JPS6289310A - Magnetically soft thin film - Google Patents

Magnetically soft thin film

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Publication number
JPS6289310A
JPS6289310A JP23046685A JP23046685A JPS6289310A JP S6289310 A JPS6289310 A JP S6289310A JP 23046685 A JP23046685 A JP 23046685A JP 23046685 A JP23046685 A JP 23046685A JP S6289310 A JPS6289310 A JP S6289310A
Authority
JP
Japan
Prior art keywords
thin film
magnetic
nitrogen
magnetic thin
coercive force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23046685A
Other languages
Japanese (ja)
Other versions
JPH0746654B2 (en
Inventor
Masatoshi Hayakawa
正俊 早川
Kazuhiko Hayashi
和彦 林
Osamu Ishikawa
理 石川
Yoshitaka Ochiai
落合 祥隆
Hideki Matsuda
秀樹 松田
Hiroshi Iwasaki
洋 岩崎
Koichi Aso
阿蘇 興一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP60230466A priority Critical patent/JPH0746654B2/en
Publication of JPS6289310A publication Critical patent/JPS6289310A/en
Publication of JPH0746654B2 publication Critical patent/JPH0746654B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain the titled soft magnetic thin film having a high permeability, an excellent corrosion-resisting property, an excellent abrasion-resisting property of high degree of hardness, and thermal stability without lowering the density of saturated magnetic flux and also without increasing coercive force by a method wherein nitrogen N is added to the magnetic thin film having Fe, Co, Si and Al as the main components, and the composition of the component of the magnetic thin film is specified. CONSTITUTION:A magnetic thin film is composed of Fe, Co, Si and Al as the main component, the magnetic thin film is composed of Co of 0.5-15atom%, Si of 9-17atom%, Al of 7-15atom%, N of 0.01-10atom% and the remainder of Fe, and excellent serviceability is given to the magnetic thin film. If the content of nitrogen N is 0.01atom% or less, it is considered insufficient, and if said content exceeds 10atom%, the permeability of the magnetic thin film is decreased on the contrary, and magnetic coercive force Hc is made larger. It is desirable that the magnetically soft thin film is manufactured by performing a vapor deposition method, an ion-implanting method and the like. Also, pertaining to the introducing method of nitrogen N into the magnetic thin film, there are the method in which vapor deposition and the like is performed in the atmosphere containing nitrogen gas and the nitrogen N introducing method using the compound consisting of nitrogen N and at least a kind of element selected from the above-mentioned material and the alloy of the remaining component as the source of evaporation.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は例えばi%lI*磁気ヘットに用いて好適な軟
l性@膜に係わる。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a flexible film suitable for use in, for example, an i%lI* magnetic head.

〔発明の)!4要〕 本発明は、窒素含有のFe −Co −Si −Al系
組成の軟磁性清除であり、その組成の特定により保磁ノ
月(Cが小さく透磁率μが1九<特に耐蝕性及び硬度に
3くれた転磁4I+薄験を得るものである。
[of invention]! 4 Requirements] The present invention is a soft magnetic purifier having a nitrogen-containing Fe-Co-Si-Al system composition, and by specifying the composition, the coercivity is small (C is small and the magnetic permeability μ is 19 < especially corrosion resistance and The hardness is increased by 3, and the magnetization is 4I + 0.

〔従来の技術〕[Conventional technology]

各種磁気記録内生装置uにおいて、I楠密度記録化、西
国波数化の要求が晶まり、これに対応1.て18iい飽
和磁化、商い保磁力の磁気記録媒体が用いられる。この
種の磁気記録媒体としては、Fe、 Co、 Ni等の
強磁性金属のわ)末を用いたいわゆるメタルテープや、
’J!t! Mff’[金属材木1をベースフィルム上
に被着して成るいわゆる蒸着テープなどが用いられるに
至っている。
In various magnetic recording endogenous devices u, demands for I Kusunoki density recording and Saikoku wave number have crystallized, and in response to these demands, 1. A magnetic recording medium with a saturation magnetization of 18i and a coercive force is used. Examples of this type of magnetic recording media include so-called metal tapes using powder of ferromagnetic metals such as Fe, Co, and Ni;
'J! T! Mff'[So-called vapor-deposited tapes made of metal lumber 1 coated on a base film have come to be used.

