JPS63177404A - Laminated amorphous magnetic film and magnetic head using the same - Google Patents

Laminated amorphous magnetic film and magnetic head using the same

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Publication number
JPS63177404A
JPS63177404A JP802287A JP802287A JPS63177404A JP S63177404 A JPS63177404 A JP S63177404A JP 802287 A JP802287 A JP 802287A JP 802287 A JP802287 A JP 802287A JP S63177404 A JPS63177404 A JP S63177404A
Authority
JP
Japan
Prior art keywords
film
amorphous
magnetic
flux density
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP802287A
Other languages
Japanese (ja)
Inventor
Yoshihiro Hamakawa
濱川 佳弘
Kazuo Shiiki
椎木 一夫
Moichi Otomo
茂一 大友
Noritoshi Saitou
斉藤 法利
Takayuki Kumasaka
登行 熊坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP802287A priority Critical patent/JPS63177404A/en
Publication of JPS63177404A publication Critical patent/JPS63177404A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204Exchange coupling of amorphous multilayers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To obtain an amorphous alloy film having high saturated magnetic flux density, excellent thermal stability and approximately zero of magnetostrictive constant by setting the crystallizing temperature of a first amorphous film higher than that of a second amorphous film in a composite amorphous film which has the first amorphous film as a base film and the second amorphous film as a main magnetic film. CONSTITUTION:In a laminated amorphous film which has a first amorphous film as a base film 2 and a second amorphous film as a main magnetic film 3, the crystallizing temperature Tx1 of the film 2 is larger than that Tx2 of the film 3. The film 3 may be of an Fe amorphous film or a Co amorphous film, but the Co amorphous film causes a larger effect. The film 2 may be of a ferromagnetic film containing different element from that of a nonmagnetic film or the film 3. However, it is desired to compose the films 2, 3 of the same elements in view of the bondability of the film 2 to the film 3 and the chemical stability thereof. The thickness of the film 2 is suitably 30-500Angstrom .

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は高密度磁気記録に適する磁気ヘッド磁極に用い
る磁性膜に係シ、特に高飽和磁束密度。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magnetic film used in a magnetic head pole suitable for high-density magnetic recording, particularly a high saturation magnetic flux density.

高結晶化温度、低磁歪定数の特性を有する積層非晶質磁
性膜およびそれを用いた磁気ヘッドに関する。
The present invention relates to a laminated amorphous magnetic film having characteristics of high crystallization temperature and low magnetostriction constant, and a magnetic head using the same.

〔従来の技術〕[Conventional technology]

磁気記録の高密度化、高性能化の進展は近年著しく、V
TRの分野では、記録密度向上のために高保磁力テープ
が使用されるようになり、これに信号を十分に記録再生
するために高飽和磁束密度で高性能の磁性材料を用いた
磁気ヘッドの要求が高まっている。また、計算機ディス
ク用などに用いられる薄膜ヘッドにおいては、記録の高
密度化に伴って、分解能を向上するために磁極を薄膜化
する必要があシ、薄い磁極先端で磁気飽和が起こ9やす
く、このため高飽和磁束密度の磁性膜を用いた薄膜磁気
ヘッドが必要となっている。さらに、近年研究が盛んに
なυつつある垂直磁気記録用単磁極形ヘッドにおいても
記録密度向上のためには主磁極厚みを極端に薄くする必
要があるため、上述と同様に磁極先端で磁気飽和が起こ
りやすく、これを解決するために高飽和磁束密度で高性
能の磁性膜を用いた垂直磁気記録用単磁極型ヘッドが必
要となっている。
In recent years, there has been remarkable progress in increasing the density and performance of magnetic recording.
In the field of TR, high coercive force tapes are being used to improve recording density, and in order to sufficiently record and reproduce signals, there is a need for magnetic heads that use high-performance magnetic materials with high saturation magnetic flux density. is increasing. In addition, in thin film heads used for computer disks, as recording density increases, it is necessary to make the magnetic pole thinner to improve resolution, and magnetic saturation easily occurs at the thin magnetic pole tip. For this reason, a thin film magnetic head using a magnetic film with a high saturation magnetic flux density is required. Furthermore, even in single-pole heads for perpendicular magnetic recording, which have been actively researched in recent years, it is necessary to make the main pole extremely thin in order to improve recording density. To solve this problem, a single-pole head for perpendicular magnetic recording using a high-performance magnetic film with high saturation magnetic flux density is required.

