JPS63119210A - Amorphous magnetic film and magnetic head - Google Patents

Amorphous magnetic film and magnetic head

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Publication number
JPS63119210A
JPS63119210A JP26372186A JP26372186A JPS63119210A JP S63119210 A JPS63119210 A JP S63119210A JP 26372186 A JP26372186 A JP 26372186A JP 26372186 A JP26372186 A JP 26372186A JP S63119210 A JPS63119210 A JP S63119210A
Authority
JP
Japan
Prior art keywords
film
amorphous
magnetic
metal base
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26372186A
Other languages
Japanese (ja)
Inventor
Yoshihiro Hamakawa
濱川 佳弘
Kazuo Shiiki
椎木 一夫
Noritoshi Saitou
斉藤 法利
Moichi Otomo
茂一 大友
Takayuki Kumasaka
登行 熊坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP26372186A priority Critical patent/JPS63119210A/en
Publication of JPS63119210A publication Critical patent/JPS63119210A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To obtain an amorphous alloy film having high saturation magnetic flux density, excellent thermal stability and a magnetostriction constant of approximately zero and a magnetic head using said amorphous alloy film by forming a metallic foundation film between the Co group amorphous alloy film and a substrate. CONSTITUTION:A metallic foundation film 2 is shaped between a Co group amorphous alloy film 3 mainly comprising Co and a substrate 1. It is preferable that the metallic foundation film 2 consists of either one kind of a metal or two kinds or more of alloys of Zr, Ta, W, Nb and Mo. It is desirable that the metallic foundation film is constituted of at least one kind of the metal or two kinds or more or alloys of additional elements except Co of a Co group amorphous alloy from the point of chemical stability in the amorphous film having chemical formula CoaZrbTc (T=Zr, Ta, W, Nb, Mo...). Zr having the highest amorphous forming capacity of the Co group alloy is the most preferable among them. It is desirable that the film thickness of the metallic foundation film ranges from 30Angstrom to 500Angstrom .

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高密度磁気記録に適する磁気ヘッド磁極に用
いる磁性膜に係り、特に高飽和磁束密度高結晶化温度、
低磁歪定数の特性を有する非晶質残性膜およびそれを用
いた磁気ヘッドに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic film used in a magnetic head pole suitable for high-density magnetic recording, and particularly relates to a magnetic film having a high saturation magnetic flux density, a high crystallization temperature, and a high crystallization temperature.
The present invention relates to an amorphous residual film having a characteristic of a low magnetostriction constant and a magnetic head using the same.

〔従来の技術〕[Conventional technology]

磁気記録の高密度化、高性能化の進展は近年著しく、V
TRの分野では、記録密度向上のために高保磁力テープ
が使用されるようになり、これに信号を十分に記録再生
するために高飽和磁束密度で高性能の磁性材料を用いた
磁気ヘッドの要求が高まっている。また、計算機ディス
ク用などに用いられる薄膜ヘッドにおいては、記録の高
密度化に伴って、分解能を向上するために磁極を薄膜化
する必要があり、薄い磁極先端では磁気飽和が起こりや
すく、なるために高飽和磁束密度の磁性膜を用いた薄膜
磁気ヘッドが必要となっている。さらに近年研究が盛ん
になりつつある垂直磁気記録用単磁極型ヘッドにおいて
も記録密度向上のためには主磁極厚みを極端に薄くする
必要があるため、上述と同様に磁極先端で磁気飽和が起
こりやすく、これを解決するために高飽和磁束密度で高
性能の磁性膜を用いた垂直磁気記録用単磁極型ヘッドが
必要となっている。
In recent years, there has been remarkable progress in increasing the density and performance of magnetic recording.
In the field of TR, high coercive force tapes are being used to improve recording density, and in order to sufficiently record and reproduce signals, there is a need for magnetic heads that use high-performance magnetic materials with high saturation magnetic flux density. is increasing. In addition, in thin-film heads used for computer disks, as recording density increases, magnetic poles must be made thinner to improve resolution, and thin magnetic pole tips tend to cause magnetic saturation. Therefore, a thin film magnetic head using a magnetic film with high saturation magnetic flux density is required. Furthermore, even in single-pole heads for perpendicular magnetic recording, which have been actively researched in recent years, it is necessary to make the main pole extremely thin in order to improve the recording density, so magnetic saturation occurs at the tip of the magnetic pole as described above. To solve this problem, a single-pole head for perpendicular magnetic recording using a high-performance magnetic film with high saturation magnetic flux density is required.

