JPS6233332Y2 - - Google Patents

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Publication number
JPS6233332Y2
JPS6233332Y2 JP1375278U JP1375278U JPS6233332Y2 JP S6233332 Y2 JPS6233332 Y2 JP S6233332Y2 JP 1375278 U JP1375278 U JP 1375278U JP 1375278 U JP1375278 U JP 1375278U JP S6233332 Y2 JPS6233332 Y2 JP S6233332Y2
Authority
JP
Japan
Prior art keywords
heat dissipation
thin plate
dissipation fin
flat semiconductor
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1375278U
Other languages
Japanese (ja)
Other versions
JPS54118074U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1375278U priority Critical patent/JPS6233332Y2/ja
Publication of JPS54118074U publication Critical patent/JPS54118074U/ja
Application granted granted Critical
Publication of JPS6233332Y2 publication Critical patent/JPS6233332Y2/ja
Expired legal-status Critical Current

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Description

【考案の詳細な説明】 本考案は平形半導体素子等の放熱を目的として
使用する放熱フインの改良形に関する。
[Detailed Description of the Invention] The present invention relates to an improved type of heat dissipation fin used for the purpose of dissipating heat from flat semiconductor devices and the like.

第1図は従来形の放熱フインの構成図であり、
第1図aは正面図、第1図bはZZ断面図、第1
図cはYY断面図、第1図dはXX断面図である。
又、第3図は放熱フイン11と平形半導体素子9
と平形半導体素子9を加圧する目的で使用する2
本のシヤフト10とを組み合わした従来形スタツ
クの実施例であり、放熱フインの上端部には外部
接続用の導体12が接続されている。
Figure 1 is a configuration diagram of a conventional heat dissipation fin.
Figure 1a is a front view, Figure 1b is a ZZ sectional view,
Figure c is a YY sectional view, and Figure 1 d is a XX sectional view.
Further, FIG. 3 shows the heat dissipation fin 11 and the flat semiconductor element 9.
and 2 used for the purpose of pressurizing the flat semiconductor element 9.
This is an embodiment of a conventional stack combined with a book shaft 10, and a conductor 12 for external connection is connected to the upper end of the heat dissipation fin.

従来形は第1図aの如く、長方形の中心部に丸
棒2を通すために打ち抜かれた丸穴と、上下2ケ
所にシヤフト10を通すために打ち抜かれた半ダ
円径の穴とを有した薄板1、平形半導体素子9及
び薄板1を接合するために精度の高い機構が加工
を施した丸棒2、放熱フイン11の外部からくる
導体あるいは電線を接続するための穴を有した長
方体のベース3で構成されており、薄板1にはさ
らに第1図cの如く数枚を積み重ね、各薄板間を
等間隔にした構成が要求されるため、第1図dの
如く、数ケ所に突出部4を設けている。
As shown in Figure 1a, the conventional type has a round hole punched in the center of the rectangle to pass the round bar 2 through, and holes with a semicircular diameter punched in two places at the top and bottom to pass the shaft 10 through. a round bar 2 machined by a highly precise mechanism to join the flat semiconductor element 9 and the thin plate 1; It is composed of a rectangular base 3, and the thin plate 1 requires a structure in which several sheets are further stacked as shown in Figure 1c, with equal intervals between each thin plate. Projections 4 are provided at these locations.