これに伴い、この種の磁気記録媒体に対する磁気ヘット
としては、高い飽和磁束密度と−j透磁率のヘラ]材利
によることが要求されると共に、磁気Wノ月+[が小さ
く磁歪が零であり、また保磁力が小さく、更にヘッド材
料としてできるだけ、耐摩耗性が西く、耐蝕性にすぐれ
ているなど、磁気時111はもとより、化学的に安定で
機械的特セ1にすくれζいるごとなどが要求される。
Along with this, magnetic heads for this type of magnetic recording medium are required to be made of a material with high saturation magnetic flux density and -j magnetic permeability, and also have a small magnetic W +[ and zero magnetostriction. It also has a small coercive force, and has the highest abrasion resistance and corrosion resistance possible as a head material.It is not only magnetically stable, but also chemically stable and has excellent mechanical properties. etc. are required.

一方、A密度記録化に伴って記録トランク幅、したがっ
て磁気ヘッドにおける、作動磁気ギ中ツブのトランク幅
の狭小化が要求され、この要求にり・1応し7、しかも
特に多トラツク磁気ヘットにおい′(著り、 <量産性
の向トをはかるご、とができるものとしく非磁性ないし
は磁性基板1=に転磁牲清除による磁気ヘソl’ ml
−j’を被着形成する薄映技術蚤−用いた薄腺磁気−・
ソ1の普及かめ、ざましい。この種の軟磁性清除と+2
ではFe、 Aβ、Siを1−成分とするセンダスト合
金1116が?1′11を集めζいる。
On the other hand, with the shift to A-density recording, it is required to reduce the recording trunk width, and therefore the trunk width of the operating magnetic gear in the magnetic head. (In particular, with the aim of mass production, it is possible to apply a magnetic heel l' ml to a non-magnetic or magnetic substrate by demagnetizing it.
- Thin film technology used to deposit j' - Thin gland magnetism used -
The spread of SO1 is shocking. This kind of soft magnetic cleaning and +2
What about Sendust alloy 1116, which has Fe, Aβ, and Si as one component? Collect 1'11 and have ζ.

このセンダスト合i&薄映は、1口;い飽和磁束密度B
sを有し、比較的、lIi AM! IO:を自するの
で、1.述したメタルテープ等のように+l’4い残留
磁束%!Ifをイ14る磁気記録媒体に対しても適用す
ることが可能である。
This sendust combination i & thin film has one mouth; saturation magnetic flux density B
s and comparatively lIi AM! IO:, so 1. +l'4% residual magnetic flux like the metal tape mentioned above! It is also possible to apply the present invention to magnetic recording media that have 14 If.

しかしながら、このセンダスト合金薄膜は比較内面硬度
を有するものの例えばフェライト材等に比し耐摩耗性及
び耐蝕性に劣る。また、このセンダスト合金薄膜は佳較
的比抵抗が低いために、これを磁気ヘットの二1゛〆と
して使用した場合には、いわゆる渦電流+i4によるl
+′モ周波領域での透磁率の(lkトが問題となっ゛(
おり、1(°を周波数領域で充分lf肉産生出力得られ
ないおそれがあるなどの問題点がある。
However, although this sendust alloy thin film has comparative inner hardness, it is inferior in wear resistance and corrosion resistance compared to, for example, ferrite materials. In addition, since this Sendust alloy thin film has a relatively low resistivity, when it is used as a 21゛゛〆 of a magnetic head, it causes a so-called eddy current +i4.
The magnetic permeability (lk) in the
However, there is a problem that a sufficient LF meat production output may not be obtained in the 1(°) frequency domain.

これに比し、センダスト合金清除の代わりに面周波数領
域でのj3磁率の(1(トが少なく乱い飽和磁束密度B
sを有]る非晶質(アモルファス)磁性合金材¥1を用
いることが嵩えられ°(いるが、この非晶vM磁性合金
祠利は銅ゑ馴21に姉点かあり、長時間の加熱や熱ザイ
クルによ幻1率が大きく劣化し自lIZ効率が悪くなる
。特に結晶化の(IJ能(!l:が大きいので5 (1
(1’c以−1の?品度を長時間加えるごとはできない
ものであり、これがため、磁気ヘットの製造−1,稈に
おい“ζ例えばガラス融着のように500℃以1−の温
度での処理を必要とする1−程を採ることは好ましくな
いなどの問題点がある。
In contrast, instead of cleaning the sendust alloy, the j3 magnetic coefficient (1) in the surface frequency region is less disordered and the saturation magnetic flux density B
It is recommended to use an amorphous magnetic alloy material with a Due to heating and thermal cycles, the phantom 1 rate deteriorates greatly, and the self-IZ efficiency deteriorates.Especially, the crystallization (IJ ability (!l:) is large, so 5 (1
(It is impossible to apply a quality of 1'c or more for a long time, and for this reason, the manufacturing of magnetic heads-1, culm odor "ζ") There are problems such as the fact that it is not preferable to use 1- or so, which requires further processing.

