JPS6152648A - 電子写真用高感度感光体 - Google Patents

電子写真用高感度感光体

Info

Publication number
JPS6152648A
JPS6152648A JP17543884A JP17543884A JPS6152648A JP S6152648 A JPS6152648 A JP S6152648A JP 17543884 A JP17543884 A JP 17543884A JP 17543884 A JP17543884 A JP 17543884A JP S6152648 A JPS6152648 A JP S6152648A
Authority
JP
Japan
Prior art keywords
layer
carrier
contact
selenium
concn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17543884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH032295B2 (cs
Inventor
Susumu Honma
奨 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP17543884A priority Critical patent/JPS6152648A/ja
Publication of JPS6152648A publication Critical patent/JPS6152648A/ja
Publication of JPH032295B2 publication Critical patent/JPH032295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP17543884A 1984-08-23 1984-08-23 電子写真用高感度感光体 Granted JPS6152648A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17543884A JPS6152648A (ja) 1984-08-23 1984-08-23 電子写真用高感度感光体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17543884A JPS6152648A (ja) 1984-08-23 1984-08-23 電子写真用高感度感光体

Publications (2)

Publication Number Publication Date
JPS6152648A true JPS6152648A (ja) 1986-03-15
JPH032295B2 JPH032295B2 (cs) 1991-01-14

Family

ID=15996091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17543884A Granted JPS6152648A (ja) 1984-08-23 1984-08-23 電子写真用高感度感光体

Country Status (1)

Country Link
JP (1) JPS6152648A (cs)

Also Published As

Publication number Publication date
JPH032295B2 (cs) 1991-01-14

Similar Documents

Publication Publication Date Title
US4720444A (en) Layered amorphous silicon alloy photoconductive electrostatographic imaging members with p, n multijunctions
US4760005A (en) Amorphous silicon imaging members with barrier layers
US4365013A (en) Electrophotographic member
US4666806A (en) Overcoated amorphous silicon imaging members
US4705733A (en) Member having light receiving layer and substrate with overlapping subprojections
US4613556A (en) Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
JPS6152648A (ja) 電子写真用高感度感光体
US4672015A (en) Electrophotographic member having multilayered amorphous silicon photosensitive member
US4379820A (en) Electrophotographic photoconductor of halogen-doped Se-Te alloy layers
JPH0549107B2 (cs)
JPS5614241A (en) Electrophotographic receptor
Yamamoto et al. Electrophotographic Properties of RF Glow Discharge-Produced Amorphous Si: H Film
JPH07120953A (ja) 電子写真感光体およびそれを用いた画像形成方法
EP0070682A2 (en) Method of producing a semiconductor layer of amorphous silicon and a device including such a layer
JPS62148966A (ja) 電子写真用感光体
JPS6165253A (ja) 電子写真用感光体
Tateishi et al. Three-layer photoreceptor (Se-SeTe-Se) with high sensitivity in the long-wavelength region
JPH09246576A (ja) 半導体光電変換素子及びその製造方法
JPH01283569A (ja) 感光体構造
JP2632887B2 (ja) 光導電部材
Nazar Photoconduction in Si3N4 deposited on tungsten-coated silicon wafers
US4418136A (en) Electrophotographic element comprises arsenic selenide doped with Bi
JPH0241178B2 (cs)
JPH01204053A (ja) 感光体構造物
Yamamoto et al. Millimeter-Wave Photoconductivity and Donor State in N-Type InSb