JPS6286841A - High frequency hybrid integrated circuit - Google Patents

High frequency hybrid integrated circuit

Info

Publication number
JPS6286841A
JPS6286841A JP60229315A JP22931585A JPS6286841A JP S6286841 A JPS6286841 A JP S6286841A JP 60229315 A JP60229315 A JP 60229315A JP 22931585 A JP22931585 A JP 22931585A JP S6286841 A JPS6286841 A JP S6286841A
Authority
JP
Japan
Prior art keywords
circuit
high frequency
hybrid integrated
integrated circuit
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60229315A
Other languages
Japanese (ja)
Other versions
JPH0365896B2 (en
Inventor
Masaharu Koyama
小山 正治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60229315A priority Critical patent/JPS6286841A/en
Publication of JPS6286841A publication Critical patent/JPS6286841A/en
Publication of JPH0365896B2 publication Critical patent/JPH0365896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/17—Containers or parts thereof characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons

Landscapes

  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

PURPOSE:To stably operate a high frequency hybrid integrated circuit by covering a high frequency circuit with a metal film coated on a cap and metal conductors to become an earth surface to simplify working steps, thereby readily shielding the circuit. CONSTITUTION:A circuit board 2 composed of a high frequency circuit is entirely enclosed with metal conductors 1 to become an earth surface, a metal film 4 covered on a plastic cap 3 and a conductive adhesive 5 for connecting therebetween to be electrically shielded from the exterior. As a result, even when a metal plate is covered to be, for example, hermetically sealed from the exterior by the hybrid integrated circuit, the circuit is not affected by any influence but stably operated. Particularly, large effect is obtained in a high frequency high output hybrid integrated circuit and a filter circuit for handling large power in high frequency.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高周波混成集積回路に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a high frequency hybrid integrated circuit.

〔従来の技術〕[Conventional technology]

高周波において動作する回路では、線路パターン、ある
いは、各種使用部品より高周波成分が放射され、まわり
の他の回路に悪影響を与えることが多い。
In circuits that operate at high frequencies, high frequency components are emitted from the line pattern or various used components, often having an adverse effect on other circuits around them.

このようなまわり込みを防止し、システムとしての全体
の回路の安定化を図るため、当該高周波部分を特別にし
つらえた金属板でおおうことが一般的に行われている。
In order to prevent such interference and stabilize the entire circuit as a system, it is common practice to cover the high frequency portion with a specially prepared metal plate.

さらに、前記悪影響の効果はより高周波及び高電力にな
る程、顕著となり、この様な部分には、部品に密接して
金属板でシールドされる。
Furthermore, the above-mentioned adverse effects become more pronounced as the frequency and power become higher, and such areas are shielded with metal plates in close contact with the components.

一方、近年機器の小形化が急速に進み、このため、高周
波混成集積回路も面積的2体積的に小形化が余儀なくさ
れ、内部回路は益々稠密となった。
On the other hand, in recent years, the miniaturization of devices has progressed rapidly, and as a result, high-frequency hybrid integrated circuits have been forced to become smaller in terms of area and volume, and internal circuits have become increasingly dense.

このような高集積度の高周波回路では、シールドのため
の金属板のアースの取り方によす、混成集積回路上のア
ース電位と、シールド金属板とのアース電位との間に電
位差が生じ、混成集積回路上の線路パターンインピーダ
ノス、あるいはコイル等の定数に相互作用を与え、回路
の整合条件に変更を生じさせ、発振等が生じろという不
具合があった。
In such highly integrated high frequency circuits, a potential difference occurs between the ground potential on the hybrid integrated circuit and the ground potential of the shield metal plate due to the way the metal plate for shielding is grounded. There was a problem in that it interacted with the line pattern impedance on the hybrid integrated circuit or the constants of the coils, etc., causing changes in the matching conditions of the circuit, and causing oscillations and the like.

前記不具合を解決するための従来技術としては第2図に
示すものがある。この技術で(よ、アースとなる金属導
体(1)に固着された回路基板(2)を絶縁性のかつ高
周波において損失の少ない樹脂(6)で全面を塗布波ふ
くし、さらに金属導体(1)と電気的に接続がとれろ様
に導電性例U1(71を塗布、またはモールドして回路
をシールドしようとするものである。
A conventional technique for solving the above problem is shown in FIG. With this technology, the entire surface of the circuit board (2) fixed to the metal conductor (1) that serves as the ground is coated with a resin (6) that is insulating and has low loss at high frequencies, and then the metal conductor (1) The purpose is to shield the circuit by coating or molding conductive example U1 (71) so that an electrical connection can be established.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の技術は、以上の様に、回路基板全面を絶縁性、高
周波特性の良い樹脂で塗布法によりコーティングしなけ
ればならず、さらにその上から導電性樹脂を塗布、また
はモールドすることが必要で封止工程が複雑となり、人
手に頼ることが多く、高価なものになる欠点があった。
As described above, with conventional technology, the entire surface of the circuit board must be coated with a resin that has good insulation and high-frequency characteristics, and then it is necessary to coat or mold a conductive resin on top of that. The sealing process is complicated, often requires manual labor, and is expensive.

