JPS6144866U - 半導体レ−ザ−・ダイオ−ド - Google Patents

半導体レ−ザ−・ダイオ−ド

Info

Publication number
JPS6144866U
JPS6144866U JP1985116344U JP11634485U JPS6144866U JP S6144866 U JPS6144866 U JP S6144866U JP 1985116344 U JP1985116344 U JP 1985116344U JP 11634485 U JP11634485 U JP 11634485U JP S6144866 U JPS6144866 U JP S6144866U
Authority
JP
Japan
Prior art keywords
layer
strip
shaped
laser diode
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985116344U
Other languages
English (en)
Inventor
マルクスクリスチアン、アマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JPS6144866U publication Critical patent/JPS6144866U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第２区は公知の半導体レーザー・ダイオードの断面図で
あり、第１図はこの考案による半導体レーザー・ダイオ
ードの斜視図である。 第１図において１２は半導体基板、１３乃至１６はダイ
オードを稠成する半導体材料層、１７と１８は電極層で
ある。

Claims (1)

    【実用新案登録請求の範囲】
  1. ・ 異種半導体接合を含む積層構造を備え、その第一層
    １６はｐドープガリウム・ヒ素（ＧａＡｓ）からなり両
    側から狭められて帯状となり、それに続く第二層１５は
    ｐドープガリウム・アルミニウム・ヒ素（Ｇａ１−ＸＡ
    ＩＸＡｓ）から成り帯状の第一層の外にある両側部分は
    その中央部分より薄くされ、最上部の電極層１８は帯状
    の第一層１６命体と第二層１５の両側部分１５１，１５
    ２とを覆っている半導体レーザー・ダイオードにおいて
    、最上部電極層１８の材料としてクロム金合金が使用さ
    れていること、第一層１６のドーピング密度が少くとも
    ５×１α８ｃｍ−３であること、第二層１５のトーヒン
    グ密度は１σ８ｏ−３以下であってそのＡＩ比率Ｘが０
    ．２５と０．６の間にあること、帯状の第一層１６の外
    側にある第二層１５の部分１５１．１５２が約０．４μ
    ｍの厚さになっていることを特徴とする半導体レーザー
    ・ダイオード。
JP1985116344U 1978-12-28 1985-07-29 半導体レ−ザ−・ダイオ−ド Pending JPS6144866U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2856507.3 1978-12-28
DE19782856507 DE2856507A1 (de) 1978-12-28 1978-12-28 Halbleiter-laserdiode

Publications (1)

Publication Number Publication Date
JPS6144866U true JPS6144866U (ja) 1986-03-25

Family

ID=6058590

Family Applications (2)

Application Number Title Priority Date Filing Date
JP17403979A Pending JPS5591189A (en) 1978-12-28 1979-12-27 Semiconductor laser diode and method of fabricating same
JP1985116344U Pending JPS6144866U (ja) 1978-12-28 1985-07-29 半導体レ−ザ−・ダイオ−ド

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP17403979A Pending JPS5591189A (en) 1978-12-28 1979-12-27 Semiconductor laser diode and method of fabricating same

Country Status (5)

Country Link
US (1) US4352187A (ja)
JP (2) JPS5591189A (ja)
DE (1) DE2856507A1 (ja)
FR (1) FR2445638B1 (ja)
GB (1) GB2038538B (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2488049A1 (fr) * 1980-07-31 1982-02-05 Bouley Jean Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication
JPS5833885A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd レ−ザ−ダイオ−ド
DE3234389C2 (de) * 1982-09-16 1995-03-09 Siemens Ag Halbleiter-Laserdiode
DE3332398A1 (de) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart Multimodenlaser
GB2156585B (en) * 1984-03-16 1987-10-21 Hitachi Ltd Light-emitting device electrode
USRE34378E (en) * 1984-03-16 1993-09-14 Hitachi, Ltd. Light emitting device with improved electrode structure to minimize short circuiting
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
DE3437209A1 (de) * 1984-10-10 1986-04-17 Siemens AG, 1000 Berlin und 8000 München Verbesserung zu einem monomoden-diodenlaser
DE3531734A1 (de) * 1985-09-05 1987-03-12 Siemens Ag Einrichtung zur positionierung eines halbleiterlasers mit selbstjustierender wirkung fuer eine anzukoppelnde glasfaser
DE3534744A1 (de) * 1985-09-28 1987-04-09 Standard Elektrik Lorenz Ag Laservorrichtung mit stabilisierter ausgangsleistung
EP0236713A3 (de) * 1986-02-10 1988-06-29 Siemens Aktiengesellschaft Laserdiode
EP0237812A3 (de) * 1986-03-20 1988-06-29 Siemens Aktiengesellschaft Halbleiterlaser-Array mit gebündelter Abstrahlung
DE3612695A1 (de) * 1986-04-15 1987-10-22 Siemens Ag Halbleiter-laserdiode mit qualitativ verbesserter resonator-spiegelflaeche
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JPS63306689A (ja) * 1987-05-22 1988-12-14 シーメンス、アクチエンゲゼルシヤフト 横結合レーザーダイオードアレー
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
EP0383958B1 (de) * 1989-02-15 1993-06-02 Siemens Aktiengesellschaft Abstimmbarer Halbleiterlaser
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US6859277B2 (en) * 2002-08-27 2005-02-22 Particle Measuring Systems, Inc. Particle counter with strip laser diode
DE102004052857B4 (de) * 2004-10-26 2006-09-07 Forschungsverbund Berlin E.V. Optisches Element und Verfahren zu dessen Herstellung
DE102015116865B4 (de) 2015-10-05 2025-07-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterchips und Halbleiterchip

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5071281A (ja) * 1973-10-26 1975-06-13

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286093A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Striped semiconductor laser
US4206468A (en) * 1976-05-11 1980-06-03 Thomson-Csf Contacting structure on a semiconductor arrangement
FR2351504A1 (fr) * 1976-05-11 1977-12-09 Thomson Csf Nouveau dispositif de prise de contact sur un ensemble semi-conducteur
US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
JPH0571281A (ja) * 1991-09-12 1993-03-23 Naka Ind Ltd 避難用梯子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5071281A (ja) * 1973-10-26 1975-06-13

Also Published As

Publication number Publication date
DE2856507A1 (de) 1980-07-17
DE2856507C2 (ja) 1989-03-30
FR2445638A1 (fr) 1980-07-25
US4352187A (en) 1982-09-28
FR2445638B1 (fr) 1986-02-21
GB2038538A (en) 1980-07-23
GB2038538B (en) 1983-02-16
JPS5591189A (en) 1980-07-10

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