このような状況から、さらに良好な軟磁気特性をボず軟
磁性+AI4の研究が進められ、例えば山本達治・千葉
久肖共著、1日本金属学会誌」第14巻B、第2 ’M
(1150年)には、Fe、 Co、 Siを主成分と
するPa−Co−5口系合金材祠か良好な軟磁気特性を
小Jことが幸11告されてし)る。
Under these circumstances, research on soft magnetic + AI4 with even better soft magnetic properties is progressing, for example, in Tatsuharu Yamamoto and Hisashi Chiba, 1 Journal of the Japan Institute of Metals, Vol. 14 B, No. 2 'M.
In 1150, it was reported that a Pa-Co-5 alloy material containing Fe, Co, and Si as main components had good soft magnetic properties.

しかしながら、ごのFe−Go−5L糸合金材4J、極
め゛(脆弱で実用i11に乏しく、そのまま磁気ヘット
の:1゛r1゛としζ用いることには問題がある。
However, the Fe-Go-5L thread alloy material 4J is extremely brittle and has poor practical use, and there is a problem in using it as it is as a magnetic head.

〔発明が解決しよ・うと4る問題点〕 本発明は一■述した諸問題の改善をはかり、磁気特性、
ずなわら飽和磁束密度Bsが人、保磁ノ月1Cが小、磁
歪λSが殆ど零、磁気光カ性が小さく、しかも機械的特
性、すなわち、商い硬度を有し、耐摩比重にず(れ、史
に熱的に安定で耐熱性が向く、また化学安定illに、
4゛なわら耐蝕14+にすくれた軟fdl 4’)、’
r?J膜を■に(+4するものである。
[Problems that the invention seeks to solve] The present invention aims to improve the problems mentioned above, and improves magnetic properties,
The saturation magnetic flux density Bs is small, the coercive force 1C is small, the magnetostriction λS is almost zero, the magneto-optical strength is small, and it has mechanical properties, that is, commercial hardness, and wear resistance and specific gravity. , thermally stable and heat resistant, and chemically stable,
4' Soft FDL with corrosion resistance of 14+ 4'),'
r? This increases the J film to (+4).

〔問題Jjλを解決するための手段〕[Means for solving problem Jjλ]

本発明は、FLう、(:θ、 Si及び八βを1成分と
する磁性清除に窒#Nを添加ずイJことにより飽和磁束
密度等を低トすることなくl−述した諸問題を改善する
ことができることを見出したことに基づくものである。
The present invention solves the problems described above without reducing the saturation magnetic flux density etc. by not adding nitrogen #N to the magnetic cleaning material containing FL, (: θ, Si and 8β as one component). It is based on the discovery that improvements can be made.

“4なわら、本発明は、lie、 Go、 5IBLび
Anを一1=成分とし、その組成を、COが0.5〜1
5原子%、SlがIJ〜17原子%、^βが7〜15原
子%、Nが0.01〜IO)阜子%、残部Feとする。
4, the present invention uses lie, Go, 5IBL, and An as components, and the composition is adjusted such that CO is 0.5 to 1.
5 atomic %, Sl is IJ~17 atomic %, ^β is 7~15 atomic %, N is 0.01~IO) %, and the balance is Fe.

尚、上述の組成をfrする本発明による軟磁性薄映の1
9厚とし’(t−di、 10人以十1鶴以トであるこ
とが好ましく、さらに10人以−に100μm以下であ
ることがより好ましい。
Incidentally, one of the soft magnetic thin film according to the present invention having the above-mentioned composition fr.
The thickness is preferably 10 to 11 mm, and more preferably 10 to 100 μm or less.

