JPS628604A - Broad band power amplifier - Google Patents

Broad band power amplifier

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Publication number
JPS628604A
JPS628604A JP14862885A JP14862885A JPS628604A JP S628604 A JPS628604 A JP S628604A JP 14862885 A JP14862885 A JP 14862885A JP 14862885 A JP14862885 A JP 14862885A JP S628604 A JPS628604 A JP S628604A
Authority
JP
Japan
Prior art keywords
frequency
signal
capacitor
turned
pin diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14862885A
Other languages
Japanese (ja)
Inventor
Fumiaki Morinaga
森永 文秋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP14862885A priority Critical patent/JPS628604A/en
Publication of JPS628604A publication Critical patent/JPS628604A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To avoid high frequency in a lower limit high frequency by adopting the constitution that a part of an RF signal is fed back at the lower limit only in the frequency band and a switching diode element is changed over by the signal. CONSTITUTION:A part of the RF signal appears at the anode of a detection diode 25 by setting in advance a series resonance circuit comprising an inductor element 23 and a capacitor 24 is resonated in a frequency fL when the RF signal having the lower limit frequency fL of the band is inputted, the signal is detected by a detection diode 25, a switching transistor (TR) 37 is turned on, a switching TR 42 is turned off, a pin diode element 49 is turned off and a pin diode element 55 is turned on. In setting a parallel resonance circuit (comprising an inductive element 48 and a capacitor 47) and a series resonance circuit (comprising an inductive element 53 and a capacitor 54) so as to be resonated in a frequency 2fL in advance, the basic frequency fL is outputted as a gain of an amplifier at an output receptacle 52 and the high frequency 2fL is absorbed in a resistive terminator 58.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、無線機等に使用される増幅器に関し、特に広
帯域、高出力で、高調波の少い増幅器に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an amplifier used in radio equipment and the like, and particularly to an amplifier that has a wide band, high output, and few harmonics.

〔従来の技術〕[Conventional technology]

従来、この種の増幅器は、所要周波a帯域が1オクタ一
ブ以上と広く更に高出力化が要求される為、高調波が多
くこれを除去することが困難であった。例えば増幅器の
入力を所要周波数の下限σ。
Conventionally, this type of amplifier has a wide required frequency band a of one octave or more and is required to have a higher output, so it has been difficult to remove many harmonics. For example, set the input of an amplifier to the lower limit of the required frequency σ.

とする。)に設定したとすると高調波としてこの周波数
fLの倍波2fLが、増幅器の帯域内に有り、整合回路
及びLPF等では、この2fLを除去することは困難で
、高出力でダイナミックレンジの高いトランジスターを
選定する必要があった。
shall be. ), the harmonic 2fL, which is a double of this frequency fL, is within the band of the amplifier, and it is difficult to remove this 2fL using a matching circuit, LPF, etc. It was necessary to select.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

この様に従来の広帯域増幅器は、選定したトランジスタ
素子に依って高調波が決まり、高調波の極めて少い増幅
器を開発するに当っては、まずトランジスタ素子の選定
から始めなければならず、これが非常に困難で、使用条
件も限られたものとなり、又、高調波を極力抑えたトラ
ンジスタ素子は、一般に高価で有9、これ等を複数段使
用する増幅器に於いては、非常に高額となる入点をMし
ていた。
In this way, in conventional wideband amplifiers, the harmonics are determined by the selected transistor elements, and in order to develop an amplifier with extremely low harmonics, we must first start by selecting the transistor elements, which is very important. In addition, transistor elements that suppress harmonics as much as possible are generally expensive9, and amplifiers that use multiple stages of these elements require very expensive inputs. The score was M.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

本発明の広帯域増幅器は、増幅器の出力段に1直列KL
C並列共振回路を接続し、並列にLC直列共振回路を接
続し、更に並列に、抵抗とL(4列共振回路と検波ダイ
オードを直列に接続し、この出力信号を電圧検知回路に
挿入して2信号出力を得、更にこの出力信号に依って、
並・直列共振回路を各々切り換えるべくピンダイオード
素子を切り換える構造としたことを特徴とする。
The broadband amplifier of the present invention has one series KL in the output stage of the amplifier.
Connect the C parallel resonant circuit, connect the LC series resonant circuit in parallel, and further connect the resistor and L in parallel (connect the 4-column resonant circuit and the detection diode in series, and insert this output signal into the voltage detection circuit. 2 signal output is obtained, and further depending on this output signal,
It is characterized by a structure in which pin diode elements are switched to switch between parallel and series resonant circuits.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

図は、本発明の一実施例の回路図で有る。1は入力接栓
、2,3は前置増幅器である。4,12゜21.51は
、結合コンデンサ、5,13は電流制限用抵抗器、6,
8,14.16は電圧分割用抵抗器、7.15は高周波
阻止用コンデンサ、9.17は電界効果トランジスタ(
以下FETと称す)、 i o 。
The figure is a circuit diagram of one embodiment of the present invention. 1 is an input connector, and 2 and 3 are preamplifiers. 4,12゜21.51 is a coupling capacitor, 5,13 is a current limiting resistor, 6,
8, 14 and 16 are voltage dividing resistors, 7.15 is a high frequency blocking capacitor, and 9.17 is a field effect transistor (
(hereinafter referred to as FET), io.

