JPS61277960A - Electrophotographic photoreceptor - Google Patents

Abstract

PURPOSE:To improve a fatigue property of the title body by specifying a doping amount of an oxygen contd. in the deposited film composed of a Se-Te type alloy. CONSTITUTION:The doping amount of the oxygen contd. in the deposited film of Se-Te type alloy is specified <=0.1ppm. The oxygen amount of the optical sensitive body is that of the vapor-deposition mother material of 1/10-1/100. The vapor-deposition has a function of a sort of the distillation. As the characteristics and quality of the prescribed body are influence on a degree of vacuum and a partial pressure of the oxygen, the prescribed characteristics and quality are difficult to ensure by mere oxygen amount contd. in the deposited mother material. Therefore, the prescribed property of the title body is effective to be controlled by directly measuring the oxygen amount contd. in the photosensitive body. Thus the fatigue characteristics of the title body may be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to an electrophotographic photoreceptor having a 5e-Te (selenium-tellurium) vaporized film, and can also be applied to photoelectric elements.

Prior Art 5E-Te photoreceptors are required to have various characteristics when used as electrophotographic photoreceptors, but one of the problems is an increase in residual potential due to repeated use. .

Countermeasures have been considered to address this issue, such as doping with halogen to prevent the increase in residual potential, but this has resulted in the problem of an increase in internal temperature as a side effect.

As a result of various analyses, the reason for the increase in residual potential is that Se-Te
It has become clear that oxygen contained in the alloy has an effect. Therefore, the amount of oxygen doped in the Se-Te alloy has been specified as the base material for vapor deposition, but the amount of oxygen in the photoreceptor formed by vapor deposition is 1:1 with the amount of oxygen in the base material for vapor deposition. There was no correspondence, and their relationship remained unknown.

This time, as a result of making photoreceptors using various vapor-deposited base materials, directly measuring the amount of oxygen doped in the photoreceptor, and studying the correspondence with the characteristics of the photoreceptor, the relationship between the characteristics of the photoreceptor and the amount of doping was clearly established. became.

Purpose As a result, the present invention provides a 5e-Te based photoreceptor (D drum,
The purpose of this invention is to improve the fatigue characteristics of electrophotography, especially by reducing the content of impurity oxygen (H drum).

Configuration The configuration of this invention to achieve the above object is 5e-T.
The amount of oxygen doped in the e-based alloy vaporized film is 0. This is a 5e-Te based electrophotographic photoreceptor having a photoreceptor of 1 ppm or less.

From various experiments, it has been found that the amount of oxygen in the photoreceptor is 1/10 to 1/100 of the amount of oxygen in the vapor deposition base material. The reason for this is that the oxygen bonded to Se in the vapor deposition base material is
O,Se evaporates in the form of Oz, but its vapor pressure is high;
This is because the directivity is weak, so not only is the proportion of oxygen incorporated into the deposited film reduced, but it also becomes a residue in the deposition base material as a metal oxide, and oxygen inevitably remains in the base material.

Furthermore, although the amount of oxygen bonded to Se in the Se-Te alloy base material is one to two orders of magnitude lower than that in Te,
It has been found that this has a large effect on the electrophotographic properties of the photoreceptor. That is, the influence of oxygen bonded to Te in the alloy is smaller than that of Se. The reason for this is thought to be that Te has a strong tendency to oxidize, and Te oxides do not evaporate and remain in the base material as a residue.

In short, vapor deposition is a type of distillation action, and it is also affected by the atmosphere such as the degree of vacuum and oxygen partial pressure during vapor deposition, so it is difficult to guarantee the characteristics and quality of the photoreceptor based only on the amount of oxygen in the vapor deposition base material. Therefore, it is clear that it is effective to directly measure the amount of oxygen in the photoreceptor and adjust it.

The relationship between the amount of oxygen in the photoreceptor and its characteristics will be specifically explained below with reference to Examples.

Example 1 5e-
A Te alloy (Te 8 wt %) was produced, and this alloy was vapor-deposited using an electric heating heater to produce a photoreceptor with a film thickness of 50 μI.

The test method for the photoreceptor made in this way is that the charging current is 50
The surface potential is measured while repeating simultaneous exposure with a quenching lamp of 0 μA and illuminance of 1000 β×.

This photoreceptor was loaded into a copying machine, charging and quenching exposure were repeated 50 times, and the internal residual accumulated potential Voto was compared.

Next, the oxygen concentration in the base alloy for vapor deposition and the peeled photosensitive film was measured by spectrophotometry using pararosaniline. The results are shown in Table 1. Although the oxygen concentration in the deposited film is significantly lower than that in the raw material alloy, the amount of oxygen in the film corresponds to the residual potential. However, the amount of oxygen is slightly higher than that of Se alone. It can be seen that the residual potential rapidly increases from lppm or higher.

Table 1 Example 2 Oxygen concentration analysis result is 0.5 with nominal purity of 99.999%
A photoreceptor containing only Se was made using a commercially available ppm Se material.

Furthermore, the surface has a nominal purity of 9 with various oxygen doping amounts.
An alloy with a Te content of 20wt% manufactured using a 9.99% Te material and the same Se material was made into a 5μ alloy in the same manner as in the example.
A two-layer type photoreceptor was produced by vapor-depositing to a thickness of m.

The residual potential of this photoreceptor was measured in the same manner as in Example 1. The oxygen concentration in the alloy deposited layer was analyzed by separately depositing the alloy to a thickness of 50 μm and peeling off the deposited layer.

As a result, as in Example 1, a correspondence between oxygen concentration and residual potential was observed. The results are shown in Table 2.

Table 2 It can be seen from the above that the residual potential increases rapidly as the temperature increases.

Effects As explained above, when the amount of oxygen in the 5e-Te photoreceptor is reduced to 0.
By reducing the amount to 1 ppm or less, the fatigue characteristics of the photoreceptor can be improved.

Patent Applicant Ricoh Co., Ltd. - Agent Patent Attorney Hidetake Komatsu Agent Patent Attorney Hiroshi Asahi Procedural Amendment (Master) July 26, 1985 Commissioner of the Patent Office Michibe Uga 1, Patent Application for Indication of Case Relationship to case No. 118910/1980 Name of patent applicant (674) Ricoh Co., Ltd. 4゜Agent 5゜Date of amendment order (voluntary) 63 Subject of amendment - Column 1 for detailed explanation of the invention in the specification 1) Specification page 2 line 16 r (D drum, 11 drum)
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When the value exceeds 0.1 ppm, it is corrected to ``.

Claims (1)

[Claims] The amount of oxygen doped in the Se-Te alloy deposited film is 0.1 pp
A Se-Te based electrophotographic photoreceptor having a particle diameter of m or less.