JPS6236829A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPS6236829A
JPS6236829A JP60176335A JP17633585A JPS6236829A JP S6236829 A JPS6236829 A JP S6236829A JP 60176335 A JP60176335 A JP 60176335A JP 17633585 A JP17633585 A JP 17633585A JP S6236829 A JPS6236829 A JP S6236829A
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
passivation film
sealed semiconductor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60176335A
Other languages
Japanese (ja)
Inventor
Takashi Kondo
隆 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60176335A priority Critical patent/JPS6236829A/en
Publication of JPS6236829A publication Critical patent/JPS6236829A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は樹脂封止型半導体素子の主表面を、　。[Detailed description of the invention] [Industrial application field] This invention covers the main surface of a resin-sealed semiconductor element.

樹脂に混合されている無機充填剤より硬い被験でコート
した、信頼性のすぐれた樹脂封止半導体装置に関するも
のである。The present invention relates to a highly reliable resin-encapsulated semiconductor device coated with a material harder than the inorganic filler mixed in the resin.

〔従来の技術〕[Conventional technology]

第２図は従来のこの種の樹脂封止半導体装置を示す。 FIG. 2 shows a conventional resin-sealed semiconductor device of this type.

図中、３は半導体素子、３１はパッシベーション膜、３
２−能動領域、３３はアルミ配線領域、２ば半導体素子
３の電気信号を外部へ取り出すためのリード、４は半導
体素子３とリード２とを電気的に接続するための金ワイ
ヤである。また１は封止樹脂であり、通常、充填剤、着
色剤、カップリング剤、難燃剤等を含んでいる。In the figure, 3 is a semiconductor element, 31 is a passivation film, 3
2 - active area; 33 an aluminum wiring area; 2 - leads for extracting electrical signals from the semiconductor element 3 to the outside; 4 - gold wires for electrically connecting the semiconductor element 3 and the leads 2. Further, 1 is a sealing resin, which usually contains a filler, a colorant, a coupling agent, a flame retardant, and the like.

従来のこの種の半導体素子は信頼性を確保するため、そ
の主表面に、二酸化シリコン、リンガラス、窒化シリコ
ン、酸化アルミニウム等の絶縁膜、即ちパッシベーショ
ン膜３１が１μｍ程度の厚さで被覆されている。In order to ensure the reliability of conventional semiconductor elements of this type, their main surfaces are coated with an insulating film of silicon dioxide, phosphorous glass, silicon nitride, aluminum oxide, etc., that is, a passivation film 31 with a thickness of about 1 μm. There is.

半導体素子３はパッシベーション膜３１、能動領域３．
２、電極および配線領域３３等からなり、パッシベーシ
ョン膜３１はシリコンの酸化膜や窒化膜からなり、外部
からの汚染を防止するために付与されている。これらは
、スパッタリング法やプラズマＣＶＤ法によって、ウェ
ハ状態で積層され、所要の部分が、通常は電極部分のみ
が写真製版等の手段によって露出される。The semiconductor element 3 includes a passivation film 31, an active region 3.
2. The passivation film 31 is made of a silicon oxide film or a nitride film, and is provided to prevent contamination from the outside. These are laminated in a wafer state by a sputtering method or a plasma CVD method, and required portions, usually only electrode portions, are exposed by means such as photolithography.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このため、従来のバンジベーシランｌ１１３１はピンホ
ールがあったり、膜質が本来の酸化物や窒化物より少し
劣り、と（に、硬さが不足するため、封止樹脂１中に混
入されている充填剤により、傷あるいはクランクが生じ
る場合がある。For this reason, the conventional Bungebasilan 1131 has pinholes, the film quality is slightly inferior to the original oxide or nitride, and (because it lacks hardness, the filler mixed in the sealing resin 1) This may cause scratches or cracks.

この発明は、上記のような問題点を解消するためになさ
れたもので、信頼性の高い、樹脂封止半導体装置を得る
ことを目的としている。This invention was made to solve the above-mentioned problems, and aims to provide a highly reliable resin-sealed semiconductor device.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る樹脂封止半導体装置は封止樹脂中の充填
剤より硬い金属酸化物、金属窒化物、又は金属炭化物か
らなるパッシベーション膜をスパッタリング法やＣＶＤ
法で形成した後、その表面層のみを加熱溶融させたもの
である。In the resin-sealed semiconductor device according to the present invention, a passivation film made of a metal oxide, metal nitride, or metal carbide, which is harder than the filler in the sealing resin, is formed by sputtering or CVD.
After forming by a method, only the surface layer is heated and melted.