〔作用〕[Effect]

上述したように本発明による転磁竹薄股は、Fe+Co
、 Si及びA/をヨ1:成分とするもので、 ^βの
添加によっ”’CFe−Co −Sl系軟磁性体に比し
、保磁力や磁歪の小さい透磁率の高い軟磁性体が得られ
るものであるが、加えて本発明においては、これに窒素
Nを含有することに特徴があり、これにより、特に透磁
率及び硬度が大幅に改善され比抵抗が向−1−する。
As mentioned above, the magnetic bamboo strip according to the present invention is made of Fe+Co
, Si and A/ as components, and the addition of ^β creates a soft magnetic material with high magnetic permeability and low coercive force and magnetostriction compared to CFe-Co-Sl soft magnetic materials. In addition, the present invention is characterized by containing nitrogen N, which significantly improves particularly the magnetic permeability and hardness, and improves the specific resistance.

本発明考等の実験によれば、磁性WJ験中の窒素Nの含
有量が増加するのに伴って透磁率が急激に1i111−
+7、例えば窒素Nの含有量が約1.7原子%で窒素N
を全く含まない磁性WX模に比べて透磁率がおよそ2.
5倍にも達することが分かった。また、この透磁率は、
その磁性薄膜に含まれる窒素Nの含有量が余り多くなる
と却っ”ζ低下してくる。しかU7ながら、この研Pト
薄映は窒素NQ)@自!dの増加とともに比JIV抗が
増加する、1とから、より1141周波数領域での使用
、例えばデジタルV T R用峨気ヘット等への使用を
8えると、ト4の含〈1膜Mはto+g<子%程度まで
が実用+1■能となる。
According to experiments conducted in the present invention, as the nitrogen content increases during magnetic WJ tests, the magnetic permeability rapidly increases.
+7, for example, when the nitrogen N content is about 1.7 at%
The magnetic permeability is approximately 2.
It was found to be up to 5 times as much. In addition, this magnetic permeability is
If the content of nitrogen N contained in the magnetic thin film increases too much, the ζ will actually decrease.However, although this is U7, the specific JIV resistance increases as nitrogen NQ)@self!d increases. If we consider the use in the 1141 frequency range, for example, the use in high-temperature heads for digital VTRs, etc., we can see that the film M has a practical value of +1 up to the extent of to+g<%. ■Becomes Noh.

また、磁性薄膜に含まれるNの含有量の増加に伴っC、
ビッカース硬1t4)急激に篩くス5′す、N(1)含
有量が約2原了%を越えるとほぼ一定の硬近を確保する
ことができイ)ことが分か−、た。
In addition, as the N content in the magnetic thin film increases, C,
It was found that when the N(1) content exceeds about 2%, a nearly constant hardness can be secured when the Vickers hardness is rapidly sieved.

つまり、本発明に係るP((−Oo−8i−^p糸磁P
1薄睦に金石される窒素Nのへ自損(1i、その含有量
が0.01原イ%未満(あると充分な効果が期待ごきす
、またその含fr♀が1()1い6%を越えると却っ(
透磁率が低トしCしまい保磁)月10も大きくなってし
まうおそれがあることから0.01〜1()1京子%に
選定Jる。
In other words, P((-Oo-8i-^p thread magnetic P) according to the present invention
Nitrogen N contained in a thin layer (1i) is expected to have a sufficient effect if its content is less than 0.01%, and its content is 1()16 If it exceeds % (
Since there is a risk that the magnetic permeability will be low and the coercivity will be large, a value of 0.01 to 1 ()1 Kyoko% is selected.

また、本発明による軟磁性薄腺におい′(、CoQ)金
石♀は0.5〜1519子%とする。これはこの範囲を
外れると、保磁力の増大やi3 fd’z率の低1・が
見られるごとによる。
In addition, the soft magnetic thin powder according to the present invention (CoQ) gold is 0.5 to 1519%. This is because when outside this range, an increase in coercive force and a low i3 fd'z ratio of 1.

また、S+、 A#についCは、それぞれSiが9〜1
7)皇子%、八ρが7−15原子%とする必要がある。
In addition, for S+ and A#, C has Si of 9 to 1, respectively.
7) Prince %, 8 rho needs to be 7-15 atomic %.

