JPH01169046U - - Google Patents
Info
- Publication number
- JPH01169046U JPH01169046U JP6524588U JP6524588U JPH01169046U JP H01169046 U JPH01169046 U JP H01169046U JP 6524588 U JP6524588 U JP 6524588U JP 6524588 U JP6524588 U JP 6524588U JP H01169046 U JPH01169046 U JP H01169046U
- Authority
- JP
- Japan
- Prior art keywords
- emitter electrode
- transistor
- stabilizing resistor
- resistance value
- entire circumference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Description
第１図Ａ及び第１図Ｂは夫々本発明を説明する
為の平面図及びＡＡ線断面図、第２図は櫛歯電極
を示す平面図、第３図は従来例を説明する為の平
面図である。
２１は半導体基板、２３はベース領域、２４は
エミツタ領域、２８は共通エミツタ電極、３１は
エミツタ電極、３２はポリシリコン抵抗である。
1A and 1B are a plan view and a cross-sectional view taken along the line AA for explaining the present invention, FIG. 2 is a plan view showing a comb-teeth electrode, and FIG. 3 is a plan view for explaining a conventional example. It is a diagram. 21 is a semiconductor substrate, 23 is a base region, 24 is an emitter region, 28 is a common emitter electrode, 31 is an emitter electrode, and 32 is a polysilicon resistor.
Claims (1)
単位トランジスタのエミツタ電極と共通エミツタ
電極との間にポリシリコンから成る安定化抵抗を
挿入したパワートランジスタにおいて、前記共通
エミツタ電極を前記エミツタ電極の全周にわたり
一定の間隔で離間するように前記エミツタ電極の
周囲に設け、前記安定化抵抗を前記エミツタ電極
の全周にわたり配設可能にすると共に、前記安定
化抵抗を少なくとも前記エミツタ電極の両側に同
じ抵抗値となるように配設したことを特徴とする
パワートランジスタ。 (2) 前記共通エミツタ電極を櫛歯状に配設する
と共に、前記安定化抵抗の抵抗値を変えることに
より前記単位トランジスタの動作を平均化したこ
とを特徴とする請求項第１項に記載のトランジス
タ。[Claims for Utility Model Registration] (1) A power transistor in which a large number of unit transistors are connected in parallel and a stabilizing resistor made of polysilicon is inserted between the emitter electrode of each unit transistor and a common emitter electrode, Emitter electrodes are provided around the emitter electrode at regular intervals over the entire circumference of the emitter electrode, and the stabilizing resistor can be disposed over the entire circumference of the emitter electrode. A power transistor characterized in that the emitter electrode is disposed at least on both sides of the emitter electrode so as to have the same resistance value. (2) The common emitter electrode is arranged in a comb-teeth shape, and the operation of the unit transistors is averaged by changing the resistance value of the stabilizing resistor. transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6524588U JPH01169046U (en) | 1988-05-18 | 1988-05-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6524588U JPH01169046U (en) | 1988-05-18 | 1988-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01169046U true JPH01169046U (en) | 1989-11-29 |
Family
ID=31290684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6524588U Pending JPH01169046U (en) | 1988-05-18 | 1988-05-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01169046U (en) |
-
1988
- 1988-05-18 JP JP6524588U patent/JPH01169046U/ja active Pending
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