JPS6222458B2 - - Google Patents

Info

Publication number
JPS6222458B2
JPS6222458B2 JP54072177A JP7217779A JPS6222458B2 JP S6222458 B2 JPS6222458 B2 JP S6222458B2 JP 54072177 A JP54072177 A JP 54072177A JP 7217779 A JP7217779 A JP 7217779A JP S6222458 B2 JPS6222458 B2 JP S6222458B2
Authority
JP
Japan
Prior art keywords
base
emitter
regions
resistor
ballast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54072177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55165672A (en
Inventor
Yasutaka Nakatani
Shigeaki Nawata
Haruki Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7217779A priority Critical patent/JPS55165672A/ja
Publication of JPS55165672A publication Critical patent/JPS55165672A/ja
Publication of JPS6222458B2 publication Critical patent/JPS6222458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor

Landscapes

  • Bipolar Transistors (AREA)
JP7217779A 1979-06-11 1979-06-11 Semiconductor device Granted JPS55165672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7217779A JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7217779A JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165672A JPS55165672A (en) 1980-12-24
JPS6222458B2 true JPS6222458B2 (it) 1987-05-18

Family

ID=13481675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7217779A Granted JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165672A (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3035462A1 (de) * 1980-09-19 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Halbleiterelement
JPS62142356A (ja) * 1985-12-17 1987-06-25 Sanken Electric Co Ltd トランジスタ
JPS62298172A (ja) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd 半導体装置
JPH0658959B2 (ja) * 1987-01-29 1994-08-03 富士電機株式会社 ゲ−ト・タ−ン・オフ・サイリスタ
JP2524553Y2 (ja) * 1987-02-27 1997-02-05 三菱電機株式会社 電力用半導体素子
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5311354B2 (it) * 1973-02-09 1978-04-20

Also Published As

Publication number Publication date
JPS55165672A (en) 1980-12-24

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