これらの磁気ヘッド用の磁性膜として、従来主にN1−
pe系合金膜(パーマロイ膜)が用いられて来たが、近
年高飽和磁束密度で高性能の磁性膜として非晶質合金ス
バンタ膜が開発されつつある。この中でも特にガラス化
元素が主に7.rから成る非晶質合金は、ガラス化元素
がB、 S i、 Pなどのメタロイド元素からなる非
晶質合金に比較して、耐熱性、耐食性に優れておシ、磁
気ヘッド用磁性膜として優れた特性を有している。Zr
系非晶質合金は具体的にはMaTbZrの組成式で表わ
される。ここでMは磁気モーメントを有するCo、 F
e、 Niなどの少なくとも一種であシ、TはMおよび
Zr以外の遷移金属元素である。このようなガラス化元
素が主に7.rから成る非晶質合金については特開昭5
5−138049号明細書ならびに特開昭56−844
39号明細書等に述べられている。これらのZr系非晶
質合金の中でもMがCoから成るc o −z r系非
晶質合金は、飽和磁束密度が高く、優れた磁性材料であ
る。しかし、この非晶質合金の磁歪定数は、2〜4X1
0−’と比較的大きな値を示すため、添加元素Tとして
、非晶質合金の磁歪定数に負の寄与を与える、V。
Conventionally, N1- was mainly used as a magnetic film for these magnetic heads.
PE-based alloy films (permalloy films) have been used, but in recent years, amorphous alloy Svantha films have been developed as high-performance magnetic films with high saturation magnetic flux density. Among these, vitrification elements are mainly 7. Compared to amorphous alloys whose vitrification elements are metalloid elements such as B, Si, and P, amorphous alloys made of R have superior heat resistance and corrosion resistance, and are used as magnetic films for magnetic heads. It has excellent properties. Zr
Specifically, the amorphous alloy is represented by the composition formula of MaTbZr. Here M is Co with magnetic moment, F
T is at least one of e, Ni, etc., and T is a transition metal element other than M and Zr. Such vitrification elements are mainly 7. Regarding the amorphous alloy consisting of
Specification No. 5-138049 and JP-A-56-844
It is stated in the specification of No. 39 etc. Among these Zr-based amorphous alloys, the co-zr-based amorphous alloy in which M is Co has a high saturation magnetic flux density and is an excellent magnetic material. However, the magnetostriction constant of this amorphous alloy is 2~4X1
Since V exhibits a relatively large value of 0-', as an additive element T, V makes a negative contribution to the magnetostriction constant of the amorphous alloy.

Nb、Ta、Cr、Mo、Wなどの元素を用いることに
よシ磁歪定数がほぼ零の非晶質合金が得られる。ところ
が、これらの元素はtZrに比べて非晶質形成能が小さ
いため、Co−7,r系非晶質合金のZrと置換してい
くと、結晶化温度は低下し、結晶化非結晶化境界が低C
o@度に移動し、非晶質状態で得られる最大の飽和磁束
密度が減少するという問題点があった。
By using elements such as Nb, Ta, Cr, Mo, and W, an amorphous alloy with a magnetostriction constant of approximately zero can be obtained. However, these elements have a lower ability to form an amorphous state than tZr, so when they are substituted with Zr in a Co-7,r-based amorphous alloy, the crystallization temperature decreases and the crystallization becomes amorphous. Boundary is low C
There is a problem in that the maximum saturation magnetic flux density obtained in the amorphous state decreases as the magnetic flux density shifts to o@ degrees.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