従来形放熱フイン11はこれら上述の各部品薄
板1、丸棒2、ベース3を一体に組み合わせ、ロ
ウ材により固着し、形成したものである。しかし
ながら、従来形には次の様な欠点がある。第一に
第1図b,cで明らかな様に丸棒2の平形半導体
素子9との接合面14が熱抵抗等を考慮し、精度
の高い機械加工を施しているにもかかわらず、薄
板1及びベース3の面よりも突き出ているため、
放熱フイン11の組立時あるいは、輸送保管取り
扱い時等に接合面に傷をつけ易く、又場合によつ
ては傷を取り除くための機械加工が必要となる。
第二に第1図a,bの如く、薄板1とベース3と
の接合面が平坦であるために組み合わせ具合によ
つて、その部分にすきまが出来、ロウ付が完全に
行なわれない場合があり、又ベース3の丸棒2及
び薄板1に対する位置決めが困難であること。第
三に第一で述べた欠点を無くすために第1図dの
凸部分を高くするか、あるいはベース3の幅寸法
を広げ丸棒2の長さよりも広くする必要がある
が、前者は凸部の突出寸法は薄板1の厚さによつ
て制限を受ける。後者は材料費が高くつくこと
と、放熱フイン11を2Set重ねて使用する場合に
各々の丸棒2の素子接合面14の間にすきまが生
じる不具合がある。
The conventional heat dissipation fin 11 is formed by assembling the above-mentioned thin plate 1, round bar 2, and base 3 together and fixing them with brazing material. However, the conventional type has the following drawbacks. First, as is clear from Figures 1b and 1c, the bonding surface 14 of the round bar 2 with the flat semiconductor element 9 is a thin plate, even though it has been machined with high precision in consideration of thermal resistance etc. 1 and base 3 because it protrudes beyond the surface of
When assembling the heat dissipation fin 11 or during transportation, storage, and handling, the bonding surface is likely to be damaged, and machining may be required to remove the damage in some cases.
Second, as shown in Figure 1 a and b, since the joint surface between the thin plate 1 and the base 3 is flat, depending on how they are assembled, a gap may be created in that part and brazing may not be completed completely. Also, it is difficult to position the base 3 with respect to the round bar 2 and the thin plate 1. Thirdly, in order to eliminate the drawback mentioned in the first section, it is necessary to make the convex part shown in Fig. The protruding dimension of the portion is limited by the thickness of the thin plate 1. The latter has the disadvantage that the material cost is high and that when two sets of radiation fins 11 are used in a stacked manner, a gap is created between the element joint surfaces 14 of each round bar 2.

本考案の目的はこれら上述の欠点を除去した平
形半導体用放熱フインを提供することにある。
An object of the present invention is to provide a flat heat dissipation fin for semiconductors that eliminates the above-mentioned drawbacks.

第2図は本考案による放熱フインの構成図であ
り、第2図aは正面図、第2図bはWW断面図、
第2図cはVV断面図、第2図dはUU断面図であ
る。又第4図は従来形スタツク第3図と同様に放
熱フイン13、平形半導体素子9、シヤフト10
を組み合わした本考案によるスタツクの実施例で
あり、放熱フイン13の上端部には外部接続用の
導体12が接続されている。
Fig. 2 is a configuration diagram of the heat dissipation fin according to the present invention, Fig. 2a is a front view, Fig. 2b is a WW sectional view,
FIG. 2c is a VV sectional view, and FIG. 2d is a UU sectional view. Also, FIG. 4 shows a conventional stack, similar to FIG.
This is an embodiment of a stack according to the present invention that combines the above, and a conductor 12 for external connection is connected to the upper end of the heat dissipation fin 13.

本考案による放熱フイン13は第2図aの如
く、長方形の中心部に丸棒2を通すために打ち抜
かれた丸穴と上下2ケ所にシヤフト10を通すた
めに打ち抜かれた半ダ円径の穴とを有した薄板5
と第2図bの如く、長方形の押出材で薄板5との
組み合わせを容易にするため、薄板5の使用枚数
に合わした溝が彫られ、外部回路接続用穴15に
ロウ材の流れ込みを防ぐための穴16がえぐられ
ているベース7と、片側を段付きにした構造の丸
棒6で構成されており、さらに薄板5の半ダ円部
分はベース7の溝にくい込む構造になつている。
The heat dissipation fin 13 according to the present invention has a round hole punched in the center of the rectangle to pass the round rod 2 through, and a semi-circular diameter punched in two places above and below to pass the shaft 10. thin plate 5 with holes
As shown in FIG. 2b, the rectangular extruded material is made with grooves corresponding to the number of thin plates 5 to be used, in order to facilitate its combination with the thin plates 5, thereby preventing the brazing material from flowing into the external circuit connection holes 15. It consists of a base 7 with a hole 16 cut out therein, and a round bar 6 with a stepped structure on one side, and the semi-circular part of the thin plate 5 is structured to fit into a groove in the base 7. .

又第2図a,cの如く薄板5の数ケ所には薄板
5を数枚積み重ねた場合に各薄板間を等間隔に保
つため、又丸棒6の平形半導体素子9との接合面
14を保護するために第2図dの如く、薄板5の
一部をプレスで他の丸穴及びダ円穴と同時に加工
し、L形に折り曲げた構造としている。このL形
突出部8は平形半導体素子接合面14よりも突き
出ているため接合面14の傷が防止され、薄板
5、丸棒6、ベース7の位置決めが容易になり、
各部品の接合面へのロウ付もバランス良く行なわ
れることになる。
In addition, in several places on the thin plate 5 as shown in FIG. In order to protect it, a part of the thin plate 5 is machined with a press at the same time as other round holes and round holes, and bent into an L shape, as shown in FIG. 2d. Since this L-shaped protrusion 8 protrudes beyond the flat semiconductor element bonding surface 14, damage to the bonding surface 14 is prevented, and positioning of the thin plate 5, round bar 6, and base 7 is facilitated.
The brazing on the joining surfaces of each part will also be done in a well-balanced manner.