これらの磁気ヘッド用の磁性膜として、従来主にN i
 −F e系合金膜(パーマロイ膜)が用いられてきた
が、近年高飽和磁束密度で高性能の磁性膜として非晶質
合金スパッタ膜が開発されつつある。この中でも特にZ
rから成る非晶質合金はガラス化元素がB、Si、○、
Pなどのメタロイド元素からなる非晶質合金に比較して
、耐熱性、耐食性に優れており、磁気ヘッド用磁性膜と
して優れた特性を有している。Zr系非晶質合金は具体
的にはMaT+、 Z r Cの組成式で表わされる。
Conventionally, the magnetic film for these magnetic heads has mainly been Ni
-Fe-based alloy films (permalloy films) have been used, but in recent years, amorphous alloy sputtered films have been developed as high-performance magnetic films with high saturation magnetic flux density. Among these, especially Z
In the amorphous alloy consisting of r, the vitrification elements are B, Si, ○,
Compared to amorphous alloys made of metalloid elements such as P, it has excellent heat resistance and corrosion resistance, and has excellent properties as a magnetic film for magnetic heads. Specifically, the Zr-based amorphous alloy is represented by a composition formula of MaT+, ZrC.

ここでMは磁気モーメントを有するCo、Fe、Niな
との少くとも一種であり、TはMおよびZr以外の遷移
金属元素である。このようなガラス化元素が主にZr以
外の遷移金属元素である。このようなガラス化元素が主
にZrから成る非晶質合金については特開昭55−13
8049号明細書ならびに特開昭56−84439号明
細書等に述べられている。
Here, M is at least one of Co, Fe, and Ni having a magnetic moment, and T is a transition metal element other than M and Zr. Such vitrification elements are mainly transition metal elements other than Zr. Regarding such an amorphous alloy whose vitrifying element is mainly Zr, Japanese Patent Application Laid-Open No. 55-13
It is described in the specification of No. 8049 and the specification of Japanese Patent Application Laid-open No. 84439/1983.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

これらのZr系非晶質合金の中でもMがCoから成るC
 o −Z r系非晶質合金は、飽和磁束密度が高く、
優れた磁性材料である。しかし、この非晶質合金の磁歪
定数は、2〜4X10 Bと比較的大きな値を示すため
、添加元素Tとして、非晶質合金の磁歪定数に負の寄与
を与えるV、Nb。
Among these Zr-based amorphous alloys, C in which M is Co
The o-Zr amorphous alloy has a high saturation magnetic flux density,
It is an excellent magnetic material. However, since the magnetostriction constant of this amorphous alloy exhibits a relatively large value of 2 to 4×10 B, the additive elements T include V and Nb, which make a negative contribution to the magnetostriction constant of the amorphous alloy.

T a + Cr t M o + Wなどの元素を用
いることにより磁歪定数がほぼ零の非晶質合金が得られ
る。
By using elements such as T a + Cr t M o + W, an amorphous alloy with a magnetostriction constant of approximately zero can be obtained.

ところが、これらの元素は、Zrに比べて非晶質形成能
が小さいため、Co −Z r系非晶質合金のZrと置
換していくと、結晶化温度が下がり、熱的安定性が低下
する。また、結晶化非晶質化境界が低Co濃度に移動し
、非晶質状態で得られる最大の飽和磁束密度が減少する
という問題点があった。
However, these elements have a lower ability to form an amorphous state than Zr, so when they are substituted for Zr in a Co-Zr amorphous alloy, the crystallization temperature decreases and the thermal stability decreases. do. Furthermore, there is a problem that the crystallization-amorphization boundary moves to a low Co concentration, and the maximum saturation magnetic flux density obtained in the amorphous state decreases.

本発明の目的は、かかる問題を解決し、高い飽和磁束密
度を有し、熱的安定性にすぐれ、磁歪定数がほぼ零の非
晶質合金膜およびそれを用いた磁気ヘッドを得ることに
ある。
An object of the present invention is to solve such problems and to obtain an amorphous alloy film having a high saturation magnetic flux density, excellent thermal stability, and a magnetostriction constant of almost zero, and a magnetic head using the same. .