本発明の目的は、かかる問題を解決し、高い飽和磁束密
度を有し、熱安定性にすぐれ、磁歪定数がほぼ零の非晶
質合金膜およびそれを用いた磁気ヘッドを得ることにあ
る。
An object of the present invention is to solve such problems and to obtain an amorphous alloy film having a high saturation magnetic flux density, excellent thermal stability, and a magnetostriction constant of approximately zero, and a magnetic head using the same.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的は、下記の構成をもつ積層非晶質磁性体膜を形
成することにより達成される。すなわち、第1図に示す
ように、基板1上の第1の非晶質膜を下地膜2とし、第
2の非晶質膜を主磁性膜3とした積層非晶質膜において
、第1の非晶質膜2の結晶化温度TXIが第2の非晶質
膜3の結晶化温度TX2よりも大きいとした。
The above object is achieved by forming a laminated amorphous magnetic film having the following configuration. That is, as shown in FIG. 1, in a laminated amorphous film in which the first amorphous film on the substrate 1 is the base film 2 and the second amorphous film is the main magnetic film 3, the first It is assumed that the crystallization temperature TXI of the second amorphous film 2 is higher than the crystallization temperature TX2 of the second amorphous film 3.

第2の非晶質膜3としては、Fe系非晶質膜、Co系非
晶質膜のどちらでもよいが、Co系非晶質膜の方が、よ
り効果が大きい。
The second amorphous film 3 may be either an Fe-based amorphous film or a Co-based amorphous film, but the Co-based amorphous film is more effective.

また、第1の非晶質膜2としては、非磁性膜、あるいは
、第2の非晶質膜3と異種の元素を含む強磁性膜でもよ
い。しかし、第1の非晶質膜3と、第2の非晶質膜3と
の密着性、化学安定性の観点から第1と第2の非晶質膜
は、同一の元素によって構成されることが望ましい。
Further, the first amorphous film 2 may be a nonmagnetic film or a ferromagnetic film containing a different element from the second amorphous film 3. However, from the viewpoint of adhesion between the first amorphous film 3 and the second amorphous film 3 and chemical stability, the first and second amorphous films are composed of the same element. This is desirable.

また、第1の非晶質膜の膜厚は、30Å以上あれば艮い
。しかし、第1の非晶質膜は、非磁性か、あるいは一般
に第2の非晶質膜よりも飽和磁束密度が小さい強磁性材
料である。したがって、第1の非晶質膜の膜厚を厚くす
ると、積層非晶質膜の総磁束密度は小さくなるので、第
1の非晶質膜の膜厚は、30人〜500人が適当である
Further, the thickness of the first amorphous film is not less than 30 Å. However, the first amorphous film is either nonmagnetic or a ferromagnetic material that generally has a lower saturation magnetic flux density than the second amorphous film. Therefore, if the thickness of the first amorphous film is increased, the total magnetic flux density of the laminated amorphous film becomes smaller, so the appropriate thickness of the first amorphous film is 30 to 500. be.

〔作用〕[Effect]

ここで、下地に設ける非晶質膜は、その上に形成する膜
の非晶質化を促進する作用をするものと考えられる。そ
れによって、下地に何も設けない場合には結晶化する膜
でも非晶質化できると考えられる。したがって、Co系
非晶質合金の場合は。
Here, it is thought that the amorphous film provided as the base acts to promote the amorphization of the film formed thereon. As a result, it is thought that even a film that would be crystallized if nothing is provided on the base can be made amorphous. Therefore, in the case of a Co-based amorphous alloy.

非晶質の下地を設けることで、非晶質領域を高Co濃度
側まで拡げることができ、非晶質状態で得られる最大の
飽和磁束密度が増大する。また、この飽和磁束密度の高
い積層非晶質磁性膜を磁気コアに用いた磁気ヘッドは、
磁気コア先端に大きな磁場を発生できるため、記録特性
が優れている。
By providing an amorphous base, the amorphous region can be expanded to the high Co concentration side, and the maximum saturation magnetic flux density obtained in the amorphous state is increased. In addition, a magnetic head that uses this laminated amorphous magnetic film with high saturation magnetic flux density in its magnetic core,
It has excellent recording characteristics because it can generate a large magnetic field at the tip of the magnetic core.