〔作用〕[Effect]

この発明においては、封止樹脂中の充填剤より硬い金属
酸化物、金属窒化物、又は金属炭化物からなるパッシベ
ーション膜をスパッタリング法やＣＶＤ法で形成した後
、その表面層のみを加熱溶融させたから、パッシベーシ
ョン膜の膜質が向上し、半導体装置の高信頼度化を達成
できる。In this invention, after forming a passivation film made of metal oxide, metal nitride, or metal carbide that is harder than the filler in the sealing resin by sputtering or CVD, only the surface layer is heated and melted. The film quality of the passivation film is improved, and higher reliability of semiconductor devices can be achieved.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第１
図は本発明の一実施例による樹脂封止半導体装置を示す
。図中第２図と同一符号は同一のものを示し、３１は封
止樹脂中の充填剤より硬い金属酸化物、金属窒化物、金
属炭化物等からなるパッシベーション膜で、３１１はそ
の表面部をレーザや電子ビーム等の高エネルギ源で極薄
く加熱し、硬化処理を施した強化層（溶融層）である。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows a resin-sealed semiconductor device according to an embodiment of the present invention. In the figure, the same reference numerals as in FIG. This is a reinforced layer (molten layer) that is heated to an extremely thin layer using a high-energy source such as an electron beam or an electron beam, and then hardened.

このように、半導体素子３の主表面部にプラズマＣＶＤ
法やスパッタリング法で積層されたパッシベーション膜
の表面に加熱処理を施して強化層を形成することにより
、該パッシベーション膜中のピンホールの除去や膜質の
向上を達成でき、半導体装置の高信顛化を達成できる。In this way, plasma CVD is applied to the main surface of the semiconductor element 3.
By applying heat treatment to the surface of a passivation film laminated by a method or a sputtering method to form a reinforcing layer, it is possible to remove pinholes in the passivation film and improve the film quality, thereby increasing the reliability of semiconductor devices. can be achieved.

即ち、半導体素子３におけるパッシベーション膜３１は
外部からの汚染源の侵入をストツプする作用の他、樹脂
封止半導体装置においては封止樹脂の残留応力に耐える
強度が必要であるが、上記のようにシリコン、アルミニ
ウム等の窒化膜や酸化膜からなるパッシベーション膜を
局部的に加熱し、熱処理を施すことにより該膜を強化し
ているのでこの強度を保有することとなる。That is, the passivation film 31 in the semiconductor element 3 not only has the function of stopping the intrusion of contamination sources from the outside, but also has the strength to withstand the residual stress of the sealing resin in a resin-sealed semiconductor device. This strength is achieved because the passivation film made of a nitride film or oxide film of aluminum or the like is locally heated and heat treated to strengthen the film.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、封止樹脂中の充填剤
より硬い金属酸化物、金属窒化物、又は金属炭化物から
なるパッシベーション膜を局部的に加熱溶融し、該膜の
強化を図ったので、ピンホールの除去や膜質の向上を達
成でき、高信頼度な樹脂封止半導体装置が得られる効果
がある。As described above, according to the present invention, the passivation film made of metal oxide, metal nitride, or metal carbide, which is harder than the filler in the sealing resin, is locally heated and melted to strengthen the film. Therefore, pinholes can be removed and film quality can be improved, and a highly reliable resin-sealed semiconductor device can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例による樹脂封止半導体装置の
一部拡大断面図、第２図は従来の樹脂封止半導体装置を
示す図である。 １は封止樹脂、２はリード、３は半導体素子、３１はパ
ッシベーション膜、３１１は強化Ｎ（加熱溶融層）であ
る。 なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a partially enlarged sectional view of a resin-sealed semiconductor device according to an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional resin-sealed semiconductor device. 1 is a sealing resin, 2 is a lead, 3 is a semiconductor element, 31 is a passivation film, and 311 is a reinforced N (heat-fused layer). Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (2)

【特許請求の範囲】[Claims] （１）半導体素子が形成された半導体基板の、少なくと
も該素子の能動領域上と微細な配線領域上に、スパッタ
リング法又はプラズマＣＤＶ法により形成した封止樹脂
中の充填剤より硬い金属酸化物、金属窒化物、又は金属
炭化物からなるパッシベーション膜と、該パッシベーシ
ョン膜の表面層のみを加熱溶融させて形成した溶融層と
を備えたことを特徴とする樹脂封止半導体装置。(1) A metal oxide harder than the filler in the sealing resin formed by sputtering or plasma CDV on at least the active region and fine wiring region of the semiconductor substrate on which the semiconductor element is formed; A resin-sealed semiconductor device comprising: a passivation film made of a metal nitride or a metal carbide; and a molten layer formed by heating and melting only the surface layer of the passivation film. （２）上記溶融層は、レーザビームあるいは電子ビーム
により局部的に溶融して形成したことを特徴とする特許
請求の範囲第１項記載の半導体装置。(2) The semiconductor device according to claim 1, wherein the molten layer is formed by locally melting with a laser beam or an electron beam.
JP60176335A 1985-08-09 1985-08-09 Resin-sealed semiconductor device Pending JPS6236829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60176335A JPS6236829A (en) 1985-08-09 1985-08-09 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60176335A JPS6236829A (en) 1985-08-09 1985-08-09 Resin-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPS6236829A true JPS6236829A (en) 1987-02-17

Family

ID=16011784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60176335A Pending JPS6236829A (en) 1985-08-09 1985-08-09 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS6236829A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352609A (en) * 2001-05-28 2002-12-06 Fine Rubber Kenkyusho:Kk Transparent covering material for light source and light source provided with the covering material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002352609A (en) * 2001-05-28 2002-12-06 Fine Rubber Kenkyusho:Kk Transparent covering material for light source and light source provided with the covering material

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