JPS6129177A - 半導体不揮発性メモリ - Google Patents

半導体不揮発性メモリ

Info

Publication number
JPS6129177A
JPS6129177A JP15038684A JP15038684A JPS6129177A JP S6129177 A JPS6129177 A JP S6129177A JP 15038684 A JP15038684 A JP 15038684A JP 15038684 A JP15038684 A JP 15038684A JP S6129177 A JPS6129177 A JP S6129177A
Authority
JP
Japan
Prior art keywords
insulating film
region
gate
floating gate
charge injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15038684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430755B2 (it
Inventor
Masayuki Namiki
並木　優幸
Masaaki Kamiya
昌明 神谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments and Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments and Electronics Ltd filed Critical Seiko Instruments and Electronics Ltd
Priority to JP15038684A priority Critical patent/JPS6129177A/ja
Publication of JPS6129177A publication Critical patent/JPS6129177A/ja
Publication of JPH0430755B2 publication Critical patent/JPH0430755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection

Landscapes

  • Non-Volatile Memory (AREA)
JP15038684A 1984-07-19 1984-07-19 半導体不揮発性メモリ Granted JPS6129177A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15038684A JPS6129177A (ja) 1984-07-19 1984-07-19 半導体不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15038684A JPS6129177A (ja) 1984-07-19 1984-07-19 半導体不揮発性メモリ

Publications (2)

Publication Number Publication Date
JPS6129177A true JPS6129177A (ja) 1986-02-10
JPH0430755B2 JPH0430755B2 (it) 1992-05-22

Family

ID=15495856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15038684A Granted JPS6129177A (ja) 1984-07-19 1984-07-19 半導体不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS6129177A (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005536048A (ja) * 2002-08-13 2005-11-24 ジェネラル・セミコンダクター・インコーポレーテッド プログラム可能なしきい値電圧を有するｄｍｏｓ装置
US9057446B2 (en) 2011-12-28 2015-06-16 Denso Corporation Pressure control apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005536048A (ja) * 2002-08-13 2005-11-24 ジェネラル・セミコンダクター・インコーポレーテッド プログラム可能なしきい値電圧を有するｄｍｏｓ装置
US9057446B2 (en) 2011-12-28 2015-06-16 Denso Corporation Pressure control apparatus

Also Published As

Publication number Publication date
JPH0430755B2 (it) 1992-05-22

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