ごれは、Si及びAρの含<1量がこれら範囲を外れる
と、例えば保磁力が犬となり磁気ヘットの二17材料と
し′(は使用し+1なく&すると同時に、飽和磁束密度
の低(・−や透磁率の低トが見られるごとによる。これ
に対し、1−述の範囲とすれば、低保磁力化、西飽和磁
束密度化、商店磁率化が達−せられ、史に零(6歪化が
得られる。
If the content of Si and Aρ is outside these ranges, for example, the coercive force will be low, and the magnetic head's 217 material will not be used. At the same time, the saturation magnetic flux density will be low ( In contrast, if the range described in 1-1 is used, a reduction in coercive force, an increase in west saturation magnetic flux density, and a decrease in magnetic permeability will be achieved, reaching zero in history ( 6 distortion is obtained.

〔実施例〕〔Example〕

本発明による軟磁性薄膜の製造方法としては、いわゆる
気相薄映生成技術によるのが良い。(ljl故2(ら、
例えば−・般の溶解による方法でば均一に多臣の窒素を
導入することは難しい。“1なわら、通′帛窒素は合金
l容融中にスラグとしC浮上し不純物としこ合金と分離
され°(しまうのである。
As a method for manufacturing the soft magnetic thin film according to the present invention, a so-called vapor phase thin film generation technique is preferably used. (ljl because 2(ra,
For example, it is difficult to uniformly introduce a large amount of nitrogen using the conventional dissolution method. However, during the melting of the alloy, the circulating nitrogen becomes slag and C floats to the surface, becoming an impurity and being separated from the alloy.

そごで、本発明による転磁t11薄験は、蒸着法やイオ
ンインプランテーション法等により作製−4るのが好ま
しい。蒸着の手法とり、 (i;+、例えはフラッシュ
蒸着、ガス中興着lJ、−、イオンブレーティング、ス
パッタリング、クラスター・イオンじ一方法等が挙げら
れ、また蒸着とイオンインプランテーションを同時に行
ってもよい。また、磁性8膜に窒素Nを導入゛4゛る方
法とり、 ’Cは、(1,1窒素ガスを含む雰囲気中ご
蒸着等を行い、この窒素ガスの濃度によっ゛(得られる
磁411薄映中の窒素Nの含有量を調節して導入する方
法。
Therefore, it is preferable that the magnetization t11 thin test according to the present invention be produced by a vapor deposition method, an ion implantation method, or the like. Vapor deposition methods include (i; +, for example, flash vapor deposition, gas deposition lJ, -, ion blasting, sputtering, cluster ion single method, etc.), and even if vapor deposition and ion implantation are performed at the same time. In addition, a method of introducing nitrogen N into the magnetic 8 film is used, and C is deposited in an atmosphere containing 1,1 nitrogen gas, and depending on the concentration of this nitrogen gas, A method of adjusting and introducing nitrogen N content in magnetic 411 thin film.

(2)  窒素Nと各成分のうりの少なくとも1棟の元
素との化合物と、残りの成分の合金とを蒸発源とし゛ζ
使用し、得られる磁性薄膜中に窒素Nを導入する方法、 等が挙げられる。さらに、磁iIF薄腺を構成”4るP
e、 Co、 St等の各成分ノl二素の組成を調節す
る方法とし”(は、 fll  Fe、 Co、 Stや他の添加剤、置換金
属等を所定の割合となるように秤Mし、これらをあらか
じめ例えば商用波溶解炉等で溶解して合金インゴットを
形成しておき、この合金インゴットを蒸発源として使j
1目−る方法、 (2)  各成分の単独元素の蒸発源を川、低し、ごれ
ら蒸発源の数で組成を制御する方法、 (3)各成分の単独元素の蒸発源を用慈し、これら蒸発
源に加える出力(印加電圧)を制御し′ζ蒸発スピード
を二コントロールし組成をli制御する方法、 (4)  合金を蒸発障としC蒸着しながら他の元素を
打ち込む方法、 等が挙げられる。
(2) A compound of nitrogen N and at least one element of each component, and an alloy of the remaining components as an evaporation source.
A method of introducing nitrogen N into the obtained magnetic thin film using the above method can be mentioned. In addition, the ``4 P'' that constitutes the magnetic iIF thin gland
A method of adjusting the composition of each component such as Fe, Co, St, etc. , these are melted in advance in a commercial wave melting furnace, etc. to form an alloy ingot, and this alloy ingot is used as an evaporation source.
(2) A method in which the evaporation source of a single element in each component is lowered and the composition is controlled by the number of evaporation sources; (3) A method in which the evaporation source of a single element in each component is used. (4) A method of implanting other elements while evaporating C while using an alloy as an evaporation barrier; etc.

