JPS6233348A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS6233348A JPS6233348A JP60172647A JP17264785A JPS6233348A JP S6233348 A JPS6233348 A JP S6233348A JP 60172647 A JP60172647 A JP 60172647A JP 17264785 A JP17264785 A JP 17264785A JP S6233348 A JPS6233348 A JP S6233348A
- Authority
- JP
- Japan
- Prior art keywords
- fluoride
- substrate
- recording medium
- metal
- chalcogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 21
- -1 chalcogen fluoride Chemical class 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 238000005546 reactive sputtering Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 150000001787 chalcogens Chemical class 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 21
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 6
- 229920005668 polycarbonate resin Polymers 0.000 abstract description 6
- 239000004431 polycarbonate resin Substances 0.000 abstract description 6
- 150000002739 metals Chemical class 0.000 abstract description 4
- 229910052714 tellurium Inorganic materials 0.000 abstract description 4
- 229910018152 SeF6 Inorganic materials 0.000 abstract description 3
- LMDVZDMBPZVAIV-UHFFFAOYSA-N selenium hexafluoride Chemical compound F[Se](F)(F)(F)(F)F LMDVZDMBPZVAIV-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004925 Acrylic resin Substances 0.000 abstract description 2
- 229920000178 Acrylic resin Polymers 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052797 bismuth Inorganic materials 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000004033 plastic Substances 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract description 2
- 229910052711 selenium Inorganic materials 0.000 abstract description 2
- PMOBWAXBGUSOPS-UHFFFAOYSA-N selenium tetrafluoride Chemical compound F[Se](F)(F)F PMOBWAXBGUSOPS-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- 150000002894 organic compounds Chemical class 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910001512 metal fluoride Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- YMUZFVVKDBZHGP-UHFFFAOYSA-N dimethyl telluride Chemical compound C[Te]C YMUZFVVKDBZHGP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はレーザビームを照射して局部的に加熱し、その
加熱部に穴もしくは凹部又は凸部を形成することによっ
て記録する光学記録用媒体に関するものである。Detailed Description of the Invention (Industrial Application Field) The present invention relates to an optical recording medium that records by locally heating it by irradiating it with a laser beam and forming holes, depressions, or projections in the heated area. It is related to.
（従来の技術）
基板上に形成された薄膜にレーザビームを照射して、ピ
ットを形成するようにした光学的記録用媒体として、従
来よりＴｅを使用することが知られている。Ｔｅは低融
点、低熱伝導度を有する為に、上記方法による記録にお
いて高い感度を示す。しかし、Ｔｅは酸化きれ易く、酸
化されると透明になシ記録が出来なくなるという問題が
ある。(Prior Art) It has been known to use Te as an optical recording medium in which pits are formed by irradiating a thin film formed on a substrate with a laser beam. Since Te has a low melting point and low thermal conductivity, it exhibits high sensitivity in recording by the above method. However, Te is easily oxidized, and when it is oxidized, it becomes transparent and recording cannot be performed.
の等がある（たとえば、特開昭Ｊ’ ｊ −Ｊ’／／θ
に号公報、特開昭ｊ１”−！ヌ３３／号公報度、特開昭
ｊ７−タ１３タダ号公報）。(For example, JP-A-Sho J' j −J'//θ
(Japanese Patent Application Laid-Open No. 1996-133, Japanese Patent Application Laid-open No. 13-13-1).
Ｔｅを合金化したものではＴｅ ０８合金が耐酸化性に
優れた膜として知られている。これはＴｅ、Ｓｅの蒸看
あるいはＴｅＳｅ合金ターゲットのスパッタリングによ
り得ることができる。Among alloys of Te, Te 08 alloy is known as a film with excellent oxidation resistance. This can be obtained by vaporizing Te or Se or sputtering a TeSe alloy target.
しかし、上記方法により得られたＴｅ Ｂｅ合金薄膜は
サブミクロンオーダーの結晶粒径をもち、書生信号のノ
イズが大きいという難点をもつ、この結晶粒径を小さく
する為に、工ｎ、 ８１１、ｐｂ。However, the TeBe alloy thin film obtained by the above method has a crystal grain size on the submicron order, and has the disadvantage that the noise of the writing signal is large. .