〔実施例〕〔Example〕

以下、本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

第2図に、下地膜を設けずに厚さ1μmのC0−Ta−
’l、r系非晶質膜を形成した場合のCoTa Z r
系合金膜の特性図を示す。C0TaZr系非晶質膜は高
周波2極スパツタ装置によってす7059 (米国コー
ニング社商品名)ガラス基板上に作製した。
Figure 2 shows a 1 μm thick C0-Ta-
CoTa Z r when forming 'l, r-based amorphous film
A characteristic diagram of the system alloy film is shown. A C0TaZr-based amorphous film was produced on a 7059 (trade name, Corning, Inc., USA) glass substrate using a high-frequency bipolar sputtering device.

Co−’i’a−7.r膜が非晶質状態であるか否かは
、X線回折パターン、比抵抗、保磁力で確認した。
Co-'i'a-7. Whether or not the r film was in an amorphous state was confirmed by the X-ray diffraction pattern, resistivity, and coercive force.

すなわち、X線回折パターンにピークがです、比抵抗が
0.3μΩm以上、保磁力が10e以下の時、そのC0
TaZr膜は非晶質状態であるとした。非晶質領域は、
Co−’pa系でCo組成が95at%まで、Co−2
r系でCo組成が94at%までと。
In other words, there is a peak in the X-ray diffraction pattern, and when the resistivity is 0.3μΩm or more and the coercive force is 10e or less, the C0
It was assumed that the TaZr film was in an amorphous state. The amorphous region is
Co-'pa system with Co composition up to 95 at%, Co-2
The Co composition is up to 94 at% in the r system.

Zr組成が増えるにしたがって高Co濃度側に拡ってい
る。磁歪はほぼTaとzrの組成の比で決まっておシ*
 T a : Z r ” 5 : 3の時にOとなっ
ている。飽和磁束密度Bsは、Co組成によって決まっ
ておシ、Co組成が大きい6i高い飽和磁束密度B8が
得られる。ヘッド材料として望ましい磁歪がOでは、非
晶質状態で得られる最大の飽和磁束密度B8は1.4’
l’である。
As the Zr composition increases, the Co concentration increases. Magnetostriction is determined approximately by the ratio of Ta and zr compositions*
When T a : Z r "5 : 3, it becomes O. The saturation magnetic flux density Bs is determined by the Co composition, and the higher the Co composition, the higher the saturation magnetic flux density B8 can be obtained. Magnetostriction is desirable as a head material. is O, the maximum saturation magnetic flux density B8 obtained in the amorphous state is 1.4'
It is l'.

第3図には、下地膜としてC05sTaaZr7(at
%)の非晶質合金″f:膜厚30人形成した後、eoT
aZr系非晶質甘金を膜厚せμm形成した時のco’f
a7.r系合金膜の特性図を示す。磁歪、飽和磁束密度
Bsの組成依存性は、下地非晶質膜を設けていない場合
と変わらないが、非晶質領域は高Co濃度側1で拡が9
、磁歪が0で非晶質状態で得らnる最大の飽和磁束密度
Bsは、1.6Tとなった。これは、下地膜を設けてい
ない場合よりも0.2T犬きくなっている。また同一組
成で結晶化温度を比較した場合、下地非晶質膜を設けた
時の方が20C高くなシ、熱安定性に優れていた。
In Figure 3, C05sTaaZr7 (at
%) of amorphous alloy "f: After forming a film thickness of 30, eoT
Co'f when aZr-based amorphous sweet gold is formed into a film with a thickness of μm
a7. A characteristic diagram of an r-based alloy film is shown. The composition dependence of magnetostriction and saturation magnetic flux density Bs is the same as when no underlying amorphous film is provided, but the amorphous region expands by 9 on the high Co concentration side 1.
, the maximum saturation magnetic flux density Bs obtained in an amorphous state with magnetostriction of 0 was 1.6T. This is 0.2 T stronger than when no base film is provided. Furthermore, when comparing the crystallization temperature for the same composition, the crystallization temperature was 20C higher when the base amorphous film was provided, and the thermal stability was superior.

