JPS6247839B2 - - Google Patents

Info

Publication number
JPS6247839B2
JPS6247839B2 JP1206284A JP1206284A JPS6247839B2 JP S6247839 B2 JPS6247839 B2 JP S6247839B2 JP 1206284 A JP1206284 A JP 1206284A JP 1206284 A JP1206284 A JP 1206284A JP S6247839 B2 JPS6247839 B2 JP S6247839B2
Authority
JP
Japan
Prior art keywords
substrate
partition plate
molecular beam
thin film
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1206284A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60161393A (ja
Inventor
Juichi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1206284A priority Critical patent/JPS60161393A/ja
Publication of JPS60161393A publication Critical patent/JPS60161393A/ja
Publication of JPS6247839B2 publication Critical patent/JPS6247839B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1206284A 1984-01-27 1984-01-27 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置 Granted JPS60161393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1206284A JPS60161393A (ja) 1984-01-27 1984-01-27 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1206284A JPS60161393A (ja) 1984-01-27 1984-01-27 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS60161393A JPS60161393A (ja) 1985-08-23
JPS6247839B2 true JPS6247839B2 (da) 1987-10-09

Family

ID=11795109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1206284A Granted JPS60161393A (ja) 1984-01-27 1984-01-27 単結晶薄膜周期構造を形成するための分子線エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS60161393A (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261315A (ja) * 1985-09-11 1987-03-18 Sharp Corp 分子線エピタキシ−装置

Also Published As

Publication number Publication date
JPS60161393A (ja) 1985-08-23

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term