Ｂ１、Ｓｌ）等の第三元素の添加が効果があることが知
られている。（％公昭Ｊター３６３！６ ）本発明者ら
は、このようなＴｅを中心上する系についてさらに種々
検討した結果、経時安定性が優れかつ蒸着法、スパッタ
リング法で問題となる結晶粒径を抑えた記録媒体を得、
本発明に到達した。It is known that addition of a third element such as B1, Sl) is effective. (% Kosho Jter 363!6) As a result of further various studies on such a Te-centered system, the present inventors found that it has excellent stability over time and has a crystal grain size that is a problem with vapor deposition and sputtering methods. Obtain a low-cost recording medium,
We have arrived at the present invention.
すなわち、本発明の要旨は、基板上に金属の弗化カルコ
ゲンガスによる反応性スパッタリング膜を形成させてな
る光学的記録媒体にある。That is, the gist of the present invention is an optical recording medium in which a reactive sputtering film is formed using a metal fluoride chalcogen gas on a substrate.
（発明の構成）
ます、本発明に係る記録媒体の基板としては、ガラス、
アクリル樹脂、ポリカーボネート樹脂等のプラスチック
、又はアルミニウム等の金属が挙げられ、その厚みは一
般に／〜八へ朋程度から選ばれる。(Structure of the Invention) First, the substrate of the recording medium according to the present invention may be glass,
Examples include plastics such as acrylic resins and polycarbonate resins, and metals such as aluminum, and the thickness thereof is generally selected from about 1 to 8 inches.
本発明においては、この基板上に金属の弗化カルコゲン
ガスによる反応性スパッタリング族を形成させる。In the present invention, a reactive sputtering group is formed on this substrate using a metal fluoride chalcogen gas.
金属としてはＴｅ、Ｂｅ、 Ｂｉあるいはこれらの合金
等のターゲットが挙げられるが、好適には’ｒｅあるい
はＴｅを主体とする金属ターゲットが挙げられる。Examples of the metal include targets such as Te, Be, Bi, and alloys thereof, and preferably metal targets mainly composed of 're or Te.
用いる弗化カルコゲンガスとしては、ＳＦ６、ｓｅ、Ｆ
’、、ＳｅＦ４、ｓｅＦ、、Ｔｅａ、 等弗化カルコ
ゲナイドが挙けられるが、ＳｅＦ６ が一般的である。The fluoride chalcogen gas used is SF6, se, F
', SeF4, seF, Tea, and isofluorinated chalcogenides, but SeF6 is common.
本発明に係る記録用媒体は、例えば金檎ターゲットとし
てＴｅ、弗化カルコゲンとして８ｅＦ。The recording medium according to the present invention uses, for example, Te as the gold target and 8 eF as the chalcogen fluoride.
を用いる場合、真空容器中に８ｅＰ、及びＡｒを導入し
、Ｔｅターゲットをスパッタリングして、基板上にＴｅ
−ＳｅＦ、反応性スパッタリング族を形成させること
により得られる。When using 8eP and Ar in a vacuum chamber, a Te target is sputtered to deposit Te on the substrate.
-SeF, obtained by forming a reactive sputtering group.
スパッタリングに際しては、７ＩＩＪ周阪法、直流法又
はそれらのマグネトロン方式の常法によることができる
。Sputtering can be performed by the 7IIJ Shusaka method, the direct current method, or any of their conventional magnetron methods.
基板温度は、室温ないし基板の軟化点未満に保持される
。、薄膜の厚みは、通＠ｒｏＡ〜／μ程度、好ましくは
コ０θ〜／、０ＯＯＡ程度である。The substrate temperature is maintained at room temperature or below the softening point of the substrate. The thickness of the thin film is about 00A~/μ, preferably about 0θ~/0OOA.
