JPS62219945A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number: JPS62219945A
Authority: JP; Japan
Prior art keywords: film; metal; insulating film; opening; tungsten
Prior art date: 1986-03-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP6198186A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0582968B2 (fr

Inventor

Kyoichi Suguro

恭一須黒

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-03-22

Filing date

1986-03-22

Publication date

1987-09-28

1986-03-22 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1986-03-22 Priority to JP6198186A priority Critical patent/JPS62219945A/ja

1987-09-28 Publication of JPS62219945A publication Critical patent/JPS62219945A/ja

1993-11-24 Publication of JPH0582968B2 publication Critical patent/JPH0582968B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 24
238000004519 manufacturing process Methods 0.000 title claims description 15
229910052751 metal Inorganic materials 0.000 claims abstract description 62
239000002184 metal Substances 0.000 claims abstract description 62
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 22
239000010937 tungsten Substances 0.000 claims abstract description 22
229910052721 tungsten Inorganic materials 0.000 claims abstract description 21
238000000034 method Methods 0.000 claims abstract description 19
239000010936 titanium Substances 0.000 claims abstract description 10
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
229910052719 titanium Inorganic materials 0.000 claims abstract description 8
238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
229910021332 silicide Inorganic materials 0.000 claims description 8
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
229910052750 molybdenum Inorganic materials 0.000 claims description 6
239000011733 molybdenum Substances 0.000 claims description 6
239000010955 niobium Substances 0.000 claims description 5
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
229910052758 niobium Inorganic materials 0.000 claims description 4
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
238000000151 deposition Methods 0.000 claims description 3
238000005530 etching Methods 0.000 claims description 3
150000004767 nitrides Chemical class 0.000 claims description 3
229910052715 tantalum Inorganic materials 0.000 claims description 3
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
229910052782 aluminium Inorganic materials 0.000 claims description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
239000004020 conductor Substances 0.000 claims description 2
229910052802 copper Inorganic materials 0.000 claims description 2
239000010949 copper Substances 0.000 claims description 2
229910052759 nickel Inorganic materials 0.000 claims description 2
229910052763 palladium Inorganic materials 0.000 claims description 2
229910052697 platinum Inorganic materials 0.000 claims description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
229910052735 hafnium Inorganic materials 0.000 claims 2
VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
229910052726 zirconium Inorganic materials 0.000 claims 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
229910052804 chromium Inorganic materials 0.000 claims 1
239000011651 chromium Substances 0.000 claims 1
229910001512 metal fluoride Inorganic materials 0.000 claims 1
150000002739 metals Chemical class 0.000 claims 1
229910021344 molybdenum silicide Inorganic materials 0.000 claims 1
229910021342 tungsten silicide Inorganic materials 0.000 claims 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
229910052710 silicon Inorganic materials 0.000 abstract description 12
239000010703 silicon Substances 0.000 abstract description 12
NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 abstract description 12
239000000758 substrate Substances 0.000 abstract description 11
229910052739 hydrogen Inorganic materials 0.000 abstract description 7
239000001257 hydrogen Substances 0.000 abstract description 7
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 4
229910052785 arsenic Inorganic materials 0.000 abstract description 3
238000001020 plasma etching Methods 0.000 abstract description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 2
229910003074 TiCl4 Inorganic materials 0.000 abstract 1
229910052681 coesite Inorganic materials 0.000 abstract 1
229910052906 cristobalite Inorganic materials 0.000 abstract 1
238000004299 exfoliation Methods 0.000 abstract 1
239000000377 silicon dioxide Substances 0.000 abstract 1
235000012239 silicon dioxide Nutrition 0.000 abstract 1
229910052682 stishovite Inorganic materials 0.000 abstract 1
XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 abstract 1
229910052905 tridymite Inorganic materials 0.000 abstract 1
150000002431 hydrogen Chemical class 0.000 description 6
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
229910000676 Si alloy Inorganic materials 0.000 description 4
239000007789 gas Substances 0.000 description 4
WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 3
239000002245 particle Substances 0.000 description 3
229910045601 alloy Inorganic materials 0.000 description 2
239000000956 alloy Substances 0.000 description 2
229910052786 argon Inorganic materials 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000012528 membrane Substances 0.000 description 2
238000000059 patterning Methods 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
239000000460 chlorine Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
238000001755 magnetron sputter deposition Methods 0.000 description 1
239000002075 main ingredient Substances 0.000 description 1
229920001296 polysiloxane Polymers 0.000 description 1
239000011148 porous material Substances 0.000 description 1
VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1

Landscapes

Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP6198186A 1986-03-22 1986-03-22 半導体装置の製造方法 Granted JPS62219945A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP6198186A JPS62219945A (ja)	1986-03-22	1986-03-22	半導体装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6198186A JPS62219945A (ja)	1986-03-22	1986-03-22	半導体装置の製造方法

