JPS6237945U - - Google Patents
Info
- Publication number
- JPS6237945U JPS6237945U JP12922485U JP12922485U JPS6237945U JP S6237945 U JPS6237945 U JP S6237945U JP 12922485 U JP12922485 U JP 12922485U JP 12922485 U JP12922485 U JP 12922485U JP S6237945 U JPS6237945 U JP S6237945U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- electrode
- gate
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 description 2
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の一実施例の平面図、第２図は
本考案の他の実施例の平面図、第３図は従来構造
の平面図である。
１，１１…電界効果トランジスタ素子、２，１
２…ゲート電極、３，１３…ソース電極、４，１
４…ドレイン電極、５，１５…ゲート引き出し電
極、６，１６…ドレイン引き出し電極、７，１７
…ソース共通電極、８…仮想四辺形。
FIG. 1 is a plan view of one embodiment of the present invention, FIG. 2 is a plan view of another embodiment of the present invention, and FIG. 3 is a plan view of a conventional structure. 1, 11...field effect transistor element, 2, 1
2... Gate electrode, 3, 13... Source electrode, 4, 1
4... Drain electrode, 5, 15... Gate extraction electrode, 6, 16... Drain extraction electrode, 7, 17
...Source common electrode, 8...Virtual quadrilateral.
Claims (1)
に並設してなる電界効果トランジスタにおいて、
これらの電極を囲む仮想四辺形の対角位置にゲー
ト引き出し電極及びドレイン引き出し電極を夫々
対向配置したことを特徴とする電界効果トランジ
スタの電極構造。 ２ 仮想四辺形が長方形又は平行四辺形である実
用新案登録請求の範囲第１項記載の電界効果トラ
ンジスタの電極構造。[Claims for Utility Model Registration] 1. A field effect transistor in which gate, source, and drain electrodes are arranged in parallel in a comb shape,
An electrode structure for a field effect transistor, characterized in that a gate lead-out electrode and a drain lead-out electrode are arranged to face each other at diagonal positions of a virtual quadrilateral surrounding these electrodes. 2. The electrode structure of a field effect transistor according to claim 1, wherein the virtual quadrilateral is a rectangle or a parallelogram.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12922485U JPH0316281Y2 (en) | 1985-08-23 | 1985-08-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12922485U JPH0316281Y2 (en) | 1985-08-23 | 1985-08-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6237945U true JPS6237945U (en) | 1987-03-06 |
| JPH0316281Y2 JPH0316281Y2 (en) | 1991-04-08 |
Family
ID=31025611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12922485U Expired JPH0316281Y2 (en) | 1985-08-23 | 1985-08-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0316281Y2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01225176A (en) * | 1988-03-03 | 1989-09-08 | Nec Corp | Field effect transistor |
| JPWO2022215319A1 (en) * | 2021-04-05 | 2022-10-13 |
-
1985
- 1985-08-23 JP JP12922485U patent/JPH0316281Y2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01225176A (en) * | 1988-03-03 | 1989-09-08 | Nec Corp | Field effect transistor |
| JPWO2022215319A1 (en) * | 2021-04-05 | 2022-10-13 | ||
| WO2022215319A1 (en) * | 2021-04-05 | 2022-10-13 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0316281Y2 (en) | 1991-04-08 |