JPS614969A - Probe device - Google Patents

Probe device

Info

Publication number
JPS614969A
JPS614969A JP12452684A JP12452684A JPS614969A JP S614969 A JPS614969 A JP S614969A JP 12452684 A JP12452684 A JP 12452684A JP 12452684 A JP12452684 A JP 12452684A JP S614969 A JPS614969 A JP S614969A
Authority
JP
Japan
Prior art keywords
wafer
probe stylus
stage
probe
moved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12452684A
Other languages
Japanese (ja)
Inventor
Teruya Sato
光弥 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP12452684A priority Critical patent/JPS614969A/en
Publication of JPS614969A publication Critical patent/JPS614969A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

PURPOSE:To polish a probe stylus effectively by allowing the probe stylus to abut on an abrasive part at different positions and thus preventing dust such as scraps of aluminum produced from the probe stylus from sticking on the probe stylus again. CONSTITUTION:A wafer stage 9 is moved in the X and Y directions during a test of a wafer 6 to position an IC chip mounted on the wafer 6 under the probe stylus 2 successively, and then a Z stage 8 is moved up and down to bring the probe stylus 2 into electric contact with the bonding pad of the IC chip. If the probe stylus needs to be polished during the test of the wafer, the wafer stage 9 is moved in the X and Y directions to position the abrasive plate 3 under the probe stylus 2, and the Z stage 8 is moved up and down at this position to allow the abrasive plate 3 to abut on the probe stylus 2 several times. In this case, the wafer stage 9 is moved finely in the X and Y directions every time the abrasive plate 3 to make a shift of the abutting position of the probe stylus 2 to the abrasive plate 3.

Description

【発明の詳細な説明】 〔技術分野〕 本発明はプローブ装置、特にプローブ針の研磨機能を有
するプローブ装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a probe device, and particularly to a probe device having a probe needle polishing function.

〔従来技術〕[Prior art]

一般に半導体素子製造工程において、個々のチップに切
断する前のウェハ状態でICチップの特性をテストする
ための装置としてICテスタ及びプローブ装置(以下ウ
ェハプローパという。)が使われている。実際のテスト
はICテスタで行われるが、このICテスタとウェハ上
のICチップとの電気的コンタクトを行うのがウェハプ
ローパである。ここでウェハブローバのプローブ針は、
ICチップとの確実な電気的コンタクトを行うために、
数千〜数万コンタクト毎に研磨をする必要がある。
Generally, in a semiconductor device manufacturing process, an IC tester and probe device (hereinafter referred to as a wafer properr) is used as a device to test the characteristics of an IC chip in a wafer state before cutting into individual chips. The actual test is performed using an IC tester, and a wafer properr makes electrical contact between the IC tester and the IC chips on the wafer. Here, the probe needle of the wafer blobber is
In order to make reliable electrical contact with the IC chip,
It is necessary to polish every several thousand to tens of thousands of contacts.

従来この種の装置は、ウェハチャック上に、テストする
ウェハの代りにセラミック板等の研磨板を配置し、プロ
ーブ針にこの研磨板の同一個所を複数回突き当てること
により、プローブ針の研磨を1行なっていた。このため
、研磨時に生じる、プローブ針に附着していたウニ/\
のポンディングパッドからのアルミクズが、再びプロー
ブ針に附着してしまうという欠点があった。
Conventionally, this type of equipment places a polishing plate such as a ceramic plate on the wafer chuck in place of the wafer to be tested, and polishes the probe needle by hitting the same spot on the polishing plate multiple times with the probe needle. I was doing one line. For this reason, sea urchins attached to the probe needle that occur during polishing
The disadvantage was that aluminum debris from the bonding pad would adhere to the probe needle again.

この欠点を防ぐために従来のウェ/\プローバにおいて
は、研磨時にプローブ針部にエアを吹き付けるものもあ
ったが、この場合は特にウニ/\プローハ装置内部に又
は被測定物であるウニ/\上にアルミクズをまき散らす
という更に大きな欠点があった。
In order to prevent this drawback, some conventional wafer probers blow air onto the probe needle during polishing. An even bigger drawback was that aluminum scraps were scattered throughout the area.

