JPS6282817A - Logic circuit - Google Patents

Logic circuit

Info

Publication number
JPS6282817A
JPS6282817A JP60225261A JP22526185A JPS6282817A JP S6282817 A JPS6282817 A JP S6282817A JP 60225261 A JP60225261 A JP 60225261A JP 22526185 A JP22526185 A JP 22526185A JP S6282817 A JPS6282817 A JP S6282817A
Authority
JP
Japan
Prior art keywords
inverter
circuit
discharge
capacitor
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60225261A
Other languages
Japanese (ja)
Inventor
Hideo Takahashi
秀雄 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60225261A priority Critical patent/JPS6282817A/en
Publication of JPS6282817A publication Critical patent/JPS6282817A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00346Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To reduce charging/discharging current and to reduce noise disturbance to an analog circuit by selecting a serial resistance value so that the states of (n) logical elements circuits to be subcircuits connected to a main circuit in parallel are successively changed with delays. CONSTITUTION:When the change of an input signal from an inverter 2 is received by an inverter 6, a MOS transistor (TR) 9 is connected and electrostatic charge accumulated in a capacitor 7 starts to be discharged. On the other hand, the output signal from the inverter 2 is supplied to an inverter 4 through a serial resistor 3. The output of the inverter 4 is changed by a time delay determined by the resistance value of the serial resistor 3 and the input capacity of the inverter 4 to discharge the charge accumulated in the capacitor 5. When respective load current values of TRs 8, 9 are selected as a half of the capacity of an output buffer TR, the capacity of an input data becomes also a half, the ON resistance value of the inverters 4, 6 become about twice and the discharge peak current values of the capacitors 5, 7 become about a half. If the discharge is slightly shifted by inserting the serial resistor 3, noise due to discharge can be reduced to about a half.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は論理回路に関し、特にアナログ回路とデジタル
回路とが混在するMO8集積回路に使用する論理回路に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to logic circuits, and particularly to logic circuits used in MO8 integrated circuits in which analog circuits and digital circuits coexist.

〔従来の技術〕[Conventional technology]

従来、アナログ回路とデジタル回路とが混在するMO8
8M回路に使用する論理回路についても、デジタル回路
のみで構成されるMO8集積回路におけると同様に、負
荷となるバッファ回路等の入力ゲート容量から前段の論
理回路の駆動能力が決められていた。
Conventionally, MO8 has a mix of analog and digital circuits.
As for the logic circuit used in the 8M circuit, similarly to the MO8 integrated circuit composed only of digital circuits, the drive capability of the preceding stage logic circuit is determined from the input gate capacitance of the buffer circuit or the like serving as the load.

第3図は従来の論理回路の一構成例の等価回路図である
。第3因において、33はオープンドフィン型出力バッ
ファ回路を構成するnチャネルのMOSトランジスタ、
30.31はこれ全駆動するインバータ、32はインバ
ータ31の寄生容量とMOSトランジスタ33の入力ゲ
ート容量との和に等価なコンデンサである。
FIG. 3 is an equivalent circuit diagram of a configuration example of a conventional logic circuit. In the third factor, 33 is an n-channel MOS transistor constituting an open dofin output buffer circuit;
Reference numerals 30 and 31 designate an inverter that fully drives these, and 32 a capacitor equivalent to the sum of the parasitic capacitance of the inverter 31 and the input gate capacitance of the MOS transistor 33.