実施例1 電解鉄、電解コバルト、金属シリコン及びアルミニウム
を原料として用い、これら各原料を秤量し゛(分取した
後、商用波溶解炉を用いて真空中で熔解し、鋳型に流し
込んで成形して直径50m鑞、jνさ1u+の電極用タ
ーゲットを作製した。
Example 1 Electrolytic iron, electrolytic cobalt, metallic silicon, and aluminum were used as raw materials. These raw materials were weighed (separated, then melted in a vacuum using a commercial wave melting furnace, poured into a mold, and formed. An electrode target with a diameter of 50 m and a diameter of 1 u+ was prepared.

十記ターゲットを用い、1・記のスパッタ条件に従っ゛
(マグネトロン型スパッタリング装置によるスパッタリ
ングを行った。
Sputtering was carried out using a magnetron type sputtering device using the following targets and following the sputtering conditions described in 1.

スパッタ条件 RF ノマワ −                 
10(IWツタ−ット・基扱間距1ii11  3fl
朧鳳X、扱温度        〜20℃(水冷)到達
真空度       3 X ](]″l″Tor+ガ
スj[−力        8 X Hl−jl’or
r腺   厚            約 2.E)〜
3.1 μm−1−記スバッタ条4Qに従い、不活+I
Iガスとしく^rガスを用い、ごの計ガスにN2を混入
してスパッタリングを行った。ここで、N2の混入量を
分IEで制御し、ごのN2の割合を変えながらスパッタ
リングを行い、結晶化ガラスLL板1”にBe−Co−
5L糸合金s腺を形成した。得られたFe−Go−、S
L系合金薄股を500℃、650℃で人々1時間熱処理
(アニール)した。
Sputtering conditions RF Nomawa -
10 (IW stud/basic handling distance 1ii11 3fl
Oboro X, handling temperature ~20℃ (water cooling) ultimate vacuum 3
r gland thickness approx. 2. E)~
3.1 μm-1- Inert + I according to Subatta Article 4Q
Sputtering was performed using I gas and R gas, with N2 mixed in with the other gas. Here, sputtering was performed while controlling the amount of N2 mixed in with minute IE and changing the ratio of N2, and the Be-Co-
A 5L thread alloy s-gland was formed. The obtained Fe-Go-,S
The L-based alloy thin strips were heat treated (annealed) at 500°C and 650°C for 1 hour.

実施例1に1几)で、そのN2ガスの分用を変化させた
場合の得られた膜組成と、保磁ノ月ICと5MIIZに
おけるI、!8磁率メi+MH□と、+h+4 ft!
It l’lを測定した結果を第2図面に示′]。尚、
各組成の測定は、Nに関してはインナートガスディソニ
ージョン(熱伝導度)法によってその測定を行ったもの
であり、他につい゛(は、RPMA (Electri
c Probe Micro Analsis)によっ
た。また、ここで耐蝕性の測定は、測定試料を1規定の
NaCI溶液中に9時間浸漬し、表向の発錆状態を1−
1視観察したもので、◎印は鏡面が保たれたもの、0印
は表面に曇りがη−したもの、Δ印は部分的に薄い錆が
発ヰしたものを丞ず。
Example 1 shows the film compositions obtained when the N2 gas distribution is changed, and the I,! 8 Magnetic Mei+MH□ and +h+4 ft!
The results of measuring It l'l are shown in the second drawing']. still,
Regarding the measurement of each composition, N was measured using the inner gas dissonance (thermal conductivity) method;
c Probe Micro Analsis). In addition, to measure the corrosion resistance, the measurement sample was immersed in a 1N NaCI solution for 9 hours, and the surface rust state was evaluated at 1-N.
1-visual observation: ◎ indicates that the mirror surface was maintained, 0 indicates that the surface is cloudy (η-), and Δ indicates that thin rust has appeared partially.

尚、比較のために同図向の表中にNを含有させないもの
につい”ζもその測定結果を示した。
Incidentally, for comparison, the measurement results for "ζ" are also shown in the table of the same figure for those not containing N.

