JPS6186494A - Gas phase growth apparatus - Google Patents
Gas phase growth apparatusInfo
- Publication number
- JPS6186494A JPS6186494A JP20947484A JP20947484A JPS6186494A JP S6186494 A JPS6186494 A JP S6186494A JP 20947484 A JP20947484 A JP 20947484A JP 20947484 A JP20947484 A JP 20947484A JP S6186494 A JPS6186494 A JP S6186494A
- Authority
- JP
- Japan
- Prior art keywords
- bell jar
- base plate
- susceptor
- cooling fluid
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012809 cooling fluid Substances 0.000 claims abstract description 23
- 230000007246 mechanism Effects 0.000 claims abstract description 9
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 abstract description 11
- 230000003028 elevating effect Effects 0.000 abstract description 3
- 230000001174 ascending effect Effects 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 16
- 238000001816 cooling Methods 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明はシリコン等の半導体物質基板（以下ウェハとい
う）にシリコン結晶等を気相成長させるランプ加熱によ
るバレル型の気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field to which the Invention Pertains] The present invention relates to a barrel-type vapor phase growth apparatus using lamp heating for vapor phase growing silicon crystals and the like on a semiconductor material substrate (hereinafter referred to as a wafer) such as silicon.
従来実用化されているランプ加熱によるバレル型の気相
成長装置はサセプタを回転させる回転軸の駆動源が上方
にあり、この駆動源と共にサセプタを反応管お工びその
周囲に配列されているランプハウスに対して上昇させて
ウニノ・の出入を行なう工うになってｈるが回転部から
のゴミがウニノーに落下する欠点があり友。他方、回転
軸の駆動部を下方に設けたものも提案されているが、こ
の１式はウェハ出入のためベル形の反応管すなわちべル
ジャを上下動させる必要があるため、ベルジャ上部の構
造的な面からベルジャ頂部の冷却が行ない難（、このた
゛め、ベルジャ頂部にウオールデボが発生しこのウオー
ルデボがウェハに落下して良好な気相成長が不可能であ
るなどの欠点により実用化されていなかった。In the conventional barrel-type vapor phase growth apparatus using lamp heating, which has been put into practical use, the drive source for the rotating shaft that rotates the susceptor is located above, and together with this drive source, the susceptor is made into a reaction tube, and the lamp house is arranged around it. It is possible to move the unit in and out by lifting it up against the unit, but it has the disadvantage that dirt from the rotating parts falls onto the unit. On the other hand, a model in which the drive unit for the rotating shaft is installed below has been proposed, but this system requires the bell-shaped reaction tube, or bell jar, to be moved up and down to take in and out wafers, so the structure of the upper part of the bell jar has to be improved. Due to this, it was difficult to cool the top of the belljar (for this reason, it was not put into practical use due to drawbacks such as wall debos occurring at the top of the belljar, which fell onto the wafer, making good vapor phase growth impossible). .
本発明はこのような欠点を除去したものでその目的は、
サセプタ回転軸の駆動源を下方に設置する方式において
、ベルジャの開閉性を阻害することなく、ベルジャの頂
部に冷風を吹きつけてウオールデボを押えられるように
した気相成長装置を提供することにある。The present invention eliminates these drawbacks, and its purpose is to:
To provide a vapor phase growth apparatus which is capable of suppressing wall deformation by blowing cold air onto the top of a bell jar without interfering with the opening/closing performance of the bell jar in a method in which a drive source for a susceptor rotating shaft is installed below. .
本発明の気相成長装置は、ベースプレートと、同ベース
プレートを貫通して上方に伸びる回転軸と、同回転軸に
取付けられたバレル型のサセプタ組立体と、下端が前記
ベースプレートに密封可能になされ前記サセプタ組立体
の周囲に反応室を形成スルベルジャと、同ベルジャの°
側部外方を取巻いて位置しサセプタ組立体のサセプタに
対向すべ（設けられた複数のランプハウスと、同ランプ
ハウスの上部に位置し前記ベルジャの上部外方をおおう
冷却流体供給部と、同冷却流体供給部および前記ベルジ
ャをそれぞれ連結した昇降機構とからなることを特徴に
している。The vapor phase growth apparatus of the present invention includes a base plate, a rotating shaft extending upwardly through the base plate, a barrel-shaped susceptor assembly attached to the rotating shaft, and a barrel-shaped susceptor assembly whose lower end is sealable to the base plate. The reaction chamber is formed around the susceptor assembly, and the
a plurality of lamp houses located surrounding the outside of the lateral side and facing the susceptor of the susceptor assembly; a cooling fluid supply part located above the lamp house and covering the outside of the top of the bell jar; The cooling fluid supply unit and the bell jar are each connected to an elevating mechanism.