以上本考案の採用に伴ない従来形の放熱フイン
11比べ、組立作業時間が短縮化され、又素子接
合面14の傷防止により、製品の信頼性の向上を
計ることが出来る。
As described above, with the adoption of the present invention, the assembly time is shortened compared to the conventional heat dissipation fin 11, and the reliability of the product can be improved by preventing damage to the element bonding surface 14.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来形放熱フインの構成図であり、第
1図aは正面図、第1図bはZZ断面図、第1図
cはYY断面図、第1図dはXX断面図、又第2図
は本考案の一実施例を示す放熱フインの構成図で
あり、第2図aは正面図、第2図bはWW断面
図、第2図cはVV断面図、第2図dはUU断面
図、第3図は従来形の放熱フインを使用したスタ
ツクの構成図、第4図は本考案による放熱フイン
を使用したスタツクの構成図である。 1……従来形の薄板、2……従来形の丸棒、3
……従来形のベース、4……薄板1の突起部、5
……本考案の薄板、6……本考案の丸棒、7……
本考案のベース、8……薄板5の突起部、9……
平形半導体素子、10……シヤフト、11……従
来形の放熱フイン、12……外部接続導体、13
……本考案の放熱フイン、14……放熱フインの
平形半導体素接合面、15……外部回路接続用
穴。
Fig. 1 is a configuration diagram of a conventional heat dissipation fin, in which Fig. 1a is a front view, Fig. 1b is a ZZ sectional view, Fig. 1c is a YY sectional view, Fig. 1d is a XX sectional view, or Fig. 2 is a configuration diagram of a heat dissipation fin showing an embodiment of the present invention, Fig. 2a is a front view, Fig. 2b is a WW sectional view, Fig. 2c is a VV sectional view, and Fig. 2d is a is a UU sectional view, FIG. 3 is a configuration diagram of a stack using conventional heat dissipation fins, and FIG. 4 is a configuration diagram of a stack using heat dissipation fins according to the present invention. 1...Conventional thin plate, 2...Conventional round bar, 3
...Conventional base, 4...Protrusion of thin plate 1, 5
... Thin plate of the present invention, 6... Round bar of the present invention, 7...
Base of the present invention, 8... Protrusion of thin plate 5, 9...
Flat semiconductor element, 10... Shaft, 11... Conventional heat dissipation fin, 12... External connection conductor, 13
...The heat dissipation fin of the present invention, 14...The flat semiconductor element bonding surface of the heat dissipation fin, 15...The hole for external circuit connection.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 薄板と平形半導体素子接合用ボスおよび外部回
路接続用ベース等によつてロウ付構成された平形
半導体用放熱フインにおいて薄板の数ケ所をL形
状に突出させ、このL形突出部により薄板間の間
隔を保持すると共に、この突出部を平形半導体素
子接合面よりも突出させ、平形半導体素子接合面
を保護出来る様にしたことを特徴とした平形半導
体用放熱フイン。
In a heat dissipation fin for a flat semiconductor, which is constructed by brazing a thin plate, a boss for joining a flat semiconductor element, a base for connecting an external circuit, etc., several parts of the thin plate are protruded in an L shape, and the L-shaped protrusions reduce the distance between the thin plates. A heat dissipation fin for a flat semiconductor device, which is characterized in that the projecting portion is made to protrude beyond the bonding surface of the flat semiconductor device, thereby protecting the bonding surface of the flat semiconductor device.
JP1375278U 1978-02-08 1978-02-08 Expired JPS6233332Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1375278U JPS6233332Y2 (en) 1978-02-08 1978-02-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1375278U JPS6233332Y2 (en) 1978-02-08 1978-02-08

Publications (2)

Publication Number Publication Date
JPS54118074U JPS54118074U (en) 1979-08-18
JPS6233332Y2 true JPS6233332Y2 (en) 1987-08-26

Family

ID=28832416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1375278U Expired JPS6233332Y2 (en) 1978-02-08 1978-02-08

Country Status (1)

Country Link
JP (1) JPS6233332Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682767B2 (en) * 1989-07-07 1994-10-19 株式会社日本アルミ Heat sink manufacturing method

Also Published As

Publication number Publication date
JPS54118074U (en) 1979-08-18

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