硫黄還元剤と接触処
理する◇
2価の鋼イオン溶液による処理は、特に限定されないが
、例えば硝酸第2銅、硫酸第2銅、酢酸第2銅、塩化第
2銅等の第2#4塩の通常0.O1〜l Q pal
/ l程度好ましくはO,1〜5 mol / lの水
溶液に、5〜50℃程度の温度下で、1秒〜5時間程度
好ましくは2分〜1時間浸漬することによシ行なうのが
良い。Next, 1. The polyamide molded product subjected to the above activation treatment is treated with a divalent steel ion solution, and then contacted with a sulfur-containing reducing agent.◇ The treatment with the divalent steel ion solution is not particularly limited, but for example, Normally 0.2 #4 salts such as cupric nitrate, cupric sulfate, cupric acetate, cupric chloride, etc. O1~l Q pal
This is preferably carried out by immersion in an aqueous solution of about 1 to 5 mol/l of O, preferably 1 to 5 mol/l, at a temperature of about 5 to 50°C for about 1 second to 5 hours, preferably 2 minutes to 1 hour. .
含硫黄還元剤による接触処理は、特に限定されないが、
例えばチオ硫酸ナトリウム、亜硫酸ナトリウム、硫化ナ
トリウム、チオ硫酸カリウム、亜硫酸カリウム・硫化カ
リウム等の含硫黄還元剤の通常0.01〜IO#1σl
/ l程度好ましくは0.1〜5 mar / ll
の水溶液に、IO〜100℃程度好ましくは40〜80
℃の温度下で、lO分〜1週間程度好ましくは1〜24
時間浸漬することによシ行なうのが良い。Contact treatment with a sulfur-containing reducing agent is not particularly limited, but
For example, sulfur-containing reducing agents such as sodium thiosulfate, sodium sulfite, sodium sulfide, potassium thiosulfate, potassium sulfite/potassium sulfide, etc. are usually 0.01 to IO#1σl.
/ l, preferably 0.1 to 5 mar/ll
to an aqueous solution of IO to 100°C, preferably 40 to 80°C.
at a temperature of 10 minutes to 1 week, preferably 1 to 24
It is best to do this by soaking for a period of time.
2価の銅イオン溶液による処理と含硫黄還元剤による接
触処理とは、それぞれ別の容器を用いて行なっても良い
が、前者の処理終了後の処理溶液を特に除去することな
く、その容器に後者の処理溶液を更に加えて連続的に後
者の処理を行なうのがより好適である。これらの処理は
、適宜攪拌又は振とうして行なうのが適当である。The treatment with a divalent copper ion solution and the contact treatment with a sulfur-containing reducing agent may be carried out using separate containers, but the treatment solution after the former treatment is not removed in particular and is placed in the same container. It is more preferable to further add the latter treatment solution and carry out the latter treatment continuously. These treatments are suitably carried out by stirring or shaking as appropriate.
2価の鋼イオン溶液による処理次いで含硫黄還元剤によ
る接触処理を行なうことにより、2価の鋼イオンがアミ
ド基に配位し、次いで該イオンが1価に還元されると同
時に硫黄が結合して、金属光沢を有する硫化第1銅被膜
が本リアニド成形物表面に密着形成される。硫化第1銅
被膜の厚さは、前者の処理における第2銅塩の濃度に依
存するカζ前記の通)、通常0.01〜50μm程度で
ある。By treatment with a divalent steel ion solution and then contact treatment with a sulfur-containing reducing agent, the divalent steel ions are coordinated to the amide group, and then the ions are reduced to monovalent and at the same time sulfur is bonded. As a result, a cuprous sulfide coating having metallic luster is formed in close contact with the surface of the ryanide molded product. The thickness of the cuprous sulfide coating depends on the concentration of the cupric salt in the former treatment (see above) and is usually about 0.01 to 50 μm.
かくして、本発明の導電性ポリアニド成形物を製造、収
得できる。In this way, the conductive polyanidite molded article of the present invention can be manufactured and obtained.
本発明により、下記の如き顕著な効果が奏される。The present invention provides the following remarkable effects.
(1) 種々のポリアミド成形物の表rfIK硫化a
il#!被膜を、極めて簡便に密着形成でき、従来得ら
れたことのない新規導電性ポリアミド成形物を収得でき
る。(1) Surface rfIK sulfide a of various polyamide moldings
il#! A film can be formed in close contact extremely easily, and a novel conductive polyamide molded product that has never been obtained before can be obtained.