Publications (2)

Publication Number	Publication Date
JPS62219945A true JPS62219945A (ja)	1987-09-28
JPH0582968B2 JPH0582968B2 (fr)	1993-11-24

Family

ID=13186865

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP6198186A Granted JPS62219945A (ja)	1986-03-22	1986-03-22	半導体装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPS62219945A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4999317A (en) *	1989-09-29	1991-03-12	At&T Bell Laboratories	Metallization processing
US5084415A (en) *	1989-10-23	1992-01-28	At&T Bell Laboratories	Metallization processing
US5149672A (en) *	1988-08-01	1992-09-22	Nadia Lifshitz	Process for fabricating integrated circuits having shallow junctions
US5700716A (en) *	1996-02-23	1997-12-23	Micron Technology, Inc.	Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57208161A (en) *	1981-06-18	1982-12-21	Fujitsu Ltd	Semiconductor device
JPS61147549A (ja) *	1984-12-21	1986-07-05	Toshiba Corp	半導体装置
JPS61248442A (ja) *	1985-04-26	1986-11-05	Hitachi Ltd	半導体素子用微細電極配線

1986
- 1986-03-22 JP JP6198186A patent/JPS62219945A/ja active Granted

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57208161A (en) *	1981-06-18	1982-12-21	Fujitsu Ltd	Semiconductor device
JPS61147549A (ja) *	1984-12-21	1986-07-05	Toshiba Corp	半導体装置
JPS61248442A (ja) *	1985-04-26	1986-11-05	Hitachi Ltd	半導体素子用微細電極配線

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5149672A (en) *	1988-08-01	1992-09-22	Nadia Lifshitz	Process for fabricating integrated circuits having shallow junctions
US4999317A (en) *	1989-09-29	1991-03-12	At&T Bell Laboratories	Metallization processing
US5084415A (en) *	1989-10-23	1992-01-28	At&T Bell Laboratories	Metallization processing
US5700716A (en) *	1996-02-23	1997-12-23	Micron Technology, Inc.	Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers
US6284651B1 (en)	1996-02-23	2001-09-04	Micron Technology, Inc.	Method for forming a contact having a diffusion barrier
US6433430B2 (en)	1996-02-23	2002-08-13	Micron Technology, Inc.	Contact structure having a diffusion barrier

Also Published As

Publication number	Publication date
JPH0582968B2 (fr)	1993-11-24

Legal Events

Date	Code	Title	Description
2006-03-22	EXPY	Cancellation because of completion of term

Publication	Publication Date	Title
KR910007108B1 (ko)	1991-09-18	알루미늄 또는 알루미늄 화합물로 구성된 적어도 2개의 도체층을 포함하는 반도체 집적회로 및 그 제조방법
JPS6110256A (ja)	1986-01-17	集積回路の接点孔への相互接続線の自動位置決め方法
US5723362A (en)	1998-03-03	Method of forming interconnection
JP3175721B2 (ja)	2001-06-11	半導体装置の製造方法
JP3027946B2 (ja)	2000-04-04	半導体装置およびその製造方法
JPS62206852A (ja)	1987-09-11	半導体装置の製造方法
JPH05129231A (ja)	1993-05-25	電極配線
JPH0582968B2 (fr)	1993-11-24
JP2542617B2 (ja)	1996-10-09	半導体装置の製造方法
JP2013128062A (ja)	2013-06-27	半導体装置の製造方法
JP2733396B2 (ja)	1998-03-30	半導体装置の製造方法
JP3488498B2 (ja)	2004-01-19	半導体装置における金属薄膜形成方法
JPH04120725A (ja)	1992-04-21	配線の形成方法
JPH07142411A (ja)	1995-06-02	半導体装置における金属薄膜形成方法
JPS6334954A (ja)	1988-02-15	半導体装置およびその製造方法
JP2660072B2 (ja)	1997-10-08	コンタクトの形成方法
JP2864624B2 (ja)	1999-03-03	コンタクト埋め込み金属構造体およびその製造方法
JP3335417B2 (ja)	2002-10-15	タングステン薄膜の形成方法
JP2706388B2 (ja)	1998-01-28	半導体装置の製造方法
JP3191477B2 (ja)	2001-07-23	配線構造およびその製造方法
GB2239661A (en)	1991-07-10	Semiconductor devices provided with two metallic films
JP3082230B2 (ja)	2000-08-28	配線の形成方法
JP3868043B2 (ja)	2007-01-17	タングステン窒化膜の製造方法及びこれを用いた金属配線製造方法
JPH0817762A (ja)	1996-01-19	半導体装置の製造方法
JPH0272629A (ja)	1990-03-12	半導体装置の製造方法