本発明に係る６ｃ録媒体においては、反応性スパッタリ
ング膜として、さらＫｍ性向上のため、金属−弗化カル
コゲン−有機化合物膜とすることができる。In the 6c recording medium according to the present invention, a metal-chalcogen fluoride-organic compound film can be used as the reactive sputtering film to further improve Km properties.
すなわち、上記、弗化カルコゲンに加え、さらに有機化
合物をガス（有機ガスという）として真空′４器内に尋
人口Ｔｅターゲットをスパッタリングし、基板上に金属
−弗化カルコゲン・有機ガス反応性スパッタリング膜を
形成させることにより本発明に係る記録媒体を得ること
ができる。That is, in addition to the chalcogen fluoride mentioned above, an organic compound is used as a gas (referred to as an organic gas) to sputter a starch Te target in a vacuum chamber to form a metal-chalcogen fluoride/organic gas reactive sputtering film on the substrate. The recording medium according to the present invention can be obtained by forming the above.
上記第３の原料としての有機化合物としては、従来、有
機放ｘｉ合膜を形成させるのに用いられているものが好
適に１史用される。As the organic compound as the third raw material, those conventionally used to form an organic free-oxidation film are preferably used.
たとえば、好適にはベンゼン、スチレン、クロロベンゼ
ン等のベンゼンないしベンゼンｖＩ導体、ヘキサメチル
ジシロキサン等の含ケイ素化合物、エチレン等のオレフ
ィン化合物、メタン等のパラフィン類、ピリジン等のピ
リジン類、ジメチルホルムアミド等のアミド類のＮｆｉ
有化金化合物げられる。また、ジメチルテルル、ジエチ
ルテルル等のアルキル化金為等も使用しうる。For example, suitable compounds include benzene or benzene vI conductors such as benzene, styrene, and chlorobenzene, silicon-containing compounds such as hexamethyldisiloxane, olefin compounds such as ethylene, paraffins such as methane, pyridines such as pyridine, and dimethylformamide. Nfi of amides
Obtains ferrous gold compounds. Furthermore, alkylated metals such as dimethyl tellurium and diethyl tellurium can also be used.
以下、図面を参照して本発明をさらに詳細に説明する。Hereinafter, the present invention will be explained in more detail with reference to the drawings.
第１図は本発明に係る光学記録媒体の製造のための装置
の一例（（ａ） ：高周波（ＲＦ）法、（ｂ） ：直流
（ＤＣ）法）であり、図中（１３は反応容器、（２）は
弗化カルコゲン、（及び有機ガス）及びＡｒガス導入口
、（３）は基板、（４）は金属ターゲット、（５）は電
極、（６）はシャッター、（７）は排気口である。FIG. 1 shows an example of an apparatus for producing an optical recording medium according to the present invention ((a): radio frequency (RF) method, (b): direct current (DC) method), and in the figure (13 is a reaction vessel). , (2) is chalcogen fluoride, (and organic gas) and Ar gas inlet, (3) is substrate, (4) is metal target, (5) is electrode, (6) is shutter, (7) is exhaust It is the mouth.
金属−弗化カルコゲン反応性スパッタリング膜の作製は
反応容器（１）を／ ０−６Ｔｏｒｒ台まで排気した後
、弗化カルコゲンガス（及び有機ガス）及びＡｒガスを
導入口（２）よυ導入し反応容器の内圧をｊｘ １０−
３〜．ｔ ｘ ／（１７−１４Ｔｏｔｒとなるようこし
、金属ターゲット表面をプリスパッタリングする。安定
化したならシャッターを開け、基板上に金属−弗化カル
コゲン（−有機化合物）反応性スパッタリング族を形成
する。To prepare a metal-chalcogen fluoride reactive sputtering film, the reaction vessel (1) is evacuated to the /0-6 Torr range, and then chalcogen fluoride gas (and organic gas) and Ar gas are introduced through the inlet (2). The internal pressure of the reaction vessel is jx 10-
3~. The metal target surface is pre-sputtered so that t x /(17-14Totr). Once stabilized, the shutter is opened and a metal-fluoride chalcogen (-organic compound) reactive sputtering group is formed on the substrate.
