JPS6310619U - - Google Patents

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Publication number
JPS6310619U
JPS6310619U JP10300486U JP10300486U JPS6310619U JP S6310619 U JPS6310619 U JP S6310619U JP 10300486 U JP10300486 U JP 10300486U JP 10300486 U JP10300486 U JP 10300486U JP S6310619 U JPS6310619 U JP S6310619U
Authority
JP
Japan
Prior art keywords
semiconductor device
active elements
microwave
rows
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10300486U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10300486U priority Critical patent/JPS6310619U/ja
Publication of JPS6310619U publication Critical patent/JPS6310619U/ja
Pending legal-status Critical Current

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  • Microwave Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例のMMICパターン
図、第2図は、従来の半導体装置のMMICパタ
ーン図である。 図において、1……能動素子、2……化合物基
板、3……入力回路、4……出力回路、5……入
力パツド、6……出力パツド。
FIG. 1 is an MMIC pattern diagram of an embodiment of the present invention, and FIG. 2 is an MMIC pattern diagram of a conventional semiconductor device. In the figure, 1... active element, 2... compound substrate, 3... input circuit, 4... output circuit, 5... input pad, 6... output pad.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半絶縁性化合物基板の主表面上に、複数の能動
素子を有する分布型増幅器が形成されるマイクロ
波モノリシツク集積回路において、前記能動素子
が複数列に区分して配列され、マイクロ波信号の
伝送経路が折り曲げられる形で配置されることを
特徴とする半導体装置。
In a microwave monolithic integrated circuit in which a distributed amplifier having a plurality of active elements is formed on the main surface of a semi-insulating compound substrate, the active elements are arranged in a plurality of rows to form a transmission path for a microwave signal. A semiconductor device characterized in that the semiconductor device is arranged in a bendable manner.
JP10300486U 1986-07-03 1986-07-03 Pending JPS6310619U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10300486U JPS6310619U (en) 1986-07-03 1986-07-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10300486U JPS6310619U (en) 1986-07-03 1986-07-03

Publications (1)

Publication Number Publication Date
JPS6310619U true JPS6310619U (en) 1988-01-23

Family

ID=30975160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10300486U Pending JPS6310619U (en) 1986-07-03 1986-07-03

Country Status (1)

Country Link
JP (1) JPS6310619U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140211A (en) * 1984-12-13 1986-06-27 Nippon Telegr & Teleph Corp <Ntt> High frequency power amplifier
JPS6140024B2 (en) * 1980-11-24 1986-09-06 Kyanon Masukiigan Corp

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140024B2 (en) * 1980-11-24 1986-09-06 Kyanon Masukiigan Corp
JPS61140211A (en) * 1984-12-13 1986-06-27 Nippon Telegr & Teleph Corp <Ntt> High frequency power amplifier

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