JPS62222653A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法Info
- Publication number
- JPS62222653A JPS62222653A JP25908985A JP25908985A JPS62222653A JP S62222653 A JPS62222653 A JP S62222653A JP 25908985 A JP25908985 A JP 25908985A JP 25908985 A JP25908985 A JP 25908985A JP S62222653 A JPS62222653 A JP S62222653A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- layer
- insulating film
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25908985A JPS62222653A (ja) | 1985-11-18 | 1985-11-18 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25908985A JPS62222653A (ja) | 1985-11-18 | 1985-11-18 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62222653A true JPS62222653A (ja) | 1987-09-30 |
| JPH0584666B2 JPH0584666B2 (2) | 1993-12-02 |
Family
ID=17329159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25908985A Granted JPS62222653A (ja) | 1985-11-18 | 1985-11-18 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62222653A (2) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100241529B1 (ko) * | 1996-12-12 | 2000-02-01 | 김영환 | 플라즈마를 이용한 반도체 소자의 금속배선 부식방지방법 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51150985A (en) * | 1975-06-19 | 1976-12-24 | Mitsubishi Electric Corp | Fabrication method of semiconductor device |
| JPS526795A (en) * | 1975-07-07 | 1977-01-19 | Mitsubishi Rayon Co Ltd | Process for producing polyester polymers |
| JPS5261964A (en) * | 1975-11-18 | 1977-05-21 | Seiko Epson Corp | Semiconductor device |
| JPS5630744A (en) * | 1979-08-21 | 1981-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS5648245A (en) * | 1979-09-29 | 1981-05-01 | Hidetoshi Tsuchida | Oxygen adsorbent/desorbent composed of coordination-type high molecular iron (2) porphirin complex as effective component |
-
1985
- 1985-11-18 JP JP25908985A patent/JPS62222653A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51150985A (en) * | 1975-06-19 | 1976-12-24 | Mitsubishi Electric Corp | Fabrication method of semiconductor device |
| JPS526795A (en) * | 1975-07-07 | 1977-01-19 | Mitsubishi Rayon Co Ltd | Process for producing polyester polymers |
| JPS5261964A (en) * | 1975-11-18 | 1977-05-21 | Seiko Epson Corp | Semiconductor device |
| JPS5630744A (en) * | 1979-08-21 | 1981-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS5648245A (en) * | 1979-09-29 | 1981-05-01 | Hidetoshi Tsuchida | Oxygen adsorbent/desorbent composed of coordination-type high molecular iron (2) porphirin complex as effective component |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100241529B1 (ko) * | 1996-12-12 | 2000-02-01 | 김영환 | 플라즈마를 이용한 반도체 소자의 금속배선 부식방지방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0584666B2 (2) | 1993-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02504092A (ja) | 積層回路における層間導電路の製造 | |
| JPH04290232A (ja) | 溝埋込み配線形成方法 | |
| JPS61114585A (ja) | 電気的結線構造及びその形成方法 | |
| US6455412B1 (en) | Semiconductor contact via structure and method | |
| JPH05343404A (ja) | 半導体装置 | |
| JPS62112323A (ja) | 半導体面に接触を形成する方法 | |
| JPS6146081A (ja) | ジヨセフソン接合素子の製造方法 | |
| JPS62222653A (ja) | 半導体装置及びその製造方法 | |
| JP3337758B2 (ja) | 半導体装置の製造方法 | |
| KR960004078B1 (ko) | 금속박막 적층구조를 사용한 콘택 형성방법 | |
| JPS60193336A (ja) | コンタクト電極の形成方法 | |
| JPH0334675B2 (2) | ||
| KR100214851B1 (ko) | 반도체 디바이스의 금속 배선 형성 방법 | |
| JP3047422B2 (ja) | ゲート電極形成方法 | |
| JP3154124B2 (ja) | 配線の形成方法 | |
| JPH01230269A (ja) | 半導体集積回路装置 | |
| JPS641055B2 (2) | ||
| JPS6248898B2 (2) | ||
| JPH0380533A (ja) | 半導体装置の製造方法 | |
| JPS5841775B2 (ja) | ハンドウタイソウチノセイゾウホウホウ | |
| JPS6362104B2 (2) | ||
| JPS63237548A (ja) | 半導体装置の製造方法 | |
| JPH04303925A (ja) | 半導体装置の製造方法 | |
| JPS6143855B2 (2) | ||
| JPS63166246A (ja) | 半導体装置の層間接続方法 |