第3図の等何回路において、コンデンサ32の容量値を
01インバータ31を構成する接地電位側のMOSトラ
ンジスタの導通時のオン抵抗を几、スタのオン抵抗を介
してコンデンサ32の電荷を放電することを考える。時
刻tにおけるコンデンサ32の電位をV (t)とする
と V(tl=Vcexp(−t/CR)  ・−・−・・
・−−−−・(1)が成り立つ。時刻tにおいてインバ
ータ31の接地/電位側のMOS)ランジスタに流れる
電流を1 ft)とし、コンデンサ32の電荷tQ(t
)とするとI (tl = dQ(tl/d t : 
−V(t)/R・・・・・・・・・・・・(2)で表さ
れる。これより時刻1=0における電流はI (o) 
= Vc / Rトft り、接地を位1t411 (
7) M OS ) ランジスタのオン抵抗Rが小さけ
れば小さい程電流が大きいことが分かる。一方、(1)
式からコンデンサ32の電位V (t)の変化速度はC
Rの積に依存し、Cが大きいときは几を小さくしなけれ
ばならないことが分かる。
In the circuit shown in FIG. 3, the capacitance value of the capacitor 32 is set to 01, and the on-resistance when the MOS transistor on the ground potential side constituting the inverter 31 is turned on, and the charge of the capacitor 32 is discharged via the on-resistance of the star. think about it. If the potential of the capacitor 32 at time t is V (t), then V(tl=Vcexp(-t/CR) ・-・-・
・------・(1) holds true. Let the current flowing through the MOS transistor on the ground/potential side of the inverter 31 at time t be 1 ft), and the charge tQ of the capacitor 32 (t
), then I (tl = dQ(tl/d t :
-V(t)/R......(2). From this, the current at time 1=0 is I (o)
= Vc/Rtft, grounding position 1t411 (
7) MOS) It can be seen that the smaller the on-resistance R of the transistor, the larger the current. On the other hand, (1)
From the formula, the rate of change of the potential V (t) of the capacitor 32 is C
It can be seen that it depends on the product of R, and that when C is large, the capacity must be made small.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

すなわち、上述した第3図の従来回路において、出力M
OSトランジスタ33の入カゲート容世が太きいく負荷
’IE流が太きいと入力ゲート容量も大きくなる)と、
インバータ31のオン抵抗を小さくする必要があり、コ
ンデンサ32から接地電位への放電電流を増大させる結
果となる。
That is, in the conventional circuit shown in FIG. 3 described above, the output M
If the input gate current of the OS transistor 33 is wide, the input gate capacitance will also be large.
It is necessary to reduce the on-resistance of the inverter 31, which results in an increase in the discharge current from the capacitor 32 to the ground potential.

アナログ回路とデジタル回路が混在する集積回路におい
ては、この放t[流が接地端子への共通抵抗成分等を介
してアナログ回路の特性を劣化させるという問題点があ
る。特に、サンプル・ホールド回路などにおいてサンプ
リング期間からホールド期間に変わる境界時点で、上述
したパルス状の放電電流による雑音が入るとサンプル・
ホールド値の変動が大きく、サンプル・ホールド回路特
性の劣化に直接結び付く。このよりな特性劣化は放t%
流に起因するのみならす、電源からの充電電流によって
も発生する。
In an integrated circuit in which analog circuits and digital circuits coexist, there is a problem that this radiation current deteriorates the characteristics of the analog circuit through a common resistance component to the ground terminal. In particular, when noise due to the above-mentioned pulsed discharge current is introduced at the boundary point when the sampling period changes to the hold period in the sample/hold circuit, etc.
The hold value fluctuates widely, which directly leads to deterioration of sample-and-hold circuit characteristics. This further characteristic deterioration is t%.
This is caused not only by the charging current from the power supply, but also by the charging current from the power source.

本発明の目的は、上述した特性劣化の原因となる光放i
mx流を減少させ、アナログ回路への雑音妨害の少ない
論理回路を提供することである。
The purpose of the present invention is to reduce the amount of light emitted by i
It is an object of the present invention to provide a logic circuit that reduces mx flow and causes less noise interference to analog circuits.

〔問題を解決するための手段〕[Means to solve the problem]

本発明の論理回路は、アナログ回路とデジタル回路とが
混在する半導体集積回路の論理回路において、出力バッ
ファ−トランジスタとこの出力バッファ・トランジスタ
を駆動する論理素子回路とから成る主回路と、この主回
路と並列に接続され前記主回路と同一構成で前記論理素
子回路の入力に直列抵抗が挿入されたN個(N≧1の整
数)の副回路とから構成され、前記各副回路の論理素子
回路の状態が前記主回路の論理素子回路の状態より順次
遅れて変化するように前記各副回路の直列抵抗の抵抗値
が選定されている。
The logic circuit of the present invention is a logic circuit of a semiconductor integrated circuit in which analog circuits and digital circuits coexist. and N (an integer of N≧1) subcircuits connected in parallel with the main circuit and having the same configuration as the main circuit and a series resistor inserted into the input of the logic element circuit, and the logic element circuit of each of the subcircuits. The resistance value of the series resistor of each of the sub-circuits is selected such that the state of the sub-circuit changes sequentially later than the state of the logic element circuit of the main circuit.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照し2て説明す
る。
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例の等価回路図である。FIG. 1 is an equivalent circuit diagram of an embodiment of the present invention.