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記目的は、第1図に示すようにCo系非晶質合金膜3
と基板1との間に金属下地膜2を設けることにより達成
される。金属下地膜2としては、Zr、Ta、W、Nb
、Moのいずれか一種の単金属、または二種以上の合金
からなることが望ましい。また、化学式がCoaZ r
bTc  (T= Z r tTa、W、Nb、Mo・
・・)で与えられる非晶質膜では、化学安定性の点から
、金属下地膜は、C。
The above purpose is as shown in FIG.
This is achieved by providing a metal base film 2 between and the substrate 1. The metal base film 2 includes Zr, Ta, W, and Nb.
, Mo, or an alloy of two or more thereof. Also, the chemical formula is CoaZ r
bTc (T=Z r tTa, W, Nb, Mo・
), the metal base film is C from the viewpoint of chemical stability.

系非晶質合金のCo以外の添加元素のうち少なくとも一
種の単金属、または二種以上の合金から構成されている
ことが望ましい。その中で最も望ましいのは、Co系合
金の非晶質形成能が最も高いZrである。
It is desirable that the amorphous alloy be composed of at least one single metal or an alloy of two or more of the additive elements other than Co. The most desirable among them is Zr, which has the highest ability to form an amorphous state in a Co-based alloy.

金属下地膜2の膜厚は、30Å以上であれば良い。しか
し金属下地膜2は非磁性であるため、金属下地膜の膜厚
を厚くすると、磁性膜3の総磁束密度は小さくなる。そ
こで金属下地膜の膜厚は、30Å以上、500Å以下が
望ましい。
The thickness of the metal base film 2 may be 30 Å or more. However, since the metal base film 2 is non-magnetic, increasing the thickness of the metal base film reduces the total magnetic flux density of the magnetic film 3. Therefore, the thickness of the metal base film is preferably 30 Å or more and 500 Å or less.

〔作用〕[Effect]

ここで金属下地膜は、その上に形成する磁性膜の非晶質
化を、促進する。すなわち、非晶膜形成時に、金属下地
膜を構成する金属原子が非晶質膜中を拡散し合金化して
、基板との界面近傍に、結晶化温度の高い層を形成する
。この新しく形成された層が、非晶質膜の結晶化を抑制
しているものと思われる。したがって、金属下地膜とし
ては、Co金属を非晶質化し、結晶化温度の比較的高い
合金を形成できるような元素が望ましい。以上のことか
ら、Co系非晶質合金の場合は、金属下地膜を設けるこ
とで、非晶質領域が高Co濃度側まで拡がり、非晶質状
態で得られる最大の飽和磁束密度が増大する。また、こ
の飽和磁束密度の高い非晶質残性膜を磁気コアに用いた
磁気ヘッドは。
Here, the metal base film promotes amorphization of the magnetic film formed thereon. That is, during formation of the amorphous film, metal atoms constituting the metal base film diffuse through the amorphous film and form an alloy, forming a layer with a high crystallization temperature near the interface with the substrate. It is thought that this newly formed layer suppresses crystallization of the amorphous film. Therefore, as the metal base film, it is desirable to use an element that can make the Co metal amorphous and form an alloy with a relatively high crystallization temperature. From the above, in the case of Co-based amorphous alloys, by providing a metal base film, the amorphous region expands to the high Co concentration side, increasing the maximum saturation magnetic flux density obtained in the amorphous state. . In addition, magnetic heads use this amorphous residual film with high saturation magnetic flux density in the magnetic core.

磁気コア先端に大きな磁場を発生できるため、記録特性
が優れている。
It has excellent recording characteristics because it can generate a large magnetic field at the tip of the magnetic core.

〔実施例〕〔Example〕

以下、本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

実施例1 第2図に、金属下地膜を設けずに厚さ1μmのCo −
T a −Z r系合金膜を形成した場合の特性図を示
す。Co−Ta−Zr系合金膜は高周波2極スパツタ装
置によって37059 (米国コーニング社商品名)ガ
ラス基板上に作製した。Co−T a −Z r系合金
膜が非晶質状態であるか否かは、X線回折パターン、比
抵抗、保磁力で確認した。
Example 1 In Fig. 2, a 1 μm thick Co −
A characteristic diagram when a Ta-Zr alloy film is formed is shown. A Co--Ta--Zr alloy film was produced on a 37059 (trade name, manufactured by Corning, USA) glass substrate using a high-frequency two-pole sputtering device. Whether or not the Co-Ta-Zr alloy film was in an amorphous state was confirmed by the X-ray diffraction pattern, resistivity, and coercive force.

