JPS6254458A - Input protecting circuit - Google Patents

Input protecting circuit

Info

Publication number
JPS6254458A
JPS6254458A JP60194101A JP19410185A JPS6254458A JP S6254458 A JPS6254458 A JP S6254458A JP 60194101 A JP60194101 A JP 60194101A JP 19410185 A JP19410185 A JP 19410185A JP S6254458 A JPS6254458 A JP S6254458A
Authority
JP
Japan
Prior art keywords
input
resistor
resistance
input protection
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60194101A
Other languages
Japanese (ja)
Inventor
Yoshio Okada
芳夫 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60194101A priority Critical patent/JPS6254458A/en
Publication of JPS6254458A publication Critical patent/JPS6254458A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To realize higher speeds and to improve voltage-withstanding capability by a method wherein an input protecting resistor is made to present resistance that is sufficiently lower at its end portion than at other portions. CONSTITUTION:The resistance to be presented by an input protecting resistor R is so caused as to be lower at its end portion A measured from its input side than at other portions. For example, the width is enlarged at the end portion A of the protecting resistor R, which results in a decrease in the resistance to be presented by the resistor R. The end portion A made larger than the other portions causes fusing if any to take place in the other portions. The voltage causing such a fusion represents the true voltage-withstanding capability of the input-protecting circuit. The portion A with its width enlarged presents less resistance, generates less heat, and radiates more heat, which all contributes to the attainment of higher speeds and improved voltage-withstanding capability.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は入力保護回路に関するもので、特にMO8集積
回路の入力保t!に使用されるものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an input protection circuit, and particularly to an input protection circuit for MO8 integrated circuits. It is used for.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

この種の従来の入力保護回路を第2図に示す。 A conventional input protection circuit of this type is shown in FIG.

図中Tr1はアルミニウムのフィールドトランジスタ、
D、は保護ダイオード素子、Rは保護抵抗である。この
ものは、入力に正のサージ電圧を印加した場合は、トラ
ンジスタTr、を通してディスチャージされる。また入
力に負のサージ電圧を印加した場合は、ダイオード素子
Dlを通してディスチャージされる。
In the figure, Tr1 is an aluminum field transistor;
D is a protection diode element, and R is a protection resistor. This is discharged through the transistor Tr when a positive surge voltage is applied to the input. Further, when a negative surge voltage is applied to the input, it is discharged through the diode element Dl.

第3図に上記保護抵抗Rのノ母ターン平面図を示す。図
中1はメンダイングワイヤが接続されるアルミニウムパ
ッド、2はアルミニウムのカバー、3はトランジスタT
r、やダイオード素子り菫に接続されるアルミニウム配
線、4,5は配線コンタクト孔である。保護抵抗Rはポ
リシリコン、拡散層等よりなり、小面積で長さをかせぐ
ために蛇行させである。第4図は第3図のB−B線に沿
う断面図で、図中6は半導体基板、7はSlO□膜であ
る。このものにあっては、サージのディスチャージ中に
抵抗部Rで発生した熱はアルミニウム2を伝わり、パッ
ド1、デンディングワイヤを通して外へ逃けてゆくこと
により、抵抗Rの溶断を防ぐものである。
FIG. 3 shows a plan view of the main turn of the protective resistor R. In the figure, 1 is the aluminum pad to which the mending wire is connected, 2 is the aluminum cover, and 3 is the transistor T.
4 and 5 are wiring contact holes. The protective resistor R is made of polysilicon, a diffusion layer, etc., and has a meandering shape in order to obtain a long length with a small area. FIG. 4 is a sectional view taken along the line B--B in FIG. 3, where 6 is a semiconductor substrate and 7 is an SlO□ film. In this case, the heat generated in the resistor R during surge discharge is transmitted through the aluminum 2 and escapes to the outside through the pad 1 and the denning wire, thereby preventing the resistor R from melting. .

いろいろな変形はあるものの、従来技術による入力保護
回路の本質は第2図ないし第4図に1とめられる。耐圧
の大きい保護回路をつくるためには、保護抵抗Rの値を
高くすればよいが、集積回路の高速化には妨げとなるた
め、上記抵抗値はぎりぎシまで下げることが望ましい。
Although there are various modifications, the essence of the input protection circuit according to the prior art can be summarized in FIGS. 2 through 4. In order to create a protection circuit with a high withstand voltage, the value of the protection resistor R may be increased, but since this hinders the speeding up of integrated circuits, it is desirable to reduce the resistance value to the bare minimum.

