JPS628647U - - Google Patents
Info
- Publication number
- JPS628647U JPS628647U JP10061885U JP10061885U JPS628647U JP S628647 U JPS628647 U JP S628647U JP 10061885 U JP10061885 U JP 10061885U JP 10061885 U JP10061885 U JP 10061885U JP S628647 U JPS628647 U JP S628647U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resistance layer
- insulating film
- utility
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図はこの考案の半導体装置の第１実施例を
示す断面図、第２図はこの考案の半導体装置の第
２実施例を示す平面図、第３図はこの考案の半導
体装置の第２実施例の等価回路を示す回路図、第
４図は第２図の―線断面図、第５図は第２図
の―線断面図である。
２…半導体基板としてのシリコン基板、８，３
６…能動素子としてのトランジスタ、１８，３８
，４０…容量素子としてのコンデンサ、２０，４
２，４４…抵抗、２２，２４…多結晶抵抗層とし
てのポリシリコン層。
FIG. 1 is a sectional view showing a first embodiment of the semiconductor device of this invention, FIG. 2 is a plan view showing a second embodiment of the semiconductor device of this invention, and FIG. 3 is a second embodiment of the semiconductor device of this invention. 4 is a sectional view taken along the line -- in FIG. 2, and FIG. 5 is a sectional view taken along the line -- in FIG. 2. 2...Silicon substrate as a semiconductor substrate, 8,3
6...Transistor as an active element, 18, 38
, 40... Capacitor as a capacitive element, 20, 4
2, 44...Resistor, 22, 24...Polysilicon layer as a polycrystalline resistance layer.
Claims (1)
半導体基板の上面に、絶縁皮膜を介して設置した
多結晶抵抗層を誘電体に用いた容量素子を設置し
たことを特徴とする半導体装置。 (2) 前記容量素子は、前記多結晶抵抗層の上面
に一方の電極を設置するとともに、絶縁皮膜を設
置し、この絶縁皮膜の上面に他方の電極を設置し
たことを特徴とする実用新案登録請求の範囲第１
項に記載の半導体装置。 (3) 前記多結晶抵抗層を用いて抵抗素子を構成
したことを特徴とする実用新案登録請求の範囲第
１項に記載の半導体装置。 (4) 前記多結晶抵抗層は、ポリシリコン層であ
ることを特徴とする実用新案登録請求の範囲第１
項または第３項に記載の半導体装置。[Scope of Claim for Utility Model Registration] (1) A capacitive element using a polycrystalline resistance layer as a dielectric material installed with an insulating film interposed on the upper surface of a semiconductor substrate on which any active element or passive element is formed. A semiconductor device characterized by: (2) Registration of a utility model characterized in that the capacitive element has one electrode installed on the top surface of the polycrystalline resistance layer, an insulating film, and the other electrode installed on the top surface of the insulating film. Claim 1
The semiconductor device described in . (3) The semiconductor device according to claim 1, wherein a resistance element is constructed using the polycrystalline resistance layer. (4) Utility model registration claim 1, characterized in that the polycrystalline resistance layer is a polysilicon layer.
The semiconductor device according to item 1 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10061885U JPS628647U (en) | 1985-07-02 | 1985-07-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10061885U JPS628647U (en) | 1985-07-02 | 1985-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS628647U true JPS628647U (en) | 1987-01-19 |
Family
ID=30970604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10061885U Pending JPS628647U (en) | 1985-07-02 | 1985-07-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS628647U (en) |
-
1985
- 1985-07-02 JP JP10061885U patent/JPS628647U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0510604A3 (en) | Semiconductor device and method of manufacturing the same | |
| JPS628647U (en) | ||
| JPS60942U (en) | semiconductor equipment | |
| JPS6364041U (en) | ||
| JPH0328762U (en) | ||
| JPS63118249U (en) | ||
| JPS61119362U (en) | ||
| JPS6370165U (en) | ||
| JPH0236056U (en) | ||
| JPH0383939U (en) | ||
| JPS6251740U (en) | ||
| JPH0467355U (en) | ||
| JPH02137053U (en) | ||
| JPH02118955U (en) | ||
| JPS61201348U (en) | ||
| JPS5832662U (en) | semiconductor equipment | |
| JPS61162065U (en) | ||
| JPH0316328U (en) | ||
| JPH02725U (en) | ||
| JPS6339954U (en) | ||
| JPH0470735U (en) | ||
| JPS6236552U (en) | ||
| JPS61166539U (en) | ||
| JPH0426537U (en) | ||
| JPH02137054U (en) |