本発明は、上記の欠点を除去するためになされたもので
、作業工程を簡略化でき、容易に高周波回路をシールド
することができ安定に動作する高周波混成集積回路を提
供するものである。
The present invention has been made to eliminate the above-mentioned drawbacks, and provides a high-frequency hybrid integrated circuit that can simplify the working process, easily shield the high-frequency circuit, and operates stably.

〔問題点を解決するための手段〕[Means for solving problems]

本発明における装置は、混成集積回路に用いられるプラ
スチックキャップに金属コートを施し、キャップにコー
ティングされた金属被膜をアース面となる金属導体と導
電性接着剤で固着したものである。
In the device according to the present invention, a plastic cap used in a hybrid integrated circuit is coated with a metal, and the metal film coated on the cap is fixed to a metal conductor serving as a ground plane with a conductive adhesive.

〔作 用〕[For production]

この様にすれば、高周波回路は、キャップにコーティン
グされた金属被膜及びアース面となる金属導体によって
おおわれることになり、高周波回路は、電気的に他の回
路とシールドされろ。
In this way, the high frequency circuit will be covered by the metal film coated on the cap and the metal conductor serving as the ground plane, and the high frequency circuit will be electrically shielded from other circuits.

〔発明の実施例〕[Embodiments of the invention]

第1図に本発明の一実施例を示す。図において(1)は
アース面(放熱板をかねることもある)となる金属導体
、(2)は前記金属導体(1)上に固着された高周波回
路基盤、(3)は高周波回路基盤(2)を保護するプラ
スチックキャップ、(4)はこのプラスチックキャップ
(3)内面に被ふくされな金属被膜であり、(5)は前
記金属被膜(4)とアース面となる金属導体(1)とを
電気的かつ機械的に接続する導電性接着剤である。
FIG. 1 shows an embodiment of the present invention. In the figure, (1) is a metal conductor that serves as a ground plane (sometimes serving as a heat sink), (2) is a high-frequency circuit board fixed on the metal conductor (1), and (3) is a high-frequency circuit board (2). ), (4) is a metal coating that is not covered on the inner surface of this plastic cap (3), and (5) is a plastic cap that protects the metal coating (4) and a metal conductor (1) that serves as a ground plane. A conductive adhesive that provides electrical and mechanical connections.

以上の構成において、高周波回路が構成された回路基盤
(2)は、アース面となる金属導体(1)、プラスチッ
クキャップ(3)に被ふくされな金属被膜(4)、及び
、これらの間を接続するための導電性接着剤(5)を通
じて全面的に囲まれ、外部より電気的にシールドされる
。
In the above configuration, the circuit board (2) on which the high frequency circuit is configured includes a metal conductor (1) serving as a ground plane, a metal coating (4) that is not covered by the plastic cap (3), and a space between them. It is completely surrounded by a conductive adhesive (5) for connection and is electrically shielded from the outside.

この結果、例えば、当該混成集積回路に外部より密着し
て金属板がおかれた場合においても、該回路は何の影響
も受けることがなく、安定に動作させることができる。
As a result, even if, for example, a metal plate is placed in close contact with the hybrid integrated circuit from the outside, the circuit is not affected in any way and can operate stably.

特に本発明によれば、高周波において大電力を扱う高周
波高出力混成集積回路、及びフィルタ回路において大き
な効果が得られるものである。
Particularly, according to the present invention, great effects can be obtained in high-frequency, high-output hybrid integrated circuits and filter circuits that handle large amounts of power at high frequencies.