(2)硫化第1鋼被膜の密着性は、極めて優れておシ、
クロスカッチインタ試験で杜通常100%の密着率を示
す◇
(3)硫化第1銅被膜は、ポリアニド成形物表面を均一
に被覆しているので、導電性が非常に安定している。ま
た、導電性自体については、被覆されていないポリアミ
ド成形物が通常1011Ω・1程度の電気抵抗を示すの
に対して本発明導電性ポリアミド成形物では電気抵抗が
通常104Ω・1以下程度になシ優れた導電性を示すに
至る。(2) The adhesion of the sulfide No. 1 steel coating is extremely excellent.
(3) The cuprous sulfide coating uniformly covers the surface of the polyanid molded product, so its conductivity is extremely stable. Regarding conductivity itself, while uncoated polyamide molded products usually exhibit an electrical resistance of about 1011 Ω·1, the conductive polyamide molded products of the present invention usually have an electrical resistance of about 10 4 Ω·1 or less. This results in excellent conductivity.
(4)硫化第1銅被膜は、耐寒性、耐熱性にも優れてい
る。(4) The cuprous sulfide coating also has excellent cold resistance and heat resistance.
−塞−」1911
以下、実施例を挙けて、本発明をよシ具体例に説明する
。1911 The present invention will be described in detail below with reference to Examples.
実施例 1
ボリアニド−6の円板状フィルム(厚さ:50p m
、直径ニア11)を、ヨウ素2.5 f (10vtm
e1%ヨウ化カリウム3.3F(20pptMIa/
)をl 00 zt蒸留水に溶解して調製したヨウ素
溶液に室温で約20秒間髪してアミド基の活性化処理を
施し、約30分間流水で水洗した。硝酸第2銅溶液20
ml<0.4fllal/It>に室温で数分間浸し
、次いでチオ硫酸ナトリウム溶液20xl(0,4pm
al/l )を加えて更に室温で数分置き、63℃で加
熱し3時間振とり後、水洗乾燥して、前縁の金属光沢を
有する硫化第1鋼被膜が上記フィルムの両面に密着形成
された本発明導電性ボリア三ドフイルムを得た。Example 1 Disc-shaped film of polyanide-6 (thickness: 50 p m
, diameter near 11), iodine 2.5 f (10vtm
e1% potassium iodide 3.3F (20pptMIa/
) was dissolved in distilled water for about 20 seconds at room temperature to activate the amide groups, and the hair was washed with running water for about 30 minutes. Cupric nitrate solution 20
ml<0.4flal/It> for a few minutes at room temperature, then soaked in 20xl of sodium thiosulfate solution (0.4pm/It) for a few minutes at room temperature.
al/l) was added, left at room temperature for several minutes, heated at 63°C, shaken for 3 hours, washed with water, and dried to form a No. 1 steel sulfide film with a metallic luster on the leading edge that adhered to both sides of the film. A conductive boria three-dimensional film of the present invention was obtained.
この導電性フィルムの表面固有抵抗値を、ヒユーレッド
バラカード社製のr4328Jミリオームメーター」を
使用して直流電源四点法によ#)?11定したところ2
.0X102Ωであった。The surface resistivity value of this conductive film was determined by the DC power four-point method using a "R4328J Milliohmmeter" manufactured by Hewlett-Packard Rose Card Co., Ltd. 11 decided 2
.. It was 0x102Ω.
また、この導電性フィルムの硫化第1銅被展の密層性を
下記のクロスカッティング試験法による密着率で評価し
たところ100%であシ、密着性が極めて優れることが
判った。Further, the close layer properties of this conductive film on which cuprous sulfide was applied were evaluated by the adhesion rate using the following cross-cutting test method, and it was found that the adhesion was 100%, indicating that the adhesion was extremely excellent.
0密着率の測定・・・・試験すべき導電性フィルムの導
電面に縦、横1fi間隔で基盤目状にフィルム面に達す
る刻線を11本ずつ入れたのち、刻線上に巾1.0〜t
、5aII%長さ3〜5cIlの粘着デー″ljにチバ
ン(株)製「メンヂインタテープ」)をはυ付け、次い
でフィルム面に対して90〜180°の方向にテープを
一気に引き剥がし、基盤目100個のうち硫化第1鋼被
膜が剥がれないで残った個数の割合を%で表示した。こ
れらの操作はすべて室温で行なつ九。Measurement of 0 adhesion rate: After making 11 score lines that reach the film surface in a matrix pattern at 1-fi intervals vertically and horizontally on the conductive surface of the conductive film to be tested, place 1.0 in width on the score lines. ~t
, 5aII% ``Menji Inter Tape'' manufactured by Chiban Co., Ltd.) was attached to an adhesive tape having a length of 3 to 5cIl, and then the tape was peeled off at once in a direction of 90 to 180° with respect to the film surface. The ratio of the number of pieces remaining without peeling off the sulfide No. 1 steel coating out of 100 pieces of the base plate is expressed as a percentage. All these operations should be performed at room temperature.