第4図に、磁歪が0OCoTaZr系合金膜において、
非晶質状態で得られる最大の飽和磁束密度(以下最大飽
和磁束密度と称す)と、下地非晶質膜の膜厚との関係を
示している。下地非晶質膜の組成は、Co g5 Ta
s Zr7 (at%)であシ、結晶化温度は550C
%飽和磁束密度BsはITである。最大の飽和磁束密度
は、下地膜の膜厚が厚くなると大きくなるが膜厚が30
Å以上では、飽和する。
FIG. 4 shows that in a CoTaZr alloy film with magnetostriction of 0,
It shows the relationship between the maximum saturation magnetic flux density obtained in an amorphous state (hereinafter referred to as maximum saturation magnetic flux density) and the thickness of the underlying amorphous film. The composition of the underlying amorphous film is Co g5 Ta
s Zr7 (at%), crystallization temperature is 550C
The % saturation magnetic flux density Bs is IT. The maximum saturation magnetic flux density increases as the thickness of the underlying film increases;
Above Å, saturation occurs.

第5図に、磁歪が0のC0TaZr系合金膜において、
非晶質状態で得られる最大の飽和磁束密度と、下地非晶
質膜の結晶化温度Txとの関係を示す。下地非晶質膜の
膜厚は30Aである。下地非晶質膜の結晶化温度が高い
程最大飽和磁束密度は大きいが、下地非晶質膜の結晶化
温度が550C以上になると、飽和する。
FIG. 5 shows that in a C0TaZr alloy film with magnetostriction of 0,
The relationship between the maximum saturation magnetic flux density obtained in an amorphous state and the crystallization temperature Tx of the underlying amorphous film is shown. The thickness of the underlying amorphous film is 30A. The higher the crystallization temperature of the base amorphous film, the higher the maximum saturation magnetic flux density, but when the crystallization temperature of the base amorphous film becomes 550C or higher, it becomes saturated.

第1表に、第1の非晶質膜(下地膜)と第2の非晶質膜
(主磁性膜)の組み合Vせを種々変えた場合に、主磁性
膜の磁歪が零の時、非晶質状態で得られる最大の飽和磁
束密度と、下地を設けることによる結晶化温度の増加分
を示している。いずれの膜も高周波2極スパツタ装置に
よってす7059(米国コーニング社商品名)ガラス基
板上に作製した。下地膜の膜厚は30人、主磁性膜の膜
厚は1μmとした。いずれの組み合わせでも、下地膜を
設けることによって非晶質状態で得られる最大の飽和磁
束密度は増加し、結晶化温度も高くなり熱安定性が増し
ている。また下地膜と主磁性膜の構成元素が同一の方が
、下地を設けることによる飽和磁束密度、結晶化温度の
増加分が大きい。
Table 1 shows the results when the magnetostriction of the main magnetic film is zero when the combination V of the first amorphous film (base film) and the second amorphous film (main magnetic film) is varied. , shows the maximum saturation magnetic flux density obtained in the amorphous state and the increase in crystallization temperature due to the provision of an underlayer. Each film was produced on a 7059 (trade name, Corning, Inc., USA) glass substrate using a high-frequency two-pole sputtering device. The thickness of the base film was 30, and the thickness of the main magnetic film was 1 μm. In either combination, the provision of the underlayer increases the maximum saturation magnetic flux density obtained in the amorphous state, increases the crystallization temperature, and improves thermal stability. Further, when the underlying film and the main magnetic film have the same constituent elements, the increase in saturation magnetic flux density and crystallization temperature due to providing the underlying film is greater.