すなわち、X線回折パターンにピークがです、比抵抗が
0.3μΩm以上、保磁力が10e 以下の時、そのC
o T a Z r系合金膜は非晶質状態であるとした
。非晶質領域は、G o −T a系でCo組成が85
at%まで、Co−Zr系でCo組成が94 a、t%
までと、Zr組成が増えるにしたがって高Co濃度側に
拡っている。磁歪はほぼTaとZrの組成の比で決まっ
ており、Ta : Zr==5:3の時にOとなってい
る。飽和磁束密度Bsは、Co組成によって決まってお
り、Co組成が大きい程高い飽和磁束密度Bsが得られ
る。ヘッド材料として望ましい磁歪がOでは、非晶質状
態で得られる最大の飽和磁束密度Bsは1.47である
In other words, there is a peak in the X-ray diffraction pattern, and when the resistivity is 0.3 μΩm or more and the coercive force is 10e or less, the C
It was assumed that the o T a Z r alloy film was in an amorphous state. The amorphous region has a Go-Ta system with a Co composition of 85
up to at%, Co-Zr system with Co composition of 94 a,t%
As the Zr composition increases, the Co concentration increases. Magnetostriction is determined approximately by the composition ratio of Ta and Zr, and is O when Ta:Zr==5:3. The saturation magnetic flux density Bs is determined by the Co composition, and the larger the Co composition, the higher the saturation magnetic flux density Bs obtained. When the magnetostriction desirable for the head material is O, the maximum saturation magnetic flux density Bs obtained in an amorphous state is 1.47.

第3図には、Zrの金属下地膜を膜厚30人形成した後
、G o −T a −Z r系合金膜を膜厚1μm形
成した時の特性図を示す。磁歪、飽和磁束密度Bsの組
成依存性は、金属下地膜を設けていない場合と変わらな
いが、非晶質領域は高Co濃度側まで拡がり、磁歪がO
で非晶質状態で得られる最大の飽和磁束密度Bsは、1
.6Tとなった。
FIG. 3 shows a characteristic diagram when a Zr metal base film was formed to a thickness of 30, and then a Go-Ta-Zr alloy film was formed to a thickness of 1 μm. The compositional dependence of magnetostriction and saturation magnetic flux density Bs is the same as when no metal underlayer is provided, but the amorphous region extends to the high Co concentration side, and the magnetostriction becomes O
The maximum saturation magnetic flux density Bs obtained in the amorphous state is 1
.. It became 6T.

これは、金属下地膜を設けていない場合よりも0.2T
大きくなっている。また、同一組成で結晶化温度を比較
した場合、金属下地膜を設けた時の方が20℃高くなり
、熱安定性に優れていた。
This is 0.2T lower than when no metal base film is provided.
It's getting bigger. Furthermore, when comparing the crystallization temperature with the same composition, the crystallization temperature was 20° C. higher when the metal base film was provided, indicating excellent thermal stability.

第4図に、磁歪が0のG o −T a −Z r系合
金膜において非晶質状態で得られる最大の飽和磁束密度
(以下最大飽和磁束密度と称す)と、金属下地膜の膜厚
との関係を示している。金属下地膜はZrである最大飽
和磁束密度は、金属下地膜の膜厚が厚くなると大きくな
るが、膜厚が30Å以上では飽和する。
Figure 4 shows the maximum saturation magnetic flux density (hereinafter referred to as maximum saturation magnetic flux density) obtained in an amorphous state in a Go-Ta-Zr alloy film with magnetostriction of 0 and the film thickness of the metal base film. It shows the relationship between The maximum saturation magnetic flux density when the metal base film is Zr increases as the thickness of the metal base film increases, but becomes saturated when the film thickness is 30 Å or more.

