JPS62177972A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62177972A
JPS62177972A JP61018208A JP1820886A JPS62177972A JP S62177972 A JPS62177972 A JP S62177972A JP 61018208 A JP61018208 A JP 61018208A JP 1820886 A JP1820886 A JP 1820886A JP S62177972 A JPS62177972 A JP S62177972A
Authority
JP
Japan
Prior art keywords
layer
gaas
substrate
gate electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61018208A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325030B2 (2
Inventor
Hisao Nakajima
尚男 中島
Tatsuo Yokozuka
横塚　達男
Yoko Uchida
陽子 内田
Tadashi Narisawa
成沢　忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61018208A priority Critical patent/JPS62177972A/ja
Publication of JPS62177972A publication Critical patent/JPS62177972A/ja
Publication of JPH0325030B2 publication Critical patent/JPH0325030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP61018208A 1986-01-31 1986-01-31 半導体装置 Granted JPS62177972A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61018208A JPS62177972A (ja) 1986-01-31 1986-01-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61018208A JPS62177972A (ja) 1986-01-31 1986-01-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS62177972A true JPS62177972A (ja) 1987-08-04
JPH0325030B2 JPH0325030B2 (2) 1991-04-04

Family

ID=11965228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61018208A Granted JPS62177972A (ja) 1986-01-31 1986-01-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS62177972A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186336A (ja) * 2004-11-30 2006-07-13 Matsushita Electric Ind Co Ltd 電界効果トランジスタ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006186336A (ja) * 2004-11-30 2006-07-13 Matsushita Electric Ind Co Ltd 電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPH0325030B2 (2) 1991-04-04

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term