〔発明の目的〕[Purpose of the invention]

本発明は、上述従来例の欠点を除去するものであり、プ
ローブ針から発生したアルミクズ等のゴミが再びプロー
ブ針に耐着しないようにし、プローブ針の効果的な研磨
を行うことのできるプローブ装置を提供することを目的
とする。
The present invention eliminates the drawbacks of the conventional example described above, and provides a probe device that prevents dust such as aluminum shavings generated from the probe needle from adhering to the probe needle again and effectively polishes the probe needle. The purpose is to provide

〔実施例〕〔Example〕

以下図面を参照して本発明の詳細な説明する。第1図は
、本発明の一実施例の概略構成図であり、プローブ・カ
ードlには、テストするウェハのチップのポンディング
パッドの配置位置に対応したプローブ針2が取り付けら
れている。またプローブカード1は不図示のプロー八本
体に取り付けられている。
The present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic diagram of an embodiment of the present invention, in which probe needles 2 are attached to a probe card 1 corresponding to the placement positions of bonding pads of chips of a wafer to be tested. Further, the probe card 1 is attached to the main body of the probe 8 (not shown).

プローブ針2の下方に配置されているのは、プローブ針
2を研磨するための研磨板3、研磨板3を搭載する研磨
板台4であり、研磨板台4は支持部5を介して、後述す
るZステージ已に連結されている。
Arranged below the probe needle 2 are a polishing plate 3 for polishing the probe needle 2 and a polishing plate stand 4 on which the polishing plate 3 is mounted. It is connected to the Z stage which will be described later.

Zステージ8は、Z方向に移動可能にウェハチャック7
を支持し、ウェハチャック7上には、テストするウェハ
6が真空チャック等で保持されている。ウェハステージ
9はXY方向に移動可能にZステージ8を支持している
The Z stage 8 supports the wafer chuck 7 movably in the Z direction.
A wafer 6 to be tested is held on the wafer chuck 7 by a vacuum chuck or the like. The wafer stage 9 supports the Z stage 8 so as to be movable in the X and Y directions.

以下に上記実施例の構成の動作について説明を行う。The operation of the configuration of the above embodiment will be explained below.

通常のウェハ6のテスト時には、ウェハステージ9がX
Y方向に移動することによりウニへ6上のICチップを
プローブ針2の下に順次位置させ、次いでZステージ8
が上下動(Z方向)することによりプローブ針2とIC
チップのポンディングパッドの電気的な接触を行ってい
る。
During normal testing of the wafer 6, the wafer stage 9 is
By moving in the Y direction, the IC chips on the sea urchin 6 are sequentially positioned under the probe needle 2, and then the Z stage 8
moves up and down (Z direction), probe needle 2 and IC
Makes electrical contact to the chip's bonding pads.

上記のウェハテストの途中で、本発明の目的であるプロ
ーブ針研磨の必要が生じた場合には、ウェハステージ9
をXY方向に移動することにより研磨板3をプローブ針
2の下に位置させ、この位置でZステージ8が研磨部(
3、4、5)を上下動することによりプローブ針2に研
磨板3を複数回突き当てる。
During the above wafer test, if it becomes necessary to polish the probe needle, which is the purpose of the present invention, the wafer stage 9
By moving the polishing plate 3 in the XY direction, the polishing plate 3 is positioned below the probe needle 2, and at this position, the Z stage 8
3, 4, and 5) to abut the polishing plate 3 against the probe needle 2 multiple times.

ところで従来のウェハプロー八においてはウェハステー
ジ9を移動せずにただ単にZステージ8を上下動させて
いたが1本発明においては、1回の突き当て終了のたび
に、すなわちZステージ8の上下動の終了のたびにウニ
/\−゛ステージ9を微小量XY方向あるいはいずれ力
1一方に移動し、次の突き当ての際にはまだプローブ針
2により突き当てが行なわれていなし1研磨板3の領域
を使用するものである。なお研磨板3にお心するプロー
ブat2の突き当て位置の変更は、研磨板3のゴミの耐
着程度に応じて一回あるし)は複数回の研磨毎に行う。
By the way, in the conventional wafer blower, the Z stage 8 was simply moved up and down without moving the wafer stage 9. However, in the present invention, the Z stage 8 is moved up and down every time one abutment is completed. Each time the stage 9 is moved in the XY direction or in one direction by a small amount of force 1, the probe needle 2 has not yet made the abutment with the next abutment. It uses the area of The abutting position of the probe at2 on the polishing plate 3 may be changed once or every time a plurality of polishings are performed (depending on the degree of dust adhesion resistance of the polishing plate 3).

