JPS6280936A - Method for manufacturing field emitters - Google Patents
Method for manufacturing field emittersInfo
- Publication number
- JPS6280936A JPS6280936A JP60219833A JP21983385A JPS6280936A JP S6280936 A JPS6280936 A JP S6280936A JP 60219833 A JP60219833 A JP 60219833A JP 21983385 A JP21983385 A JP 21983385A JP S6280936 A JPS6280936 A JP S6280936A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- field
- tip
- manufacturing field
- field emitters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 title claims description 4
- 239000013078 crystal Substances 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000001239 high-resolution electron microscopy Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 産業上の利用分野 本発明はフィールドエミッターの製造方法に関する。[Detailed description of the invention] Industrial applications The present invention relates to a method of manufacturing a field emitter.
フィールドエミッターからの放射電流は、輝度が太き（
、放射電子のエネルギー幅が小さく、しかも点光源に近
いなどの優れた性質を持っているので、これは高分解能
電子顕微鏡、電子線ホログラフィ−電顕、ナノメートル
リソグラフィー等の分野において不可欠のものである。The radiation current from the field emitter has a large brightness (
, the energy width of emitted electrons is small, and it has excellent properties such as being close to a point light source, making it indispensable in fields such as high-resolution electron microscopy, electron beam holography-electron microscopy, and nanometer lithography. be.
従来技術
従来、フィールドエミッターとしては、Ｗが実用化され
てきたが、このフィールドエミッターは電流の安定性に
問題があり、広い応用を疎外している。BACKGROUND ART Conventionally, W has been put to practical use as a field emitter, but this field emitter has a problem with current stability, which precludes its wide range of applications.
また炭化チタン単結晶からなるフィールドエミッターも
知られている。しかし、このフィールドエミッターから
の放射電子は、チップ先端近傍から放射状に放出され、
い（つかの電子ビーム塊に分れる問題点がある。Field emitters made of single crystal titanium carbide are also known. However, the radiated electrons from this field emitter are emitted radially from near the tip of the chip.
(There is a problem that the electron beam splits into a few lumps.)
本発明者らはこの問題点を解決すべく研究の結果、遷移
金属化合物からなるフィールドエミッターの軸方位を＜
１１０＞方位に選ぶことにより、放射電子ビームの方向
をエミッター軸方位にすることを開発し得た（特願昭５
８−１９９６０５号参照）。In order to solve this problem, the present inventors conducted research and found that the axial direction of a field emitter made of a transition metal compound was
110> direction, it was possible to develop the direction of the emitted electron beam to be the emitter axis direction (Japanese Patent Application No. 1983).
8-199605).
発明の目的
本発明の目的は高輝度でさらに優れた電子放射特性を示
すフィールドエミッターの製造方法を提供するにある。OBJECTS OF THE INVENTION An object of the present invention is to provide a method for manufacturing a field emitter that exhibits high brightness and excellent electron emission characteristics.
発明の構成
本発明者らはフィールドエミッターについて研究ヲ続け
た結果、炭窒化チタン（ＴｉＣｘＮｙ 、 ０．５≦
ｘ ＋ ｙ ＜： １ ）単結晶エミッター（以下、
Ｔ１ＣＮエミッターと略記する）を酸素ガス中で９００
〜１４００℃で熱処理して、その表面を酸化した後、超
高真空下で１０７Ｖ／ｃｍ以上の強電界を印加スると、
エミッションパターンが変化し、安定な特性を示すフィ
ールドエミッターが得られることを究明し得た。この知
見に基いて本発明を完成した。Structure of the Invention As a result of continuing research on field emitters, the present inventors discovered that titanium carbonitride (TiCxNy, 0.5≦
x + y <: 1) single crystal emitter (hereinafter referred to as
(abbreviated as T1CN emitter) in oxygen gas at 900°C.
After heat-treating at ~1400°C to oxidize the surface, applying a strong electric field of 107 V/cm or more under ultra-high vacuum,
It was found that a field emitter whose emission pattern changes and exhibits stable characteristics can be obtained. The present invention was completed based on this knowledge.
本発明の要旨は、炭窒化チタン単結晶エミッターを酸素
ガス中で９００〜１４００℃で熱処理して、該エミッタ
ーの表面を酸化した後、超高真空下で１０７Ｖ／ｃｍ以
上の強電界を印加することを特徴とするフィールドエミ
ッターの製造方法にある。The gist of the present invention is to heat-treat a titanium carbonitride single crystal emitter at 900 to 1400°C in oxygen gas to oxidize the surface of the emitter, and then apply a strong electric field of 107 V/cm or more under ultra-high vacuum. A method of manufacturing a field emitter is characterized by the following.