19は高周波阻止用コンデンサ、11.18はチョーク
コイルである。
19 is a high frequency blocking capacitor, and 11.18 is a choke coil.

次に、20,32.38は電源印加用端子で、46゜5
6は結合コンデンサ、23.48.53は共振用インダ
クタ素子、24,47.54は共振用コンデンサでTo
す、インダクタ素子23とコンデンサ24及びインダク
タ索子53.コンデンサ54a、a列共振回路を、イン
ダクタ素子48とコンデンサ、47は並列共振回路を4
成している。
Next, 20, 32, 38 are power supply terminals, 46°5
6 is a coupling capacitor, 23.48.53 is a resonant inductor element, 24, 47.54 is a resonant capacitor, and To
Inductor element 23, capacitor 24, and inductor cable 53. The capacitor 54a and the a-row resonant circuit are connected to the inductor element 48 and the capacitor, and 47 is the parallel resonant circuit.
has been completed.

49.55は、インダクタ索子48とコンデンサ47の
並列共振回路と、インダクタ素子53とコンデン54の
直列共振回路を切り遺えるためのピンダイオード素子で
あり、抵抗50.57は、ピンダイオード素子の負荷抵
抗で、58は無反射終端器でめる。端子52は出力接栓
である◎又、抵抗22は、PE’r17からのルF信号
出力の一部を検波ダイオード素子25に4えるためのも
ので、抵抗26は、11信号の分割用抵抗である。28
は検波ダイオード素子25の負fr抵抗で、27は高周
波阻止用コンデンサである。
49.55 is a pin diode element for continuing the parallel resonant circuit of the inductor wire 48 and the capacitor 47 and the series resonant circuit of the inductor element 53 and the capacitor 54, and the resistor 50.57 is the pin diode element. The load resistor 58 is a non-reflective terminator. Terminal 52 is an output connector ◎ Also, resistor 22 is for inputting a part of the F signal output from PE'r 17 to detection diode element 25, and resistor 26 is a resistor for dividing 11 signals. It is. 28
is a negative fr resistance of the detection diode element 25, and 27 is a high frequency blocking capacitor.

次に、可変抵抗素子29は、検波ダイオード25に依っ
て整流された直流信号を所定の値に設定するだめのもの
であり、抵抗30,36.40は電流制限用で、31は
演算増幅器、抵抗33.34この演算増幅器31の利得
決定用で、35は定電圧ダイオード、39.43は抵抗
、37.42はスイッチングトランジスタ、41は抵抗
40とスイッチングトランジスタ42のベース・エミッ
タ間容量とで生じる時定数を補正するスピードアップ用
コンデンサであり、抵抗44.59は電流制限用、45
.60は高周波阻止用コンデンサである。
Next, the variable resistance element 29 is for setting the DC signal rectified by the detection diode 25 to a predetermined value, the resistors 30, 36, and 40 are for current limiting, and 31 is an operational amplifier; Resistors 33 and 34 are used to determine the gain of this operational amplifier 31, 35 is a constant voltage diode, 39 and 43 are resistors, 37 and 42 are switching transistors, and 41 is generated by the resistor 40 and the base-emitter capacitance of the switching transistor 42. It is a speed-up capacitor that corrects the time constant, and the resistor 44.59 is for current limiting, and the resistor 45
.. 60 is a high frequency blocking capacitor.