第1図において、1は主回路、laは副回路、2゜4.
6はインバータ、3は直列抵抗、8,9はlインバータ
4,6の9荷となるMOSトランジスタでアや、その出
力はワイヤードOR接続されている。コンデンサ5,7
はインバータ4,5の寄生容量と、MOSトランジスタ
8,9のゲート容量の和を、説明のためそれぞれ一つの
等価コンデンサで表したものである。以下、相補型MO
8)ランジスタ回路2を例とし、直列抵抗3には伝達ゲ
ート(nチャネルトランジスタとnチャネルトランジス
タのソース、ドレインをそれぞれ接続し、nチャネルト
ランジスタのゲート電極を接地゛電位に、nチャネルト
ランジスタのゲート’を極ヲ電源にそれぞれ接続したも
の)を用いた場合?説明する。
In FIG. 1, 1 is the main circuit, la is the sub circuit, 2°4.
6 is an inverter, 3 is a series resistor, 8 and 9 are MOS transistors serving as the 9 loads of the inverters 4 and 6, and their outputs are wired OR connected. Capacitor 5, 7
is the sum of the parasitic capacitance of the inverters 4 and 5 and the gate capacitance of the MOS transistors 8 and 9, each expressed by one equivalent capacitor for the sake of explanation. Below, complementary MO
8) Taking the transistor circuit 2 as an example, the series resistor 3 is connected to the transmission gate (the source and drain of the n-channel transistor are connected to each other, the gate electrode of the n-channel transistor is connected to the ground potential, and the gate electrode of the n-channel transistor is connected to the ground potential). What if the terminals are connected to the power supply respectively)? explain.

もちろん、直列抵抗3は伝達ゲートでなく、ポリシリコ
ンや拡散抵抗を用いて構成してもよい。
Of course, the series resistor 3 may be constructed using polysilicon or a diffused resistor instead of a transmission gate.

第1図の回路は次のように動作する。本発明の論理回路
を起動するインバータ20入力INがHレベルからLレ
ベルに変化した時、インバータ2の出力はLレベルから
Hレベルに変化する。インバータ2の出力信号の変化を
受けてインバータ6ノ接地9111M081−ラ/ジス
タは導通状態となり、コンデンサ7に蓄えられた電荷は
放°Lを開始し。
The circuit of FIG. 1 operates as follows. When the input IN of the inverter 20 that starts the logic circuit of the present invention changes from H level to L level, the output of the inverter 2 changes from L level to H level. In response to the change in the output signal of the inverter 2, the ground 9111M081 register of the inverter 6 becomes conductive, and the charge stored in the capacitor 7 starts to be released.

インバータ6の出力はHレベルからLレベルに変わる。The output of the inverter 6 changes from H level to L level.

−力、インバータ4にはインバータ2の出力信号が伝達
ゲートを用いた直列抵抗3を通して供給されているため
、インバータ4の入力は直列抵抗3の抵抗値とインバー
タ4の入力容量で決まる時間遅れて変化する。インバー
タ4の出力はこの遅延した信号を受けてHレベルからL
レベルに変化し、コンデンサ5に蓄えられた電荷が放電
される。MOSトランジスタ8,9の負荷電流をそれぞ
れ第3図のMOSトランジスタ330半分に選べば、入
力ゲート容量も約半分となシ、従ってインバータ4,6
のオン抵抗を約2倍にすることができ、コンデンサ5,
7の放電ピーク電流は約にとなる。更に、直列抵抗3の
挿入により僅かに時間をずらしてインバータ6でまず放
1!を開始し、次にインバータ4で放1!勿行なうため
放電に伴う雑音は約半分に減少1せることができる。
Since the output signal of the inverter 2 is supplied to the inverter 4 through the series resistor 3 using a transmission gate, the input of the inverter 4 is delayed by a time determined by the resistance value of the series resistor 3 and the input capacitance of the inverter 4. Change. In response to this delayed signal, the output of inverter 4 changes from H level to L level.
level, and the charge stored in the capacitor 5 is discharged. If the load current of MOS transistors 8 and 9 is selected to be half of that of MOS transistor 330 shown in FIG.
The on-resistance of capacitor 5,
The discharge peak current of No. 7 is approximately. Furthermore, by inserting the series resistor 3, the time is slightly shifted and the inverter 6 first releases 1! and then release 1 with inverter 4! Since this is done naturally, the noise associated with the discharge can be reduced by about half.