実施例2 第1表に、金属下地膜とCo系合金膜の組み合せを種々
変えた場合に、Co系合金膜の磁歪が零の時、非晶質状
態で得られる最大の飽和磁束密度と、金属下地膜を設け
ることによる結晶化温度の増加分を示している。いずれ
の膜も高周波2極スパツタ装置によって37059 (
米国コーニング社商品名)ガラス基板上に作成した。金
属下地膜の膜厚は30人、Co系合金膜の膜厚は1μm
とした。いずれの組み合せでも、金属下地膜を設けるこ
とによって、非晶質状態で得られる最大の飽和磁束密度
は増加し、結晶化温度も高くなり熱安定性が増している
。また、金属下地膜がCo系合金膜のCo以外の添加元
素の少くとも1つと一致する方が、金属下地膜を設ける
ことによる飽和磁束密度、結晶化温度の増加分が大きい
。なかでも、Zrの金属下地膜の時に、最も効果が大き
い。
Example 2 Table 1 shows the maximum saturation magnetic flux density obtained in the amorphous state when the magnetostriction of the Co-based alloy film is zero, when the combinations of the metal base film and the Co-based alloy film are changed, and It shows the increase in crystallization temperature due to the provision of a metal base film. Both films were prepared using a high-frequency bipolar sputtering device using 37059 (
Made on a glass substrate (trade name of Corning, Inc., USA). The thickness of the metal base film is 30 people, and the thickness of the Co-based alloy film is 1 μm.
And so. In either combination, by providing a metal base film, the maximum saturation magnetic flux density obtained in an amorphous state increases, the crystallization temperature also increases, and thermal stability increases. Further, when the metal base film matches at least one of the additive elements other than Co of the Co-based alloy film, the increase in saturation magnetic flux density and crystallization temperature due to the provision of the metal base film is greater. Among these, the effect is greatest when using a Zr metal base film.

第1表 実施例3 次に、金属下地膜として膜厚が30人のZrを用い、C
o系合金磁性膜として飽和磁束密度Bs=1.5T の
Cox2Ta5Zrs合金膜を用いた非晶質残性膜を磁
極とする第5図に示す如き断面構造を有する薄膜磁気ヘ
ッドを薄膜形成加工技術によって作製した。この薄膜ヘ
ッドは、Af1205゜T i C,A Q208ある
いはZrO2などからなる非磁性基板11、金属下地膜
を設けた非晶質残性膜ノ下部磁極12、A Q xo8
+ S i C2などからなるギャップ層14、Cu、
AΩなどからなる導体コイル16、ポリイミド系樹脂、
5iOzなどからなる絶縁層15、金属下地膜を設けた
非晶質残性膜からなる上部磁極13によって構成されて
いる。
Table 1 Example 3 Next, Zr with a film thickness of 30 mm was used as the metal base film, and C
A thin-film magnetic head having a cross-sectional structure as shown in FIG. 5, which uses a Cox2Ta5Zrs alloy film with a saturation magnetic flux density Bs = 1.5T as the o-based alloy magnetic film and has an amorphous residual film as a magnetic pole, as shown in FIG. Created. This thin film head consists of a non-magnetic substrate 11 made of Af1205°T i C, A Q208 or ZrO2, a lower magnetic pole 12 of an amorphous residual film provided with a metal base film, and A Q xo8.
+ Gap layer 14 made of S i C2 etc., Cu,
A conductor coil 16 made of AΩ etc., polyimide resin,
It is composed of an insulating layer 15 made of 5iOz or the like, and an upper magnetic pole 13 made of an amorphous residual film provided with a metal base film.

この第5図に示す構造の薄膜磁気ヘッドと、金属下地膜
のない磁極をもつ薄膜磁気ヘッドとを作製して、再生出
力を比べたところ、金属下地膜の有る本発明の薄膜磁気
ヘッドの再生出方は、金属下地膜が無い場合に比べて、
約10倍大きがった。
A thin film magnetic head having the structure shown in FIG. 5 and a thin film magnetic head having a magnetic pole without a metal underlayer were fabricated, and the reproduction output was compared. Compared to the case where there is no metal base film,
It was about 10 times bigger.

このことは、Co −T a −Z r系合金膜の飽和
磁束密度が1゜5Tの場合、金属下地膜が有る膜では、
非晶質状態で軟磁気特性が優れているのに対し、金属下
地膜が無い膜では、結晶質状態で軟磁気特性が極めて悪
いためである。
This means that when the saturation magnetic flux density of a Co-Ta-Zr alloy film is 1°5T, in a film with a metal underlayer,
This is because the soft magnetic properties are excellent in the amorphous state, whereas the soft magnetic properties are extremely poor in the crystalline state in a film without a metal underlayer.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、高い飽和磁束密度を有し、結晶化温度
が高く熱安定性にすぐれ、磁歪定数がほぼ零の非晶質合
金膜が得られ、それを用いることで、高飽和磁束密度で
軟磁気特性の優れた磁極をもつ磁気ヘッドが得られる。
According to the present invention, an amorphous alloy film having a high saturation magnetic flux density, a high crystallization temperature, excellent thermal stability, and a magnetostriction constant of almost zero can be obtained. A magnetic head with a magnetic pole with excellent soft magnetic properties can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の金属下地膜を設けた非晶質残性膜の断
面図、第2図は、金属下地膜を設けない場合のG o 
−T a −Z r合金膜の特性図、第3図は、金属下
地膜を設けた場合のCo −T a −Z r合金膜の
特性図、第4図は、Co −T a −Z r系合金膜
において、金属下地膜の膜厚と、非晶状態で得られる最
大の飽和磁束密度との関係を示す図、第5図は、本発明
の金属下地膜を設けた非晶質残性膜を磁極に用いた薄膜
磁気ヘッドを示す断面図である。
FIG. 1 is a cross-sectional view of the amorphous residual film provided with the metal base film of the present invention, and FIG. 2 is a cross-sectional view of the amorphous residual film provided with the metal base film of the present invention.
-T a -Z r alloy film characteristic diagram, Fig. 3 is a characteristic diagram of Co - T a - Z r alloy film when a metal base film is provided, and Fig. 4 is a Co - T a - Z r alloy film. Figure 5 shows the relationship between the thickness of the metal base film and the maximum saturation magnetic flux density obtained in the amorphous state in the alloy film of the present invention. 1 is a cross-sectional view showing a thin film magnetic head using a film as a magnetic pole.