以下本発明の一実施例を示し之図について説明する。第
１図においてサセプタ組立体１１は複数枚の短冊状をし
たサセプタが多角形状に配意されると共に、軸心に対し
勾配を有しかつ上面および下面はフタ状体によりおおわ
れておりその外周には多数のウェハ１２が取付けである
。サセプタ組立体１１は上下のフタ状体に固着したセラ
ミックス等の非金属裂かつ中空の回転軸１３にニジ両方
向へ回転されるようになされており、その外周および上
方は石英製のベルジャ１４によりおおわれている。An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, the susceptor assembly 11 has a plurality of strip-shaped susceptors arranged in a polygonal shape, and has a slope with respect to the axis, and the upper and lower surfaces are covered with a lid-like body, and the outer periphery of the susceptor is A large number of wafers 12 are attached. The susceptor assembly 11 is rotated in both directions by a hollow rotating shaft 13 made of a non-metallic material such as ceramics fixed to the upper and lower lid-like bodies, and its outer periphery and upper part are covered with a bell jar 14 made of quartz. ing.
ベルジャ】４の下方にはこれと同心かつサセプタ組立体
１１０回転を妨げな込近接したわずかな隙間を有する位
置に石英製の円筒体１５があり、ベルジャ１４および円
筒体１５は共にステンレス銅調のペースグレート１６上
に密接した状態で載置されてｂる。なお円筒体】５はサ
セプタ組立体してベルジャ１４とサセプタ組立体１１お
よび円筒体１５により形成される空間を反応室といい、
回転軸１３はベースプレート】６を気密に貫通している
。ベルジャ１４の下側内周と円筒体】５の下側外周との
間にはベースプレート１６表面から八
金属イオンの放出を阻止するため石英リング１９Ａが敷
かれており、この石英リング１９Ａとベースプレート１
６には反応室のガスを外部に排出するための孔１９Ｂが
あけである。Below the bell jar 4, there is a cylindrical body 15 made of quartz, which is concentric with the susceptor assembly 110 and has a small gap in the vicinity of the susceptor assembly 110, and both the bell jar 14 and the cylindrical body 15 are made of stainless steel. They are placed in close contact on the pace grate 16. The cylindrical body 5 is a susceptor assembly, and the space formed by the bell jar 14, the susceptor assembly 11, and the cylindrical body 15 is called a reaction chamber.
The rotating shaft 13 passes through the base plate 6 in an airtight manner. A quartz ring 19A is placed between the lower inner periphery of the bell jar 14 and the lower outer periphery of the cylindrical body 5 in order to prevent the release of eight metal ions from the surface of the base plate 16.
6 is provided with a hole 19B for discharging gas from the reaction chamber to the outside.
回転軸１３の中心にはそれぞれ固定の内管１７および外
管１８の２重管が設けられ、内管１７からはＮ２或いは
Ｈ２のガスが上方に向って流れ外管１８は上端で複数（
図では２本のみ示しである）に分岐してノズル１８Ａに
なって下方にあるウェハ１１１７ｍ向って反応ガスが流
れるようになっている。なお反応ガスの流れの細部は後
述する。A double tube consisting of an inner tube 17 and an outer tube 18, each fixed, is provided at the center of the rotating shaft 13, and N2 or H2 gas flows upward from the inner tube 17, and the outer tube 18 has a plurality of (
The nozzle 18A branches into a nozzle 18A (only two are shown in the figure), and the reactive gas flows toward the wafer 1117m located below. Note that the details of the flow of the reaction gas will be described later.
