JPS6143847B2 - - Google Patents

Info

Publication number
JPS6143847B2
JPS6143847B2 JP52110703A JP11070377A JPS6143847B2 JP S6143847 B2 JPS6143847 B2 JP S6143847B2 JP 52110703 A JP52110703 A JP 52110703A JP 11070377 A JP11070377 A JP 11070377A JP S6143847 B2 JPS6143847 B2 JP S6143847B2
Authority
JP
Japan
Prior art keywords
film
etching
substrate
polycrystalline silicon
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52110703A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5444477A (en
Inventor
Oonori Ishikawa
Takeya Ezaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11070377A priority Critical patent/JPS5444477A/ja
Publication of JPS5444477A publication Critical patent/JPS5444477A/ja
Publication of JPS6143847B2 publication Critical patent/JPS6143847B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP11070377A 1977-09-14 1977-09-14 Manufacture for semiconductor device Granted JPS5444477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11070377A JPS5444477A (en) 1977-09-14 1977-09-14 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11070377A JPS5444477A (en) 1977-09-14 1977-09-14 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5444477A JPS5444477A (en) 1979-04-07
JPS6143847B2 true JPS6143847B2 (2) 1986-09-30

Family

ID=14542306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11070377A Granted JPS5444477A (en) 1977-09-14 1977-09-14 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5444477A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639848U (2) * 1986-07-02 1988-01-22

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234362A (en) * 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
JPS57112028A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
EP2692514B1 (de) 2012-07-31 2019-06-26 Wincor Nixdorf International GmbH Kompaktierungsvorrichtung und Verfahren zum Kompaktieren von Gebinden

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639848U (2) * 1986-07-02 1988-01-22

Also Published As

Publication number Publication date
JPS5444477A (en) 1979-04-07

Similar Documents

Publication Publication Date Title
US6071815A (en) Method of patterning sidewalls of a trench in integrated circuit manufacturing
US6074951A (en) Vapor phase etching of oxide masked by resist or masking material
US5876879A (en) Oxide layer patterned by vapor phase etching
JPH02177355A (ja) フォトレジストエッチバック技術を利用したトレンチキャパシタ形成方法
US4460435A (en) Patterning of submicrometer metal silicide structures
JP3019367B2 (ja) 半導体装置の製造方法
US4634495A (en) Dry etching process
JPS6143847B2 (2)
JPH0239435A (ja) 半導体装置の製造方法
JP2002110654A (ja) 半導体装置の製造方法
JPS58169150A (ja) フオトマスクの製造方法
JPH03769B2 (2)
US5509995A (en) Process for anisotropically etching semiconductor material
JP2720404B2 (ja) エッチング方法
JPH07135247A (ja) 半導体装置の製造方法
US6528341B1 (en) Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists
JPS5961124A (ja) 薄膜形成方法
JP2602285B2 (ja) 半導体装置の製造方法
JPS594027A (ja) 半導体装置の製造方法
KR100268859B1 (ko) 반도체 장치의 금속 배선형 방법
JPH05190441A (ja) レジストパターン形成方法
JPH0143453B2 (2)
JPH0586659B2 (2)
CN121358191A (zh) 一种薄膜侧壁小角度的制备方法
KR0141965B1 (ko) 금속층 경사에칭방법