本発明に係る記録用媒体は上記のように基板上に、上記
反応性スパッタリング族を形成させてなるか、さらに基
板と堆積膜の間に記録感度の向上、基板表面の改質、孔
形状の向上等（７） ｆｃめに下引層を設けることもで
き、さらには、記録媒体の保論のために堆積膜上に保強
族を設けることもできる。The recording medium according to the present invention is formed by forming the above-mentioned reactive sputtering group on the substrate as described above, or by further improving the recording sensitivity between the substrate and the deposited film, modifying the substrate surface, and improving the pore shape. Improvement etc. (7) An undercoat layer can be provided on the fc layer, and furthermore, a reinforcing layer can be provided on the deposited film to protect the recording medium.
得られた膜が半導体レーザの波長で十分な吸収を示すよ
うに、Ｔｅ等の金属含有量は！θ〜？！容量チ以上であ
るのが好オしい。The content of metals such as Te should be adjusted so that the obtained film exhibits sufficient absorption at the wavelength of the semiconductor laser! θ~? ! It is preferable that the capacity is greater than or equal to 1.
金属と弗化カルコゲンとの二成分糸の場合には残部すな
わちｊ〜夕θ容証％が弗化カルコゲンとなり、金属、弗
化カルコゲン及び有機化合物の三成分系の場合には残部
すなわち！〜！θ容量チ容量化カルコゲンと有機化合物
からなるのが艮い。この三成分糸の場合には有機化合物
が弗化カルコゲンよ）多くｆまれているのが好ましい。In the case of a bicomponent yarn of a metal and a chalcogen fluoride, the remainder, i.e., %, becomes chalcogen fluoride, and in the case of a ternary system of a metal, a chalcogen fluoride, and an organic compound, the remainder, i.e.! ~! The θ capacitor is composed of chalcogen and an organic compound. In the case of this ternary yarn, it is preferable that a large amount of organic compounds (such as chalcogen fluoride) be contained.
本発明に係る光学的記録用媒体は、光ディス１り記録媒
体として有用であり、レーザービームを照射して加熱す
ることにより、穴をあけ、もしくは凹又は凸部を形成さ
せて、記録を行なうことができる。The optical recording medium according to the present invention is useful as an optical disk recording medium, and recording is performed by making holes or forming concave or convex portions by irradiating and heating a laser beam. be able to.
（実施例）
以下、実施例により本発明を更に拝しく説明するが、本
発明が実施例のみにＰＲ定これるものでな込ことは勿論
のことである。(Examples) Hereinafter, the present invention will be explained in more detail with reference to Examples, but it goes without saying that the present invention cannot be promoted solely by the Examples.
実施例／
第１図（ａ）に示すスパッタリング装置を用いて、予め
洗浄したポリメタクリル酸メチル樹脂（ＰＭＭＡ）又は
ポリカーボネート樹脂（ｐｃ）基板を真空屋にセットし
て室内を： ／ Ｘ ／ ０−” Ｔｏｒｒまで排気し
た後、アルゴンをコｏ ｃａｍ、 ５１３ＦＱをｒ ｃ
ａｍ流して案内圧力を”：： ｊ ｘ ／ ０−” Ｔ
ｏｒｒにして極間距離を／Ｑｎ高周波（ＲＦ）パワーを
！θＷで／ｊ秒間反応性スパッタしたところ込ずれも膜
厚ニーＪ−ＯＡのｓｅ１？ｌ、 Ｔθスパッタ膜が得
られた。Example/ Using the sputtering apparatus shown in FIG. 1(a), a pre-cleaned polymethyl methacrylate resin (PMMA) or polycarbonate resin (PC) substrate was set in a vacuum chamber, and the interior was set as follows: / X / 0- ” After exhausting to Torr, argon was applied to the cam, and 513FQ was evacuated to rc.
am flow and guide pressure ":: j x / 0-" T
orr and the distance between poles/Qn radio frequency (RF) power! When reactive sputtering was performed at θW for /j seconds, the film thickness was as low as J-OA se1? 1, Tθ sputtered film was obtained.
