JPS6228579B2 - - Google Patents
Info
- Publication number
- JPS6228579B2 JPS6228579B2 JP54051232A JP5123279A JPS6228579B2 JP S6228579 B2 JPS6228579 B2 JP S6228579B2 JP 54051232 A JP54051232 A JP 54051232A JP 5123279 A JP5123279 A JP 5123279A JP S6228579 B2 JPS6228579 B2 JP S6228579B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- polycrystalline silicon
- region
- source
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
- H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Landscapes
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5123279A JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5123279A JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55143047A JPS55143047A (en) | 1980-11-08 |
| JPS6228579B2 true JPS6228579B2 (it) | 1987-06-22 |
Family
ID=12881191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5123279A Granted JPS55143047A (en) | 1979-04-25 | 1979-04-25 | Insulating separation method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55143047A (it) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972740A (ja) * | 1982-10-19 | 1984-04-24 | Nec Corp | 半導体集積回路装置およびその製造方法 |
| JPS6083348A (ja) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | 半導体集積回路装置 |
| US4968640A (en) * | 1987-02-10 | 1990-11-06 | Industrial Technology Research Institute | Isolation structures for integrated circuits |
| JPH04116932A (ja) * | 1990-09-07 | 1992-04-17 | Mitsubishi Electric Corp | 半導体装置 |
| KR0159532B1 (ko) * | 1991-12-24 | 1999-02-01 | 아이자와 스스무 | 반도체장치의 제조방법 및 반도체장치 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142982A (en) * | 1975-05-05 | 1976-12-08 | Intel Corp | Method of producing single crystal silicon ic |
-
1979
- 1979-04-25 JP JP5123279A patent/JPS55143047A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55143047A (en) | 1980-11-08 |
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