抵抗部を下けると抵抗部で発生する熱シは増加し、溶断
をひきおこす。即ち回路の高速化と高耐圧の保護回路と
は相反する要語である。またパターン的には第3図、第
4図のAの部分が特に溶断しやすい。この部分は保護抵
抗Rの終端部付近で、アルミニウムのカバー2が終ると
ころであり、抵抗Rで発生したジュール熱を、アルミニ
ウムが効率よく吸収することがむずかしいためである。
When the resistance part is lowered, the heat generated in the resistance part increases, causing fusing. In other words, higher speed circuits and higher voltage protection circuits are contradictory terms. Furthermore, in terms of patterns, the portion A in FIGS. 3 and 4 is particularly prone to fusing. This is because this part is near the end of the protective resistor R, where the aluminum cover 2 ends, and it is difficult for aluminum to efficiently absorb the Joule heat generated by the resistor R.

〔発明の目的〕 本発明は入力作物回路において、保護抵抗を高くするこ
となしに高耐圧化をはかり、高速化と高耐圧化を同時に
満たすことを目的とする。
[Object of the Invention] An object of the present invention is to increase the voltage resistance without increasing the protective resistance in an input crop circuit, and to simultaneously achieve high speed and high voltage resistance.

〔発明の概要〕[Summary of the invention]

本発明は、入力保護抵抗の終端部付近を他の部分よシ充
分に抵抗値を下げる(−例として太くする)ことにより
、この部分の発熱量を低減し、溶断を防ぐ。他の部分は
アルミニウムで大きくおおわれているため、溶断に必要
な発熱量は上記終端部付近よシ大きく、従って抵抗値を
下げる(太くする)必要はない。
In the present invention, by sufficiently lowering the resistance value (for example, making the resistor thicker) near the terminal end of the input protection resistor than in other parts, the amount of heat generated in this part is reduced and melting is prevented. Since the other portions are largely covered with aluminum, the amount of heat required for fusing is greater than that near the terminal portion, so there is no need to lower (increase) the resistance value.

〔発明の実施例〕[Embodiments of the invention]

以下図面を参照して本発明の一実施例を説明する。第1
図は同実施例の・リーン平面図であるが、これは前記従
来例のものと対応させた場合の例であるから、対応個所
には同一符号を付して説明を省略し、特徴とする点の説
明を行なう。本発明の特徴は、入力保護回路の入力側か
ら見た入力保護抵抗Rの終端部付通人の抵抗値を、入力
保護抵抗Rの他の部分にくらべて下げることである。こ
こでは、入力保護抵抗Rの終端部付通人の幅を、他の部
分より太くすることによって抵抗値を下げている。即ち
太くしたいのは、アルミニウムのカバー(放熱効果をよ
くするためのカバー)2の縁の部分、及び保護抵抗のう
ちアルミニウムにおおわれていない部分である。
An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a lean plan view of the same embodiment, but since this is an example in which it corresponds to that of the conventional example, corresponding parts are given the same reference numerals and explanations are omitted, and the features are as follows. Let me explain the points. A feature of the present invention is that the resistance value of the terminal end of the input protection resistor R as seen from the input side of the input protection circuit is lowered compared to other parts of the input protection resistor R. Here, the resistance value is lowered by making the width of the terminal end of the input protection resistor R wider than other parts. That is, what is desired to be thicker is the edge portion of the aluminum cover (cover for improving heat dissipation effect) 2 and the portion of the protective resistor that is not covered with aluminum.

しかして従来技術の入力保護抵抗(第3図)では、抵抗
値を低くすると(高速化のためには低抵抗であればある
ほど望ましい)人の部分での溶断が発生し、耐圧を下げ
ていた。Aの部分が溶断しやすいのは、アルミニウム層
2が全面をおおっていないためである。するとAの部分
の直上のアルミニウム層2は熱が一方にしか逃げてゆか
ず、放熱効率がおちる。またコンタクト孔5でアルミニ
ウム配線3とのコンタクトをとるため、どうしてもアル
ミニウム層2で&われていない抵抗部分ができてしまう
。この部分の太さを例えば2倍にすると、発熱量は(単
位長さ当!+ ) 1/2となり、単位面積轟りでは1
/4に、まで減少する。従って第1図のように人の部分
を充分太くとって、溶断が他の部分で起こるようにして
おけばよい。この時の耐圧が入力保護の真の耐圧である
。即ち本実施例によれば、人の部分を太くしたため、抵
抗値が小となって発熱量が少なくなり、また面積が犬と
なって放熱量が大にできるものであ゛る。
However, with the conventional input protection resistor (Figure 3), when the resistance value is lowered (the lower the resistance is, the more desirable it is for higher speeds), melting occurs at the input part, lowering the withstand voltage. Ta. The reason why the part A is easily fused is because the aluminum layer 2 does not cover the entire surface. Then, heat can only escape to one side of the aluminum layer 2 directly above the part A, and the heat dissipation efficiency decreases. Further, since contact is made with the aluminum wiring 3 through the contact hole 5, a resistive portion not covered by the aluminum layer 2 is inevitably formed. For example, if the thickness of this part is doubled, the calorific value will be (per unit length! +) 1/2, and the unit area will be 1/2.
/4. Therefore, as shown in FIG. 1, the person's part should be made sufficiently thick so that the melting occurs in other parts. The withstand voltage at this time is the true withstand voltage of input protection. That is, according to this embodiment, since the human part is made thicker, the resistance value becomes smaller and the amount of heat generated decreases, and the area becomes a dog, so that the amount of heat dissipated can be increased.

なお本発明は実施例のみに限られることなく種々の応用
が可能である。例えば何らかの方法で、第3図の人の部
分の抵抗を(太さはそのままで)他の部分にくらべて下
げることが可能ならば(例えばこの部分のみIリシリコ
ンをポリサイドにする等)、それでも同様の目的を実現
できる。
Note that the present invention is not limited to the embodiments, and can be applied in various ways. For example, if it is possible to somehow lower the resistance of the human part in Figure 3 compared to other parts (while keeping the same thickness) (for example, by making I-resilicon polycide only in this part), it will still be the same. can realize the purpose of

〔発明の効果〕〔Effect of the invention〕

以上説明した如く本発明によれば、入力保護抵抗値を高
くすることなしに高耐圧化をはかり、高速化と高耐圧化
をβJRK満たし得る入力保護回路が提供できるもので
ある。
As described above, according to the present invention, it is possible to provide an input protection circuit that can achieve high breakdown voltage without increasing the input protection resistance value and can satisfy βJRK for high speed and high breakdown voltage.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例のパターン平面図、第2図は
入力保護回路図、第3図は従来の入力保護抵抗部分のノ
やターン平面図、第4図は第3図のB−B線に沿う断面
図である。 l・・・ぎンディングノ臂ツド、2・・・アルミニウム
のカバー、4,5・・・コンタクト孔、R・・・入力保
護抵抗、A・・・入力保護抵抗の終端部付近。 出願人代理人  弁理士 鈴 江 武 彦ロー図 第2図 第351
Fig. 1 is a pattern plan view of an embodiment of the present invention, Fig. 2 is an input protection circuit diagram, Fig. 3 is a plan view of a conventional input protection resistor portion, and Fig. 4 is a B of Fig. 3. - It is a sectional view along the B line. L...Ginding knob, 2...Aluminum cover, 4, 5...Contact hole, R...Input protection resistor, A...Near the terminal end of the input protection resistor. Applicant's agent Patent attorney Takehiko Suzue Figure 2 Figure 351

Claims (3)

【特許請求の範囲】[Claims] (1)入力保護回路においてその入力側から見た入力保
護抵抗の終端部付近の抵抗値を、前記入力保護抵抗の他
の部分にくらべて下げることを特徴とする入力保護回路
(1) An input protection circuit characterized in that the resistance value near the terminal end of the input protection resistor seen from the input side of the input protection circuit is lowered compared to other parts of the input protection resistor.
(2)前記入力保護抵抗の終端部付近の抵抗の幅を、前
記他の部分にくらべて太くすることによって抵抗値を下
げることを特徴とする特許請求の範囲第1項に記載の入
力保護回路。
(2) The input protection circuit according to claim 1, characterized in that the resistance value is lowered by making the width of the resistance near the terminal end of the input protection resistor thicker than in the other parts. .
(3)前記入力保護抵抗の終端部付近はアルミニウムで
覆われておらず、前記他の部分はアルミニウムで覆われ
ていることを特徴とする特許請求の範囲第1項または第
2項に記載の入力保護回路。
(3) A portion near the terminal end of the input protection resistor is not covered with aluminum, and the other portion is covered with aluminum. Input protection circuit.
JP60194101A 1985-09-03 1985-09-03 Input protecting circuit Pending JPS6254458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60194101A JPS6254458A (en) 1985-09-03 1985-09-03 Input protecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60194101A JPS6254458A (en) 1985-09-03 1985-09-03 Input protecting circuit

Publications (1)

Publication Number Publication Date
JPS6254458A true JPS6254458A (en) 1987-03-10

Family

ID=16318961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60194101A Pending JPS6254458A (en) 1985-09-03 1985-09-03 Input protecting circuit

Country Status (1)

Country Link
JP (1) JPS6254458A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251760U (en) * 1985-09-19 1987-03-31

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877252A (en) * 1981-11-02 1983-05-10 Hitachi Ltd Input protective circuit device
JPS6015973A (en) * 1983-07-08 1985-01-26 Hitachi Micro Comput Eng Ltd semiconductor equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877252A (en) * 1981-11-02 1983-05-10 Hitachi Ltd Input protective circuit device
JPS6015973A (en) * 1983-07-08 1985-01-26 Hitachi Micro Comput Eng Ltd semiconductor equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251760U (en) * 1985-09-19 1987-03-31

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