ベルジャ１４の下部外周に汀、これを取口囲み、ベース
プレート１６の外周に配置されたペース２０とにエフベ
ルジャ１４側のみを開放した排気ダクト２１が設けられ
、この排気ダクト２１は第２図に示す排気管２２に接続
されている。排気ダクト２１上には、多数のランプ２３
を有するランプハウス２４が、第２図に示すように、ベ
ルジャ１４全取り囲んで配置さｎてめる。ランプハウス
２４の背面側にはＡ冷却流体供給部２５が形成さｆＬＳ
Ａ冷却流体供給部２５には不゛図示の送風機および冷却
機からの冷却空気が吹き込まれ、冷却窒を冷却するより
になっている。ペース２０＆Ｃｉ排気ダクト２１に隣接
して昇降および回転機構２８が設けてあり、同機構２８
は上端に腕２９が固着サレ、腕２９の先端は把持具３ｏ
にエフベルジャ１４の頂部に固着した把持部３１′Ｊｔ
離脱可能に把持している。また腕２９の先端は把持具３
２に工１）Ｂ冷却流体供給部３３を取付けている。、Ｂ
冷却流体供給部３３の下端はランプハウス２４の上面に
載置されると共に、その内壁３４には多数の孔３５があ
けられているためＡ冷却流体供給部２５と同様に冷却空
気がベルジャ】４の上部に吹きつけられる。ここでベル
ジャ１４とＢ冷却流体供給部３３とは腕２９に取付けら
れているため、同時に昇降可能であり、ベルジャ１４の
下面がノズル１８Ａの上方まで上昇した後は腕２９を旋
回させることによりベルジャ１４およびＢ冷却流体供給
２４は端部Ａお工びＢが互いに回動自在に連結され、下
側中央は切離されるようになっており、同図に点線で示
した位置に移動可能になっている。An exhaust duct 21 is provided on the outer periphery of the lower part of the bell jar 14, and an exhaust duct 21 that is open only on the side of the F-bell jar 14 is provided between the base plate 20, which surrounds the lower part of the bell jar 14, and is arranged on the outer periphery of the base plate 16.This exhaust duct 21 is shown in FIG. It is connected to the exhaust pipe 22. A large number of lamps 23 are installed on the exhaust duct 21.
As shown in FIG. 2, a lamp house 24 having a lamp house 24 is arranged to completely surround the bell jar 14. A cooling fluid supply section 25 is formed on the back side of the lamp house 24.
Cooling air from a blower and cooler (not shown) is blown into the A cooling fluid supply section 25 to cool the cooling nitrogen. A lifting and rotating mechanism 28 is provided adjacent to the Pace 20 & Ci exhaust duct 21.
The arm 29 is fixed to the upper end, and the tip of the arm 29 is the gripping tool 3o.
The grip part 31'Jt fixed to the top of the F-Verjar 14
It is held in a detachable manner. Also, the tip of the arm 29 is attached to the gripping tool 3.
Step 1) B cooling fluid supply section 33 is attached to 2. , B
The lower end of the cooling fluid supply section 33 is placed on the upper surface of the lamp house 24, and the inner wall 34 is provided with a number of holes 35, so that cooling air is supplied to the bell jar like the A cooling fluid supply section 25. sprayed onto the top of the Since the bell jar 14 and the B cooling fluid supply section 33 are attached to the arm 29, they can be raised and lowered at the same time, and after the lower surface of the bell jar 14 has risen above the nozzle 18A, the bell jar 14 can be rotated by rotating the arm 29. 14 and B cooling fluid supply 24, the ends A and B are rotatably connected to each other, and the lower center can be separated, so that they can be moved to the position shown by the dotted line in the figure. ing.