このような回路に於いて、入力接栓1にRP倍信号入力
されると、RF倍信号前置増幅器2,3に依って増幅さ
れ、更にPET9.17に依って増幅され、高電力が、
出力接栓52より取り出される。今、仮にこれ等増幅器
の帯域を1オクターブに設計し、下限周波数をfL、上
限周波数をfHs中心周波数をfcとして、周波数fL
を持つRF倍信号、入力接栓1に入力されたとすると、
このRF倍信号持つ周波数九の高調波2fLは、増幅器
が持つ帯域の上限に当り、これを除去することが困難と
なる。本発明では、前述した様な高調波を所望の値に迄
除去することを目的としており、これまで述べてきた様
に、増幅器が持つ帯域の下限周波数fLを持つ凡F信号
が入力された時に、インダクタ素子23.コンデンサ2
4との直列共振回路を周波数fLに共振する様前以って
設定して於けば、検波ダイオード25のアノード測に上
記RF倍信号一部が現れ、検波ダイオード25に依って
検波され直流信号となる。この直流信号は、可変抵抗素
子29に依って所望の値に分割され、抵抗3oを介して
演算増幅器31に入力される。今、この可変抵抗素子2
9.抵抗33.34を前記演算増幅器31の出力電圧が
所定(定電圧ダイオード35のツェナー電圧とトランジ
スタ36のベース・エミッタ間電圧との合成)の電圧以
上になる様調整して於けば、スイッチングトランジスタ
37はON。
In such a circuit, when an RP multiplied signal is input to the input plug 1, it is amplified by the RF multiplied signal preamplifiers 2 and 3, and further amplified by the PET 9.17, and the high power is
It is taken out from the output connector 52. Now, suppose that the band of these amplifiers is designed to be one octave, the lower limit frequency is fL, the upper limit frequency is fHs, the center frequency is fc, and the frequency fL
If an RF multiplied signal with , is input to input connector 1,
The harmonic 2fL of frequency 9 included in this RF multiplied signal is at the upper limit of the band of the amplifier, and it is difficult to remove it. The purpose of the present invention is to remove the above-mentioned harmonics to a desired value. , inductor element 23. capacitor 2
If the series resonant circuit with 4 is set in advance to resonate at the frequency fL, a part of the above RF multiplied signal will appear at the anode measurement of the detection diode 25, and will be detected by the detection diode 25 and converted into a DC signal. becomes. This DC signal is divided into desired values by the variable resistance element 29 and input to the operational amplifier 31 via the resistor 3o. Now, this variable resistance element 2
9. If the resistors 33 and 34 are adjusted so that the output voltage of the operational amplifier 31 is equal to or higher than a predetermined voltage (the combination of the Zener voltage of the constant voltage diode 35 and the base-emitter voltage of the transistor 36), the switching transistor 37 is ON.

スイッチングトランジスタ42はOF’Fとなり、ピン
ダイオード素子49はOFF、 ピンダイオード素子5
5はONとなり、予め並列共振回路(インダクタ素子4
8.コンデンサ47)と直列共振回路(インダクタ素子
53.コンデンサ54)を周波数2fLに共振する様投
定して於けば、並列共振回路は、入力周波数fLでは、
通過域、高調波2fLでは、無限大のインピーダンスを
持つことになり、1g断域となる。逆に直列共振回路は
入力周波afLでは、高インピーダンスを持ち、遮断域
となり、高調波2fLでは無限小のインピーダンスとな
り、通過域となる。この様にして、周波数fLt−持つ
RF傷信号入力接栓1に現われると、基本周波数几は、
出力接栓52に増幅器の利得其のままに出力され、高周
波2fLは無反射終端器58に吸収される。
The switching transistor 42 is turned off, the pin diode element 49 is turned off, and the pin diode element 5 is turned off.
5 is turned on, and the parallel resonant circuit (inductor element 4
8. If the capacitor 47) and the series resonant circuit (inductor element 53 and capacitor 54) are set to resonate at a frequency of 2fL, the parallel resonant circuit will have the following equation at the input frequency fL:
In the passband and harmonic 2fL, it has an infinite impedance, resulting in a 1g cutoff. Conversely, at the input frequency afL, the series resonant circuit has high impedance and becomes a cutoff region, and at the harmonic 2fL it has an infinitesimal impedance and becomes a passband. In this way, when an RF flaw signal with frequency fLt- appears at input plug 1, the fundamental frequency is
It is output to the output connector 52 with the gain of the amplifier unchanged, and the high frequency 2fL is absorbed by the non-reflection terminator 58.