Claims (1)

【特許請求の範囲】 1、Coを主成分とするCo系非晶質合金膜において、
基板との間に金属下地膜を設けることを特徴とする非晶
質磁性膜。 2、前記金属下地膜がZr、Ta、W、Nb、Mo単金
属、または二種以上の合金からなることを特徴とする特
許請求の範囲第1項記載の非晶質磁性膜。 3、前記金属下地膜が、その上に形成する前記Co系非
晶質合金膜のCoを除く添加元素の少くとも1種からな
る金属または2種以上の合金からなることを特徴とする
特許請求の範囲第1項ないし第2項記載の非晶質磁性膜
。 4、前記金属下地膜が、Zrであることを特徴とする特
許請求の範囲第1項ないし第3項記載の非晶質磁性膜。 5、前記金属下地膜の膜厚が30Å以上500Å以下で
あることを特徴とする特許請求の範囲第1項ないし第4
項記載の非晶質磁性膜。 6、Coを主成分とするCo系非晶質合金膜において、
基板との間に金属下地膜を設けた非晶質残性膜を磁極と
して有することを特徴とする磁気ヘッド。 7、前記金属下地膜がZr、Ta、W、Nb、Moの単
金属、または二種以上の合金からなることを特徴とする
特許請求の範囲第6項記載の磁気ヘッド。
[Claims] 1. In a Co-based amorphous alloy film containing Co as a main component,
An amorphous magnetic film characterized by providing a metal base film between it and a substrate. 2. The amorphous magnetic film according to claim 1, wherein the metal base film is made of a single metal of Zr, Ta, W, Nb, Mo, or an alloy of two or more kinds. 3. A patent claim characterized in that the metal base film is made of a metal or an alloy of two or more of the additive elements other than Co of the Co-based amorphous alloy film formed thereon. The amorphous magnetic film according to the range 1 to 2. 4. The amorphous magnetic film according to any one of claims 1 to 3, wherein the metal base film is Zr. 5. Claims 1 to 4, characterized in that the metal base film has a thickness of 30 Å to 500 Å.
The amorphous magnetic film described in . 6. In a Co-based amorphous alloy film containing Co as a main component,
1. A magnetic head comprising, as a magnetic pole, an amorphous residual film provided with a metal base film between it and a substrate. 7. The magnetic head according to claim 6, wherein the metal base film is made of a single metal such as Zr, Ta, W, Nb, or Mo, or an alloy of two or more of them.
JP26372186A 1986-11-07 1986-11-07 Amorphous magnetic film and magnetic head Pending JPS63119210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26372186A JPS63119210A (en) 1986-11-07 1986-11-07 Amorphous magnetic film and magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26372186A JPS63119210A (en) 1986-11-07 1986-11-07 Amorphous magnetic film and magnetic head

Publications (1)

Publication Number Publication Date
JPS63119210A true JPS63119210A (en) 1988-05-23

Family

ID=17393385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26372186A Pending JPS63119210A (en) 1986-11-07 1986-11-07 Amorphous magnetic film and magnetic head

Country Status (1)

Country Link
JP (1) JPS63119210A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203308A (en) * 1989-12-29 1991-09-05 Nec Home Electron Ltd Thin magnetic film laminate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203308A (en) * 1989-12-29 1991-09-05 Nec Home Electron Ltd Thin magnetic film laminate

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