次に、下地非晶質膜として膜厚が30人のCo55 T
a s Zr s (a t %) 非晶5Kk用イ、
主磁性膜としてBg=1.5TのCo g2 ’f’a
 5 Zr3合金膜を用いた積層非晶質磁性膜を磁極と
する第6図に示す断面構造の薄膜磁気ヘッドを公知の薄
膜形成加工技術によって作製した。この薄膜ヘッドは、
At z Os T iC、Atz OsあるいはZ 
r 02などからなる非磁性基板1、積層非晶質磁性膜
の下部磁極4 、Atz03.5iOzなどからなるギ
ャップ層5、Cu、Ateどからなる導体コイル8、ポ
リイミド系樹脂、5iOzなどからなる絶縁層6、積層
非晶質膜からなる上部磁極7によって構成されている。
Next, Co55T with a film thickness of 30 mm was used as the underlying amorphous film.
a s Zr s (a t %) A for amorphous 5Kk,
Co g2 'f'a of Bg=1.5T as main magnetic film
5. A thin film magnetic head having the cross-sectional structure shown in FIG. 6 and having a laminated amorphous magnetic film using a Zr3 alloy film as a magnetic pole was fabricated by a known thin film forming technique. This thin film head is
Atz Os T iC, Atz Os or Z
A non-magnetic substrate 1 made of R02, etc., a lower magnetic pole 4 made of a laminated amorphous magnetic film, a gap layer 5 made of Atz03.5iOz, etc., a conductor coil 8 made of Cu, Ate, etc., an insulation made of polyimide resin, 5iOz, etc. It is composed of a layer 6 and an upper magnetic pole 7 made of a laminated amorphous film.

この第6図に示す構造の薄膜磁気ヘッドと、下地層のな
い薄膜磁気ヘッドとを作製して、再生出力を調べた。下
地膜の有る薄膜磁気ヘッドの再生出力は、下地が無い場
合に比べて、約10倍太きかった。このことは、以下の
原因によると考える。つまり、主磁性膜の飽和磁束密度
が1.5Tの場合、下地の有る主磁性膜は非晶質状態で
軟磁気特性が優れているのに対し、下地の無い主磁性膜
は結晶質状態で軟磁気特性が極めて悪いためである。
A thin film magnetic head having the structure shown in FIG. 6 and a thin film magnetic head without an underlayer were manufactured, and the reproduction output was examined. The reproduction output of the thin film magnetic head with the underlayer was about 10 times greater than that without the underlayer. This is considered to be due to the following reasons. In other words, when the saturation magnetic flux density of the main magnetic film is 1.5T, the main magnetic film with a base is in an amorphous state and has excellent soft magnetic properties, whereas the main magnetic film without a base is in a crystalline state. This is because the soft magnetic properties are extremely poor.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、高い飽和磁束密度を有し、結晶化温度
が高く熱安定性にすぐれ、磁歪定数がほぼ零の非晶質合
金膜が得られ、それを用いることで、高飽和磁束密度で
軟磁気特性の優れた磁極をもつ磁気ヘッドが得られる。
According to the present invention, an amorphous alloy film having a high saturation magnetic flux density, a high crystallization temperature, excellent thermal stability, and a magnetostriction constant of almost zero can be obtained. A magnetic head with a magnetic pole with excellent soft magnetic properties can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の積層非晶質磁性体膜の断面図1第2図
は非晶質下地膜を設けない場合のCo′razr合金膜
の特性図、第3図は非晶質下地膜を設けた場合のC0T
aZr合金膜の特性図、第4図はco’fa7.r系合
金膜において下地非晶質膜の膜厚と、非晶質状態で得ら
れる最大の飽和磁束密度との関係を示す図、第5図はC
0TaZr系合金膜において、下地非晶質膜の結晶化益
度と、非晶質状態で得られる最大の飽和磁束密度との関
係を示す図、第6図は本発明の積層非晶質磁性膜を磁極
に用いた薄膜磁気ヘッドを示す断面図である。 ’f、   r   O Z 6 図 71L橘梯基沃 第 4 図 O20dθ   6θ   3θ 非5L¥25全I)生ガ更っ1促し々4(A)第 5 
 図
Figure 1 is a cross-sectional view of the laminated amorphous magnetic film of the present invention. Figure 2 is a characteristic diagram of the Co'razr alloy film without an amorphous base film. Figure 3 is a cross-sectional view of the amorphous base film. C0T when providing
The characteristic diagram of the aZr alloy film, FIG. 4, is co'fa7. Figure 5 is a diagram showing the relationship between the thickness of the underlying amorphous film and the maximum saturation magnetic flux density obtained in the amorphous state in the r-based alloy film.
A diagram showing the relationship between the degree of crystallization of the base amorphous film and the maximum saturation magnetic flux density obtained in the amorphous state in a 0TaZr alloy film, FIG. 6 shows the laminated amorphous magnetic film of the invention. FIG. 2 is a cross-sectional view showing a thin film magnetic head using a magnetic pole as a magnetic pole. 'f, r O Z 6 Fig. 71L Tachibana Kadamoto No. 4 Fig. O20dθ 6θ 3θ Non-5L ¥25 All I) Fresh moga 1 Ursu 4 (A) No. 5
figure

