JPS6236532U - - Google Patents

Description

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of the configuration of a reduction projection exposure apparatus showing an embodiment of this invention, FIG. 2 is a block diagram showing an example of correction by the correction means in FIG. 1, and FIG. Figure 4 shows an example of exposure time correction data, Figure 5 shows how a wafer is exposed in the conventional method, Figure 6 shows the thickness of the transparent thin film on the substrate. Figure 7 is a diagram showing how the energy of reflected light and light absorbed by the photoresist changes with respect to light energy, and Figure 7 is a diagram showing the relationship between the light energy absorbed by the photoresist and the pattern width of the resist after development. FIG. 8 is a diagram showing the relationship between the thickness of the transparent thin film and the pattern width of the resist after development when the wafer is exposed for a constant exposure time. In the figure, 1 is an exposure light source, 2 is a reticle, 3 is a reduction projection lens, 4 is a wafer, 5 is a stage, 6 is a measurement light source, 7 is a half mirror, 8 is a beam splitter, 9 is a detector, 10 is a correction means. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Scope of utility model registration request] In a reduction projection exposure apparatus that performs exposure by reducing and projecting a pattern on each wafer, there is provided a measurement light source at or near the exposure wavelength, a detector for measuring the intensity of reflected light from the wafer, and a measurement light source for measuring the intensity of light reflected from the wafer. 1. A reduction projection exposure apparatus comprising: a correction means for correcting an exposure time according to the intensity of reflected light.