本発明において使用する炭窒化チタン単結晶エミッター
は、単結晶ロンドから切り出した、例えば、０．２ Ｘ
Ｏ，２３ｍｍの直方体の先端を電解研磨法により約０
，１μｍの先端径とし、このエミッターを超高真空下で
１５００℃でフラツノユ加熱する。これにより清浄表面
とすると共にチツブ先端を４１００夫（２１１）−面で
覆われた形状のものにする。例えば、Ｔ１ＣＮ ＜ １
１０ ＞エミッターの場合は第１図に示すような形状の
ものとなる。このＴ１ＣＮ ＜ １１０ ＞エミッター
からのエミッションパターンは第２図に示すようになる
。（なお、斜線部分は電子ビームのあたった部分を示す
。）これはチップ先端の（１００）、 （１１１）の
各結晶面から作られる尖った部分からのエミッションに
対応する。このＴ１ＣＮのエミッションパターンは電界
強度の大きい個所からの電子のエミッションで説明でき
る。The titanium carbonitride single crystal emitter used in the present invention is, for example, a 0.2
The tip of the 23mm rectangular parallelepiped was polished to approximately 0 by electrolytic polishing.
, 1 μm in tip diameter, and the emitter is heated flat at 1500° C. under ultra-high vacuum. This provides a clean surface and the tip of the tip is covered with 4100 (211)-planes. For example, T1CN < 1
10 > emitter, the shape is as shown in FIG. The emission pattern from this T1CN <110> emitter is shown in FIG. (Note that the shaded area indicates the area hit by the electron beam.) This corresponds to the emission from the sharp part formed from the (100) and (111) crystal planes at the tip of the chip. This T1CN emission pattern can be explained by the emission of electrons from locations where the electric field strength is large.
このような清浄表面を持ったＴ１ＣＮチップを、酸素ガ
ス中で例えば１０− Ｔｏｒｒの下で９００〜１４００
℃で加熱する。A T1CN chip with such a clean surface is heated at 900 to 1400 in oxygen gas under, for example, 10-Torr.
Heat at ℃.
これにより、表面に酸化物ができる。加熱時間は５Ｌ（
ラングミｚ ７− ）、（Ｌ ＝ １Ｏ−６Ｔｏｒｒ
Ｘ １ ｓｅｃ ）以上になるように選ぶ。加熱温度が
９００℃未満および１４００℃以上では、エミッション
パターンは清浄表面からのエミッションパターンと本質
的に同じであり、又電子放射特性も改善されない。した
がって加熱温度は９００〜１４００℃であることが好ま
しい。チップ表面を酸化した後、超高真空下で全電流を
ｌＯμＡ〜２０μＡにより、３０分以上電子ビームを放
射しく強電界を印加）つづけると、エミッションパター
ンが第２図から第３図に変化する。なお、斜線部分が電
子ビームのあたった個所で１点線部分は清浄表面からの
エミッションパターンヲ示ス。This creates oxides on the surface. Heating time is 5L (
Langmi Z7-), (L = 1O-6Torr
X 1 sec) or more. At heating temperatures below 900° C. and above 1400° C., the emission pattern is essentially the same as that from a clean surface, and the electron emission properties are not improved. Therefore, the heating temperature is preferably 900 to 1400°C. After oxidizing the chip surface, if a strong electric field is applied to emit an electron beam for 30 minutes or more at a total current of 10 μA to 20 μA under ultra-high vacuum, the emission pattern changes from FIG. 2 to FIG. 3. The shaded area shows the area hit by the electron beam, and the dotted area shows the emission pattern from the clean surface.
このようにして得られたフィールドエミッターは、電流
雑音が±０．２９Ｖ）以下、ドリフトは±０．２９６／
ｈｒ以下の優れた特性を示す。その電子放射特性は第４
図に示す通りであり、一定の電流値を示し極めて安定で
ある。この実験条件は真空度５．０ Ｘ １０−”Ｔｏ
ｒｒ、 印加電圧１４００■で行ったものである。The field emitter obtained in this way has a current noise of less than ±0.29V) and a drift of ±0.296/
Shows excellent characteristics of less than hr. Its electron emission characteristics are the fourth
As shown in the figure, it shows a constant current value and is extremely stable. The experimental conditions were a vacuum level of 5.0 x 10-”To
rr, conducted at an applied voltage of 1,400 μm.