Claims (1)

【特許請求の範囲】 1、第1の非晶質膜を下地膜とし、第2の非晶質膜を主
磁性膜とした複合非晶質膜において、第1の非晶質膜の
結晶化温度T_x_1が第2の非晶質膜の結晶化温度T
_x_2よりも大きいことを特徴とする積層非晶質磁性
膜。 2、前記第2の非晶質膜がCoを主成分とする膜である
ことを特徴とする特許請求の範囲第1項記載の積層非晶
質磁性膜。 3、前記第1の非晶質膜と第2の非晶質膜の主成分が、
同一の元素によつて構成されていることを特徴とする特
許請求の範囲第1項ないし第2項記載の積層非晶質磁性
膜。 4、前記第1の非晶質膜の膜厚が30Å以上500Å以
下であることを特徴とする特許請求の範囲第1項ないし
第3項記載の積層非晶質磁性膜。 5、前記第1の非晶質膜の結晶化温度が、550℃以上
であることを特徴とする特許請求の範囲第1項ないし第
4項記載の積層非晶質磁性膜。 6、第1の非晶質膜を下地膜とし、第2の非晶質膜を主
磁性膜とした複合非晶質膜を用いた磁気ヘッドにおいて
、第1の非晶質膜の結晶化温度T_x_1が第2の非晶
質膜の結晶化温度T_x_2よりも大きいことを特徴と
する積層非晶質磁性膜を用いた磁気ヘッド。
[Claims] 1. In a composite amorphous film in which the first amorphous film is the base film and the second amorphous film is the main magnetic film, crystallization of the first amorphous film The temperature T_x_1 is the crystallization temperature T of the second amorphous film
A laminated amorphous magnetic film characterized in that the film is larger than _x_2. 2. The laminated amorphous magnetic film according to claim 1, wherein the second amorphous film is a film containing Co as a main component. 3. The main components of the first amorphous film and the second amorphous film are
3. The laminated amorphous magnetic film according to claim 1, wherein the laminated amorphous magnetic film is composed of the same element. 4. The laminated amorphous magnetic film according to any one of claims 1 to 3, wherein the first amorphous film has a thickness of 30 Å or more and 500 Å or less. 5. The laminated amorphous magnetic film according to any one of claims 1 to 4, wherein the first amorphous film has a crystallization temperature of 550° C. or higher. 6. In a magnetic head using a composite amorphous film in which the first amorphous film is the base film and the second amorphous film is the main magnetic film, the crystallization temperature of the first amorphous film A magnetic head using a laminated amorphous magnetic film, characterized in that T_x_1 is higher than the crystallization temperature T_x_2 of the second amorphous film.
JP802287A 1987-01-19 1987-01-19 Laminated amorphous magnetic film and magnetic head using the same Pending JPS63177404A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP802287A JPS63177404A (en) 1987-01-19 1987-01-19 Laminated amorphous magnetic film and magnetic head using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP802287A JPS63177404A (en) 1987-01-19 1987-01-19 Laminated amorphous magnetic film and magnetic head using the same

Publications (1)

Publication Number Publication Date
JPS63177404A true JPS63177404A (en) 1988-07-21

Family

ID=11681709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP802287A Pending JPS63177404A (en) 1987-01-19 1987-01-19 Laminated amorphous magnetic film and magnetic head using the same

Country Status (1)

Country Link
JP (1) JPS63177404A (en)

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