これら測定結果から明らかなように、本発明によるN含
有の軟磁性薄膜はNを含有しない軟磁性薄膜に比して保
磁ノ月ICをさほど而めることなく、透磁率の同士と耐
蝕性の向−Lがはかられている。
As is clear from these measurement results, the N-containing soft magnetic thin film according to the present invention does not significantly impair the coercive IC compared to the soft magnetic thin film that does not contain N, and has a similar magnetic permeability and corrosion resistance. The direction -L is measured.

以り述べたように、本発明による軟磁性8欣においては
、その成分として窒素Nを含有しているごとにより、+
11]透磁率及び耐蝕性の向−ヒがはかられる4)ので
あるが史に高硬度が達成されて耐摩耗性の向−■−がは
かられるものであり、このとき飽和磁束密度や保磁力等
の磁気特性の劣化も見られない。そしC特に、窒素Nを
含有するごとにまり比抵抗が増加し、商用波領域での渦
電流出火が小さくなることがら透磁率の周波数特1ノ1
が向lして10MIIz以−1,の1111周波数領域
ご使用される磁気へ・ノド等に対して極めて有用となる
。
As described above, the soft magnetic 8-magnetic material according to the present invention has a +
11] Improved magnetic permeability and corrosion resistance 4) However, in history, high hardness was achieved and wear resistance improved, and at this time saturation magnetic flux density and No deterioration of magnetic properties such as coercive force is observed. In particular, as more nitrogen is added, the specific resistance increases, and the eddy current outbreak in the commercial wave region becomes smaller.
It is extremely useful for magnetic fields and throats used in the 1111 frequency range of 10 MIIz-1.

而、この磁性WJIIQ中における窒素Nの果たす役割
については、その詳細は不明であるが、硬度が著しく向
りするごとからHeの窒化や窒化ケイ素等の高硬度粒子
の生成等も予想される。
Although the details of the role played by nitrogen N in this magnetic WJIIQ are unknown, as the hardness increases significantly, it is expected that nitridation of He and the formation of high hardness particles such as silicon nitride are likely to occur.

また、上述の本発明による軟磁性薄膜において、史に耐
蝕性や耐摩耗性そのほか各柿特竹を改善するために各種
元素を添加剤とし゛(加えてもよい。
Furthermore, in the soft magnetic thin film according to the present invention described above, various elements have been used as additives (or may be added) in order to improve corrosion resistance, abrasion resistance, and other properties of each persimmon tokutoku.

この添加剤として使用される元素としてば、Tl。An example of an element used as this additive is Tl.

Zr、 Hf等のrVa族几素元素、 Nb、 Ta等
のVa族ye。
rVa group phosphorus elements such as Zr and Hf; Va group ye such as Nb and Ta;

素、Cr、 Mo、 W等のVla族ye、素、Mn等
の■a族几元素さらに白金族元素とし゛(第5周期の白
金族元素、すなわちRu、 Rh、 Rd、第6周期の
白金族)r、素、すなわちOs、 lr、 PL等を挙
げることができるものであり、これら添加剤の1種また
は2種以上を組み合わせて、上記磁性薄膜に対し70〜
10市殴%の範囲で添加し得る。
Vla group elements such as element, Cr, Mo, and W; A group elements such as element and Mn; )r, elemental, i.e., Os, lr, PL, etc., and one or more of these additives may be used in combination to add 70 to 70 to the above magnetic thin film.
It can be added within the range of 10%.

また、成る場合は、窒ANと共に酸素を含有さ・口るこ
ともできる。
In addition, if it is made of nitrogen, it can also contain oxygen together with nitrogen.

〔発明の効果〕〔Effect of the invention〕

上述し、たように本発明による軟磁性薄膜によれば、飽
和磁束密度の低ドや、保磁力を高めることなく、IIl
+透磁率を有し、耐蝕性にすぐれ、高硬度の耐摩耗性に
すぐれ、更にアモルファス磁性薄膜におけるような熱的
に不安定性のない耐熱性にすぐれた軟磁性薄膜を得るこ
とができるので、例えば重密度記録用のs模磁気ヘッド
の清除磁気コアとして用いて、その利益は極めて大であ
る。
As mentioned above, according to the soft magnetic thin film according to the present invention, the saturation magnetic flux density is low and the coercive force is not increased.
It is possible to obtain a soft magnetic thin film that has high magnetic permeability, excellent corrosion resistance, high hardness and wear resistance, and also has excellent heat resistance without thermal instability like an amorphous magnetic thin film. For example, it can be used as a cleaning magnetic core of an s-type magnetic head for heavy density recording, and its benefits are extremely large.