また、この導電性フィルムをxI!光電子分光法(ES
CA)(高滓製作所(株)製「EscA750」及びデ
ーター処理装置(−ESCAPAC760」を使用)に
よシ表面分析を行なったところ、硫化第1IRのピーク
を確認した。また、アミド基の窒素のピークが消失し、
アニドカルボニル炭素のピーク、特に副ピークが大きく
シフトしていることによシ、硫化第1銅がアニド基上に
配位していることが推定できる。分析結果を第1表に示
す。第1表中の数値の単位はeVである。In addition, this conductive film xI! Photoelectron spectroscopy (ES)
CA) (Takasu Seisakusho Co., Ltd.'s "EscA750" and a data processing device (-ESCAPAC760) were used to conduct a surface analysis, and the peak of the 1st IR sulfide was confirmed.Also, the peak of the 1st IR of sulfide was confirmed. The peak disappears,
The large shift in the peak of the anidocarbonyl carbon, especially the subpeak, suggests that cuprous sulfide is coordinated on the anido group. The analysis results are shown in Table 1. The units of numerical values in Table 1 are eV.
第 1 表
また、この導電性フィルムを走査型電子顕微鏡(日本電
子(株)製r7’−1oo」)によシ観察したところ、
厚さ0.2〜0.3μmの硫化第1銅被膜が均一に密着
形成されていることが判った。この走査型電子顕微鏡写
真(倍率30000倍)を第1図に示した。Table 1 Also, when this conductive film was observed using a scanning electron microscope (manufactured by JEOL Ltd. r7'-1oo),
It was found that a cuprous sulfide coating having a thickness of 0.2 to 0.3 μm was formed in uniform and close contact. A scanning electron micrograph (magnification: 30,000 times) is shown in FIG.
更に、この導電性フィルムの耐寒性を液体窒素(−17
6℃)に1時間浸漬後前配置着率の測定をすることによ
シ、又耐熱性を沸騰水(100℃)に1時間浸漬後前配
置着率の測定をすることによシ、それぞれ調べたところ
、いずれにおいても100%の密着率を示し、耐寒性及
び耐熱性に優れることが判った。Furthermore, the cold resistance of this conductive film was tested using liquid nitrogen (-17
The heat resistance was determined by measuring the front deposition rate after immersion in boiling water (100℃) for 1 hour, and by measuring the front deposition rate after immersion in boiling water (100℃) for 1 hour. As a result of the investigation, it was found that the adhesion rate was 100% in all cases, and it was found to be excellent in cold resistance and heat resistance.
実施例 2
原料のボリア三ド−6の円板状フィルムとして厚さが1
50μmのものを用いた他は、実施例1と同様にして本
発明導電性ボリアミドフィルムを得た。Example 2 A disc-shaped film of boria trido-6 as a raw material with a thickness of 1
A conductive polyamide film of the present invention was obtained in the same manner as in Example 1, except that a film having a diameter of 50 μm was used.
この導電性フィルムの表面固有抵抗値を、実施例1と同
様にして測定したところ6.4X102Ωであった。ま
た、前記密着率の測定によシ密着率を調べたところ10
0%であった。The surface resistivity value of this conductive film was measured in the same manner as in Example 1 and was found to be 6.4×10 2 Ω. In addition, when the adhesion rate was investigated by measuring the adhesion rate, it was found that the adhesion rate was 10.
It was 0%.
更に、この導電性フィルムを実施例1と同様に走査型電
子顕微鏡を用いてw4察した。走査型電子顕微鏡写真を
第2〜今図に示す。第2図(倍率30000倍)は未処
理のポリアミド−6フイルムの表面を示す。第3図(倍
率30000倍)は本実施例で得た導電性フィルムの表
面を示すものであシ、第2図の場合とほぼ同程度に表面
が平滑であり硫化第1銅被膜が均一に密着形成されてい
ることが判る。第4図(倍率4200倍)は本実施例で
得た導電性フィルムの断面を示すものであシ、厚さ約5
μmの硫化第1銅被膜が均一に密着形成されていること
が判る。Furthermore, this conductive film was inspected using a scanning electron microscope in the same manner as in Example 1. Scanning electron micrographs are shown in Figures 2-2. FIG. 2 (30,000x magnification) shows the surface of an untreated polyamide-6 film. Figure 3 (30,000x magnification) shows the surface of the conductive film obtained in this example.The surface is almost as smooth as that in Figure 2, and the cuprous sulfide coating is uniform. It can be seen that they are formed in close contact. Figure 4 (4200x magnification) shows the cross section of the conductive film obtained in this example, with a thickness of about 5.