この膜を♂３θｎｍ、ＱｍＷ出力の半纏体レーザーを用
いて記録したところ、ＰＭＭＡ基孜上に堆積した膜は、
パルス巾ＪｏＯｎ６ｅｃで、ＰＣ基板上に堆積した膜は
パルス巾２ｊＯｎθθＣでビット（開孔）が形成された
。When this film was recorded using a ♂3θnm semi-enveloped laser with QmW output, the film deposited on the PMMA substrate was
Bits (openings) were formed in the film deposited on the PC substrate with a pulse width of JoOn6ec and a pulse width of 2jOnθθC.
更に、これらのサンプルを６０℃、ｒＯ％ＲＨの雰囲気
で／夕月間保存したところ、ｒｊＯｎｒｎでの光反射率
（３ｏ％程度）は保存前後で変化がなかった。Further, when these samples were stored at 60° C. in an atmosphere of rO%RH during the evening, the light reflectance at rjOnrn (approximately 30%) did not change before and after storage.
実施例−
子め洗浄したＰＭＭＡｌ ＰＣ基板を真空室にセットし
て室内を’：： ／ Ｘ ／ ０−’ Ｔｏｒｒ ｉで
排気した後、Ａｒを一〇ｃｃｍ流し、Ｘ窒呈内圧力を！
Ｘ ／ ０−” Ｔｏｒｒにして、極間距離♂Ｏｕｒｎ
にてＲＦパワー！ＯＷで１分、Ｔｅターゲットをプリβ
スパッタする。Example - After setting a cleaned PMMAAl PC board in a vacuum chamber and evacuating the chamber with ':: /
Set to X/0-” Torr and set the distance between poles ♂Own
RF power! OW for 1 minute, Te target pre-β
Spatter.
その後、Ａｒ 、！θｃｃｔｎ、六弗化硫黄（ＳＦ、
＞ ｗｊ ｃｃｍ、 Ｎ、Ｎ−ジメチルホルムアミド（
ＤＭＦ）を、分圧比でコ、４ Ｘ ／ ０−’ Ｔｏｒ
ｒ 、真空室内に導入し、真を室内全圧力をｊ Ｘ ／
０−’ Ｔｏｒｒにする。After that, Ar! θcctn, sulfur hexafluoride (SF,
> wj ccm, N,N-dimethylformamide (
DMF) at a partial pressure ratio of 4 X / 0-' Tor
r is introduced into the vacuum chamber, and the total pressure in the room is j x /
Set to 0-' Torr.
極間距履ｒＯｍＲ，ＲＰパワーｒＯｗにて’ｒｅターゲ
ットを一！秒スパッタして、＝３０ＯＡのＳＦ、 、
ＤＭ Ｆ−Ｔｅスパッタ厭を得た。're target is one with pole distance rOmR and RP power rOw! Sputter for seconds, = 30OA SF, ,
DM F-Te sputtering was obtained.
この膜を、Ｊ’ｊ０ｎｍ、４ｔｍＷ出力の半纏体し一ザ
ーを用すて記録特性を調べたところ、ＰＭＭＡ基板上に
堆積した膜は、パルス巾２０ｏｎｅｓｃで、ＰＯ基叛上
に堆積した膜はパルス巾２！０ｎ ＢｅＱでビット（開
孔）が形成された。The recording characteristics of this film were examined using a single laser with a J'j0nm and 4tmW output.The film deposited on the PMMA substrate had a pulse width of 20onesc, and the film deposited on the PO substrate had a pulse width of 20onesc. Bits (openings) were formed with a pulse width of 2!0n BeQ.
更に、これらの堆積膜を１０℃、１０％ＲＨの雰囲気で
／ケ月保存したところ、♂３θｎｍでの光反射率は、保
存前後で変化がなかった。Furthermore, when these deposited films were stored in an atmosphere of 10° C. and 10% RH for several months, the light reflectance at ♂3θ nm did not change before and after storage.
