JPS6226580B2 - - Google Patents
Info
- Publication number
- JPS6226580B2 JPS6226580B2 JP54142493A JP14249379A JPS6226580B2 JP S6226580 B2 JPS6226580 B2 JP S6226580B2 JP 54142493 A JP54142493 A JP 54142493A JP 14249379 A JP14249379 A JP 14249379A JP S6226580 B2 JPS6226580 B2 JP S6226580B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- glass
- emitter junction
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14249379A JPS5666045A (en) | 1979-11-02 | 1979-11-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14249379A JPS5666045A (en) | 1979-11-02 | 1979-11-02 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5666045A JPS5666045A (en) | 1981-06-04 |
| JPS6226580B2 true JPS6226580B2 (2) | 1987-06-09 |
Family
ID=15316603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14249379A Granted JPS5666045A (en) | 1979-11-02 | 1979-11-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5666045A (2) |
-
1979
- 1979-11-02 JP JP14249379A patent/JPS5666045A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5666045A (en) | 1981-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4009483A (en) | Implementation of surface sensitive semiconductor devices | |
| US4172260A (en) | Insulated gate field effect transistor with source field shield extending over multiple region channel | |
| US4963970A (en) | Vertical MOSFET device having protector | |
| US4660065A (en) | Hall effect device with surface potential shielding layer | |
| EP0217326A2 (en) | Semiconductor device with a high breakdown voltage | |
| JPS6156608B2 (2) | ||
| US4060827A (en) | Semiconductor device and a method of making the same | |
| US4520382A (en) | Semiconductor integrated circuit with inversion preventing electrode | |
| US4942446A (en) | Semiconductor device for switching, and the manufacturing method therefor | |
| EP0162165A2 (en) | A Hall effect device and method for fabricating such a device | |
| JPS6226580B2 (2) | ||
| GB1569726A (en) | Planar-type semiconductor device | |
| JPS6359257B2 (2) | ||
| US3874915A (en) | Silicon nitride on silicon oxide coatings for semiconductor devices | |
| US3887407A (en) | Method of manufacturing semiconductor device with nitride oxide double layer film | |
| JPS6290964A (ja) | 集積回路保護構造 | |
| JPS6048914B2 (ja) | 半導体装置 | |
| JPS5629335A (en) | Semicondutor device | |
| JP3132521B2 (ja) | 半導体装置 | |
| JPH0237112B2 (2) | ||
| JPH04180670A (ja) | 半導体装置 | |
| JPS583301Y2 (ja) | 半導体装置 | |
| JPH0521347B2 (2) | ||
| JPH0779157B2 (ja) | 半導体装置 | |
| JPH02254722A (ja) | 半導体装置 |