Ａお工びＢ冷却ス流体供給部２５お工び３３から吹き出
された冷却望気はベルジャ１４の外周およびランプ２３
を冷却しながら下降し、排気ダクト２１内に入った後回
の上方に示した排気管２２から外部に強制的に排出され
る。反応ガスの流れるノズル１８Ａは図に示すようにこ
の例では放射状［８本設けてあり、先端近くには下向き
の孔３６（第１図参照）が１個あけてあり、かつこの孔
３６は８本のノズル１８Ａの２本或りは４本を組にして
回転軸１３の軸心からの距離ｔ−変えることにより、細
心に対し勾配を有するサセプタ組立体１１上の欄心から
の距離の異なるウェハ１２の各々に対応して反応ガスが
噴出するようにしである。或いはこの傳成のほかノズル
１８Ａの２本を組にしてそれぞれの先漏近（に孔３６を
互いに向き合う形で傾斜して設けることにエリ、噴出し
た２つの反応ガスの流れが衝突して下向きの広いガス流
を形成するようにしても１９０
次に前述した実施例の動作ｔ−説明する。昇降等の機構
２８１Ｃエクペルジヤ１４とＢ冷却流体供給部３３ｆｃ
上昇させ、次いでランプ７％ウス２４ｔ−第２８にエリ
ベルジャ１４とＢ冷却流体供給部３３を下降させて第１
図の状態にする。この状態で内管１７と外管１８からＮ
２ガスを噴出して空気をパージし、空気のパージが終了
した後、Ｎ２ガスＶＣより前記Ｎ２ガスをパージし、次
いでランプ２３にエリ加熱する。加熱にエリウニノＳ１
２か所定温Ｉｆｆ達すると外管１８従ってノズル１８Ａ
からＮ２ガスと共にシラン等の反応ガスを噴出させるこ
とにニジ気相成長を行なう。The cooling air blown out from the cooling fluid supply section 25 and the cooling fluid supply section 33 is supplied to the outer periphery of the bell jar 14 and the lamp 23.
It descends while being cooled, enters the exhaust duct 21, and is then forcibly discharged to the outside through the exhaust pipe 22 shown above. As shown in the figure, the nozzles 18A through which the reaction gas flows are radial in this example. By combining two or four of the nozzles 18A and changing the distance t from the axis of the rotating shaft 13, wafers with different distances from the column on the susceptor assembly 11 having a narrow slope can be produced. The reaction gas is ejected corresponding to each of the 12. Alternatively, in addition to this construction, it is also possible to make two nozzles 18A as a set and provide the holes 36 in each tip so that they face each other and are inclined, so that the two streams of ejected reaction gas collide and flow downward. Even if a wide gas flow is formed, 190 Next, the operation of the above-mentioned embodiment will be explained.Mechanisms such as lifting and lowering 281CExpergear 14 and B cooling fluid supply section 33fc
Raise the lamp 7%, then lower the Eliberger 14 and the B cooling fluid supply section 33 to the 28th
Set it to the state shown in the figure. In this state, from the inner tube 17 and outer tube 18
After the air purge is completed, the N2 gas is purged from the N2 gas VC, and then the lamp 23 is heated. Eriunino S1 for heating
2 When the predetermined temperature Iff is reached, the outer tube 18 and therefore the nozzle 18A
Nitrogen vapor phase growth is performed by spouting a reactive gas such as silane together with N2 gas from the wafer.
このとき内管１７からはそのままＮ２ガスを噴出ζせる
ことにエリベルジャ］４の上部空間をＮ２ガスで充満せ
しめ、もってベルジャ】４の上部壁面の冷却と上部壁面
への反応ガスの接触を阻止する。そしてこれらのガスは
ベースプレート１６の穴１９Ｂから排出さ扛る。このと
きサセプタ組立体・Ｕ与とベースプレート１６の間に円
筒体】５があるためガスがサセプタ組立体Ｈの下部に回
り込んでゴミを舞い上げたり、ベルジャ】４内のガス流
を乱したりすることなく円滑に排出される。ランプ２３
による加熱と同時に送風機および冷却機からの冷却堅気
は、Ａお工びＢ冷却流体供給部２５お工び３３の孔２６
および３５を通ってベルジャ１４およびランプ２３に吹
きつけられ、ランプ２３とベルジャ１４を冷却した後ベ
ルジャ１４に沿って下降し、排気ダクト２１から排気管
２２にエリ強制的に排気される。この風量は石英ベルジ
ャ１４の大きさによるが数１０−７分から数１００ｒｒ
？／分と極めて大量であるが、排気ダクト２１はベルジ
ャ１４の下方を囲んで円周上に大きい次め排気抵抗は小
さく排気管２２から吸引することにより円滑な排気が可
能である。At this time, N2 gas is directly ejected from the inner tube 17 to fill the upper space of the bell jar 4 with N2 gas, thereby preventing cooling of the upper wall surface of the bell jar 4 and preventing contact of the reaction gas with the upper wall surface. . These gases are then exhausted from the holes 19B of the base plate 16. At this time, since there is a cylindrical body 5 between the susceptor assembly U and the base plate 16, gas may flow into the lower part of the susceptor assembly H, kicking up dust or disturbing the gas flow inside the bell jar 4. It is ejected smoothly without any damage. lamp 23
At the same time as cooling air from the blower and cooler,
and 35 onto the bell jar 14 and lamp 23 , and after cooling the lamp 23 and bell jar 14 , it descends along the bell jar 14 and is forcibly exhausted from the exhaust duct 21 to the exhaust pipe 22 . This air volume depends on the size of the quartz belljar 14, but it ranges from several 10-7 to several 100rr.
? Although the amount of air is extremely large at 1/min, the exhaust duct 21 surrounds the lower part of the bell jar 14 and has a large circumference, so the exhaust resistance is small and suction from the exhaust pipe 22 allows smooth exhaust.
一定時間気相成長が行われた後ランプ２３を消して加熱
を停止すると共に、両管１７および１８からＮ２ガスの
みを噴出させて反応ガスのパージを行いながらベルジャ
１４を介してウェハ１２を冷却し、次いでＮ２がスを停
止してＮ２ガスを噴出することにエリベルジャ１４内ｉ
Ｎ２ガスにするＵ最後にベルジャ１４等を昇降等の機構
２８により上昇させると共に、ランプハウス２４を開い
てウェハ１２を取り出せば一連の気相成長作業は終了す
る。なおベルジャ１４の洗浄が必要な場合はベルジャ１
４を上昇後昇降および回転機構２８により側方へ旋回さ
せた後、下降京せて台（図示せず）上に着床させ、ベル
ジャ】４を把持具３０から離脱してＭ洗浄する。After vapor phase growth has been performed for a certain period of time, the lamp 23 is turned off to stop heating, and the wafer 12 is cooled down via the bell jar 14 while purging the reaction gas by blowing out only N2 gas from both tubes 17 and 18. Then, the N2 gas is stopped and the N2 gas is spouted out.
Finally, the bell jar 14 and the like are raised by a lifting mechanism 28, and the lamp house 24 is opened to take out the wafer 12, thereby completing the series of vapor phase growth operations. In addition, if it is necessary to clean the bell jar 14, use the bell jar 1.
After rising, the bell jar 4 is rotated to the side by the lifting/lowering and rotating mechanism 28, and then lowered and landed on a stand (not shown), and the bell jar 4 is removed from the gripper 30 and cleaned.
本発明の気相成長装置は以上説明した工うに、ベースプ
レートを貫通して上方に伸びる回転軸に堰付けたバレル
型のサセプタ組立体と、このサセプタ組立体の周囲に反
応室を形成するべルジャと、ベルジャ側部外方を取巻く
ランプハウスと、ランプハウスの上部に位置してベルジ
ャの上部外方を冷却するＢ冷却流体供給部と、このＢ冷
却流体供給部とベルジャをそれぞれ連結した昇降機構等
を主な溝底要件にしている。As explained above, the vapor phase growth apparatus of the present invention includes a barrel-shaped susceptor assembly that is dammed on a rotating shaft that extends upward through a base plate, and a bell jar that forms a reaction chamber around the susceptor assembly. , a lamp house surrounding the outside of the side of the bell jar, a cooling fluid supply section B located at the top of the lamp house to cool the outside of the top of the bell jar, and a lifting mechanism that connects the cooling fluid supply section B and the bell jar, respectively. etc. are the main groove bottom requirements.
この溝底にエフサセプタ組立体を回転させる回転軸の駆
動源は下刃にあるため回転部からのゴミの落下はな（な
ると共に、ベルジャの側面はもちろん上部がＢ冷却流体
供給部からの冷風によって冷却されウオールデボの発生
がなくなって良好な気相成長が行われるようになり庭。Since the driving source of the rotating shaft that rotates the F-Saceptor assembly at the bottom of this groove is located in the lower blade, dirt does not fall from the rotating part (and the upper part as well as the sides of the bell jar are affected by the cold air from the cooling fluid supply part B). The garden is cooled and no wall deformation occurs, allowing good vapor phase growth to take place.
なお、Ｂ冷却流体供給部はベルジャと共に昇降されるた
め、操作は特に複雑にならず、またＢ冷却流体供給部に
よりベルジャ上方のし中光が行なわれるため、人や装置
に対する環境を改善することもできる。In addition, since the B cooling fluid supply section is raised and lowered together with the bell jar, the operation is not particularly complicated, and since the B cooling fluid supply section illuminates the upper part of the bell jar, the environment for people and equipment is improved. You can also do it.
図は本発明の一実施例を示し第１図は断百図、第２図は
第１図の２−２ｉ断面図である。
１１・・・サセプタ組立体、１２・・・ウェハ、１３・
・・回転軸、１４・・・ベルジャ、１５・・・円筒体、
１６・・・ベースプレート、］７・・・内管、１８・・
・外管、２３・・・ランプ、２４・・・ランプハウス、
２５．３３・・・冷却流体供給部、２８・・・昇降およ
び回転機構。The drawings show an embodiment of the present invention, and FIG. 1 is a sectional view, and FIG. 2 is a sectional view taken along line 2-2i in FIG. 11... Susceptor assembly, 12... Wafer, 13...
... Rotating shaft, 14... Bell jar, 15... Cylindrical body,
16... Base plate, ]7... Inner tube, 18...
・Outer tube, 23... lamp, 24... lamp house,
25.33...Cooling fluid supply unit, 28...Elevating and rotating mechanism.
Claims (1)
方に伸びる回転軸と、同回転軸に取付けられたバレル型
のサセプタ組立体と、下端が前記ベースプレートに密封
可能になされ前記サセプタ組立体の周囲に反応室を形成
するべルジャと、同ベルジャの側部外方を取巻いて位置
しサセプタ組立体のサセプタに対向すべく設けられた複
数のランプハウスと、同ランプハウスの上部に位置し前
記ベルジャの上部外方をおおう冷却流体供給部と、同冷
却流体供給部および前記ベルジャをそれぞれ連結した昇
降機構とからなる気相成長装置。 ２、一部のランプハウスが外方へ開き得るように取付け
られていることを特徴とする特許請求の範囲第１項記載
の気相成長装置。 ３、ベースプレートとランプハウスの間がベルジャ周囲
に対する排気ダクトを形成するように構成されているこ
とを特徴とする特許請求の範囲第１または２項記載の気
相成長装置。[Scope of Claims] 1. A base plate, a rotating shaft extending upward through the base plate, a barrel-shaped susceptor assembly attached to the rotating shaft, and a lower end of the susceptor whose lower end is sealable to the base plate. A bell jar forming a reaction chamber around the assembly, a plurality of lamp houses located around the outside of the side of the bell jar and provided to face the susceptor of the susceptor assembly, and an upper part of the lamp house. A vapor phase growth apparatus comprising a cooling fluid supply section located at and covering the outside of the upper part of the bell jar, and a lifting mechanism that connects the cooling fluid supply section and the bell jar, respectively. 2. The vapor phase growth apparatus according to claim 1, wherein a part of the lamp house is installed so as to be able to open outward. 3. The vapor phase growth apparatus according to claim 1 or 2, wherein the space between the base plate and the lamp house is configured to form an exhaust duct around the bell jar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20947484A JPH0249279B2 (en) | 1984-10-05 | 1984-10-05 | KISOSEICHOSOCHI |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20947484A JPH0249279B2 (en) | 1984-10-05 | 1984-10-05 | KISOSEICHOSOCHI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6186494A true JPS6186494A (en) | 1986-05-01 |
| JPH0249279B2 JPH0249279B2 (en) | 1990-10-29 |
Family
ID=16573448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20947484A Expired - Lifetime JPH0249279B2 (en) | 1984-10-05 | 1984-10-05 | KISOSEICHOSOCHI |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0249279B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318079A (en) * | 1986-07-10 | 1988-01-25 | Toshiba Corp | Method and apparatus for forming thin film |
| US20100269754A1 (en) * | 2009-04-28 | 2010-10-28 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
-
1984
- 1984-10-05 JP JP20947484A patent/JPH0249279B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318079A (en) * | 1986-07-10 | 1988-01-25 | Toshiba Corp | Method and apparatus for forming thin film |
| US20100269754A1 (en) * | 2009-04-28 | 2010-10-28 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
| US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0249279B2 (en) | 1990-10-29 |
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