It can be seen that the cuprous sulfide coating with a thickness of μm is uniformly and tightly formed.
実施例 3
原料のポリアミド−6の円板状フィルムとして厚さが5
μmのものを用いた他社実施例1と同様にして本発明導
電性ポリアミドフィルムを得九〇この導電性フィルムの
表面固有抵抗値を、タケタ理研工業(株)製の「TR6
8今3マルチメーター」を使用して直流電源二点法によ
シ測定したところ3.2X103Ωであった。Example 3 A disc-shaped film of raw material polyamide-6 with a thickness of 5
A conductive polyamide film of the present invention was obtained in the same manner as in Example 1 of another company using μm polyamide film.
The resistance was measured using a DC power supply two-point method using a 3.8 x 10 3 multimeter.
実施例 斗
原料のボリアニド−6の円板状フィルムとして厚さが1
50μ解のものを用い、アミド基の活性化処理を0.0
5 tnol / lのメタフレリール水溶液に今時間
髪して行なった他は、実施例1と同様にして本発明導電
性ボリアニドフィルムを得た。Example: As a disc-shaped film of borianide-6 as a raw material, the thickness is 1
Use a 50μ solution and activate the amide group to 0.0
A conductive polyanide film of the present invention was obtained in the same manner as in Example 1, except that the hair was soaked in an aqueous solution of 5 tnol/l of metafureryl.
この導電性フィルムの表面固有抵抗値を、実施例1と同
様にして測定したところ6.5X102Ωであった。ま
た、前記密着率の測定により密着率を調べたところ10
0%であった。The surface resistivity value of this conductive film was measured in the same manner as in Example 1 and was found to be 6.5×10 2 Ω. In addition, when the adhesion rate was investigated by measuring the adhesion rate, it was found that the adhesion rate was 10.
It was 0%.
実施例5〜7
原料のポリアミド円板フィルムとして第2表に示すもの
を用いた他は、実施例璽と同様にして本発明導電性ポリ
アミドフィルムを得た〇実施例1と同様にして測定した
表面固有抵抗値及び密着率を第2表に併記した。Examples 5 to 7 Conductive polyamide films of the present invention were obtained in the same manner as in Example 1, except that the polyamide disk film shown in Table 2 was used as the raw material.Measured in the same manner as in Example 1. The surface resistivity value and adhesion rate are also listed in Table 2.
第 2.表
径=71)を実施例1で述べたヨウ素溶液に室温で□約
20秒間髪してアミド基め活性化処理を施し、約39分
間流水で水洗した後□、空気乾燥した。硝酸第2銅溶鹸
20sl(0,4mal/I )に室温で数分間浸し、
次いでチオ硫酸ナトリウム溶液20 ml(0−4””
/j)を加えて更に室温で数分置き、63℃で加熱し3
時間振とう赫、水洗乾燥して、青色の金属光沢を有する
本発明導電性ボリアニド織布を得た。実施例1と同様に
して測定した表面固有抵抗値を第3表に示す@
第 3 表
実施例10
ポリエチレ:/(PE)多孔性フィルムの上に手酸に溶
解したボリアニド−6を牛ヤストして、薄膜を形成させ
た。このフィルムを用い実施例1と □同様にして
、PE多孔性フィルムに担持したボリアニド−6薄−0
7面よ硫イt、、1銅被膜を密着形成して本発明−電性
ボリアミド−ポリエチレン多層フィルムを得た。・
この導電性フィルムの表面固有抵抗値を、実施例3と同
様にして測定したところ1.7X10’ Ωでありた
。2nd. The hair (surface diameter = 71) was immersed in the iodine solution described in Example 1 at room temperature for about 20 seconds, subjected to amide group activation treatment, washed with running water for about 39 minutes, and then air-dried. Immerse it in 20 sl (0.4 mal/I) of cupric nitrate solution for several minutes at room temperature,
Then add 20 ml of sodium thiosulfate solution (0-4""
/j), leave it at room temperature for a few minutes, and heat it to 63℃.
