JPS6194367U - - Google Patents
Info
- Publication number
- JPS6194367U JPS6194367U JP17923484U JP17923484U JPS6194367U JP S6194367 U JPS6194367 U JP S6194367U JP 17923484 U JP17923484 U JP 17923484U JP 17923484 U JP17923484 U JP 17923484U JP S6194367 U JPS6194367 U JP S6194367U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- laser
- semiconductor
- notches
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
Landscapes
- Optical Head (AREA)
Description
第１図は本考案半導体レーザの実施の一例を示
す正面断面図、第２図Ａ乃至Ｃは本考案半導体レ
ーザのその他の各別の実施例を示す斜視図、第３
図乃至第７図は背景技術とその問題点を説明する
ためのもので、第３図は光学式ヘツドの概略を示
す配置図、第４図及び第５図は光学式ヘツドに用
いられた半導体レーザの一例を示す正面図、第６
図はタンジエンシヤルスキユー角の変化に対する
トラツキングエラー信号のレベル変化を示す曲線
図、第７図は干渉の説明に供する線図である。
符号の説明、１……半導体基板、１４……発光
部、１５，１５ａ，１５ｂ……切欠。
FIG. 1 is a front cross-sectional view showing an example of the semiconductor laser of the present invention, FIGS. 2A to C are perspective views showing other embodiments of the semiconductor laser of the present invention, and FIG.
Figures 7 to 7 are for explaining the background art and its problems. Figure 3 is a layout diagram showing the outline of an optical head, and Figures 4 and 5 are semiconductors used in the optical head. Front view showing an example of a laser, No. 6
The figure is a curve diagram showing changes in the level of the tracking error signal with respect to changes in the tangential skew angle, and FIG. 7 is a diagram used to explain interference. Explanation of symbols: 1...Semiconductor substrate, 14...Light emitting section, 15, 15a, 15b...Notch.
Claims (1)
なくともレーザビーム出射端部に、半導体基板の
活性層に近い側の表面から発光部の両側に位置し
た戻り光入射部に至る深さを有する一対の切欠を
形成してなることを特徴とする半導体レーザ。 A pair of notches are formed at least at the laser beam emitting end of the semiconductor substrate on which the laser diode is formed, each having a depth extending from the surface of the semiconductor substrate closer to the active layer to the return light incident portions located on both sides of the light emitting portion. A semiconductor laser characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17923484U JPS6194367U (en) | 1984-11-26 | 1984-11-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17923484U JPS6194367U (en) | 1984-11-26 | 1984-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6194367U true JPS6194367U (en) | 1986-06-18 |
Family
ID=30736795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17923484U Pending JPS6194367U (en) | 1984-11-26 | 1984-11-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6194367U (en) |
-
1984
- 1984-11-26 JP JP17923484U patent/JPS6194367U/ja active Pending