〔発明の効果〕〔Effect of the invention〕

以上の様に、本発明によれば、高周波回路を2種類の樹
脂を塗布等によりおおう等の複雑な工程を通す必要がな
く、安価に高周波混成集積回路を構成することができ、
また精度よく回路をシールドできる効果がある。
As described above, according to the present invention, there is no need to go through a complicated process such as coating a high frequency circuit with two types of resin, and a high frequency hybrid integrated circuit can be constructed at low cost.
It also has the effect of accurately shielding the circuit.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す。第2図は従来の技術
を示す断面図である。 (1)はアース面となる金属導体、(4)はキャップに
固着された金属被膜、(5)は導電性接着剤である。 なお図中同一符号は同一、又は相当部分を示す。
FIG. 1 shows an embodiment of the invention. FIG. 2 is a sectional view showing a conventional technique. (1) is a metal conductor serving as a ground plane, (4) is a metal coating fixed to the cap, and (5) is a conductive adhesive. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims]  アース面となる金属導体と、回路を保護するプラスチ
ックキャップでおおわれた混成集積回路において、上記
プラスチックキャップ内面または全面に金属被膜を施し
、その金属被膜が当該回路の主要部分と絶縁された状態
で、前記アース面となる金属導体と導電性接着剤で固着
された事を特徴とする高周波混成集積回路。
In a hybrid integrated circuit that is covered with a metal conductor that serves as a ground plane and a plastic cap that protects the circuit, a metal coating is applied to the inner surface or the entire surface of the plastic cap, and the metal coating is insulated from the main part of the circuit. A high frequency hybrid integrated circuit characterized in that the metal conductor serving as the ground plane is fixed with a conductive adhesive.
JP60229315A 1985-10-14 1985-10-14 High frequency hybrid integrated circuit Granted JPS6286841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60229315A JPS6286841A (en) 1985-10-14 1985-10-14 High frequency hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60229315A JPS6286841A (en) 1985-10-14 1985-10-14 High frequency hybrid integrated circuit

Publications (2)

Publication Number Publication Date
JPS6286841A true JPS6286841A (en) 1987-04-21
JPH0365896B2 JPH0365896B2 (en) 1991-10-15

Family

ID=16890211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60229315A Granted JPS6286841A (en) 1985-10-14 1985-10-14 High frequency hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS6286841A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677251U (en) * 1993-03-29 1994-10-28 京セラ株式会社 Package for storing semiconductor devices
US5444297A (en) * 1992-06-17 1995-08-22 Mitsubishi Denki Kabushiki Kaisha Noise resistant semiconductor power module
US5687470A (en) * 1991-11-06 1997-11-18 Nokia Mobile Phones Limited Method for forming an RF shielded enclosure
US5703761A (en) * 1995-09-07 1997-12-30 Siemens Aktiengesellschaft Shielding for flat modules
EP0872889A3 (en) * 1997-04-16 2000-04-19 DaimlerChrysler Aerospace Aktiengesellschaft Housing for electronic components
KR100455015B1 (en) * 1996-05-08 2005-01-17 더블유.엘. 고어 앤드 어소시에이트스, 인코포레이티드 A lid assembly for shielding electronic components from emi/rfi interferences
JP2015126025A (en) * 2013-12-25 2015-07-06 株式会社東芝 Semiconductor package
JP2015126289A (en) * 2013-12-25 2015-07-06 株式会社東芝 Semiconductor package
US9343793B2 (en) 2014-02-07 2016-05-17 Kabushiki Kaisha Toshiba Millimeter wave bands semiconductor package
US9343794B2 (en) 2014-02-07 2016-05-17 Kabushiki Kaisha Toshiba Millimeter wave bands semiconductor package
US9536843B2 (en) 2013-12-25 2017-01-03 Kabushiki Kaisha Toshiba Semiconductor package and semiconductor module

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5629681B2 (en) 2009-05-26 2014-11-26 株式会社インキュベーション・アライアンス Carbon material and manufacturing method thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5687470A (en) * 1991-11-06 1997-11-18 Nokia Mobile Phones Limited Method for forming an RF shielded enclosure
US5444297A (en) * 1992-06-17 1995-08-22 Mitsubishi Denki Kabushiki Kaisha Noise resistant semiconductor power module
JPH0677251U (en) * 1993-03-29 1994-10-28 京セラ株式会社 Package for storing semiconductor devices
US5703761A (en) * 1995-09-07 1997-12-30 Siemens Aktiengesellschaft Shielding for flat modules
KR100455015B1 (en) * 1996-05-08 2005-01-17 더블유.엘. 고어 앤드 어소시에이트스, 인코포레이티드 A lid assembly for shielding electronic components from emi/rfi interferences
EP0872889A3 (en) * 1997-04-16 2000-04-19 DaimlerChrysler Aerospace Aktiengesellschaft Housing for electronic components
JP2015126025A (en) * 2013-12-25 2015-07-06 株式会社東芝 Semiconductor package
JP2015126289A (en) * 2013-12-25 2015-07-06 株式会社東芝 Semiconductor package
US9536843B2 (en) 2013-12-25 2017-01-03 Kabushiki Kaisha Toshiba Semiconductor package and semiconductor module
US9343793B2 (en) 2014-02-07 2016-05-17 Kabushiki Kaisha Toshiba Millimeter wave bands semiconductor package
US9343794B2 (en) 2014-02-07 2016-05-17 Kabushiki Kaisha Toshiba Millimeter wave bands semiconductor package

Also Published As

Publication number Publication date
JPH0365896B2 (en) 1991-10-15

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