JPS6221868B2 - - Google Patents
Info
- Publication number
- JPS6221868B2 JPS6221868B2 JP7952984A JP7952984A JPS6221868B2 JP S6221868 B2 JPS6221868 B2 JP S6221868B2 JP 7952984 A JP7952984 A JP 7952984A JP 7952984 A JP7952984 A JP 7952984A JP S6221868 B2 JPS6221868 B2 JP S6221868B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon carbide
- reaction
- silicon
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7952984A JPS60224783A (ja) | 1984-04-20 | 1984-04-20 | 炭化けい素被覆物の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7952984A JPS60224783A (ja) | 1984-04-20 | 1984-04-20 | 炭化けい素被覆物の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60224783A JPS60224783A (ja) | 1985-11-09 |
| JPS6221868B2 true JPS6221868B2 (da) | 1987-05-14 |
Family
ID=13692512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7952984A Granted JPS60224783A (ja) | 1984-04-20 | 1984-04-20 | 炭化けい素被覆物の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60224783A (da) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0211579B1 (en) * | 1985-08-02 | 1990-03-28 | Ngk Insulators, Ltd. | Method of making a silicon nitride sintered member |
| JPS6272583A (ja) * | 1985-09-26 | 1987-04-03 | 日本碍子株式会社 | 高温構造部材用炭化珪素焼結部材 |
| JPS62197370A (ja) * | 1986-02-20 | 1987-09-01 | 日本碍子株式会社 | 窒化珪素焼結体 |
| JP7261542B2 (ja) * | 2018-03-13 | 2023-04-20 | イビデン株式会社 | SiC被覆ケイ素質材の製造方法 |
-
1984
- 1984-04-20 JP JP7952984A patent/JPS60224783A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60224783A (ja) | 1985-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3168002B2 (ja) | 遷移金属窒化物の化学蒸着方法 | |
| JP3517934B2 (ja) | シリコン膜の形成方法 | |
| JPS6232157B2 (da) | ||
| JPH0710665A (ja) | 静電チャック付セラミックスヒーター | |
| JP2003332333A (ja) | 絶縁膜の低温蒸着法 | |
| JP4881153B2 (ja) | 水素化シリコンオキシカーバイド膜の生成方法。 | |
| EP0723600B1 (en) | Process for the preparation of silicon carbide films using single organosilicon compounds | |
| TWI275659B (en) | Method of forming Si-containing thin film using organic Si-containing compound having Si-Si bond | |
| TWI525213B (zh) | 矽層之製法 | |
| US5061514A (en) | Chemical vapor deposition (CVD) process for plasma depositing silicon carbide films onto a substrate | |
| JPS60224783A (ja) | 炭化けい素被覆物の製造方法 | |
| JP2723472B2 (ja) | 基体上に硼燐化シリカガラスを付着する装置および方法 | |
| JP2019112288A (ja) | 炭化ケイ素部材および半導体製造装置用部材 | |
| JPH0587171B2 (da) | ||
| Garcia et al. | Effect of substrate temperature on silicon Oxycarbide thin films prepared by catalytic chemical vapor deposition | |
| JP2585029B2 (ja) | シリコン窒化酸化膜の形成方法 | |
| JPS5988307A (ja) | 炭化けい素被覆物の製造方法 | |
| JP3857446B2 (ja) | SiC成形体 | |
| JPH1055971A (ja) | 半導体薄膜の堆積方法 | |
| CN104395986A (zh) | 碳化硅外延晶片及其制造方法 | |
| JP2001262346A (ja) | ピンホ−ルを低減したSiC被覆黒鉛部材の製法 | |
| JPS63256596A (ja) | ダイヤモンドの気相合成法 | |
| JPS64323B2 (da) | ||
| JP2681481B2 (ja) | シリコン酸化膜の形成方法 | |
| JPS60234973A (ja) | 窒化けい素薄膜の製造方法 |