次に、入力周波数を徐々に上昇させていくと、直列共振
回路(インダクタ索子23.コンデンサ24)のインピ
ーダンスが増加し、検波ダイオード25からの直流信号
が減少し、演算項l1li器31の出力電圧が下がり、
定電圧ダイオード35が、カットオフとなり、スイッチ
ングトランジスタ37はOFF、スイッチングトランジ
スタ42はON状態となり、ピンダイオード素子49は
ON、ピンダイオード素子55はOFFとなり、入力f
L以上の周波数fユから九までの周波数は、ピンダイオ
ード索子49を介して出力接栓52に損失無く出力され
る。もちろん、直列共振回路(イ/ダクタ素子23.コ
ンデンサ24)のQと、可変抵抗索子29を変えること
により、スレッシェホールド点の周波数f1.xt−自
由に設定出来ることは言うまでもない。
Next, when the input frequency is gradually increased, the impedance of the series resonant circuit (inductor cord 23, capacitor 24) increases, the DC signal from the detection diode 25 decreases, and the output of the operational term l1li unit 31 increases. The voltage drops,
The constant voltage diode 35 is cut off, the switching transistor 37 is turned off, the switching transistor 42 is turned on, the pin diode element 49 is turned on, the pin diode element 55 is turned off, and the input f
Frequencies from f to f, which are higher than L, are outputted to the output connector 52 through the pin diode cable 49 without loss. Of course, by changing the Q of the series resonant circuit (I/ductor element 23, capacitor 24) and the variable resistance cable 29, the threshold frequency f1. xt- It goes without saying that it can be set freely.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に本発明は、増幅器が持つ周波数帯域の
下限に於いてのみ、RF傷信号一部を帰還出来る様m成
し、この信号に依ってスイッチングダイオード索子を切
り換えられるため、上記下限周波数の高調波が除去出来
、外部信号も不要なため、周辺機器の設計が容易で、し
かも、高価なトランジスタを使用することもなく、安価
な増幅器を製作小米るという効果がある。
As explained above, the present invention is configured such that a part of the RF flaw signal can be fed back only at the lower limit of the frequency band of the amplifier, and the switching diode wire can be switched depending on this signal. Since frequency harmonics can be removed and no external signals are required, it is easy to design peripheral equipment, and there is no need to use expensive transistors, making it possible to manufacture inexpensive amplifiers.

【図面の簡単な説明】[Brief explanation of the drawing]

図は、本発明の一実施例の回路図である。 l・・・・・・入力接栓、2,3・・・・・・前置増幅
器、9゜17・・・・・・電界効果トランジスタ、25
・・・・・・検波ダイオード、31・・・・・・演算増
幅器、37,42’−・・・・・スイッチングトランジ
スタ、49,55・・・・・・ピンダイオード、52・
・・・・・出力接栓、58・・・・・・無反射終端器。
The figure is a circuit diagram of an embodiment of the present invention. l...Input connector, 2,3...Preamplifier, 9゜17...Field effect transistor, 25
...Detection diode, 31...Operation amplifier, 37,42'-...Switching transistor, 49,55...Pin diode, 52.
...Output connector, 58...Non-reflection terminator.

Claims (1)

【特許請求の範囲】[Claims] 微小電力を高出力化する電力増幅回路と、その出力段に
直列にピンダイオードを接続し、このピンダイオードに
並列にLC並列共振回路を接続した回路と、前記ピンダ
イオードの入力側に並列にLC直列共振回路とピンダイ
オード、終端抵抗器を接続した回路と、前記ピンダイオ
ードの入力側に並列に抵抗、LC直列共振回路を直列に
接続し、この出力側に検波回路、電圧検知回路を接続し
、この出力を前記2個のピンダイオードに夫々個々に印
加する様に構成したことを特徴とする広帯域電力増幅器
A power amplification circuit that converts a small amount of power into a high output, a circuit in which a pin diode is connected in series to its output stage, an LC parallel resonant circuit is connected in parallel to the pin diode, and an LC parallel resonant circuit is connected in parallel to the input side of the pin diode. A circuit in which a series resonant circuit, a pin diode, and a terminating resistor are connected, a resistor in parallel to the input side of the pin diode, and an LC series resonant circuit are connected in series, and a detection circuit and a voltage detection circuit are connected to the output side of the circuit. , a wideband power amplifier characterized in that the output is applied to each of the two pin diodes individually.
JP14862885A 1985-07-05 1985-07-05 Broad band power amplifier Pending JPS628604A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14862885A JPS628604A (en) 1985-07-05 1985-07-05 Broad band power amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14862885A JPS628604A (en) 1985-07-05 1985-07-05 Broad band power amplifier

Publications (1)

Publication Number Publication Date
JPS628604A true JPS628604A (en) 1987-01-16

Family

ID=15457035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14862885A Pending JPS628604A (en) 1985-07-05 1985-07-05 Broad band power amplifier

Country Status (1)

Country Link
JP (1) JPS628604A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103874A (en) * 2006-10-18 2008-05-01 Matsushita Electric Ind Co Ltd Power amplifier
JP2014135682A (en) * 2013-01-11 2014-07-24 Tdk Corp High frequency amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008103874A (en) * 2006-10-18 2008-05-01 Matsushita Electric Ind Co Ltd Power amplifier
JP2014135682A (en) * 2013-01-11 2014-07-24 Tdk Corp High frequency amplifier

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