After shaking for a while, washing with water and drying, a conductive polyanide woven fabric of the present invention having a blue metallic luster was obtained. The surface resistivity values measured in the same manner as in Example 1 are shown in Table 3. A thin film was formed. Using this film, polyanide-6 thin-0 supported on PE porous film was prepared in the same manner as in Example 1.
A copper coating was closely formed on 7 sides to obtain an electrically conductive polyamide-polyethylene multilayer film of the present invention. - The surface resistivity value of this conductive film was measured in the same manner as in Example 3 and was found to be 1.7×10' Ω.
第1図は、実施例1で得た本発明導電性ポリアミドフィ
ルムの走査型電子顕微鏡写真(倍率30000倍)を示
す。第2図は、未処理のボリアミド−6フイルムの走査
型電子顕微鏡写真(倍率30000倍)を示す。第5図
及び第4図は、実施例2で得た本発明導電性ポリアミド
フィルムの走査型電子顕微鏡写真(倍率第3図は300
00倍、第4図は4200倍)を示す。
(以 上)
・、、;・′
第1図
第2図
〜
9 に
≧
5゛
ミ
、゛、lに
・七S ゛
、:、゛
第3図
第4図FIG. 1 shows a scanning electron micrograph (magnification: 30,000 times) of the conductive polyamide film of the present invention obtained in Example 1. FIG. 2 shows a scanning electron micrograph (30,000x magnification) of an untreated polyamide-6 film. Figures 5 and 4 are scanning electron micrographs of the conductive polyamide film of the present invention obtained in Example 2 (magnification of Figure 3 is 300
00 times, and 4200 times in Fig. 4). (The above) ・、、;・' Figure 1 Figure 2 - 9 ≧ 5゛mi,゛, l, 7S ゛,:,゛Figure 3 Figure 4
Claims (3)
形成されていることを特徴とする導電性ポリアミド成形
物。(1) A conductive polyamide molded article characterized in that a cuprous sulfide coating is closely formed on the surface of the polyamide molded article.
を2価の銅イオン溶液で処理し、次いで含硫黄還元剤と
接触させて銅イオンを1価に還元してポリアミド成形物
の表面に硫化第1銅被膜を密着形成せしめることを特徴
とする導電性ポリアミド成形物の製造法。(2) A polyamide molded product that has been subjected to activation treatment for amide groups is treated with a divalent copper ion solution, and then brought into contact with a sulfur-containing reducing agent to reduce the copper ions to monovalent one and coat the surface of the polyamide molded product. A method for producing a conductive polyamide molded article, which comprises closely forming a cuprous sulfide coating.
合物及びフェノール化合物の少なくとも1種を用いて行
なう特許請求の範囲第2項に記載の製造法。(3) The production method according to claim 2, wherein the activation treatment of the amide group is performed using at least one of a halogen, a halogen compound, and a phenol compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60098298A JPS61255848A (en) | 1985-05-09 | 1985-05-09 | Dielectric polyamide molded shape and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60098298A JPS61255848A (en) | 1985-05-09 | 1985-05-09 | Dielectric polyamide molded shape and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61255848A true JPS61255848A (en) | 1986-11-13 |
| JPH0449859B2 JPH0449859B2 (en) | 1992-08-12 |
Family
ID=14216010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60098298A Granted JPS61255848A (en) | 1985-05-09 | 1985-05-09 | Dielectric polyamide molded shape and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61255848A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5297132A (en) * | 1986-10-29 | 1994-03-22 | Dai Nippon Insatsu Kabushiki Kaisha | Draw type optical recording medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60160197A (en) * | 1984-01-30 | 1985-08-21 | 旭化成株式会社 | Polymer mold with electromagnetic shielding property |
| JPS60198004A (en) * | 1984-03-21 | 1985-10-07 | 旭化成株式会社 | Method of producing conductive polymer material |
-
1985
- 1985-05-09 JP JP60098298A patent/JPS61255848A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60160197A (en) * | 1984-01-30 | 1985-08-21 | 旭化成株式会社 | Polymer mold with electromagnetic shielding property |
| JPS60198004A (en) * | 1984-03-21 | 1985-10-07 | 旭化成株式会社 | Method of producing conductive polymer material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5297132A (en) * | 1986-10-29 | 1994-03-22 | Dai Nippon Insatsu Kabushiki Kaisha | Draw type optical recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0449859B2 (en) | 1992-08-12 |
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