第2図は本発明の第2の実施例の等価回路図であり、主
回路10と3個の副回路10aから成り第1の実施例と
ほぼ同様に動作する。第2図において、12,16.2
0は、pチャネルMO8)ランジスタ、13,17.2
1はnチャネルMOSトランジスタであり、pチャネル
、nチャネル各1個で伝達ゲート’を構成している。各
伝達ゲートの抵抗値は所望の遅延時間が得られるように
選ばれ、ここではMOS)ランジスタ20と21゜16
と17.12と13の対によりそれぞれ構成される伝達
ゲートの順番で抵抗値が大きくなるように選定されてい
るものとする。まず、本発明の論理回路を起動するイン
バータ11の入力INがHレベルからLレベルに変化す
ると、インバータ11の出力はLレベルからHレベルに
変化する。
FIG. 2 is an equivalent circuit diagram of a second embodiment of the present invention, which is composed of a main circuit 10 and three subcircuits 10a and operates in substantially the same manner as the first embodiment. In Figure 2, 12, 16.2
0 is p-channel MO8) transistor, 13, 17.2
1 is an n-channel MOS transistor, and one p-channel and one n-channel constitute a transmission gate'. The resistance value of each transmission gate is selected so as to obtain the desired delay time, and the resistance value of each transmission gate is selected to obtain the desired delay time.
and 17. It is assumed that the transmission gates formed by the pairs 12 and 13 are selected such that the resistance values increase in the order of the transmission gates. First, when the input IN of the inverter 11 that starts up the logic circuit of the present invention changes from H level to L level, the output of the inverter 11 changes from L level to H level.

インバータ11の出力信号の変化を受けてインバータ2
4の出力はHレベルからLレベルへと変化し、コンデン
サ25に蓄えられた電荷は放電し始める。次に、MOS
)ランジスタ20.21で構成された伝達ゲートを通し
て遅延した信号がインバータ22の出力信号をHレベル
からLレベルにし、コンデンサ23に蓄えられた電荷を
放電し始める。インバータ18.14は伝達ゲートの抵
抗値にA、じた遅延時間の後に、それぞれ出力信号がH
レベルからLレベルに変化し、コンデンサ19゜15に
蓄えられた電荷が放電される。以上説明したように、第
2図の実施例の回路は4列の並列回路で構成され、各回
路はインバータ24,22゜19.14の順に各インバ
ータの接地側のnチャネルMOSトランジスタが導通し
て放電するので、電流雑音は約Kに減少させることがで
きる。
Inverter 2 receives a change in the output signal of inverter 11.
4 changes from H level to L level, and the charge stored in capacitor 25 begins to discharge. Next, the MOS
) A signal delayed through a transmission gate formed by transistors 20 and 21 changes the output signal of inverter 22 from H level to L level, and the charge stored in capacitor 23 begins to be discharged. Inverters 18 and 14 each output a high signal after a delay time equal to the resistance value of the transmission gate.
The level changes from the level to the L level, and the charges stored in the capacitors 19 and 15 are discharged. As explained above, the circuit of the embodiment shown in FIG. 2 is composed of four rows of parallel circuits, and in each circuit, the n-channel MOS transistors on the ground side of each inverter are turned on in the order of inverters 24, 22°19.14. The current noise can be reduced to about K.

なお、本発明は並列接続された論理回路が2組以上であ
ればよく、その数は限定されるものではない。又、実施
例は相補型MOSトランジスタ回路で説明したが、NM
O8)ランジスタ回路、PMOSトランジスタ回路に適
用しても同様に動作し、同様の効果がある。更に、上述
の実施例では出力バッファ回路を駆動する前段回路はイ
ンパークであるが、インバータ以外の他の論理回路(例
えは2人力の論理積回路)であっても、本発明の技術思
想は適用可能である。
Note that the present invention is not limited to any number as long as there are two or more sets of logic circuits connected in parallel. Furthermore, although the embodiment has been explained using a complementary MOS transistor circuit, NM
O8) Even if applied to a transistor circuit or a PMOS transistor circuit, it operates in the same way and has the same effect. Furthermore, in the above-described embodiment, the front-stage circuit that drives the output buffer circuit is impark, but the technical idea of the present invention applies even if it is a logic circuit other than an inverter (for example, a two-person AND circuit). Applicable.