なお、前述の研磨部(3、4、5)と着脱可能としてお
き、研磨後にこれをウエノスーステージ部(7,8,9
)から切り離し、この研磨部をエアー吹き付は等により
クリーニングすること力くできるように構成してもよl
、X。
It should be noted that the above-mentioned polishing parts (3, 4, 5) can be attached and detached, and after polishing, this can be attached to the Uenosu stage part (7, 8, 9).
), and the polishing part may be configured so that it can be cleaned forcefully by air blowing, etc.
,X.

更に上記実施例では研磨部(3、4、5)をウェハステ
ージ部(6,7,9)とMll (四に言ジ(するよう
に構成したが、代りに研磨板をウニ/\チャ・アク上に
載置し、突き当て毎にXY方向番と移動するようにして
もよい。
Furthermore, in the above embodiment, the polishing section (3, 4, 5) was configured to be connected to the wafer stage section (6, 7, 9), but instead, the polishing plate was It may also be placed on an axle and moved in the X and Y directions each time it abuts.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明番こよれif・ウエノ\プ
ローバの研磨時における動作を僅かに変更するのみで、
プローブ針から発生したアルミクズ等のゴミが再びプロ
ーブ針に付着するという欠点を防ぐことができ、したが
ってプローブ針の効果的な研磨を行うことができるとい
う効果がある。
As explained above, by only slightly changing the operation of the present invention when polishing the prober,
It is possible to prevent the drawback that dust such as aluminum scraps generated from the probe needle adheres to the probe needle again, and therefore the probe needle can be effectively polished.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例のウェ/\プローバの概略断
面図である。 1はプローブカード、2はプローブ針、3は研磨板、4
は研磨台、5は支持部、6はウニ/\、7はウェハチャ
ック、8はZステージ、9はウェハステージである。
FIG. 1 is a schematic sectional view of a wafer/prober according to an embodiment of the present invention. 1 is a probe card, 2 is a probe needle, 3 is a polishing plate, 4
5 is a polishing table, 5 is a support part, 6 is a sea urchin/\, 7 is a wafer chuck, 8 is a Z stage, and 9 is a wafer stage.

Claims (1)

【特許請求の範囲】[Claims] 研磨部の異なる場所へプローブ針を突き当てることによ
りプローブ針の研磨を行う手段を有するプローブ装置。
A probe device having means for polishing a probe needle by abutting the probe needle against different locations of a polishing section.
JP12452684A 1984-06-19 1984-06-19 Probe device Pending JPS614969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12452684A JPS614969A (en) 1984-06-19 1984-06-19 Probe device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12452684A JPS614969A (en) 1984-06-19 1984-06-19 Probe device

Publications (1)

Publication Number Publication Date
JPS614969A true JPS614969A (en) 1986-01-10

Family

ID=14887661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12452684A Pending JPS614969A (en) 1984-06-19 1984-06-19 Probe device

Country Status (1)

Country Link
JP (1) JPS614969A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347278U (en) * 1986-09-10 1988-03-30
JPS64742A (en) * 1987-03-24 1989-01-05 Tokyo Electron Ltd Probing device
JPH01276191A (en) * 1988-04-28 1989-11-06 Tokyo Electron Ltd Liquid crystal display body inspecting instrument
US6024629A (en) * 1997-01-22 2000-02-15 Tokyo Electron Limited Probe apparatus and a method for polishing a probe
US6306187B1 (en) 1997-04-22 2001-10-23 3M Innovative Properties Company Abrasive material for the needle point of a probe card

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347278U (en) * 1986-09-10 1988-03-30
JPS64742A (en) * 1987-03-24 1989-01-05 Tokyo Electron Ltd Probing device
JPH01276191A (en) * 1988-04-28 1989-11-06 Tokyo Electron Ltd Liquid crystal display body inspecting instrument
US6024629A (en) * 1997-01-22 2000-02-15 Tokyo Electron Limited Probe apparatus and a method for polishing a probe
US6306187B1 (en) 1997-04-22 2001-10-23 3M Innovative Properties Company Abrasive material for the needle point of a probe card

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