【図面の簡単な説明】[Brief explanation of drawings]

図は軟磁性薄膜の組成と各特性の測定結果を示す表図で
ある。 ず−続ネiIi正書: 昭和61年 4月 ム目 特許庁に官  宇 賀 道 部   殿昭和60年 特
 許 願 第230466号3、補正をする者 事件との関係   特許出願人 住 所 東京部品用区北品用6丁目7番35号名称(2
1f+)ソニー株式会社 代表取締役 大 賀 典 雄 4、代理人 6、補正により増加する発明の数 (11明細書中、特許請求の範囲を別紙のように補正す
る。 (2)同、第6頁1行及び2行に夫々rlO人」とある
を「100人」と訂正する。 (3)同、第11頁1行r 100WJをr 250W
Jと訂正する。 とあるをr Fe −Co−5t  AA系」と訂正す
る。 以上 特許請求の範囲 Goが 0.5〜15原子%、siが9〜17原子%、
 八βが7〜15原子%、Nが0.01〜10原子%、
残部Feの組成を有することを特徴とする軟磁性薄膜。
The figure is a table showing the composition of the soft magnetic thin film and the measurement results of each characteristic. Z-Zoku IIi original text: April 1986 Officially appointed to the Japan Patent Office Tomo Uga Michibu 1985 Patent Application No. 230466 3, Relationship with the case of the person making the amendment Patent applicant address Tokyo Parts Ward Kitashinyo 6-7-35 Name (2
1f+) Sony Corporation Representative Director Norio Ohga 4, Agent 6, Number of inventions increased by amendment (11 specifications, the scope of claims will be amended as in the attached sheet. (2) Same, page 6 In the 1st and 2nd lines, the words "rlO people" are corrected to "100 people." (3) Same, page 11, line 1 r 100WJ is r 250W
Correct it with J. Correct the statement to read "rFe-Co-5t AA system". In the above claims, Go is 0.5 to 15 at%, Si is 9 to 17 at%,
8β is 7 to 15 at%, N is 0.01 to 10 at%,
A soft magnetic thin film characterized by having a composition with the balance being Fe.

Claims (1)

【特許請求の範囲】[Claims] Coが5〜15原子%、Siが9〜17原子%、Alが
7〜15原子%、Nが0.01〜10原子%、残部Fe
の組成を有することを特徴とする軟磁性薄膜。
Co is 5 to 15 at%, Si is 9 to 17 at%, Al is 7 to 15 at%, N is 0.01 to 10 at%, balance is Fe.
A soft magnetic thin film characterized by having a composition.
JP60230466A 1985-10-16 1985-10-16 Soft magnetic thin film Expired - Lifetime JPH0746654B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60230466A JPH0746654B2 (en) 1985-10-16 1985-10-16 Soft magnetic thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60230466A JPH0746654B2 (en) 1985-10-16 1985-10-16 Soft magnetic thin film

Publications (2)

Publication Number Publication Date
JPS6289310A true JPS6289310A (en) 1987-04-23
JPH0746654B2 JPH0746654B2 (en) 1995-05-17

Family

ID=16908273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60230466A Expired - Lifetime JPH0746654B2 (en) 1985-10-16 1985-10-16 Soft magnetic thin film

Country Status (1)

Country Link
JP (1) JPH0746654B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8114225B2 (en) * 2005-10-27 2012-02-14 General Electric Company Soft magnetic materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5447817A (en) * 1977-09-26 1979-04-14 Hitachi Metals Ltd High permeability alloy
JPS5827941A (en) * 1981-08-11 1983-02-18 Hitachi Ltd Method for manufacturing amorphous thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5447817A (en) * 1977-09-26 1979-04-14 Hitachi Metals Ltd High permeability alloy
JPS5827941A (en) * 1981-08-11 1983-02-18 Hitachi Ltd Method for manufacturing amorphous thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8114225B2 (en) * 2005-10-27 2012-02-14 General Electric Company Soft magnetic materials

Also Published As

Publication number Publication date
JPH0746654B2 (en) 1995-05-17

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