〔発明の効果〕〔Effect of the invention〕

り入力などの容量負荷に応じて、入力に直列抵抗を挿入
した論理素子回路を並列に接続し、並列接続された各論
理素子回路の出力を順次遅延して変化させるものである
。従って、電流雑音の少ない論理回路が提供できるので
、特性劣化の少ないアナログ回路とメデジタル回路の混
在したMO8集積回路が実現できる効果がある。
In this system, logic element circuits each having a series resistor inserted into the input are connected in parallel according to a capacitive load such as an input, and the output of each logic element circuit connected in parallel is sequentially delayed and changed. Therefore, since a logic circuit with less current noise can be provided, an MO8 integrated circuit having a mixture of analog circuits and digital circuits with less characteristic deterioration can be realized.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の論理回路の第1の実施例の等価回路図
、第2図は第2の実施例の等価回路図、第3図は従来の
回路の等価回路図である。 l、10・・・・・・主回路、la、10a・・・・・
・副回路、2.4,6,11,14,18,22,24
,30.31 ・・・・・・インバータ、3・・・・・
・直列抵抗、5,7,15,19,23゜25.32・
・・・・・コンデンサ、8,9,26,27゜28.2
9.33・・・・・・nチャネルMOSトランジスタ。 、()1、 代坤人 弁理士  内 原   晋(g、、 、’、 
’$ 2 菌 峯3 ガ
FIG. 1 is an equivalent circuit diagram of a first embodiment of the logic circuit of the present invention, FIG. 2 is an equivalent circuit diagram of the second embodiment, and FIG. 3 is an equivalent circuit diagram of a conventional circuit. l, 10... Main circuit, la, 10a...
・Sub circuit, 2.4, 6, 11, 14, 18, 22, 24
,30.31... Inverter, 3...
・Series resistance, 5, 7, 15, 19, 23°25.32・
...Capacitor, 8, 9, 26, 27゜28.2
9.33...n-channel MOS transistor. ,()1, Representative Patent Attorney Susumu Uchihara (g,, ,',
'$ 2 Funamine 3 Ga

Claims (1)

【特許請求の範囲】[Claims] アナログ回路とデジタル回路とが混在する半導体集積回
路の論理回路において、出力バッファ・トランジスタと
この出力バッファ・トランジスタを駆動する論理素子回
路とから成る主回路と、この主回路と並列に接続され前
記主回路と同一構成で前記論理素子回路の入力に直列抵
抗が挿入されたN個(N≧1の整数)の副回路とから構
成され、前記各副回路の論理素子回路の状態が前記主回
路の論理素子回路の状態より順次遅れて変化するように
前記各副回路の直列抵抗の抵抗値が選定されていること
を特徴とする論理回路。
In a logic circuit of a semiconductor integrated circuit in which analog circuits and digital circuits coexist, there is a main circuit consisting of an output buffer transistor and a logic element circuit that drives the output buffer transistor, and a main circuit connected in parallel with this main circuit. It is composed of N sub-circuits (an integer of N≧1) having the same configuration as the logic element circuit and a series resistor inserted into the input of the logic element circuit, and the state of the logic element circuit of each of the sub-circuits is the same as that of the main circuit. A logic circuit characterized in that the resistance value of the series resistor of each of the sub-circuits is selected so as to change sequentially with a delay from the state of the logic element circuit.
JP60225261A 1985-10-08 1985-10-08 Logic circuit Pending JPS6282817A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60225261A JPS6282817A (en) 1985-10-08 1985-10-08 Logic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60225261A JPS6282817A (en) 1985-10-08 1985-10-08 Logic circuit

Publications (1)

Publication Number Publication Date
JPS6282817A true JPS6282817A (en) 1987-04-16

Family

ID=16826541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60225261A Pending JPS6282817A (en) 1985-10-08 1985-10-08 Logic circuit

Country Status (1)

Country Link
JP (1) JPS6282817A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135111A (en) * 1989-10-20 1991-06-10 Toshiba Micro Electron Kk Output buffer circuit
JPH07122992A (en) * 1993-10-26 1995-05-12 Nec Corp Bus driver

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135111A (en) * 1989-10-20 1991-06-10 Toshiba Micro Electron Kk Output buffer circuit
JPH07122992A (en) * 1993-10-26 1995-05-12 Nec Corp Bus driver

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