なお、このような特性は炭窒化チタン単結晶の方位に関
係なく得られる。Note that such characteristics can be obtained regardless of the orientation of the titanium carbonitride single crystal.
実施例
先端径０．１ｚ１ｍのＴ１Ｃｏ、９ｓ Ｎｏ、ｏ＋ ＜
１１０＞フィールドエミッターを１０−１０〜１０−
”Ｔｏｒｒの超高真空下にセットし、１５００℃にフラ
ッシュ加熱した。この系に酸素ガスを導入し、１ ｘ
ｌ Ｏ−６Ｔｏ ｒｒの真空度にした後、１１００℃で
１０秒間加熱してチップ表面を酸化した。この後、５Ｘ
１０−１１Ｔｏｒｒの真空下で全電流１０μＡを３０分
間以上放射しく １０７Ｖ、／ｃｍ 以上の強電界の印
加）でエミッションパターンを変化させた。Example T1Co with tip diameter 0.1z1m, 9s No, o+ <
110>Field emitter 10-10~10-
The system was set under an ultra-high vacuum of Torr and flash heated to 1500°C. Oxygen gas was introduced into the system, and the
After creating a vacuum level of 1 O-6 Torr, the chip surface was oxidized by heating at 1100° C. for 10 seconds. After this, 5X
The emission pattern was changed by emitting a total current of 10 μA for 30 minutes or more under a vacuum of 10-11 Torr (by applying a strong electric field of 107 V,/cm or more).
上記製法によって得たフィールドエミッターの電流雑音
は±０．２％以下、ドリフトは±０，２％／ ｈ ｒ以
下で、その電流特性は第４図に示す通りであった。The field emitter obtained by the above manufacturing method had a current noise of less than ±0.2%, a drift of less than ±0.2%/hr, and its current characteristics were as shown in FIG.
第１図はＴ１ＣＮ ＜ １１０ ＞エミッターの１５０
０℃フラッシュシュ加熱後の先端形状、第２図は第１図
のエミッターからのエミッションパターン、第３図は第
１図のエミッターチップの表面を酸化処理した後のエミ
ッションパターン、第４図は本発明の方法で製造したエ
ミッターの全電流と時間との関係図であり、この時の実
験条件は真空度５、ＯＸ １０〜”Ｔｏｒｒ、印加電圧
１４００Ｖである。
特許出願人 科学技術庁無機材質研究所長後藤 優Figure 1 shows 150 of T1CN < 110 > emitter.
The shape of the tip after 0°C flash heating, Figure 2 is the emission pattern from the emitter in Figure 1, Figure 3 is the emission pattern after the surface of the emitter tip in Figure 1 has been oxidized, and Figure 4 is the main shape. This is a diagram of the relationship between the total current and time of the emitter manufactured by the method of the invention, and the experimental conditions at this time were a degree of vacuum of 5, OX 10-'' Torr, and an applied voltage of 1400 V. Patent applicant: Science and Technology Agency Inorganic Materials Research Director Masaru Goto
Claims (1)
１４００℃で熱処理して、該エミッターの表面を酸化し
た後、超高真空下で１０＾７Ｖ／ｃｍ以上の強電界を印
加することを特徴とするフィールドエミッターの製造方
法。Titanium carbonitride single crystal emitter in oxygen gas at 900~
A method for manufacturing a field emitter, which comprises heat-treating at 1400° C. to oxidize the surface of the emitter, and then applying a strong electric field of 10^7 V/cm or more under ultra-high vacuum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60219833A JPS6280936A (en) | 1985-10-02 | 1985-10-02 | Method for manufacturing field emitters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60219833A JPS6280936A (en) | 1985-10-02 | 1985-10-02 | Method for manufacturing field emitters |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6280936A true JPS6280936A (en) | 1987-04-14 |
| JPH0577132B2 JPH0577132B2 (en) | 1993-10-26 |
Family
ID=16741760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60219833A Granted JPS6280936A (en) | 1985-10-02 | 1985-10-02 | Method for manufacturing field emitters |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280936A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63279535A (en) * | 1987-05-08 | 1988-11-16 | Natl Inst For Res In Inorg Mater | Manufactute of carbon-nitride niobium field emitter |
-
1985
- 1985-10-02 JP JP60219833A patent/JPS6280936A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63279535A (en) * | 1987-05-08 | 1988-11-16 | Natl Inst For Res In Inorg Mater | Manufactute of carbon-nitride niobium field emitter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577132B2 (en) | 1993-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |