JPS618938A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To contrive the improvement in the quality of semiconductor elements by a method wherein the semiconductor element are stuck to a tape for a cushion after the elements are polished to the predetermined thickness and after dicing, said tape is extended to divide and separate the elements for making a measurement of electric characteristics, thereby eliminating a damage. CONSTITUTION:A wafer which has been completed diffusion and attachment of electrodes is prepared. Next, this is polished into a wafer 2 of the predetermined thickness and it is stuck to a thermoelastic adhesive tape 22. Then that is divided into semiconductor elements so that the separated semiconductor elements 21 are arranged on and supported by the extended tape 22. A characteristics measuring head 23 is positioned in order and brought in contact with the elements. Then these are energized to do check on the electric characteristics. For the measurement, the characteristics measuring head 23 brings its contact pin in elastic contact with the electrodes of the semiconductor elements. Next, the semiconductor elements are detached from the sheet and thus the semiconductor 21 can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a semiconductor device, and is particularly applied to a processing step after a semiconductor wafer is provided with active regions, electrodes, etc.

[Technical background of the invention and its problems] In the conventional manufacturing method of semiconductor devices, after active regions, electrodes, etc. are formed on a semiconductor wafer, electrical characteristics measurement, thinning of the semiconductor wafer, and adhesive Semiconductor elements were obtained through various processes such as pasting onto a sheet, dicing, dividing into semiconductor elements, and peeling from the sheet.
This is shown in steps 101 to 108 in the figure and by FIG. 1. First, a wafer in which impurity diffusion has been performed on one surface of a semiconductor wafer (hereinafter abbreviated as wafer) to form a part of an active region, an insulating film, electrodes, electrodes, etc. is used as a starting material, and this is used as a starting material. 21! Shown in m. In addition, in FIG. 2 (a) showing the upper surface of Ueno, the electric sand (lla, lla...) on the upper surface of the semiconductor elements (11, 11...) that are formed in large numbers in alignment in this Ueno circle is shown. are omitted from illustration and are shown in FIGS. 3(b) and 3(c). Here, wafer/(1) is formed to have a thickness of about 600 μm, so it has high mechanical strength, and since the semiconductor elements are arranged in line according to the mask alignment, it is electrically A socket for measuring characteristics (see Figure 3 (see TS6)) is brought into contact with the detected defective element by the input force and marked.The socket is formed on the periphery of the main surface of the semiconductor element. It has a contact needle ((12a) Fig. 4) arranged to make elastic contact with each of the electrodes at the same time, and is adapted to apply a measurement voltage to the electrodes of the semiconductor element to perform a predetermined measurement. .

Next, steps (103) to (108) shown in FIG.
) will be explained with reference to FIG.

Step 103 is to polish the substrate (1) to reduce the board thickness from 600 μm to 200-350 μm (Fig. 5(b)).
.

Step 104 is to attach the substrate (1) to the thermoplastic adhesive tape 4 (FIG. 5(C)).

In step 105, the substrate (1) is diced (see Fig. 5).
C)).

In step 106, the substrate (1) attached to the adhesive tape (I7J) is divided by heating and expanding the adhesive tape (FIG. 5(d)).

Step 107 is to divide the adhesive tape into pieces and stick them onto the hot water.
Good, 4-way (II, 11-) somewhat. Kao 7, Rabari 11m. Note that at this time, the step 102
Semiconductor elements with markings are sorted by the method.

[Problems with the Background Art] In the conventional method described above, electrical characteristics are measured using thick rolls of wafers in order to prevent cracking when the wafers are subjected to various treatments, but the subsequent steps such as polishing and dicing are As the process goes through this process, good semiconductor devices may be destroyed, or the appearance may be scratched or damaged.
For example, there may be serious problems in terms of quality, such as scratches or scratches.

As a recent trend, efforts are being made to reduce the size of semiconductor elements as semiconductor devices become smaller. For this reason, the dicing width (distance between adjacent semiconductor elements) is generally 30 μm.
m, but this is the minimum dimension of tI'i for measuring the electrical characteristics of a semiconductor element, and it was impossible to measure the electrical characteristics by bringing them closer than this.

[Purpose of the Invention] This invention has been made to improve the above-mentioned conventional problems, and provides a method for manufacturing a semiconductor device that is compatible with the miniaturization of semiconductor devices [Summary of the Invention] According to the present invention The manufacturing method for semiconductor devices involves polishing a semiconductor wafer with a large number of semiconductor devices formed thereon to the desired thickness of the semiconductor device, attaching it to a cushioning tape, dicing it, and then rolling out the tape. In this method, the semiconductor element is divided and separated and the electrical characteristics are measured.

[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings, and its differences from the conventional one.

Fig. 6 is a process diagram of one embodiment shown in accordance with Fig. 1 (conventional process diagram), and its main parts will be described in conjunction with Fig. 7 showing the actual situation. The same reference numerals are used in the drawings, and the description thereof will be omitted.

Diffusion by step 101 1. A completed wafer with electrodes is prepared, and then it is heated to a predetermined H2 in step 203.
The wafer (2) is polished to a thickness of 50 to 300 pm (FIG. 7(a)) and is attached to a thermoplastic adhesive tape (2) in step 204 (FIG. 7(b)). -75
0 (product model name, made by Nitto Kogyo) d thickness is 800±100μ
m and has good cushioning properties.

Then step 105. Step 106 (Figure 7(C), (
d) Divide into semiconductor elements by ). The semiconductor elements (21, 21...
・) becomes array-supported.

In the above state, as shown in FIG. 3(-), a characteristic measuring head is sequentially positioned and brought into contact with each semiconductor element, and the semiconductor element is energized to check its electrical characteristics. Note that the characteristic measuring head (231 is a contact needle (231) as shown in FIG. 3(b)).
23a, 23a...) as the electrodes (ll) of the semiconductor element.
a, lla...) to perform measurements.

Then, in Step 107, the semiconductor element is peeled off from the sheet to obtain the semiconductor element (21, 2L...) in Step 108. There is a significant advantage that the spacing between the electrodes of a semiconductor device can be made as close as possible.Next,
Since the electrical characteristics are measured after polishing and dicing the semiconductor wafer, good semiconductor devices are not damaged by polishing, dicing, etc. as is the case with conventional methods, and the quality of semiconductor devices can be improved. There are advantages.

[Brief explanation of drawings]

Figure 1 is a block diagram showing the steps of a conventional semiconductor device manufacturing method, Figure 2 shows a semiconductor wafer, figure (a) is a front view, figure (b) is a side view, and figure (c) is a semiconductor element. 3 is a side view for explaining the measurement of electrical characteristics of a semiconductor element, FIG. 4 is a diagram of the measurement head, and FIGS.
(d) is a side view showing the main parts of the manufacturing process of a semiconductor element, and FIG. 6 is a side view of one embodiment of the σ semiconductor deviation. 2 Semiconductor wafer g lla, lla... Semiconductor element electrode 21 Semiconductor element 22 Adhesive tape

Claims (1)

[Claims] a step of etching a semiconductor wafer on which an active region, electrodes, etc. have been formed to a predetermined thickness; then a step of attaching the etched surface to an adhesive sheet to hold the wafer on the adhesive sheet; A method for manufacturing a semiconductor device, characterized by the steps of cutting and dividing into semiconductor devices, spreading the adhesive sheet to separate the semiconductor devices from each other, and measuring the electrical characteristics of the divided semiconductor devices.