（発明の効果）
本発明に係る記録用媒体は、０７Ｎ比、ビット形状、コ
ントラスト、経時安定性にすぐれる。(Effects of the Invention) The recording medium according to the present invention has excellent 07N ratio, bit shape, contrast, and stability over time.
また、金栖ターゲットと反応性ガスによるスパッタで容
易に、効率よく膜が形成されるという、プロセス上の利
点も有する。It also has a process advantage in that a film can be easily and efficiently formed by sputtering using a Kanasu target and a reactive gas.
第１図（ａ）、（１））は、本発明に係る記録媒体の製
造のための一例を示す（（ａｌＲＦ法、（ｂ）Ｄｃ法）
。
図中（１）は、反応容器、（２）はガス尋人口、（３）
は基板、（４）は金属ターゲット、（５）は成極をそれ
ぞれ示す。FIGS. 1(a) and (1)) show an example for manufacturing a recording medium according to the present invention ((alRF method, (b) Dc method)
. In the figure, (1) is the reaction vessel, (2) is the gas volume, (3)
(4) shows the metal target, and (5) shows the polarization.
Claims (2)
リングし、基板上に薄膜を形成させてなる光学的記録媒
体。(1) An optical recording medium in which a thin film is formed on a substrate by reactive sputtering of a metal using a fluoride chalcogen gas.
特徴とする特許請求の範囲第１項記載の光学的記録媒体
。(2) The optical recording medium according to claim 1, characterized in that an organic gas is used in combination with the fluorinated chalcogen gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60172647A JPH0678032B2 (en) | 1985-08-06 | 1985-08-06 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60172647A JPH0678032B2 (en) | 1985-08-06 | 1985-08-06 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6233348A true JPS6233348A (en) | 1987-02-13 |
| JPH0678032B2 JPH0678032B2 (en) | 1994-10-05 |
Family
ID=15945760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60172647A Expired - Lifetime JPH0678032B2 (en) | 1985-08-06 | 1985-08-06 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0678032B2 (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589232A (en) * | 1981-07-10 | 1983-01-19 | Toshiba Corp | Optical information recording medium |
| JPS5957790A (en) * | 1982-09-29 | 1984-04-03 | Toshiba Corp | Production of energy information recording film body |
| JPS59146461A (en) * | 1983-02-09 | 1984-08-22 | Canon Inc | Optical recording medium |
| JPS59148156A (en) * | 1983-02-04 | 1984-08-24 | エヌ・ベ−・フイリップス・フル−イランペンファブリケン | Manufacture of optically readable information disc |
| JPS59162092A (en) * | 1984-01-20 | 1984-09-12 | Canon Inc | Recording medium |
| JPS6064894A (en) * | 1983-09-20 | 1985-04-13 | Fuji Photo Film Co Ltd | Laser recording material |
| JPS60124290A (en) * | 1983-12-09 | 1985-07-03 | Nippon Telegr & Teleph Corp <Ntt> | Production of optical recording medium |
-
1985
- 1985-08-06 JP JP60172647A patent/JPH0678032B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589232A (en) * | 1981-07-10 | 1983-01-19 | Toshiba Corp | Optical information recording medium |
| JPS5957790A (en) * | 1982-09-29 | 1984-04-03 | Toshiba Corp | Production of energy information recording film body |
| JPS59148156A (en) * | 1983-02-04 | 1984-08-24 | エヌ・ベ−・フイリップス・フル−イランペンファブリケン | Manufacture of optically readable information disc |
| JPS59146461A (en) * | 1983-02-09 | 1984-08-22 | Canon Inc | Optical recording medium |
| JPS6064894A (en) * | 1983-09-20 | 1985-04-13 | Fuji Photo Film Co Ltd | Laser recording material |
| JPS60124290A (en) * | 1983-12-09 | 1985-07-03 | Nippon Telegr & Teleph Corp <Ntt> | Production of optical recording medium |
| JPS59162092A (en) * | 1984-01-20 | 1984-09-12 | Canon Inc | Recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0678032B2 (en) | 1994-10-05 |
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| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |